SG10201404328QA - Post ion implant stripper for advanced semiconductor application - Google Patents

Post ion implant stripper for advanced semiconductor application

Info

Publication number
SG10201404328QA
SG10201404328QA SG10201404328QA SG10201404328QA SG10201404328QA SG 10201404328Q A SG10201404328Q A SG 10201404328QA SG 10201404328Q A SG10201404328Q A SG 10201404328QA SG 10201404328Q A SG10201404328Q A SG 10201404328QA SG 10201404328Q A SG10201404328Q A SG 10201404328QA
Authority
SG
Singapore
Prior art keywords
stripper
ion implant
advanced semiconductor
semiconductor application
post ion
Prior art date
Application number
SG10201404328QA
Other languages
English (en)
Inventor
Chienshin Chen
Meichin Shen
Chiahao Chan
Andreas Klipp
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG10201404328QA publication Critical patent/SG10201404328QA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/37Polymers
    • C11D3/3746Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3757(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
    • C11D3/3765(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG10201404328QA 2009-07-30 2010-07-26 Post ion implant stripper for advanced semiconductor application SG10201404328QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22976009P 2009-07-30 2009-07-30

Publications (1)

Publication Number Publication Date
SG10201404328QA true SG10201404328QA (en) 2014-10-30

Family

ID=43137613

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201404328QA SG10201404328QA (en) 2009-07-30 2010-07-26 Post ion implant stripper for advanced semiconductor application
SG2012005443A SG177755A1 (en) 2009-07-30 2010-07-26 Post ion implant stripper for advanced semiconductor application

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012005443A SG177755A1 (en) 2009-07-30 2010-07-26 Post ion implant stripper for advanced semiconductor application

Country Status (10)

Country Link
US (1) US9484218B2 (ja)
EP (1) EP2460177B1 (ja)
JP (1) JP6165442B2 (ja)
KR (1) KR101746879B1 (ja)
CN (1) CN102473638B (ja)
IL (1) IL217708A (ja)
MY (1) MY185453A (ja)
SG (2) SG10201404328QA (ja)
TW (1) TWI594088B (ja)
WO (1) WO2011012559A2 (ja)

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US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
KR101934687B1 (ko) 2011-03-18 2019-03-18 바스프 에스이 50 ㎚ 이하의 라인 스페이스 치수들을 갖는 패터닝된 재료 층들을 가진 집적 회로 디바이스들, 광학 디바이스들, 마이크로머신들 및 기계 정밀 디바이스들의 제조 방법
WO2013081880A1 (en) * 2011-11-29 2013-06-06 U.S. Coatings Ip Co. Llc Non-aqueous solvent composition and its use as barrier liquid
CN104169801B (zh) 2012-03-16 2019-12-17 巴斯夫欧洲公司 光致抗蚀剂剥离和清洁组合物、其制备方法及其用途
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP6233779B2 (ja) 2013-11-18 2017-11-22 富士フイルム株式会社 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法
JP2015118125A (ja) * 2013-11-18 2015-06-25 富士フイルム株式会社 変性レジストの剥離液、これを用いた変性レジストの剥離方法および半導体基板製品の製造方法
WO2015096068A1 (zh) 2013-12-25 2015-07-02 华为海洋网络有限公司 一种光分插复用光分支器
US20150219996A1 (en) * 2014-02-06 2015-08-06 Dynaloy, Llc Composition for removing substances from substrates
WO2016084860A1 (ja) * 2014-11-27 2016-06-02 富士フイルム株式会社 除去液、これを用いた除去方法および半導体基板製品の製造方法
KR101850192B1 (ko) * 2015-12-02 2018-04-19 연세대학교 산학협력단 유기용매를 이용한 포토레지스트 제거방법
JP6536464B2 (ja) * 2016-04-26 2019-07-03 信越化学工業株式会社 洗浄剤組成物及び薄型基板の製造方法
TWI729125B (zh) 2016-05-10 2021-06-01 德商德國艾托特克公司 非水性剝離組合物及自基材剝離有機塗層之方法
EP3752887B1 (en) * 2018-02-14 2022-04-13 Merck Patent GmbH Photoresist remover compositions
CN112752746B (zh) 2018-09-28 2023-07-28 株式会社德山 氢氧化季铵的有机溶剂溶液的制造方法
CN116285995A (zh) * 2021-12-20 2023-06-23 李长荣化学工业股份有限公司 用于移除硅的蚀刻组成物及使用其移除硅的方法
JP2023107076A (ja) 2022-01-21 2023-08-02 関東化学株式会社 フォトレジスト剥離組成物

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US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
US5811358A (en) 1997-01-03 1998-09-22 Mosel Vitelic Inc. Low temperature dry process for stripping photoresist after high dose ion implantation
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JP4678673B2 (ja) * 2005-05-12 2011-04-27 東京応化工業株式会社 ホトレジスト用剥離液
JP2009516360A (ja) * 2005-10-13 2009-04-16 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 金属適合フォトレジスト及び/又は犠牲反射防止コーティング除去組成物
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
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Also Published As

Publication number Publication date
KR101746879B1 (ko) 2017-06-14
CN102473638B (zh) 2015-02-18
IL217708A0 (en) 2012-03-29
JP2013500503A (ja) 2013-01-07
IL217708A (en) 2017-07-31
KR20120041777A (ko) 2012-05-02
EP2460177A2 (en) 2012-06-06
EP2460177B1 (en) 2016-03-23
TW201128327A (en) 2011-08-16
WO2011012559A3 (en) 2011-03-24
CN102473638A (zh) 2012-05-23
RU2012107135A (ru) 2013-09-10
JP6165442B2 (ja) 2017-07-19
SG177755A1 (en) 2012-03-29
US20120129747A1 (en) 2012-05-24
US9484218B2 (en) 2016-11-01
MY185453A (en) 2021-05-19
WO2011012559A2 (en) 2011-02-03
TWI594088B (zh) 2017-08-01

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