JP7121941B2 - 基板製造方法 - Google Patents
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- JP7121941B2 JP7121941B2 JP2018043006A JP2018043006A JP7121941B2 JP 7121941 B2 JP7121941 B2 JP 7121941B2 JP 2018043006 A JP2018043006 A JP 2018043006A JP 2018043006 A JP2018043006 A JP 2018043006A JP 7121941 B2 JP7121941 B2 JP 7121941B2
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Description
以下、酸化マグネシウム単結晶基板から薄厚の酸化マグネシウム単結晶基板を製造する例を、添付図面を参照しつつ説明する。
本発明者は、図3に示すように、直径が2インチで厚みが300μmの単結晶酸化マグネシウムウエハ(図3参照。以下、テストピースJ1という)を用いた。
本実験例では、上記実施形態で説明した基板製造装置10を用い、上記の第1~第3工程を行った。第2工程では、図4(a)に示すように、テストピースJ1に加工痕K1を所定のドットピッチdp、ラインピッチlp1で形成していった。第3工程では、同じく図4(a)に示すように、テストピースJ1に加工痕K2を所定のドットピッチdp、ラインピッチlp2で形成していった。この結果、加工痕列LK1および加工痕列LK2が配列されている改質層が形成された。このレーザ光照射では、集光レンズ15への入射時のレーザ光Bの径を3000μm、集光レンズ15の焦点距離を1200μm、焦点の基板表面からの深さを150μm±10μm以内とした。レーザ光のその他の照射条件を図4(b)に示す。
図3は、第3工程を終了した、剥離前のテストピースJ1の平面図である。加工状態を判別し易くするために、紙面上部には加工が不十分な部分を意図的に残した。それ以外の部分では加工ムラは抑制された。
本実験例の照射条件でレーザ光を照射した後、上部テストピースJ1uと下部テストピースJ1bとを分離することで、格子欠陥が少ない薄厚の酸化マグネシウム単結晶基板を容易に得ることができた。
本発明者は、上部テストピースJ1uの剥離面J1usで、P1点からP5点まで表面粗さ計(プローブ半径は12.5μm)を用いて段差測定を行った。測定結果を図11に示す。また、本発明者は、同様にして、下部テストピースJ1bの剥離面J1bsを、P1点からP5点まで表面粗さ計を用いて段差測定を行った。測定結果を図11に併せて示す。Raが0.46μmという測定結果になった。
本発明者は、上部テストピースJ1uの加工痕上半部Ku1(1回目のレーザ照射による加工痕)を通過する断面Su1をSEMで観察した(図12参照)。上部テストピースJ1uの加工痕上半部Ku1では、径が0.9μmφ、深さが5.0μmであった。
11 XYステージ
11f ステージ面
12 基板載置用部材
13 補正環
14 レーザ集光手段
15 集光レンズ
16 第1レンズ
18 第2レンズ
20 酸化マグネシウム単結晶基板(単結晶部材)
20p 剥離基板
20r 被照射面
B レーザ光
E 外周部
EP 集光点
K1 加工痕
K2 加工痕
L1 照射ライン
L2 照射ライン
LK1 加工痕列
LK2 加工痕列
M 中央部
MP 集光点
dp ドットピッチ
lp1 ラインピッチ
lp2 ラインピッチ
Claims (6)
- レーザ光を集光するレーザ集光手段を、酸化マグネシウムの単結晶部材の被照射面上に非接触に配置する第1工程と、
前記レーザ集光手段を用い、所定の照射条件で、前記単結晶部材表面にレーザ光を照射して前記単結晶部材内部にレーザ光を集光しつつ前記レーザ集光手段と前記単結晶部材とを二次元状に相対的に移動させることにより加工痕列を並列に形成していく第2工程と、
前記レーザ集光手段を用い、所定の照射条件で、前記単結晶部材表面にレーザ光を照射して前記単結晶部材内部にレーザ光を集光しつつ前記レーザ集光手段と前記単結晶部材とを二次元状に相対的に移動させることにより、前記第2工程の照射によって形成された隣り合う前記加工痕列の間に新たに加工痕列を形成していくことで面状剥離を生じさせる第3工程と
を備え、
前記第2工程では、レーザ光の集光によって、レーザ光を反射する反射層を形成し、
前記第3工程では、前記反射層によってレーザ光が反射されることを特徴とする基板製造方法。 - 前記単結晶部材として単結晶基板を用いることを特徴とする請求項1に記載の基板製造方法。
- レーザ光として高輝度レーザ光を照射することを特徴とする請求項1又は2に記載の基板製造方法。
- レーザ光としてパルス幅が10ns以下のレーザ光を照射することを特徴とする請求項3に記載の基板製造方法。
- レーザ光としてパルス幅が100ps以下のレーザ光を照射することを特徴とする請求項4に記載の基板製造方法。
- レーザ光としてパルス幅が15ps以下のレーザ光を照射することを特徴とする請求項5に記載の基板製造方法。
Priority Applications (6)
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JP2018043006A JP7121941B2 (ja) | 2018-03-09 | 2018-03-09 | 基板製造方法 |
EP19161290.2A EP3536437B1 (en) | 2018-03-09 | 2019-03-07 | Substrate manufacturing method |
KR1020190026431A KR102195946B1 (ko) | 2018-03-09 | 2019-03-07 | 기판 제조 방법 |
CN201910177308.6A CN110246758B (zh) | 2018-03-09 | 2019-03-08 | 基板制造方法 |
US16/296,702 US10971358B2 (en) | 2018-03-09 | 2019-03-08 | Method of making a peeled magnesium oxide substrate using laser irradiation |
TW108107863A TWI700402B (zh) | 2018-03-09 | 2019-03-08 | 基板製造方法 |
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US (1) | US10971358B2 (ja) |
EP (1) | EP3536437B1 (ja) |
JP (1) | JP7121941B2 (ja) |
KR (1) | KR102195946B1 (ja) |
CN (1) | CN110246758B (ja) |
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US10971358B2 (en) | 2021-04-06 |
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