SG10201603502VA - TiN HARD MASK AND ETCH RESIDUE REMOVAL - Google Patents
TiN HARD MASK AND ETCH RESIDUE REMOVALInfo
- Publication number
- SG10201603502VA SG10201603502VA SG10201603502VA SG10201603502VA SG10201603502VA SG 10201603502V A SG10201603502V A SG 10201603502VA SG 10201603502V A SG10201603502V A SG 10201603502VA SG 10201603502V A SG10201603502V A SG 10201603502VA SG 10201603502V A SG10201603502V A SG 10201603502VA
- Authority
- SG
- Singapore
- Prior art keywords
- hard mask
- residue removal
- etch residue
- tin hard
- tin
- Prior art date
Links
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3769—(Co)polymerised monomers containing nitrogen, e.g. carbonamides, nitriles or amines
- C11D3/3773—(Co)polymerised monomers containing nitrogen, e.g. carbonamides, nitriles or amines in liquid compositions
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76865—Selective removal of parts of the layer
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Detergent Compositions (AREA)
- ing And Chemical Polishing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562155794P | 2015-05-01 | 2015-05-01 | |
US201562164293P | 2015-05-20 | 2015-05-20 | |
US201662281658P | 2016-01-21 | 2016-01-21 | |
US15/138,835 US9976111B2 (en) | 2015-05-01 | 2016-04-26 | TiN hard mask and etch residual removal |
Publications (1)
Publication Number | Publication Date |
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SG10201603502VA true SG10201603502VA (en) | 2016-12-29 |
Family
ID=55862670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201603502VA SG10201603502VA (en) | 2015-05-01 | 2016-05-03 | TiN HARD MASK AND ETCH RESIDUE REMOVAL |
Country Status (9)
Country | Link |
---|---|
US (2) | US9976111B2 (zh) |
EP (1) | EP3089200B1 (zh) |
JP (2) | JP6309999B2 (zh) |
KR (2) | KR101912400B1 (zh) |
CN (2) | CN106226991B (zh) |
MY (1) | MY173184A (zh) |
PH (1) | PH12016000170A1 (zh) |
SG (1) | SG10201603502VA (zh) |
TW (2) | TWI660029B (zh) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6494254B2 (ja) * | 2014-11-18 | 2019-04-03 | 関東化學株式会社 | 銅、モリブデン金属積層膜エッチング液組成物、該組成物を用いたエッチング方法および該組成物の寿命を延ばす方法 |
US9976111B2 (en) * | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
WO2017167797A1 (en) * | 2016-03-29 | 2017-10-05 | Technic France | Solution and method for etching titanium based materials |
WO2018098139A1 (en) | 2016-11-25 | 2018-05-31 | Entegris, Inc. | Cleaning compositions for removing post etch residue |
KR102469931B1 (ko) * | 2017-03-28 | 2022-11-23 | 동우 화인켐 주식회사 | 마스크 세정액 조성물, 마스크 세정액 예비-조성물, 및 마스크 세정액 조성물의 제조방법 |
WO2018181896A1 (ja) * | 2017-03-31 | 2018-10-04 | 関東化學株式会社 | チタン層またはチタン含有層のエッチング液組成物およびエッチング方法 |
US10515862B2 (en) * | 2017-04-05 | 2019-12-24 | Applied Materials, Inc. | Wafer based corrosion and time dependent chemical effects |
CN107357143B (zh) | 2017-07-25 | 2018-06-19 | 上海新阳半导体材料股份有限公司 | 一种清洗剂、其制备方法和应用 |
DE102017128399B4 (de) * | 2017-07-31 | 2023-11-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Verfahren zur Herstellung einer Halbleitervorrichtung |
US10312106B2 (en) | 2017-07-31 | 2019-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
IL274880B2 (en) * | 2017-12-08 | 2024-04-01 | Basf Se | Composition and process for selectively burning a layer containing an aluminum compound in the presence of layers of materials with low K, copper and/or cobalt |
SG11202006397TA (en) | 2018-01-03 | 2020-08-28 | Ecolab Usa Inc | Process and method for reducing metal corrosion in water |
US10934484B2 (en) * | 2018-03-09 | 2021-03-02 | Versum Materials Us, Llc | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device |
US11499236B2 (en) * | 2018-03-16 | 2022-11-15 | Versum Materials Us, Llc | Etching solution for tungsten word line recess |
CN108707899A (zh) * | 2018-05-16 | 2018-10-26 | 深圳仕上电子科技有限公司 | 利用双氧水溶液剥离钛和氮化钛膜的方法 |
US11017995B2 (en) | 2018-07-26 | 2021-05-25 | Versum Materials Us, Llc | Composition for TiN hard mask removal and etch residue cleaning |
US11946148B2 (en) * | 2019-01-11 | 2024-04-02 | Versum Materials Us, Llc | Hafnium oxide corrosion inhibitor |
EP3926662A4 (en) * | 2019-02-13 | 2023-01-11 | Tokuyama Corporation | PROCESSING SOLUTION CONTAINING ONIUM SALT FOR SEMICONDUCTOR WAFER |
CN111969104B (zh) * | 2019-05-20 | 2023-09-12 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
TW202106859A (zh) * | 2019-06-03 | 2021-02-16 | 美商富士軟片電子材料美國股份有限公司 | 蝕刻組成物 |
JP2020202320A (ja) | 2019-06-12 | 2020-12-17 | 関東化学株式会社 | 過酸化水素分解抑制剤 |
KR20210100258A (ko) * | 2020-02-05 | 2021-08-17 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
CN113430066B (zh) * | 2020-03-23 | 2024-04-19 | 上海新阳半导体材料股份有限公司 | 用于选择性移除硬遮罩的清洗组合物、其制备方法及应用 |
TWI789741B (zh) * | 2020-04-14 | 2023-01-11 | 美商恩特葛瑞斯股份有限公司 | 蝕刻鉬之方法及組合物 |
TWI824299B (zh) * | 2020-09-22 | 2023-12-01 | 美商恩特葛瑞斯股份有限公司 | 蝕刻劑組合物 |
EP4207250A1 (en) | 2020-09-29 | 2023-07-05 | Mitsubishi Gas Chemical Company, Inc. | Composition for cleaning semiconductor substrate, and cleaning method |
DE102022113998A1 (de) * | 2022-06-02 | 2023-12-07 | Betek Gmbh & Co. Kg | Entschichtungslösung, Verfahren und Vorrichtung zum nasschemischen Entfernen einer PVD- oder CVD-Titannitrid-Schicht von einem Hartmetall-Trägerelement |
CN115141629B (zh) * | 2022-06-15 | 2023-06-02 | 湖北兴福电子材料股份有限公司 | TiN去除液 |
CN115011347B (zh) * | 2022-06-30 | 2023-12-29 | 湖北兴福电子材料股份有限公司 | 一种氮化铝和钨的选择性蚀刻液 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
JP3515041B2 (ja) * | 2000-03-13 | 2004-04-05 | 沖電気工業株式会社 | 半導体素子の製造方法 |
US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
JP2005064285A (ja) * | 2003-08-14 | 2005-03-10 | Hitachi Chem Co Ltd | Cmp用研磨液及び研磨方法 |
BRPI0413657A (pt) | 2003-08-19 | 2006-10-24 | Mallinckrodt Baker Inc | Composição aquosa, isenta de silicato, para limpeza de substratos microeletrÈnicos, bem como processo para limpeza de um substrato microeletrÈnico sem produzir qualquer corrosão metálica substancial |
JP4774669B2 (ja) * | 2003-10-27 | 2011-09-14 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
WO2006110279A1 (en) | 2005-04-08 | 2006-10-19 | Sachem, Inc. | Selective wet etching of metal nitrides |
KR101444468B1 (ko) | 2005-10-05 | 2014-10-30 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제 |
KR20100082012A (ko) | 2007-11-16 | 2010-07-15 | 이케이씨 테크놀로지, 인코포레이티드 | 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물 |
US20110147341A1 (en) | 2008-09-09 | 2011-06-23 | Showa Denko K.K. | Etching solution for titanium-based metal, tungsten-based metal, titanium/tungsten-based metal or their nitrides |
SG175820A1 (en) | 2009-05-07 | 2011-12-29 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
US8883358B2 (en) | 2010-07-02 | 2014-11-11 | Hitachi, Ltd. | Metal air secondary battery |
US20130045908A1 (en) | 2011-08-15 | 2013-02-21 | Hua Cui | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
US9257270B2 (en) | 2011-08-15 | 2016-02-09 | Ekc Technology | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
JP6329909B2 (ja) * | 2011-12-28 | 2018-05-23 | インテグリス・インコーポレーテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
SG11201407657YA (en) * | 2012-05-18 | 2014-12-30 | Advanced Tech Materials | Aqueous clean solution with low copper etch rate for organic residue removal improvement |
JP2014093407A (ja) | 2012-11-02 | 2014-05-19 | Fujifilm Corp | エッチング液、これを用いたエッチング方法及び半導体素子の製造方法 |
CN105102584B (zh) | 2013-03-04 | 2018-09-21 | 恩特格里斯公司 | 用于选择性蚀刻氮化钛的组合物和方法 |
SG11201509933QA (en) | 2013-06-06 | 2016-01-28 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
US10428271B2 (en) | 2013-08-30 | 2019-10-01 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
WO2015054460A1 (en) | 2013-10-11 | 2015-04-16 | E. I. Du Pont De Nemours And Company | Removal composition for selectively removing hard mask |
US20150104952A1 (en) * | 2013-10-11 | 2015-04-16 | Ekc Technology, Inc. | Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper |
US9873833B2 (en) * | 2014-12-29 | 2018-01-23 | Versum Materials Us, Llc | Etchant solutions and method of use thereof |
US9976111B2 (en) * | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
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CN106226991B (zh) | 2020-09-04 |
TW201639947A (zh) | 2016-11-16 |
JP2016213461A (ja) | 2016-12-15 |
TWI660029B (zh) | 2019-05-21 |
CN106226991A (zh) | 2016-12-14 |
CN108121149A (zh) | 2018-06-05 |
JP6503102B2 (ja) | 2019-04-17 |
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