PL3489374T3 - Zwierciadła do litografii euv - Google Patents

Zwierciadła do litografii euv

Info

Publication number
PL3489374T3
PL3489374T3 PL18207117.5T PL18207117T PL3489374T3 PL 3489374 T3 PL3489374 T3 PL 3489374T3 PL 18207117 T PL18207117 T PL 18207117T PL 3489374 T3 PL3489374 T3 PL 3489374T3
Authority
PL
Poland
Prior art keywords
mirrors
euv lithography
euv
lithography
Prior art date
Application number
PL18207117.5T
Other languages
English (en)
Inventor
Claudia Ekstein
Holger Maltor
Original Assignee
Carl Zeiss Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Gmbh filed Critical Carl Zeiss Smt Gmbh
Publication of PL3489374T3 publication Critical patent/PL3489374T3/pl

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/12—Alloys based on aluminium with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0084—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ carbon or graphite as the main non-metallic constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Sampling And Sample Adjustment (AREA)
PL18207117.5T 2011-01-21 2012-01-14 Zwierciadła do litografii euv PL3489374T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161434869P 2011-01-21 2011-01-21
DE201110002953 DE102011002953A1 (de) 2011-01-21 2011-01-21 Substrat für Spiegel für die EUV-Lithographie

Publications (1)

Publication Number Publication Date
PL3489374T3 true PL3489374T3 (pl) 2023-01-30

Family

ID=46510655

Family Applications (1)

Application Number Title Priority Date Filing Date
PL18207117.5T PL3489374T3 (pl) 2011-01-21 2012-01-14 Zwierciadła do litografii euv

Country Status (9)

Country Link
US (3) US20130301151A1 (pl)
EP (2) EP2665839B1 (pl)
JP (1) JP6023083B2 (pl)
KR (1) KR102080180B1 (pl)
CN (3) CN103328664B (pl)
DE (1) DE102011002953A1 (pl)
ES (1) ES2933686T3 (pl)
PL (1) PL3489374T3 (pl)
WO (1) WO2012098062A2 (pl)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009040785A1 (de) * 2009-09-09 2011-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung
DE102011002953A1 (de) * 2011-01-21 2012-07-26 Carl Zeiss Smt Gmbh Substrat für Spiegel für die EUV-Lithographie
DE102013107192A1 (de) * 2013-07-08 2015-01-08 Carl Zeiss Laser Optics Gmbh Reflektives optisches Element für streifenden Einfall im EUV-Wellenlängenbereich
DE102013215541A1 (de) * 2013-08-07 2015-02-12 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
CN108778540B (zh) * 2016-03-16 2020-10-20 东洋铝株式会社 紫外线反射材用铝箔及其制造方法
DE102016209359A1 (de) * 2016-05-31 2017-11-30 Carl Zeiss Smt Gmbh EUV-Kollektor
WO2019215243A1 (de) 2018-05-09 2019-11-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Spiegelträger für einen optischen spiegel aus einem verbundwerkstoff und verfahren zu dessen herstellung
CN112662918A (zh) * 2020-12-02 2021-04-16 国网电力科学研究院武汉南瑞有限责任公司 Al2O3-TiC颗粒增强铝基复合材料及其制备方法

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1877141A (en) * 1930-04-07 1932-09-13 Alfred J Lyon Aluminum casting alloy
US4093349A (en) * 1976-10-27 1978-06-06 Northrop Corporation High reflectivity laser mirrors
DE3107612A1 (de) * 1981-02-27 1982-09-16 Siemens AG, 1000 Berlin und 8000 München Laserspiegel, insbesondere laser-polygonspiegel
JPS61266535A (ja) * 1985-05-21 1986-11-26 Nissan Motor Co Ltd 銅基複合材料
US4643543A (en) * 1986-01-27 1987-02-17 Atlantic Richfield Company Mirror optic article
JPS62180301A (ja) * 1986-02-04 1987-08-07 Toshiba Corp 反射鏡
US4659548A (en) * 1986-02-13 1987-04-21 The United States Of America As Represented By The Secretary Of The Navy Fabrication of metal matrix composite mirror
US4755221A (en) * 1986-03-24 1988-07-05 Gte Products Corporation Aluminum based composite powders and process for producing same
US4803334A (en) * 1987-11-16 1989-02-07 Westinghouse Electric Corp. Method for laser beam welding metal matrix composite components
JPH0715523B2 (ja) * 1988-05-31 1995-02-22 住友電気工業株式会社 レーザ用非球面鏡
ES2028537A6 (es) * 1990-09-17 1992-07-01 Martin Gutierrez Antonio Procedimiento para la decoracion de espejos circulares.
JPH06279897A (ja) * 1992-02-06 1994-10-04 Chuetsu Gokin Chuko Kk 高軟化特性析出硬化型銅合金
JP2684927B2 (ja) * 1992-06-16 1997-12-03 日本鋼管株式会社 光学素子基板
DE69520268T2 (de) * 1995-02-01 2001-08-09 Brush Wellman Behandlung von Legierungen und danach hergestellte Gegenstände
US5699188A (en) * 1995-06-26 1997-12-16 Minnesota Mining And Manufacturing Co. Metal-coated multilayer mirror
DE59707198D1 (de) * 1996-08-15 2002-06-13 Alcan Tech & Man Ag Reflektor mit resistenter Oberfläche
US6183877B1 (en) * 1997-03-21 2001-02-06 Inco Limited Cast-alumina metal matrix composites
JPH11311704A (ja) * 1998-02-26 1999-11-09 Nikon Corp 紫外光用ミラー
US6377655B1 (en) * 1998-05-08 2002-04-23 Nikon Corporation Reflective mirror for soft x-ray exposure apparatus
JPH11326598A (ja) * 1998-05-08 1999-11-26 Nikon Corp 反射鏡およびその製造方法
JP3316191B2 (ja) * 1998-12-24 2002-08-19 日本碍子株式会社 鏡面性に優れたベリリウム−銅−亜鉛合金
JP4410367B2 (ja) * 1999-12-24 2010-02-03 キヤノン電子株式会社 金属鏡および金属回転多面鏡およびその製造方法
US6587263B1 (en) * 2000-03-31 2003-07-01 Lockheed Martin Corporation Optical solar reflectors
EP1154289A1 (de) * 2000-05-09 2001-11-14 Alcan Technology & Management AG Reflektor
DE10127086A1 (de) * 2001-06-02 2002-12-05 Zeiss Carl Vorrichtung zur Reflexion von elektromagnetischen Wellen
DE10134267B4 (de) * 2001-07-18 2007-03-01 Gkss-Forschungszentrum Geesthacht Gmbh Einrichtung zur Reflexion von Röntgenstrahlen
US6634760B2 (en) * 2001-08-27 2003-10-21 The Regents Of The University Of California Low-cost method for producing extreme ultraviolet lithography optics
US6921177B2 (en) * 2003-02-24 2005-07-26 Raytheon Company High precision mirror, and a method of making it
JP2005259949A (ja) * 2004-03-11 2005-09-22 Nikon Corp ミラー及び照明光学装置
JP2005268359A (ja) * 2004-03-17 2005-09-29 Nikon Corp ミラー及び照明光学装置
CN1253731C (zh) * 2004-05-20 2006-04-26 中国科学院上海技术物理研究所 大口径轻质复合材料反射镜及制备方法
JP4210239B2 (ja) * 2004-06-01 2009-01-14 日鉱金属株式会社 強度、導電性及び曲げ加工性に優れるチタン銅及びその製造方法
DE102004062289B4 (de) * 2004-12-23 2007-07-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Thermisch stabiler Multilayer-Spiegel für den EUV-Spektralbereich
JP2006190862A (ja) * 2005-01-07 2006-07-20 Taiheiyo Cement Corp 露光用反射鏡
WO2006103885A1 (ja) * 2005-03-29 2006-10-05 Kabushiki Kaisha Kobe Seiko Sho 耐熱性、加工性、及び剛性に優れたＡｌ基合金
DE102005026418B4 (de) 2005-06-08 2008-05-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Spiegelträger für einen optischen Spiegel
CN1719287A (zh) * 2005-06-29 2006-01-11 中国人民解放军国防科学技术大学 三明治式结构SiC基复合材料轻质反射镜及其制备方法
WO2007030701A2 (en) * 2005-09-07 2007-03-15 M Cubed Technologies, Inc. Metal matrix composite bodies, and methods for making same
US7612285B2 (en) * 2007-01-08 2009-11-03 Edtek, Inc. Conversion of solar energy to electrical and/or heat energy
WO2008134516A2 (en) * 2007-04-27 2008-11-06 Honeywell International Inc. Novel manufacturing design and processing methods and apparatus for sputtering targets
US20090148334A1 (en) * 2007-12-05 2009-06-11 United States of America as represented by the Administrator of the National Aeronautics and Nanophase dispersion strengthened low cte alloy
DE102009000099A1 (de) * 2009-01-09 2010-07-22 Carl Zeiss Smt Ag Mikrospiegelarray mit Doppelbiegebalken Anordnung und elektronischer Aktorik
US8057203B2 (en) * 2008-10-02 2011-11-15 Gap Engineering LLC Pyrospherelator
DE102009039400A1 (de) * 2009-08-31 2011-03-03 Carl Zeiss Laser Optics Gmbh Reflektives optisches Element zur Verwendung in einem EUV-System
DE102009040785A1 (de) * 2009-09-09 2011-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung
US8810775B2 (en) * 2010-04-16 2014-08-19 Media Lario S.R.L. EUV mirror module with a nickel electroformed curved mirror
DE102011079933A1 (de) * 2010-08-19 2012-02-23 Carl Zeiss Smt Gmbh Optisches Element für die UV- oder EUV-Lithographie
DE102010039927A1 (de) * 2010-08-30 2012-03-01 Carl Zeiss Smt Gmbh Substrat für Spiegel für die EUV-Lithographie
DE102011002953A1 (de) * 2011-01-21 2012-07-26 Carl Zeiss Smt Gmbh Substrat für Spiegel für die EUV-Lithographie
DE102016217735A1 (de) * 2016-09-16 2018-03-22 Carl Zeiss Smt Gmbh Komponente für eine Spiegelanordnung für die EUV-Lithographie

Also Published As

Publication number Publication date
EP2665839B1 (en) 2018-12-26
ES2933686T3 (es) 2023-02-13
CN103328664A (zh) 2013-09-25
CN110376670A (zh) 2019-10-25
CN105353433A (zh) 2016-02-24
US20170160447A1 (en) 2017-06-08
WO2012098062A3 (en) 2012-10-18
CN103328664B (zh) 2016-01-20
JP2014506724A (ja) 2014-03-17
EP3489374A1 (en) 2019-05-29
EP3489374B1 (en) 2022-09-21
US20210149093A1 (en) 2021-05-20
WO2012098062A2 (en) 2012-07-26
CN105353433B (zh) 2019-08-23
JP6023083B2 (ja) 2016-11-09
US10935704B2 (en) 2021-03-02
DE102011002953A1 (de) 2012-07-26
US20130301151A1 (en) 2013-11-14
KR102080180B1 (ko) 2020-02-24
KR20140018245A (ko) 2014-02-12
CN110376670B (zh) 2022-03-22
EP2665839A2 (en) 2013-11-27

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