SG10201608338PA - Polyoxometalate and heteropolyoxometalate compositions and methods for their use - Google Patents
Polyoxometalate and heteropolyoxometalate compositions and methods for their useInfo
- Publication number
- SG10201608338PA SG10201608338PA SG10201608338PA SG10201608338PA SG10201608338PA SG 10201608338P A SG10201608338P A SG 10201608338PA SG 10201608338P A SG10201608338P A SG 10201608338PA SG 10201608338P A SG10201608338P A SG 10201608338PA SG 10201608338P A SG10201608338P A SG 10201608338PA
- Authority
- SG
- Singapore
- Prior art keywords
- heteropolyoxometalate
- polyoxometalate
- compositions
- methods
- heteropolyoxometalate compositions
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title 1
- 239000013460 polyoxometalate Substances 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L29/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical; Compositions of hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Compositions of derivatives of such polymers
- C08L29/02—Homopolymers or copolymers of unsaturated alcohols
- C08L29/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/47—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Paints Or Removers (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Formation Of Insulating Films (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/154,929 US9409793B2 (en) | 2014-01-14 | 2014-01-14 | Spin coatable metallic hard mask compositions and processes thereof |
US14/445,757 US9418836B2 (en) | 2014-01-14 | 2014-07-29 | Polyoxometalate and heteropolyoxometalate compositions and methods for their use |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201608338PA true SG10201608338PA (en) | 2016-11-29 |
Family
ID=52014110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201608338PA SG10201608338PA (en) | 2014-01-14 | 2014-12-08 | Polyoxometalate and heteropolyoxometalate compositions and methods for their use |
Country Status (9)
Country | Link |
---|---|
US (1) | US9418836B2 (zh) |
EP (3) | EP3276416A1 (zh) |
JP (1) | JP6316441B2 (zh) |
KR (2) | KR102123144B1 (zh) |
CN (2) | CN110609445B (zh) |
IL (1) | IL246383A0 (zh) |
SG (1) | SG10201608338PA (zh) |
TW (2) | TWI600730B (zh) |
WO (1) | WO2015106885A1 (zh) |
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US9201305B2 (en) | 2013-06-28 | 2015-12-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
US9409793B2 (en) * | 2014-01-14 | 2016-08-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin coatable metallic hard mask compositions and processes thereof |
US9583358B2 (en) | 2014-05-30 | 2017-02-28 | Samsung Electronics Co., Ltd. | Hardmask composition and method of forming pattern by using the hardmask composition |
KR102287343B1 (ko) | 2014-07-04 | 2021-08-06 | 삼성전자주식회사 | 하드마스크 조성물 및 이를 이용한 패턴의 형성방법 |
KR102287344B1 (ko) * | 2014-07-25 | 2021-08-06 | 삼성전자주식회사 | 하드마스크 조성물 및 이를 이용한 패턴의 형성방법 |
KR102384226B1 (ko) | 2015-03-24 | 2022-04-07 | 삼성전자주식회사 | 하드마스크 조성물 및 이를 이용한 패턴 형성방법 |
KR102463893B1 (ko) | 2015-04-03 | 2022-11-04 | 삼성전자주식회사 | 하드마스크 조성물 및 이를 이용한 패턴의 형성방법 |
FR3046602B1 (fr) * | 2016-01-12 | 2022-08-05 | Centre Nat Rech Scient | Solution d'ions tungstates et dispositif photovoltaique hybride |
KR102202932B1 (ko) * | 2016-11-04 | 2021-01-14 | 주식회사 엘지화학 | 코팅 조성물 |
CN106669420B (zh) * | 2017-02-17 | 2019-08-16 | 山东大学 | 一种多金属氧酸盐水溶液脱硫后的电化学再生方法 |
KR102537120B1 (ko) * | 2017-05-02 | 2023-05-26 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성 조성물 |
US11034847B2 (en) | 2017-07-14 | 2021-06-15 | Samsung Electronics Co., Ltd. | Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition |
KR102433666B1 (ko) | 2017-07-27 | 2022-08-18 | 삼성전자주식회사 | 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크 |
KR102486388B1 (ko) | 2017-07-28 | 2023-01-09 | 삼성전자주식회사 | 그래핀 양자점의 제조방법, 상기 제조방법에 따라 얻어진 그래핀 양자점을 포함한 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크 |
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CN114026187B (zh) * | 2019-06-27 | 2023-03-10 | 3M创新有限公司 | 具有高折射率的金属-聚合物杂化材料 |
CN111025811A (zh) * | 2019-09-25 | 2020-04-17 | 吉林化工学院 | 一种电致变色薄膜及其制备方法和应用 |
CN111634948A (zh) * | 2020-06-19 | 2020-09-08 | 厦门钨业股份有限公司 | 一种消除仲钨酸铵产品中黑点异物的方法 |
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CN116349428A (zh) * | 2020-10-08 | 2023-06-27 | 3M创新有限公司 | 具有高折射率的金属-聚合物杂化材料 |
WO2022123725A1 (ja) * | 2020-12-10 | 2022-06-16 | 株式会社日立ハイテク | 半導体製造方法及び半導体製造装置 |
CN113104892B (zh) * | 2021-04-26 | 2022-08-23 | 武汉大学 | 一种利用化学插层辅助液相剥离制备大尺寸超薄二硫化钼纳米片的方法及其制备的产品 |
CN113406155B (zh) * | 2021-06-23 | 2022-08-05 | 长春理工大学 | 氧化锡/多酸/氧化钨三层同轴纳米纤维气体传感材料及其制备方法 |
CN113913061B (zh) * | 2021-11-22 | 2022-07-26 | 亚士创能科技(上海)股份有限公司 | 隔热保温耐候涂料及其制备方法和应用 |
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KR20120117912A (ko) * | 2010-02-15 | 2012-10-24 | 코넬 유니버시티 | 전기방사 장치 및 이로부터 제조된 나노섬유 |
EP2400304A1 (en) | 2010-06-22 | 2011-12-28 | Centro de Investigación Cooperativa En Biomateriales ( CIC biomaGUNE) | Method for the characterization of intermolecular interactions |
CN101973582B (zh) * | 2010-09-27 | 2012-11-21 | 浙江大学 | 一种制备密度可调的TiO2纳米棒阵列的方法 |
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- 2014-12-08 EP EP14809018.6A patent/EP3095008B1/en active Active
- 2014-12-08 CN CN201480072379.5A patent/CN105900014B/zh active Active
- 2014-12-08 WO PCT/EP2014/076919 patent/WO2015106885A1/en active Application Filing
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JP2017511780A (ja) | 2017-04-27 |
EP3812839A1 (en) | 2021-04-28 |
CN105900014A (zh) | 2016-08-24 |
US9418836B2 (en) | 2016-08-16 |
EP3276416A1 (en) | 2018-01-31 |
KR101833159B1 (ko) | 2018-04-13 |
US20150200091A1 (en) | 2015-07-16 |
TW201720880A (zh) | 2017-06-16 |
KR102123144B1 (ko) | 2020-06-16 |
TW201534671A (zh) | 2015-09-16 |
WO2015106885A1 (en) | 2015-07-23 |
CN110609445B (zh) | 2023-10-03 |
TWI600730B (zh) | 2017-10-01 |
EP3095008A1 (en) | 2016-11-23 |
KR20170118970A (ko) | 2017-10-25 |
TWI637033B (zh) | 2018-10-01 |
EP3812839B1 (en) | 2022-05-11 |
CN110609445A (zh) | 2019-12-24 |
CN105900014B (zh) | 2019-09-03 |
KR20160107310A (ko) | 2016-09-13 |
JP6316441B2 (ja) | 2018-04-25 |
IL246383A0 (en) | 2016-08-31 |
EP3095008B1 (en) | 2021-02-24 |
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