SG10201706361UA - Method For Preparing Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Thin Film Forming Apparatus - Google Patents

Method For Preparing Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Thin Film Forming Apparatus

Info

Publication number
SG10201706361UA
SG10201706361UA SG10201706361UA SG10201706361UA SG10201706361UA SG 10201706361U A SG10201706361U A SG 10201706361UA SG 10201706361U A SG10201706361U A SG 10201706361UA SG 10201706361U A SG10201706361U A SG 10201706361UA SG 10201706361U A SG10201706361U A SG 10201706361UA
Authority
SG
Singapore
Prior art keywords
phase shift
shift mask
halftone phase
mask blank
thin film
Prior art date
Application number
SG10201706361UA
Other languages
English (en)
Inventor
Yukio Inazuki
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201706361UA publication Critical patent/SG10201706361UA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
SG10201706361UA 2016-08-23 2017-08-03 Method For Preparing Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Thin Film Forming Apparatus SG10201706361UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016162620A JP6558326B2 (ja) 2016-08-23 2016-08-23 ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置

Publications (1)

Publication Number Publication Date
SG10201706361UA true SG10201706361UA (en) 2018-03-28

Family

ID=59523013

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201706361UA SG10201706361UA (en) 2016-08-23 2017-08-03 Method For Preparing Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Thin Film Forming Apparatus

Country Status (7)

Country Link
US (2) US10466582B2 (de)
EP (2) EP3627223B1 (de)
JP (1) JP6558326B2 (de)
KR (2) KR102239283B1 (de)
CN (1) CN107765508B (de)
SG (1) SG10201706361UA (de)
TW (2) TWI724226B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10678125B2 (en) * 2016-03-02 2020-06-09 Shin-Etsu Chemical Co., Ltd. Photomask blank and method for preparing photomask
JP6743679B2 (ja) 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
WO2018020913A1 (ja) * 2016-07-25 2018-02-01 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法及び半導体デバイスの製造方法
US11156912B2 (en) * 2017-09-29 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography mask and method for manufacturing the same
SG11202009172VA (en) * 2018-03-26 2020-10-29 Hoya Corp Mask blank, phase shift mask, and method for manufacturing semiconductor device
KR102582203B1 (ko) * 2018-09-14 2023-09-22 가부시키가이샤 니콘 위상 시프트 마스크 블랭크스, 위상 시프트 마스크, 노광 방법, 및 디바이스의 제조 방법
JP7135739B2 (ja) * 2018-11-01 2022-09-13 日本電信電話株式会社 スポットサイズ変換器の作製方法およびスポットサイズ変換器
JP7264083B2 (ja) * 2019-03-29 2023-04-25 信越化学工業株式会社 位相シフトマスクブランクス、その製造方法及び位相シフトマスク
JP7192731B2 (ja) * 2019-09-27 2022-12-20 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、その製造方法、及びハーフトーン位相シフト型フォトマスク

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674647A (en) 1992-11-21 1997-10-07 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
JP3064769B2 (ja) 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
JP2003253439A (ja) * 2002-03-01 2003-09-10 Ulvac Japan Ltd スパッタ装置
US6872496B2 (en) * 2002-10-31 2005-03-29 Taiwan Semiconductor Manufacturing Company AlSixOy as a new bi-layer high transmittance attenuating phase shifting mask material for 193 nanometer lithography
JP2004301993A (ja) * 2003-03-31 2004-10-28 Shin Etsu Chem Co Ltd 位相シフトマスクブランクの製造方法および位相シフトマスクの製造方法並びに位相シフトマスクブランクおよび位相シフトマスク
US7329474B2 (en) * 2003-03-31 2008-02-12 Shin-Estu Chemical Co., Ltd. Photomask blank, photomask, and method of manufacture
US7344806B2 (en) * 2003-03-31 2008-03-18 Shin-Etsu Chemical Co., Ltd. Method of producing phase shift mask blank, method of producing phase shift mask, phase shift mask blank, and phase shift mask
TWI348590B (en) * 2004-03-31 2011-09-11 Shinetsu Chemical Co Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
DE602006021102D1 (de) 2005-07-21 2011-05-19 Shinetsu Chemical Co Photomaskenrohling, Photomaske und deren Herstellungsverfahren
JP4933753B2 (ja) 2005-07-21 2012-05-16 信越化学工業株式会社 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
JP4551344B2 (ja) 2006-03-02 2010-09-29 信越化学工業株式会社 フォトマスクブランクおよびフォトマスク
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
US20080044740A1 (en) * 2006-08-21 2008-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask having haze reduction layer
JP5530075B2 (ja) * 2008-03-31 2014-06-25 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びこれらの製造方法
JP5879951B2 (ja) * 2011-11-21 2016-03-08 信越化学工業株式会社 光パターン照射方法、ハーフトーン位相シフトマスク及びハーフトーン位相シフトマスクブランク
IN2015DN01663A (de) * 2012-08-03 2015-07-03 Semiconductor Energy Lab
EP2922103B1 (de) * 2012-08-21 2017-04-05 Oji Holdings Corporation Substrat für lichtemittierende Halbleiterelemente und lichtemittierendes Halbleiterelement
KR20150058254A (ko) * 2012-09-28 2015-05-28 아사히 가라스 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법, 그리고 euv 리소그래피용 반사형 마스크 및 그 제조 방법
CN104736335B (zh) * 2012-10-19 2017-03-08 柯尼卡美能达株式会社 气体阻隔膜和气体阻隔膜的制造方法
US9625806B2 (en) * 2013-01-15 2017-04-18 Hoya Corporation Mask blank, phase-shift mask, and method for manufacturing the same
SG11201505421SA (en) * 2013-01-18 2015-08-28 Hoya Corp Method for manufacturing mask blank substrate, method for manufacturing mask blank and method for manufacturing transfer mask
JP6373607B2 (ja) * 2013-03-08 2018-08-15 Hoya株式会社 マスクブランクの製造方法および位相シフトマスクの製造方法
JP6264238B2 (ja) 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
JP6323295B2 (ja) * 2014-10-20 2018-05-16 信越化学工業株式会社 パターン形成方法及び化学増幅ネガ型レジスト組成物
JP6463992B2 (ja) 2015-03-03 2019-02-06 Piaa株式会社 車両用灯具

Also Published As

Publication number Publication date
US10466582B2 (en) 2019-11-05
TWI724226B (zh) 2021-04-11
KR20180022584A (ko) 2018-03-06
KR102329747B1 (ko) 2021-11-23
CN107765508A (zh) 2018-03-06
TW201821897A (zh) 2018-06-16
JP2018031840A (ja) 2018-03-01
KR20210041549A (ko) 2021-04-15
CN107765508B (zh) 2022-10-04
US20180059532A1 (en) 2018-03-01
TW202115485A (zh) 2021-04-16
US10809611B2 (en) 2020-10-20
US20200026180A1 (en) 2020-01-23
EP3287845B1 (de) 2019-12-18
EP3627223A1 (de) 2020-03-25
JP6558326B2 (ja) 2019-08-14
TWI746247B (zh) 2021-11-11
EP3287845A1 (de) 2018-02-28
EP3627223B1 (de) 2021-06-16
KR102239283B1 (ko) 2021-04-12

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