SG10201608504SA - Fabrication of seamless large area master templates for imprint lithography - Google Patents

Fabrication of seamless large area master templates for imprint lithography

Info

Publication number
SG10201608504SA
SG10201608504SA SG10201608504SA SG10201608504SA SG10201608504SA SG 10201608504S A SG10201608504S A SG 10201608504SA SG 10201608504S A SG10201608504S A SG 10201608504SA SG 10201608504S A SG10201608504S A SG 10201608504SA SG 10201608504S A SG10201608504S A SG 10201608504SA
Authority
SG
Singapore
Prior art keywords
fabrication
large area
imprint lithography
area master
master templates
Prior art date
Application number
SG10201608504SA
Other languages
English (en)
Inventor
Douglas J Resnick
Michael N Miller
Frank Y Xu
Original Assignee
Canon Nanotechnologies Inc
Molecular Imprints Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Nanotechnologies Inc, Molecular Imprints Inc filed Critical Canon Nanotechnologies Inc
Publication of SG10201608504SA publication Critical patent/SG10201608504SA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • B29C33/424—Moulding surfaces provided with means for marking or patterning
    • B29C2033/426—Stampers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B29C2043/023—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
    • B29C2043/025—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B29C2059/023—Microembossing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/003—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor characterised by the choice of material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
    • B29D11/00769—Producing diffraction gratings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2011/00—Optical elements, e.g. lenses, prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/887—Nanoimprint lithography, i.e. nanostamp
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Ophthalmology & Optometry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
SG10201608504SA 2011-12-19 2012-12-19 Fabrication of seamless large area master templates for imprint lithography SG10201608504SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161577135P 2011-12-19 2011-12-19

Publications (1)

Publication Number Publication Date
SG10201608504SA true SG10201608504SA (en) 2016-12-29

Family

ID=48609072

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201608504SA SG10201608504SA (en) 2011-12-19 2012-12-19 Fabrication of seamless large area master templates for imprint lithography
SG11201403060WA SG11201403060WA (en) 2011-12-19 2012-12-19 Fabrication of seamless large area master templates for imprint lithography

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201403060WA SG11201403060WA (en) 2011-12-19 2012-12-19 Fabrication of seamless large area master templates for imprint lithography

Country Status (7)

Country Link
US (1) US9452574B2 (fr)
JP (1) JP6324318B2 (fr)
KR (2) KR102044771B1 (fr)
CN (2) CN104221127B (fr)
SG (2) SG10201608504SA (fr)
TW (1) TWI570771B (fr)
WO (1) WO2013096459A1 (fr)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015060939A1 (fr) * 2013-10-24 2015-04-30 Moxtek, Inc. Polariseur en grille métallique avec zone latérale
US9354374B2 (en) 2013-10-24 2016-05-31 Moxtek, Inc. Polarizer with wire pair over rib
CN103576221B (zh) * 2013-10-25 2015-11-18 中国科学院半导体研究所 一种提高光栅结构均匀度的电子束曝光方法
KR102214830B1 (ko) 2014-05-02 2021-02-10 삼성전자주식회사 마스터 몰드 제조 방법
KR102219703B1 (ko) 2014-05-07 2021-02-24 삼성전자주식회사 임프린트를 이용한 패터닝 방법, 이를 이용하여 제작된 패턴 구조체 및 임프린팅 시스템
KR102176591B1 (ko) 2014-05-07 2020-11-09 삼성전자주식회사 와이어 그리드 편광자, 이를 포함한 액정 표시 장치 및 와이어 그리드 편광자 제조 방법
KR102336499B1 (ko) * 2014-08-04 2021-12-07 삼성전자주식회사 패턴 구조체 및 그 제조방법과, 금속 와이어 그리드 편광판을 채용한 액정 표시장치
KR102306655B1 (ko) 2015-04-10 2021-09-29 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
KR102332038B1 (ko) 2015-04-10 2021-11-30 삼성디스플레이 주식회사 임프린트 리소그래피 방법, 이를 이용한 임프린트 리소그래피용 마스터 템플릿의 제조 방법 및 이에 의해 제조된 임프린트 리소그래피용 마스터 템플릿
US9989845B2 (en) 2015-04-16 2018-06-05 Samsung Display Co., Ltd. Imprint lithography method, method for manufacturing master template using the method and master template manufactured by the method
KR102446872B1 (ko) 2015-04-24 2022-09-26 삼성디스플레이 주식회사 표시 패널
KR20170091439A (ko) * 2016-02-01 2017-08-09 삼성전자주식회사 패턴 구조체 및 그 제조 방법
JP6882316B2 (ja) 2016-03-04 2021-06-02 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ワイヤグリッド偏光板製造方法
CN108780739B (zh) * 2016-03-11 2023-09-15 因普里亚公司 预图案化光刻模板、基于使用该模板的辐射图案化的工艺及形成该模板的工艺
CN105789118B (zh) * 2016-04-14 2019-03-22 京东方科技集团股份有限公司 一种显示基板及其制作方法
KR102526936B1 (ko) 2016-04-26 2023-04-28 삼성디스플레이 주식회사 표시 패널 및 표시 패널용 모기판
KR102535820B1 (ko) 2016-05-19 2023-05-24 삼성디스플레이 주식회사 임프린트 리소그래피 방법, 임프린트용 마스터 템플릿, 이를 이용하여 제조된 와이어 그리드 편광소자 및 이를 포함하는 표시 기판
KR102607657B1 (ko) 2016-06-07 2023-11-28 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 미세패턴 형성 방법
KR20180023102A (ko) 2016-08-23 2018-03-07 삼성디스플레이 주식회사 와이어 그리드 패턴 및 이의 제조방법
KR20180034776A (ko) 2016-09-27 2018-04-05 삼성디스플레이 주식회사 임프린트 마스터 템플릿의 제조 방법
KR20180039228A (ko) * 2016-10-07 2018-04-18 삼성디스플레이 주식회사 표시 장치의 제조 방법
KR20180044744A (ko) 2016-10-24 2018-05-03 삼성전자주식회사 패턴 구조체 및 그 제조방법
KR20200003295A (ko) * 2017-05-16 2020-01-08 어플라이드 머티어리얼스, 인코포레이티드 주파수 배가 간섭 리소그래피를 이용하는 와이어 그리드 편광자 제조 방법들
TWI646389B (zh) * 2017-09-12 2019-01-01 友達光電股份有限公司 壓印模具以及壓印模具製造方法
US10948818B2 (en) * 2018-03-19 2021-03-16 Applied Materials, Inc. Methods and apparatus for creating a large area imprint without a seam
US10705269B2 (en) * 2018-03-30 2020-07-07 Northrop Grumman Systems Corporation Fabrication method of a diffractive optic for hybrid coherent and spectral beam combination
KR102666843B1 (ko) * 2018-08-31 2024-05-21 삼성디스플레이 주식회사 나노 임프린트용 스탬프 및 이의 제조 방법
CN113169045A (zh) * 2018-10-16 2021-07-23 Ｓｃｉｖａｘ株式会社 微细图案成形方法、压印用模具制造方法及压印用模具、以及光学设备
KR20210116685A (ko) * 2019-02-11 2021-09-27 어플라이드 머티어리얼스, 인코포레이티드 대면적 심리스 마스터 및 임프린트 스탬프 제조 방법
CN110824835B (zh) * 2019-11-26 2023-05-12 京东方科技集团股份有限公司 拼接式纳米压印模板、其拼接缝的修复方法及其制作方法
CN111522206B (zh) 2020-04-29 2021-09-21 中国科学院光电技术研究所 一种基于反射式光场增强的微纳光印制造方法
KR20230043825A (ko) 2020-07-31 2023-03-31 모포토닉스 홀딩 비.브이. 업스케일링된 마스터를 생성하기 위한 용접 방법
CN115480442A (zh) * 2021-05-31 2022-12-16 联华电子股份有限公司 图案拆解方法

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5437946A (en) 1994-03-03 1995-08-01 Nikon Precision Inc. Multiple reticle stitching for scanning exposure system
JPH09251954A (ja) * 1996-01-10 1997-09-22 Nikon Corp 半導体装置、レチクル、および投影露光方法
KR100283408B1 (ko) * 1998-01-21 2001-04-02 김영환 반도체용마스크
AU4167199A (en) * 1998-06-17 2000-01-05 Nikon Corporation Method for producing mask
US6225013B1 (en) 1999-05-20 2001-05-01 Tower Semiconductor Ltd. Stitching design rules for forming interconnect layers
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US6387787B1 (en) 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
JP3985165B2 (ja) * 2001-08-20 2007-10-03 日産化学工業株式会社 リソグラフィー用反射防止膜形成組成物
US6849558B2 (en) * 2002-05-22 2005-02-01 The Board Of Trustees Of The Leland Stanford Junior University Replication and transfer of microstructures and nanostructures
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6936194B2 (en) 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
US20040121246A1 (en) * 2002-09-20 2004-06-24 Brown David R. Lithography process to reduce seam lines in an array of microelements produced from a sub-mask and a sub-mask for use thereof
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US20040065252A1 (en) 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7003758B2 (en) * 2003-10-07 2006-02-21 Brion Technologies, Inc. System and method for lithography simulation
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
KR20060080010A (ko) 2005-01-04 2006-07-07 매그나칩 반도체 유한회사 임프린트 리소그래피를 이용한 미세패턴 형성방법
JP2006210856A (ja) * 2005-01-31 2006-08-10 Toshiba Corp 露光方法及び半導体装置の製造方法
US7718326B2 (en) 2005-06-17 2010-05-18 Vincent E Stenger Seamless stitching of patterns formed by interference lithography
CN101272982B (zh) * 2005-09-30 2012-03-21 高通Mems科技公司 Mems装置及其互连
JP2007171451A (ja) * 2005-12-21 2007-07-05 Matsushita Electric Ind Co Ltd 露光方法およびプラズマディスプレイパネル
JP2007193243A (ja) * 2006-01-23 2007-08-02 Sony Corp 露光用マスク、露光方法、露光用マスクの製造方法、３次元デバイスおよび３次元デバイスの製造方法
JP2008107720A (ja) * 2006-10-27 2008-05-08 Enplas Corp 偏光子およびその製造方法
KR101270200B1 (ko) * 2006-10-30 2013-05-31 삼성디스플레이 주식회사 와이어 그리드 편광 패턴의 제조 방법 및 이에 의해 제조된액정 표시 장치
KR100863570B1 (ko) * 2006-12-19 2008-10-15 삼성전자주식회사 와이어 그리드 편광자의 제조방법
KR101563874B1 (ko) 2007-02-07 2015-10-29 주식회사 에스앤에스텍 블랭크 스탬프 및 나노 임프린트 리소그래피용 스탬프
JP4996488B2 (ja) * 2007-03-08 2012-08-08 東芝機械株式会社 微細パターン形成方法
KR20080105524A (ko) * 2007-05-31 2008-12-04 삼성전자주식회사 마스크 몰드 및 그 제작방법과 제작된 마스크 몰드를이용한 대면적 미세패턴 성형방법
JP5473266B2 (ja) 2007-08-03 2014-04-16 キヤノン株式会社 インプリント方法および基板の加工方法、基板の加工方法による半導体デバイスの製造方法
US7785946B2 (en) * 2007-09-25 2010-08-31 Infineon Technologies Ag Integrated circuits and methods of design and manufacture thereof
US7985941B2 (en) * 2007-11-16 2011-07-26 3M Innovative Properties Company Seamless laser ablated roll tooling
US8518633B2 (en) * 2008-01-22 2013-08-27 Rolith Inc. Large area nanopatterning method and apparatus
TWI417181B (zh) * 2008-01-25 2013-12-01 Asahi Kasei E Materials Corp The manufacturing method of seamless mold
JP2009210856A (ja) * 2008-03-05 2009-09-17 Fujitsu Ltd ホログラム記録装置
JP4799575B2 (ja) * 2008-03-06 2011-10-26 株式会社東芝 インプリント方法
JP5258635B2 (ja) 2008-03-18 2013-08-07 キヤノン株式会社 ナノインプリント方法、ナノインプリントに用いられるモールド及び構造体の製造方法
US20090246706A1 (en) * 2008-04-01 2009-10-01 Applied Materials, Inc. Patterning resolution enhancement combining interference lithography and self-aligned double patterning techniques
US8192920B2 (en) * 2008-04-26 2012-06-05 Rolith Inc. Lithography method
JP5370958B2 (ja) * 2008-09-25 2013-12-18 国立大学法人東京工業大学 ナノインプリント用モールド
CN102301463B (zh) * 2008-12-05 2015-12-02 流体科技公司 产生有图案的材料的方法
JP4825891B2 (ja) 2009-03-31 2011-11-30 株式会社東芝 半導体装置の製造方法およびテンプレート
JP5377053B2 (ja) * 2009-04-17 2013-12-25 株式会社東芝 テンプレート及びその製造方法、並びにパターン形成方法
JP5257225B2 (ja) * 2009-04-28 2013-08-07 大日本印刷株式会社 ナノインプリント用モールドおよびその製造方法
NL2005975A (en) * 2010-03-03 2011-09-06 Asml Netherlands Bv Imprint lithography.
JP5619458B2 (ja) * 2010-03-31 2014-11-05 Hoya株式会社 レジストパターンの形成方法及びモールドの製造方法
CA2807639A1 (fr) * 2010-08-23 2012-03-01 Rolith, Inc. Masque pour lithographie de champ proche et sa fabrication

Also Published As

Publication number Publication date
JP2015502668A (ja) 2015-01-22
US9452574B2 (en) 2016-09-27
KR102044771B1 (ko) 2019-11-14
KR102149669B1 (ko) 2020-09-01
JP6324318B2 (ja) 2018-05-16
CN107015433A (zh) 2017-08-04
CN104221127A (zh) 2014-12-17
SG11201403060WA (en) 2014-09-26
WO2013096459A1 (fr) 2013-06-27
KR20140117425A (ko) 2014-10-07
CN107015433B (zh) 2021-06-04
CN104221127B (zh) 2017-04-12
TWI570771B (zh) 2017-02-11
TW201335970A (zh) 2013-09-01
US20130153534A1 (en) 2013-06-20
KR20190132695A (ko) 2019-11-28

Similar Documents

Publication Publication Date Title
SG10201608504SA (en) Fabrication of seamless large area master templates for imprint lithography
SG11201405089WA (en) Large area imprint lithography
EP2783389A4 (fr) Couches de maintien pour la lithographie par ultraviolets extrêmes
IL236397A0 (en) Defining dimensions for the lithography process
GB2511456B (en) Dual hard mask lithography process
EP2926364A4 (fr) Distribution de densité de métal pour une lithographie à double motif
EP2705526A4 (fr) Calcul et compensation du rayonnement parasite en lithographie euv
EP2774175A4 (fr) Optimisation d'un modèle basé sur une variation de processus pour la métrologie
EP2461350A4 (fr) Composition permettant de former une couche primaire de résist pour lithographie par nano-impression
EP2609467A4 (fr) Masque pour lithographie de champ proche et sa fabrication
GB2498674B (en) Photoresist composition for negative development and pattern forming method using thereof
EP2916170A4 (fr) Composition contenant un groupe ester destinée à former un film de sous-couche de réserve contenant du silicium
SG2013069372A (en) Nanoimprinting master template and method for making
EP2902214A4 (fr) Plaque lithographique présensibilisée et procédé de fabrication de plaque d'impression lithographique
EP2765457A4 (fr) Composition pour former un film de sous-couche de réserve pour euv contenant du silicium
EP2693270A4 (fr) Procédé de fabrication d'une plaque d'impression lithographique
HK1179244A1 (en) New processes for producing benzophenone derivatives
PL3489374T3 (pl) Zwierciadła do litografii euv
EP2680074A4 (fr) Procédé de fabrication d'une plaque d'impression lithographique
EP2762974A4 (fr) Procédé de fabrication d'une plaque d'impression lithographique
SG11201603475RA (en) Low contact imprint lithography template chuck system for improved overlay correction
IL229689A0 (en) Test method for lithography
EP2762312A4 (fr) Procédé pour produire une plaque d'impression lithographique
EP2738603A4 (fr) Pellicule pour lithographie, masque photographique équipé de la pellicule et procédé d'exposition
PL2659307T3 (pl) Sposób wytwarzania przedmiotów o dużej precyzji za pomocą wysokorozdzielczej litografii i osadzania suchego i otrzymane w ten sposób przedmioty