EP2342738A4 - Emploi de melanges tensioactif/agent antimousse pour ameliorer la charge metallique et la passivation de surface de substrats de silicium - Google Patents

Emploi de melanges tensioactif/agent antimousse pour ameliorer la charge metallique et la passivation de surface de substrats de silicium

Info

Publication number
EP2342738A4
EP2342738A4 EP09818502.8A EP09818502A EP2342738A4 EP 2342738 A4 EP2342738 A4 EP 2342738A4 EP 09818502 A EP09818502 A EP 09818502A EP 2342738 A4 EP2342738 A4 EP 2342738A4
Authority
EP
European Patent Office
Prior art keywords
surfactant
silicon substrates
surface passivation
metals loading
enhanced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09818502.8A
Other languages
German (de)
English (en)
Other versions
EP2342738A2 (fr
Inventor
Michael B Korzenski
Ping Jiang
Charles Beall
Mick Bjelopavlic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of EP2342738A2 publication Critical patent/EP2342738A2/fr
Publication of EP2342738A4 publication Critical patent/EP2342738A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/008—Polymeric surface-active agents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/72—Ethers of polyoxyalkylene glycols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/78—Neutral esters of acids of phosphorus
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0026—Low foaming or foam regulating compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2068—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3707—Polyethers, e.g. polyalkyleneoxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
EP09818502.8A 2008-10-02 2009-10-01 Emploi de melanges tensioactif/agent antimousse pour ameliorer la charge metallique et la passivation de surface de substrats de silicium Withdrawn EP2342738A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10235208P 2008-10-02 2008-10-02
US14498609P 2009-01-15 2009-01-15
PCT/US2009/059199 WO2010039936A2 (fr) 2008-10-02 2009-10-01 Emploi de mélanges tensioactif/agent antimousse pour améliorer la charge métallique et la passivation de surface de substrats de silicium

Publications (2)

Publication Number Publication Date
EP2342738A2 EP2342738A2 (fr) 2011-07-13
EP2342738A4 true EP2342738A4 (fr) 2013-04-17

Family

ID=42074210

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09818502.8A Withdrawn EP2342738A4 (fr) 2008-10-02 2009-10-01 Emploi de melanges tensioactif/agent antimousse pour ameliorer la charge metallique et la passivation de surface de substrats de silicium

Country Status (6)

Country Link
EP (1) EP2342738A4 (fr)
JP (1) JP2012504871A (fr)
KR (1) KR20110063845A (fr)
CN (1) CN102217042A (fr)
TW (1) TWI485110B (fr)
WO (1) WO2010039936A2 (fr)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164190B2 (en) 2009-06-25 2012-04-24 International Business Machines Corporation Structure of power grid for semiconductor devices and method of making the same
US20120091100A1 (en) 2010-10-14 2012-04-19 S.O.I.Tec Silicon On Insulator Technologies Etchant for controlled etching of ge and ge-rich silicon germanium alloys
CN102533124A (zh) * 2010-12-31 2012-07-04 上海硅酸盐研究所中试基地 碳化硅衬底用抛光液
DE102011000322A1 (de) 2011-01-25 2012-07-26 saperatec GmbH Trennmedium, Verfahren und Anlage zum Trennen von Mehrschichtsystemen
EP2514799A1 (fr) * 2011-04-21 2012-10-24 Rohm and Haas Electronic Materials LLC Composition de texturation polycristalline améliorée et procédé
JP2014524673A (ja) * 2011-08-22 2014-09-22 １３６６ テクノロジーズ インク． シリコンウェーハを酸性ウェット化学エッチングする配合
JP5913869B2 (ja) * 2011-08-31 2016-04-27 林純薬工業株式会社 エッチング液組成物およびエッチング方法
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
JP2015512971A (ja) 2012-02-15 2015-04-30 インテグリス，インコーポレイテッド 組成物を使用したｃｍｐ後除去及び使用方法
JP5548224B2 (ja) * 2012-03-16 2014-07-16 富士フイルム株式会社 半導体基板製品の製造方法及びエッチング液
JP6325528B2 (ja) * 2012-05-10 2018-05-16 コーニング インコーポレイテッド ガラスエッチング媒体及び方法
TW201406932A (zh) 2012-05-18 2014-02-16 Advanced Tech Materials 用於自包含氮化鈦之表面脫除光阻劑之組成物及方法
US9487885B2 (en) 2012-06-14 2016-11-08 Tivra Corporation Substrate structures and methods
US9879357B2 (en) 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
JP2014057039A (ja) * 2012-08-10 2014-03-27 Fujifilm Corp 半導体基板製品の製造方法及びエッチング液
US8821215B2 (en) * 2012-09-07 2014-09-02 Cabot Microelectronics Corporation Polypyrrolidone polishing composition and method
WO2014089196A1 (fr) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions pour nettoyer des matériaux semiconducteurs iii-v et procédés pour les utiliser
KR102294726B1 (ko) 2013-03-04 2021-08-30 엔테그리스, 아이엔씨. 티타늄 나이트라이드를 선택적으로 에칭하기 위한 조성물 및 방법
WO2014148474A1 (fr) * 2013-03-21 2014-09-25 Dic株式会社 Agent antimousse, composition de tensioactif, composition de revêtement, et composition de réserve
WO2014178426A1 (fr) * 2013-05-02 2014-11-06 富士フイルム株式会社 Procédé de gravure, liquide de gravure et kit à liquide de gravure à utiliser dans ledit procédé, et procédé de fabrication d'un produit substrat en semiconducteur
JP6198672B2 (ja) * 2013-05-02 2017-09-20 富士フイルム株式会社 エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法
KR101812085B1 (ko) * 2013-05-02 2017-12-27 후지필름 가부시키가이샤 에칭액 및 에칭액의 키트, 이를 이용한 에칭 방법 및 반도체 기판 제품의 제조 방법
WO2014178423A1 (fr) * 2013-05-02 2014-11-06 富士フイルム株式会社 Procédé de gravure, solution de gravure utilisée dans ce dernier et procédé de production pour produit de substrat en semi-conducteur
CN111394100A (zh) * 2013-06-06 2020-07-10 恩特格里斯公司 用于选择性蚀刻氮化钛的组合物和方法
KR102338526B1 (ko) 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
US9633831B2 (en) * 2013-08-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same
EP2843723B1 (fr) * 2013-08-29 2018-01-31 Sumitomo Chemical Company Limited Procédé de fabrication d'un dispositif à film mince ferroélectrique à base de niobate
JP6366952B2 (ja) 2013-08-29 2018-08-01 住友化学株式会社 ニオブ酸系強誘電体薄膜素子の製造方法
EP3039098B1 (fr) 2013-08-30 2020-09-30 Entegris, Inc. Compositions et procédés pour effectuer la gravure sélective du nitrure de titane
US9416297B2 (en) 2013-11-13 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing method using slurry composition containing N-oxide compound
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
US20160322232A1 (en) 2013-12-20 2016-11-03 Entegris, Inc. Use of non-oxidizing strong acids for the removal of ion-implanted resist
KR102290209B1 (ko) 2013-12-31 2021-08-20 엔테그리스, 아이엔씨. 규소 및 게르마늄을 선택적으로 에칭하기 위한 배합물
EP3099839A4 (fr) 2014-01-29 2017-10-11 Entegris, Inc. Formulations de post-polissage chimico-mécanique et méthode d'utilisation associée
WO2015119925A1 (fr) * 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Compositions post-cmp sans amine et leur méthode d'utilisation
TWI558850B (zh) * 2014-03-29 2016-11-21 精密聚合物股份有限公司 電子零件用處理液及電子零件之製造方法
US9567493B2 (en) * 2014-04-25 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. CMP slurry solution for hardened fluid material
KR102388074B1 (ko) * 2014-11-13 2022-04-19 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체소자를 세정하기 위한 알칼리토류 금속을 포함하는 세정액, 및 이것을 이용한 반도체 소자의 세정방법
CN104498951B (zh) * 2014-12-11 2017-05-17 深圳新宙邦科技股份有限公司 一种双氧水系铜钼合金膜用蚀刻液
US10301580B2 (en) * 2014-12-30 2019-05-28 Versum Materials Us, Llc Stripping compositions having high WN/W etching selectivity
JP6501218B2 (ja) * 2015-03-18 2019-04-17 株式会社Adeka エッチング液組成物及びエッチング方法
JP6556935B2 (ja) * 2015-07-09 2019-08-07 インテグリス・インコーポレーテッド ゲルマニウムに比べてシリコンゲルマニウムを選択的にエッチングする配合物
JP6761166B2 (ja) * 2015-07-23 2020-09-23 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液
KR101806882B1 (ko) * 2015-08-20 2018-01-10 주식회사 태크녹스 태양광 전지 패널 세정용 조성물 및 이를 이용한 자가 세정 태양광 전지 패널
JP2017216444A (ja) * 2016-05-31 2017-12-07 ナガセケムテックス株式会社 エッチング液
CN106222756A (zh) * 2016-09-30 2016-12-14 杭州飞鹿新能源科技有限公司 用于金刚线切割单晶硅片制绒的添加剂及其应用方法
KR102404226B1 (ko) * 2016-10-31 2022-06-02 주식회사 이엔에프테크놀로지 식각 조성물
CN109988509B (zh) * 2017-12-29 2021-07-09 浙江新创纳电子科技有限公司 一种钽酸锂还原片抛光液及其制备方法和用途
SG11202004420QA (en) 2018-01-25 2020-06-29 Merck Patent Gmbh Photoresist remover compositions
US11678433B2 (en) 2018-09-06 2023-06-13 D-Wave Systems Inc. Printed circuit board assembly for edge-coupling to an integrated circuit
US11873564B2 (en) * 2018-10-02 2024-01-16 Hutchinson Technology Incorporated Etch chemistry for metallic materials
CN113412324B (zh) 2018-12-03 2022-12-02 富士胶片电子材料美国有限公司 蚀刻组合物
SG11202107061TA (en) * 2019-01-11 2021-07-29 Versum Materials Us Llc Hafnium oxide corrosion inhibitor
US11647590B2 (en) 2019-06-18 2023-05-09 D-Wave Systems Inc. Systems and methods for etching of metals
WO2021005980A1 (fr) 2019-07-05 2021-01-14 富士フイルム株式会社 Composition, kit et procédé de traitement pour substrat
US12033996B2 (en) 2019-09-23 2024-07-09 1372934 B.C. Ltd. Systems and methods for assembling processor systems
CN113122147B (zh) * 2019-12-31 2024-03-12 安集微电子科技（上海）股份有限公司 一种化学机械抛光液及其使用方法
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CN113150752A (zh) * 2021-03-04 2021-07-23 山东祺龙海洋石油钢管股份有限公司 穿越用高效携砂剂
CN113448185B (zh) * 2021-07-22 2022-08-05 福建省佑达环保材料有限公司 一种硅基oled制程中使用的显影液组合物
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CN113690401B (zh) * 2021-10-26 2021-12-31 中南大学 一种有机磷酸锌-硅烷复合钝化膜改性锌金属负极及其制备方法与应用
CN114264623A (zh) * 2021-12-22 2022-04-01 河北新立中有色金属集团有限公司 铸造铝合金中痕量磷的测定方法
WO2024127794A1 (fr) * 2022-12-13 2024-06-20 株式会社ダイセル Agent de traitement de surface et procédé de fabrication de substrat de silicium gravé
CN116023945B (zh) * 2022-12-27 2024-06-07 浙江奥首材料科技有限公司 蚀刻液组合物、蚀刻液及其制备方法
CN115960609B (zh) * 2022-12-30 2023-10-24 浙江奥首材料科技有限公司 一种高选择性蚀刻晶圆表面氧化层的蚀刻液、其制备方法及用途

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040018453A1 (en) * 2002-04-12 2004-01-29 Shipley Company, L.L.C. Photoresist processing aid and method
EP1975987A2 (fr) * 2007-03-31 2008-10-01 Advanced Technology Materials, Inc. Procédés de décapage de matériau pour réclamation de tranche

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5803956A (en) * 1994-07-28 1998-09-08 Hashimoto Chemical Company, Ltd. Surface treating composition for micro processing
US6033996A (en) * 1997-11-13 2000-03-07 International Business Machines Corporation Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide
US6562726B1 (en) * 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
KR100390553B1 (ko) * 2000-12-30 2003-07-07 주식회사 동진쎄미켐 근적외선 분광기를 이용한 금속막 에칭 공정 제어방법 및에쳔트 조성물의 재생방법
WO2004019134A1 (fr) * 2002-08-22 2004-03-04 Daikin Industries, Ltd. Solution decapante
JP4241018B2 (ja) * 2002-12-06 2009-03-18 メック株式会社 エッチング液
JP4799843B2 (ja) * 2003-10-17 2011-10-26 三星電子株式会社 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法
CN1875142A (zh) * 2003-10-29 2006-12-06 宝洁公司 织物制品处理系统和方法
KR100675284B1 (ko) * 2005-02-01 2007-01-26 삼성전자주식회사 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법
US20090212021A1 (en) * 2005-06-13 2009-08-27 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
DE102005038358A1 (de) * 2005-08-11 2007-02-15 Basf Ag Verfahren zur Herstellung von Pigmentzubereitungen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040018453A1 (en) * 2002-04-12 2004-01-29 Shipley Company, L.L.C. Photoresist processing aid and method
EP1975987A2 (fr) * 2007-03-31 2008-10-01 Advanced Technology Materials, Inc. Procédés de décapage de matériau pour réclamation de tranche

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EP2342738A2 (fr) 2011-07-13
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JP2012504871A (ja) 2012-02-23
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