HK1222892A1 - 選擇性金屬/金屬氧化物刻蝕方法 - Google Patents
選擇性金屬/金屬氧化物刻蝕方法Info
- Publication number
- HK1222892A1 HK1222892A1 HK16111034.7A HK16111034A HK1222892A1 HK 1222892 A1 HK1222892 A1 HK 1222892A1 HK 16111034 A HK16111034 A HK 16111034A HK 1222892 A1 HK1222892 A1 HK 1222892A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- metal
- etch process
- oxide etch
- selective
- metal oxide
- Prior art date
Links
- 239000002184 metal Substances 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/36—Alkaline compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/38—Alkaline compositions for etching refractory metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461927346P | 2014-01-14 | 2014-01-14 | |
PCT/US2015/011130 WO2015108842A1 (en) | 2014-01-14 | 2015-01-13 | Selective metal/metal oxide etch process |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1222892A1 true HK1222892A1 (zh) | 2017-07-14 |
Family
ID=52432976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK16111034.7A HK1222892A1 (zh) | 2014-01-14 | 2016-09-20 | 選擇性金屬/金屬氧化物刻蝕方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US10297465B2 (zh) |
JP (1) | JP6258512B2 (zh) |
KR (1) | KR101822831B1 (zh) |
CN (1) | CN105899713B (zh) |
DE (1) | DE112015000396B4 (zh) |
GB (1) | GB2537549B (zh) |
HK (1) | HK1222892A1 (zh) |
TW (1) | TWI640654B (zh) |
WO (1) | WO2015108842A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6402725B2 (ja) * | 2014-02-17 | 2018-10-10 | 三菱瓦斯化学株式会社 | インジウムと亜鉛とスズおよび酸素からなる酸化物のエッチング用液体組成物およびエッチング方法 |
TWI808965B (zh) * | 2017-03-31 | 2023-07-21 | 日商關東化學股份有限公司 | 鈦層或含鈦層的蝕刻液組成物以及蝕刻方法 |
CN111834216B (zh) * | 2019-04-15 | 2022-07-15 | 中国科学院物理研究所 | 一种制备纳米尺寸金属薄膜图形的方法 |
US20240133016A1 (en) * | 2021-02-24 | 2024-04-25 | Imec Vzw | A method for etching molybdenum |
WO2023239837A1 (en) * | 2022-06-08 | 2023-12-14 | Entegris, Inc. | Cleaning composition with molybdenum etching inhibitor |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393386A (en) * | 1992-12-28 | 1995-02-28 | Mitsubishi Gas Chemical Company, Inc. | Method for preparing aqueous quaternary ammonium hydroxide solution |
JP2001284450A (ja) * | 2000-04-03 | 2001-10-12 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
JP5024048B2 (ja) * | 2005-11-18 | 2012-09-12 | 三菱瓦斯化学株式会社 | ウエットエッチング方法及びウエットエッチング装置 |
KR20100098409A (ko) * | 2007-11-22 | 2010-09-06 | 간또 가가꾸 가부시끼가이샤 | 에칭액 조성물 |
US8110508B2 (en) * | 2007-11-22 | 2012-02-07 | Samsung Electronics Co., Ltd. | Method of forming a bump structure using an etching composition for an under bump metallurgy layer |
CN101903988B (zh) * | 2007-12-21 | 2013-07-31 | 和光纯药工业株式会社 | 蚀刻剂、蚀刻方法及蚀刻剂制备液 |
KR101213707B1 (ko) * | 2008-07-08 | 2012-12-18 | 엘지디스플레이 주식회사 | 폴리실리콘 박막트랜지스터 및 그 제조방법 |
JP2010232486A (ja) * | 2009-03-27 | 2010-10-14 | Nagase Chemtex Corp | エッチング用組成物 |
WO2011093445A1 (ja) * | 2010-01-28 | 2011-08-04 | 三菱瓦斯化学株式会社 | 銅/チタン系多層薄膜用エッチング液 |
US9365770B2 (en) * | 2011-07-26 | 2016-06-14 | Mitsubishi Gas Chemical Company, Inc. | Etching solution for copper/molybdenum-based multilayer thin film |
CN104685635B (zh) * | 2012-10-01 | 2017-05-17 | 夏普株式会社 | 半导体装置 |
-
2015
- 2015-01-13 WO PCT/US2015/011130 patent/WO2015108842A1/en active Application Filing
- 2015-01-13 JP JP2016546525A patent/JP6258512B2/ja active Active
- 2015-01-13 KR KR1020167020834A patent/KR101822831B1/ko active IP Right Grant
- 2015-01-13 GB GB1611892.9A patent/GB2537549B/en active Active
- 2015-01-13 US US15/108,945 patent/US10297465B2/en active Active
- 2015-01-13 DE DE112015000396.7T patent/DE112015000396B4/de active Active
- 2015-01-13 CN CN201580004409.3A patent/CN105899713B/zh active Active
- 2015-01-14 TW TW104101165A patent/TWI640654B/zh active
-
2016
- 2016-09-20 HK HK16111034.7A patent/HK1222892A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2017505990A (ja) | 2017-02-23 |
TWI640654B (zh) | 2018-11-11 |
KR20160105478A (ko) | 2016-09-06 |
GB2537549B (en) | 2021-06-16 |
GB2537549A (en) | 2016-10-19 |
GB201611892D0 (en) | 2016-08-24 |
KR101822831B1 (ko) | 2018-01-29 |
TW201534764A (zh) | 2015-09-16 |
CN105899713B (zh) | 2018-01-12 |
CN105899713A (zh) | 2016-08-24 |
JP6258512B2 (ja) | 2018-01-10 |
US20160322236A1 (en) | 2016-11-03 |
US10297465B2 (en) | 2019-05-21 |
DE112015000396T5 (de) | 2016-09-22 |
WO2015108842A1 (en) | 2015-07-23 |
DE112015000396B4 (de) | 2020-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201610659YA (en) | Etching Method | |
SG10201604315QA (en) | Etching Method | |
SG10201502438RA (en) | Method to etch non-volatile metal materials | |
HK1245420A1 (zh) | 基板處理方法 | |
ZA201902113B (en) | Metal recovery process | |
GB201500989D0 (en) | Process | |
SG11201703122PA (en) | Plasma etching method | |
GB201502894D0 (en) | Process | |
GB201502893D0 (en) | Process | |
GB201506572D0 (en) | Process | |
GB201501952D0 (en) | Process | |
GB201505311D0 (en) | Process | |
SG10201610489WA (en) | Etching method | |
HK1222892A1 (zh) | 選擇性金屬/金屬氧化物刻蝕方法 | |
SG10201603608RA (en) | Residue free oxide etch | |
SG10201604313XA (en) | Etching Method | |
GB201507170D0 (en) | Process | |
GB201503635D0 (en) | Process | |
GB201501953D0 (en) | Process | |
GB201500990D0 (en) | Process | |
SG10201510131WA (en) | Plasma Etching Method | |
GB201504948D0 (en) | Process | |
GB201502814D0 (en) | Process | |
SG10201510383WA (en) | Plasma Etching Method | |
HK1245855A1 (zh) | 金屬氧化膜的成膜方法 |