SG10201602443QA - Halftone Phase Shift Mask Blank And Halftone Phase Shift Mask - Google Patents
Halftone Phase Shift Mask Blank And Halftone Phase Shift MaskInfo
- Publication number
- SG10201602443QA SG10201602443QA SG10201602443QA SG10201602443QA SG10201602443QA SG 10201602443Q A SG10201602443Q A SG 10201602443QA SG 10201602443Q A SG10201602443Q A SG 10201602443QA SG 10201602443Q A SG10201602443Q A SG 10201602443QA SG 10201602443Q A SG10201602443Q A SG 10201602443QA
- Authority
- SG
- Singapore
- Prior art keywords
- phase shift
- shift mask
- halftone phase
- mask blank
- blank
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01007—Nitrogen [N]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01008—Oxygen [O]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015072658A JP6341129B2 (ja) | 2015-03-31 | 2015-03-31 | ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201602443QA true SG10201602443QA (en) | 2016-10-28 |
Family
ID=55699368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201602443QA SG10201602443QA (en) | 2015-03-31 | 2016-03-29 | Halftone Phase Shift Mask Blank And Halftone Phase Shift Mask |
Country Status (7)
Country | Link |
---|---|
US (1) | US10372030B2 (ko) |
EP (1) | EP3079012B1 (ko) |
JP (1) | JP6341129B2 (ko) |
KR (1) | KR102217760B1 (ko) |
CN (1) | CN106019810B (ko) |
SG (1) | SG10201602443QA (ko) |
TW (1) | TWI684059B (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018020913A1 (ja) * | 2016-07-25 | 2018-02-01 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法及び半導体デバイスの製造方法 |
JP6733464B2 (ja) * | 2016-09-28 | 2020-07-29 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク |
JP6740107B2 (ja) | 2016-11-30 | 2020-08-12 | Hoya株式会社 | マスクブランク、転写用マスク及び半導体デバイスの製造方法 |
JP6900872B2 (ja) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
JP6900873B2 (ja) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
JP6432636B2 (ja) * | 2017-04-03 | 2018-12-05 | 凸版印刷株式会社 | フォトマスクブランク、フォトマスク及びフォトマスクの製造方法 |
CN111344633B (zh) * | 2017-11-24 | 2023-02-03 | Hoya株式会社 | 掩模坯料、相移掩模及制造方法、半导体器件的制造方法 |
US20200379338A1 (en) * | 2017-12-26 | 2020-12-03 | Hoya Corporation | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
US20210026235A1 (en) * | 2018-03-26 | 2021-01-28 | Hoya Corporation | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
JP6927177B2 (ja) * | 2018-09-26 | 2021-08-25 | 信越化学工業株式会社 | 位相シフト型フォトマスクブランク及び位相シフト型フォトマスク |
JP7264083B2 (ja) * | 2019-03-29 | 2023-04-25 | 信越化学工業株式会社 | 位相シフトマスクブランクス、その製造方法及び位相シフトマスク |
JP7192731B2 (ja) * | 2019-09-27 | 2022-12-20 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク、その製造方法、及びハーフトーン位相シフト型フォトマスク |
JP6987912B2 (ja) * | 2020-03-16 | 2022-01-05 | アルバック成膜株式会社 | マスクブランクス、位相シフトマスク、製造方法 |
JP7033638B2 (ja) * | 2020-12-09 | 2022-03-10 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
KR102349367B1 (ko) * | 2020-12-31 | 2022-01-07 | 에스케이씨솔믹스 주식회사 | 반도체 소자 제조 장치 |
KR102349368B1 (ko) * | 2021-02-25 | 2022-01-07 | 에스케이씨솔믹스 주식회사 | 반도체 소자 제조 장치 |
KR102368448B1 (ko) * | 2021-02-10 | 2022-02-25 | 에스케이씨솔믹스 주식회사 | 반도체 소자 제조 장치 |
KR102400199B1 (ko) * | 2020-12-31 | 2022-05-18 | 에스케이씨솔믹스 주식회사 | 반도체 소자 제조 장치 |
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DE3128148A1 (de) * | 1981-07-16 | 1983-02-03 | Basf Ag, 6700 Ludwigshafen | N-acylcyclopropylamine, verfahren zu ihrer herstellung und diese verbindungen enthaltende mittel zur regulierung des pflanzenwachstum |
JP3247485B2 (ja) * | 1992-07-08 | 2002-01-15 | 株式会社東芝 | 露光用マスク及びその製造方法 |
JP3064769B2 (ja) | 1992-11-21 | 2000-07-12 | アルバック成膜株式会社 | 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法 |
US5823655A (en) * | 1996-01-16 | 1998-10-20 | Brooks; I. Morris | Inconspicuous modular decorative lighting apparatus |
US6045954A (en) * | 1998-06-12 | 2000-04-04 | Industrial Technology Research Institute | Formation of silicon nitride film for a phase shift mask at 193 nm |
JP2002258458A (ja) * | 2000-12-26 | 2002-09-11 | Hoya Corp | ハーフトーン型位相シフトマスク及びマスクブランク |
JP4332697B2 (ja) * | 2002-01-10 | 2009-09-16 | 信越化学工業株式会社 | スパッタターゲット |
JP3988041B2 (ja) * | 2002-10-08 | 2007-10-10 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びその製造方法 |
DE602006021102D1 (de) | 2005-07-21 | 2011-05-19 | Shinetsu Chemical Co | Photomaskenrohling, Photomaske und deren Herstellungsverfahren |
JP4933753B2 (ja) | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法 |
JP4551344B2 (ja) | 2006-03-02 | 2010-09-29 | 信越化学工業株式会社 | フォトマスクブランクおよびフォトマスク |
JP4764214B2 (ja) * | 2006-03-10 | 2011-08-31 | 凸版印刷株式会社 | ハーフトーン型位相シフトマスク及びその製造方法 |
JP4509050B2 (ja) | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
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JP4714180B2 (ja) | 2007-05-01 | 2011-06-29 | 株式会社東芝 | フォトマスク管理方法、フォトマスク洗浄可能回数生成方法、及びフォトマスク管理システム |
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US20130030959A1 (en) * | 2011-07-26 | 2013-01-31 | Jason Gray | Real Time Online Searching |
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JP5739375B2 (ja) * | 2012-05-16 | 2015-06-24 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法 |
JP2012212180A (ja) * | 2012-07-24 | 2012-11-01 | Shin Etsu Chem Co Ltd | 欠陥の低減方法 |
CN110673435B (zh) | 2013-01-15 | 2023-04-21 | Hoya株式会社 | 掩膜板坯料、相移掩膜板及半导体器件的制造方法 |
JP6005530B2 (ja) | 2013-01-15 | 2016-10-12 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびこれらの製造方法 |
JP5686216B1 (ja) * | 2013-08-20 | 2015-03-18 | 大日本印刷株式会社 | マスクブランクス、位相シフトマスク及びその製造方法 |
TWI545390B (zh) * | 2013-08-21 | 2016-08-11 | 大日本印刷股份有限公司 | 遮罩毛胚、附有負型阻劑膜之遮罩毛胚、相位移遮罩及使用其之圖案形成體之製造方法 |
JP6264238B2 (ja) * | 2013-11-06 | 2018-01-24 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法 |
TW201537281A (zh) * | 2014-03-18 | 2015-10-01 | Hoya Corp | 光罩基底、相偏移光罩及半導體裝置之製造方法 |
JP6524614B2 (ja) * | 2014-05-27 | 2019-06-05 | 大日本印刷株式会社 | マスクブランクス、ネガ型レジスト膜付きマスクブランクス、位相シフトマスク、およびそれを用いるパターン形成体の製造方法 |
-
2015
- 2015-03-31 JP JP2015072658A patent/JP6341129B2/ja active Active
-
2016
- 2016-03-18 EP EP16161049.8A patent/EP3079012B1/en active Active
- 2016-03-22 US US15/077,258 patent/US10372030B2/en active Active
- 2016-03-28 KR KR1020160036694A patent/KR102217760B1/ko active IP Right Grant
- 2016-03-29 SG SG10201602443QA patent/SG10201602443QA/en unknown
- 2016-03-30 TW TW105110128A patent/TWI684059B/zh active
- 2016-03-31 CN CN201610195663.2A patent/CN106019810B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP3079012A2 (en) | 2016-10-12 |
JP2016191863A (ja) | 2016-11-10 |
KR102217760B1 (ko) | 2021-02-19 |
TW201702732A (zh) | 2017-01-16 |
CN106019810A (zh) | 2016-10-12 |
KR20160117243A (ko) | 2016-10-10 |
EP3079012B1 (en) | 2021-02-17 |
US20160291452A1 (en) | 2016-10-06 |
JP6341129B2 (ja) | 2018-06-13 |
US10372030B2 (en) | 2019-08-06 |
EP3079012A3 (en) | 2016-12-14 |
TWI684059B (zh) | 2020-02-01 |
CN106019810B (zh) | 2020-12-08 |
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