SG10201606137YA - Current forming of resistive random access memory (rram) cell filament - Google Patents

Current forming of resistive random access memory (rram) cell filament

Info

Publication number
SG10201606137YA
SG10201606137YA SG10201606137YA SG10201606137YA SG10201606137YA SG 10201606137Y A SG10201606137Y A SG 10201606137YA SG 10201606137Y A SG10201606137Y A SG 10201606137YA SG 10201606137Y A SG10201606137Y A SG 10201606137YA SG 10201606137Y A SG10201606137Y A SG 10201606137YA
Authority
SG
Singapore
Prior art keywords
rram
random access
access memory
resistive random
current forming
Prior art date
Application number
SG10201606137YA
Other languages
English (en)
Inventor
Santosh Hariharan
Hieu Van Tran
Feng Zhou
Xian Liu
Steven Lemke
Nhan Do
Zhixian Chen
Xinpeng Wang
Original Assignee
Silicon Storage Tech Inc
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Storage Tech Inc, Agency Science Tech & Res filed Critical Silicon Storage Tech Inc
Priority to SG10201606137YA priority Critical patent/SG10201606137YA/en
Priority to KR1020197005711A priority patent/KR102155461B1/ko
Priority to JP2019503910A priority patent/JP6959325B2/ja
Priority to US15/597,709 priority patent/US10276236B2/en
Priority to EP17834901.5A priority patent/EP3491556A4/en
Priority to PCT/US2017/033170 priority patent/WO2018022174A1/en
Priority to CN201780046525.0A priority patent/CN109863489B/zh
Priority to TW106120620A priority patent/TWI643198B/zh
Publication of SG10201606137YA publication Critical patent/SG10201606137YA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G11C2013/0066—Verify correct writing whilst writing is in progress, e.g. by detecting onset or cessation of current flow in cell and using the detector output to terminate writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0088—Write with the simultaneous writing of a plurality of cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
SG10201606137YA 2016-07-26 2016-07-26 Current forming of resistive random access memory (rram) cell filament SG10201606137YA (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SG10201606137YA SG10201606137YA (en) 2016-07-26 2016-07-26 Current forming of resistive random access memory (rram) cell filament
KR1020197005711A KR102155461B1 (ko) 2016-07-26 2017-05-17 저항성 랜덤 액세스 메모리(rram) 셀 필라멘트의 전류 형성
JP2019503910A JP6959325B2 (ja) 2016-07-26 2017-05-17 抵抗変化型メモリ（ｒｒａｍ）セルフィラメントの電流形成
US15/597,709 US10276236B2 (en) 2016-07-26 2017-05-17 Resistive random access memory (RRAM) cell filament formation using current waveforms
EP17834901.5A EP3491556A4 (en) 2016-07-26 2017-05-17 PRODUCTION OF A CELL FILM OF A RESISTIVE DIRECT ACCESS MEMORY (RRAM) BY MEANS OF POWER
PCT/US2017/033170 WO2018022174A1 (en) 2016-07-26 2017-05-17 Current forming of resistive random access memory (rram) cell filament
CN201780046525.0A CN109863489B (zh) 2016-07-26 2017-05-17 电阻式随机存取存储器(rram)单元细丝的电流形成
TW106120620A TWI643198B (zh) 2016-07-26 2017-06-20 電阻式隨機存取記憶體(rram)單元細絲的電流形成

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG10201606137YA SG10201606137YA (en) 2016-07-26 2016-07-26 Current forming of resistive random access memory (rram) cell filament

Publications (1)

Publication Number Publication Date
SG10201606137YA true SG10201606137YA (en) 2018-02-27

Family

ID=61009967

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201606137YA SG10201606137YA (en) 2016-07-26 2016-07-26 Current forming of resistive random access memory (rram) cell filament

Country Status (8)

Country Link
US (1) US10276236B2 (zh)
EP (1) EP3491556A4 (zh)
JP (1) JP6959325B2 (zh)
KR (1) KR102155461B1 (zh)
CN (1) CN109863489B (zh)
SG (1) SG10201606137YA (zh)
TW (1) TWI643198B (zh)
WO (1) WO2018022174A1 (zh)

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* Cited by examiner, † Cited by third party
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US11049559B1 (en) * 2020-06-11 2021-06-29 Sandisk Technologies Llc Subthreshold voltage forming of selectors in a crosspoint memory array
CN114267393B (zh) * 2021-06-02 2023-12-26 青岛昇瑞光电科技有限公司 非易失性存储器及其导电细丝产生方法、设定/重置方法

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Also Published As

Publication number Publication date
TWI643198B (zh) 2018-12-01
EP3491556A4 (en) 2020-04-01
US20180033482A1 (en) 2018-02-01
TW201804475A (zh) 2018-02-01
KR20190044068A (ko) 2019-04-29
JP2019527910A (ja) 2019-10-03
US10276236B2 (en) 2019-04-30
EP3491556A1 (en) 2019-06-05
KR102155461B1 (ko) 2020-09-14
JP6959325B2 (ja) 2021-11-02
WO2018022174A1 (en) 2018-02-01
CN109863489A (zh) 2019-06-07
CN109863489B (zh) 2024-01-05

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