SG10201603903QA - Wafer producing method - Google Patents
Wafer producing methodInfo
- Publication number
- SG10201603903QA SG10201603903QA SG10201603903QA SG10201603903QA SG10201603903QA SG 10201603903Q A SG10201603903Q A SG 10201603903QA SG 10201603903Q A SG10201603903Q A SG 10201603903QA SG 10201603903Q A SG10201603903Q A SG 10201603903QA SG 10201603903Q A SG10201603903Q A SG 10201603903QA
- Authority
- SG
- Singapore
- Prior art keywords
- producing method
- wafer producing
- wafer
- producing
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
- B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015112317A JP6482389B2 (ja) | 2015-06-02 | 2015-06-02 | ウエーハの生成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201603903QA true SG10201603903QA (en) | 2017-01-27 |
Family
ID=57352617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201603903QA SG10201603903QA (en) | 2015-06-02 | 2016-05-16 | Wafer producing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US9815138B2 (zh) |
JP (1) | JP6482389B2 (zh) |
KR (1) | KR102439404B1 (zh) |
CN (1) | CN106216858B (zh) |
DE (1) | DE102016209555A1 (zh) |
MY (1) | MY181116A (zh) |
SG (1) | SG10201603903QA (zh) |
TW (1) | TWI683736B (zh) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6358941B2 (ja) | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | ウエーハの生成方法 |
JP6358940B2 (ja) * | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | ウエーハの生成方法 |
JP6399913B2 (ja) * | 2014-12-04 | 2018-10-03 | 株式会社ディスコ | ウエーハの生成方法 |
JP6399914B2 (ja) * | 2014-12-04 | 2018-10-03 | 株式会社ディスコ | ウエーハの生成方法 |
JP6391471B2 (ja) | 2015-01-06 | 2018-09-19 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395633B2 (ja) | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395632B2 (ja) | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6494382B2 (ja) | 2015-04-06 | 2019-04-03 | 株式会社ディスコ | ウエーハの生成方法 |
JP6425606B2 (ja) | 2015-04-06 | 2018-11-21 | 株式会社ディスコ | ウエーハの生成方法 |
JP6429715B2 (ja) | 2015-04-06 | 2018-11-28 | 株式会社ディスコ | ウエーハの生成方法 |
JP6456228B2 (ja) * | 2015-04-15 | 2019-01-23 | 株式会社ディスコ | 薄板の分離方法 |
JP6472333B2 (ja) | 2015-06-02 | 2019-02-20 | 株式会社ディスコ | ウエーハの生成方法 |
JP6478821B2 (ja) * | 2015-06-05 | 2019-03-06 | 株式会社ディスコ | ウエーハの生成方法 |
JP6482423B2 (ja) | 2015-07-16 | 2019-03-13 | 株式会社ディスコ | ウエーハの生成方法 |
JP6472347B2 (ja) | 2015-07-21 | 2019-02-20 | 株式会社ディスコ | ウエーハの薄化方法 |
JP6482425B2 (ja) | 2015-07-21 | 2019-03-13 | 株式会社ディスコ | ウエーハの薄化方法 |
JP6690983B2 (ja) | 2016-04-11 | 2020-04-28 | 株式会社ディスコ | ウエーハ生成方法及び実第2のオリエンテーションフラット検出方法 |
JP2018093046A (ja) * | 2016-12-02 | 2018-06-14 | 株式会社ディスコ | ウエーハ生成方法 |
JP6858587B2 (ja) | 2017-02-16 | 2021-04-14 | 株式会社ディスコ | ウエーハ生成方法 |
JP6795811B2 (ja) * | 2017-02-16 | 2020-12-02 | 国立大学法人埼玉大学 | 剥離基板製造方法 |
CN110691671B (zh) * | 2017-04-20 | 2023-10-10 | 西尔特克特拉有限责任公司 | 用于具有限定地定向的改性线的晶片制造的方法 |
JP7267923B2 (ja) * | 2017-09-04 | 2023-05-02 | リンテック株式会社 | 薄型化板状部材の製造方法、及び薄型化板状部材の製造装置 |
JP6896344B2 (ja) * | 2017-09-22 | 2021-06-30 | 株式会社ディスコ | チップの製造方法 |
JP7121941B2 (ja) * | 2018-03-09 | 2022-08-19 | 国立大学法人埼玉大学 | 基板製造方法 |
JP7073172B2 (ja) * | 2018-04-03 | 2022-05-23 | 株式会社ディスコ | ウエーハの生成方法 |
US10388526B1 (en) | 2018-04-20 | 2019-08-20 | Semiconductor Components Industries, Llc | Semiconductor wafer thinning systems and related methods |
US10896815B2 (en) | 2018-05-22 | 2021-01-19 | Semiconductor Components Industries, Llc | Semiconductor substrate singulation systems and related methods |
US11121035B2 (en) | 2018-05-22 | 2021-09-14 | Semiconductor Components Industries, Llc | Semiconductor substrate processing methods |
US20190363018A1 (en) | 2018-05-24 | 2019-11-28 | Semiconductor Components Industries, Llc | Die cleaning systems and related methods |
US10468304B1 (en) | 2018-05-31 | 2019-11-05 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US11830771B2 (en) | 2018-05-31 | 2023-11-28 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US10940611B2 (en) | 2018-07-26 | 2021-03-09 | Halo Industries, Inc. | Incident radiation induced subsurface damage for controlled crack propagation in material cleavage |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
JP7330771B2 (ja) * | 2019-06-14 | 2023-08-22 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
TW202116468A (zh) * | 2019-07-18 | 2021-05-01 | 日商東京威力科創股份有限公司 | 處理裝置及處理方法 |
JP7427189B2 (ja) * | 2020-01-31 | 2024-02-05 | 国立大学法人東海国立大学機構 | レーザ加工方法、半導体部材製造方法、及び、レーザ加工装置 |
JP7405365B2 (ja) * | 2020-01-31 | 2023-12-26 | 国立大学法人東海国立大学機構 | レーザ加工方法、半導体部材製造方法、及び、レーザ加工装置 |
CN111940420B (zh) * | 2020-07-17 | 2022-08-09 | 中科光绘(上海)科技有限公司 | 窗口渐进式的激光清洗方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000094221A (ja) * | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | 放電式ワイヤソー |
TWI261358B (en) * | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
GB2402230B (en) * | 2003-05-30 | 2006-05-03 | Xsil Technology Ltd | Focusing an optical beam to two foci |
JP3998639B2 (ja) | 2004-01-13 | 2007-10-31 | 株式会社東芝 | 半導体発光素子の製造方法 |
US20050217560A1 (en) | 2004-03-31 | 2005-10-06 | Tolchinsky Peter G | Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same |
KR20100070159A (ko) * | 2008-12-17 | 2010-06-25 | 삼성전자주식회사 | 웨이퍼 가공방법 |
JP5446325B2 (ja) * | 2009-03-03 | 2014-03-19 | 豊田合成株式会社 | レーザ加工方法および化合物半導体発光素子の製造方法 |
EP2422374A4 (en) * | 2009-04-21 | 2016-09-14 | Tetrasun Inc | METHOD FOR PRODUCING STRUCTURES FOR A SOLAR CELL |
US20120104284A1 (en) * | 2009-07-07 | 2012-05-03 | Koninklijke Philips Electronics N.V. | Patterning device for generating a pattern in and/or on a layer |
JP5537081B2 (ja) * | 2009-07-28 | 2014-07-02 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
KR20130103624A (ko) * | 2011-02-10 | 2013-09-23 | 신에츠 폴리머 가부시키가이샤 | 단결정 기판 제조 방법 및 내부 개질층 형성 단결정 부재 |
JP5917862B2 (ja) * | 2011-08-30 | 2016-05-18 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
JP5940906B2 (ja) * | 2012-06-19 | 2016-06-29 | 株式会社ディスコ | レーザー加工装置 |
JP2014041925A (ja) | 2012-08-22 | 2014-03-06 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
WO2014179368A1 (en) * | 2013-04-29 | 2014-11-06 | Solexel, Inc. | Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate |
CN103495805A (zh) * | 2013-09-27 | 2014-01-08 | 苏州德龙激光股份有限公司 | 激光打点装置 |
JP2016015463A (ja) * | 2014-06-10 | 2016-01-28 | エルシード株式会社 | SiC材料の加工方法及びSiC材料 |
JP6390898B2 (ja) * | 2014-08-22 | 2018-09-19 | アイシン精機株式会社 | 基板の製造方法、加工対象物の切断方法、及び、レーザ加工装置 |
JP6486239B2 (ja) * | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | ウエーハの加工方法 |
JP6486240B2 (ja) * | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | ウエーハの加工方法 |
-
2015
- 2015-06-02 JP JP2015112317A patent/JP6482389B2/ja active Active
-
2016
- 2016-05-02 TW TW105113658A patent/TWI683736B/zh active
- 2016-05-16 MY MYPI2016701750A patent/MY181116A/en unknown
- 2016-05-16 SG SG10201603903QA patent/SG10201603903QA/en unknown
- 2016-05-25 KR KR1020160063918A patent/KR102439404B1/ko active IP Right Grant
- 2016-05-26 US US15/165,686 patent/US9815138B2/en active Active
- 2016-05-31 CN CN201610373778.6A patent/CN106216858B/zh active Active
- 2016-06-01 DE DE102016209555.2A patent/DE102016209555A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
US9815138B2 (en) | 2017-11-14 |
DE102016209555A1 (de) | 2016-12-08 |
CN106216858B (zh) | 2020-02-21 |
TWI683736B (zh) | 2020-02-01 |
US20160354863A1 (en) | 2016-12-08 |
KR20160142232A (ko) | 2016-12-12 |
MY181116A (en) | 2020-12-18 |
CN106216858A (zh) | 2016-12-14 |
JP2016225536A (ja) | 2016-12-28 |
JP6482389B2 (ja) | 2019-03-13 |
KR102439404B1 (ko) | 2022-09-01 |
TW201700250A (zh) | 2017-01-01 |
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