SG10201603205TA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10201603205TA
SG10201603205TA SG10201603205TA SG10201603205TA SG10201603205TA SG 10201603205T A SG10201603205T A SG 10201603205TA SG 10201603205T A SG10201603205T A SG 10201603205TA SG 10201603205T A SG10201603205T A SG 10201603205TA SG 10201603205T A SG10201603205T A SG 10201603205TA
Authority
SG
Singapore
Prior art keywords
processing method
wafer processing
wafer
processing
Prior art date
Application number
SG10201603205TA
Other languages
English (en)
Inventor
Ogawa Yuki
Nagaoka Kensuke
Obata Tsubasa
Ban Yuri
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201603205TA publication Critical patent/SG10201603205TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
SG10201603205TA 2015-05-19 2016-04-22 Wafer processing method SG10201603205TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015101599A JP6478801B2 (ja) 2015-05-19 2015-05-19 ウエーハの加工方法

Publications (1)

Publication Number Publication Date
SG10201603205TA true SG10201603205TA (en) 2016-12-29

Family

ID=57231806

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201603205TA SG10201603205TA (en) 2015-05-19 2016-04-22 Wafer processing method

Country Status (7)

Country Link
US (1) US9716039B2 (de)
JP (1) JP6478801B2 (de)
KR (1) KR102447146B1 (de)
CN (1) CN106169442A (de)
DE (1) DE102016208307A1 (de)
SG (1) SG10201603205TA (de)
TW (1) TWI679693B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7032050B2 (ja) * 2017-03-14 2022-03-08 株式会社ディスコ レーザー加工装置
JP6824582B2 (ja) * 2017-04-04 2021-02-03 株式会社ディスコ 加工方法
JP6912267B2 (ja) * 2017-05-09 2021-08-04 株式会社ディスコ レーザ加工方法
JP6858455B2 (ja) * 2017-07-24 2021-04-14 株式会社ディスコ チップの製造方法
JP6830739B2 (ja) * 2017-08-22 2021-02-17 株式会社ディスコ チップの製造方法
JP7015139B2 (ja) * 2017-10-18 2022-02-02 株式会社ディスコ 被加工物の研削方法及び研削装置
JP6955975B2 (ja) * 2017-11-21 2021-10-27 株式会社ディスコ ウェーハの加工方法
JP7062449B2 (ja) * 2018-01-23 2022-05-06 株式会社ディスコ 被加工物の切削方法
JP7013276B2 (ja) * 2018-02-23 2022-01-31 株式会社ディスコ 加工装置
JP7068028B2 (ja) 2018-05-09 2022-05-16 株式会社ディスコ ウェーハの分割方法
JP7061021B2 (ja) * 2018-06-06 2022-04-27 株式会社ディスコ ウェーハの加工方法及び研削装置
JP7191563B2 (ja) * 2018-07-03 2022-12-19 株式会社ディスコ ウエーハの加工方法
JP2020017677A (ja) * 2018-07-26 2020-01-30 株式会社ディスコ ウェーハの加工方法
CN109176928A (zh) * 2018-09-14 2019-01-11 苏州迈为科技股份有限公司 一种电池片划片装置及划片方法
DE102019201438B4 (de) * 2019-02-05 2024-05-02 Disco Corporation Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats
JP7323304B2 (ja) * 2019-03-07 2023-08-08 株式会社ディスコ 被加工物の分割方法
US11289378B2 (en) * 2019-06-13 2022-03-29 Wolfspeed, Inc. Methods for dicing semiconductor wafers and semiconductor devices made by the methods
US20210202318A1 (en) * 2019-12-27 2021-07-01 Micron Technology, Inc. Methods of forming semiconductor dies with perimeter profiles for stacked die packages
US11901232B2 (en) * 2020-06-22 2024-02-13 Applied Materials, Inc. Automatic kerf offset mapping and correction system for laser dicing

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6336988A (ja) * 1986-07-29 1988-02-17 Rohm Co Ltd 半導体ウエハの分割方法
JPH06224298A (ja) * 1993-01-26 1994-08-12 Sony Corp ダイシング方法
JP2005064231A (ja) 2003-08-12 2005-03-10 Disco Abrasive Syst Ltd 板状物の分割方法
US7129114B2 (en) * 2004-03-10 2006-10-31 Micron Technology, Inc. Methods relating to singulating semiconductor wafers and wafer scale assemblies
JP2006073690A (ja) * 2004-09-01 2006-03-16 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2006140341A (ja) * 2004-11-12 2006-06-01 Disco Abrasive Syst Ltd ウエーハの分割方法
JP4734903B2 (ja) * 2004-11-29 2011-07-27 株式会社デンソー 半導体ウェハのダイシング方法
JP4630689B2 (ja) * 2005-03-01 2011-02-09 株式会社ディスコ ウエーハの分割方法
JP2008091779A (ja) * 2006-10-04 2008-04-17 Sanyo Electric Co Ltd 半導体装置の製造方法
JP5054496B2 (ja) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 加工対象物切断方法
JP2009272421A (ja) * 2008-05-07 2009-11-19 Disco Abrasive Syst Ltd デバイスの製造方法
US8043940B2 (en) * 2008-06-02 2011-10-25 Renesas Electronics Corporation Method for manufacturing semiconductor chip and semiconductor device
JP5122378B2 (ja) * 2008-06-09 2013-01-16 株式会社ディスコ 板状物の分割方法
JP5964580B2 (ja) * 2011-12-26 2016-08-03 株式会社ディスコ ウェーハの加工方法
JP6078272B2 (ja) * 2012-09-10 2017-02-08 株式会社ディスコ ウエーハの加工方法
JP6078376B2 (ja) * 2013-02-22 2017-02-08 株式会社ディスコ ウエーハの加工方法

Also Published As

Publication number Publication date
KR20160136232A (ko) 2016-11-29
TW201642336A (zh) 2016-12-01
JP2016219564A (ja) 2016-12-22
KR102447146B1 (ko) 2022-09-23
US9716039B2 (en) 2017-07-25
US20160343614A1 (en) 2016-11-24
DE102016208307A1 (de) 2016-11-24
TWI679693B (zh) 2019-12-11
CN106169442A (zh) 2016-11-30
JP6478801B2 (ja) 2019-03-06

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