SG10201404328QA - Post ion implant stripper for advanced semiconductor application - Google Patents
Post ion implant stripper for advanced semiconductor applicationInfo
- Publication number
- SG10201404328QA SG10201404328QA SG10201404328QA SG10201404328QA SG10201404328QA SG 10201404328Q A SG10201404328Q A SG 10201404328QA SG 10201404328Q A SG10201404328Q A SG 10201404328QA SG 10201404328Q A SG10201404328Q A SG 10201404328QA SG 10201404328Q A SG10201404328Q A SG 10201404328QA
- Authority
- SG
- Singapore
- Prior art keywords
- stripper
- ion implant
- advanced semiconductor
- semiconductor application
- post ion
- Prior art date
Links
- 239000007943 implant Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22976009P | 2009-07-30 | 2009-07-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201404328QA true SG10201404328QA (en) | 2014-10-30 |
Family
ID=43137613
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201404328QA SG10201404328QA (en) | 2009-07-30 | 2010-07-26 | Post ion implant stripper for advanced semiconductor application |
SG2012005443A SG177755A1 (en) | 2009-07-30 | 2010-07-26 | Post ion implant stripper for advanced semiconductor application |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012005443A SG177755A1 (en) | 2009-07-30 | 2010-07-26 | Post ion implant stripper for advanced semiconductor application |
Country Status (10)
Country | Link |
---|---|
US (1) | US9484218B2 (ja) |
EP (1) | EP2460177B1 (ja) |
JP (1) | JP6165442B2 (ja) |
KR (1) | KR101746879B1 (ja) |
CN (1) | CN102473638B (ja) |
IL (1) | IL217708A (ja) |
MY (1) | MY185453A (ja) |
SG (2) | SG10201404328QA (ja) |
TW (1) | TWI594088B (ja) |
WO (1) | WO2011012559A2 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
KR101934687B1 (ko) | 2011-03-18 | 2019-03-18 | 바스프 에스이 | 50 ㎚ 이하의 라인 스페이스 치수들을 갖는 패터닝된 재료 층들을 가진 집적 회로 디바이스들, 광학 디바이스들, 마이크로머신들 및 기계 정밀 디바이스들의 제조 방법 |
WO2013081880A1 (en) * | 2011-11-29 | 2013-06-06 | U.S. Coatings Ip Co. Llc | Non-aqueous solvent composition and its use as barrier liquid |
CN104169801B (zh) | 2012-03-16 | 2019-12-17 | 巴斯夫欧洲公司 | 光致抗蚀剂剥离和清洁组合物、其制备方法及其用途 |
US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
JP6233779B2 (ja) | 2013-11-18 | 2017-11-22 | 富士フイルム株式会社 | 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法 |
JP2015118125A (ja) * | 2013-11-18 | 2015-06-25 | 富士フイルム株式会社 | 変性レジストの剥離液、これを用いた変性レジストの剥離方法および半導体基板製品の製造方法 |
WO2015096068A1 (zh) | 2013-12-25 | 2015-07-02 | 华为海洋网络有限公司 | 一种光分插复用光分支器 |
US20150219996A1 (en) * | 2014-02-06 | 2015-08-06 | Dynaloy, Llc | Composition for removing substances from substrates |
WO2016084860A1 (ja) * | 2014-11-27 | 2016-06-02 | 富士フイルム株式会社 | 除去液、これを用いた除去方法および半導体基板製品の製造方法 |
KR101850192B1 (ko) * | 2015-12-02 | 2018-04-19 | 연세대학교 산학협력단 | 유기용매를 이용한 포토레지스트 제거방법 |
JP6536464B2 (ja) * | 2016-04-26 | 2019-07-03 | 信越化学工業株式会社 | 洗浄剤組成物及び薄型基板の製造方法 |
TWI729125B (zh) | 2016-05-10 | 2021-06-01 | 德商德國艾托特克公司 | 非水性剝離組合物及自基材剝離有機塗層之方法 |
EP3752887B1 (en) * | 2018-02-14 | 2022-04-13 | Merck Patent GmbH | Photoresist remover compositions |
CN112752746B (zh) | 2018-09-28 | 2023-07-28 | 株式会社德山 | 氢氧化季铵的有机溶剂溶液的制造方法 |
CN116285995A (zh) * | 2021-12-20 | 2023-06-23 | 李长荣化学工业股份有限公司 | 用于移除硅的蚀刻组成物及使用其移除硅的方法 |
JP2023107076A (ja) | 2022-01-21 | 2023-08-02 | 関東化学株式会社 | フォトレジスト剥離組成物 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5091103A (en) * | 1990-05-01 | 1992-02-25 | Alicia Dean | Photoresist stripper |
US6825156B2 (en) * | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
US5612304A (en) * | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
US5811358A (en) | 1997-01-03 | 1998-09-22 | Mosel Vitelic Inc. | Low temperature dry process for stripping photoresist after high dose ion implantation |
JPH1184686A (ja) * | 1997-09-01 | 1999-03-26 | Mitsubishi Gas Chem Co Inc | レジスト剥離剤組成物 |
US7135445B2 (en) * | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
US6417112B1 (en) * | 1998-07-06 | 2002-07-09 | Ekc Technology, Inc. | Post etch cleaning composition and process for dual damascene system |
KR100288769B1 (ko) * | 1998-07-10 | 2001-09-17 | 윤종용 | 포토레지스트용스트리퍼조성물 |
US6368421B1 (en) * | 1998-07-10 | 2002-04-09 | Clariant Finance (Bvi) Limited | Composition for stripping photoresist and organic materials from substrate surfaces |
JP2001215736A (ja) * | 2000-02-04 | 2001-08-10 | Jsr Corp | フォトレジスト用剥離液組成物、剥離方法及び回路基板 |
JP3738996B2 (ja) | 2002-10-10 | 2006-01-25 | 東京応化工業株式会社 | ホトリソグラフィー用洗浄液および基板の処理方法 |
US6524936B2 (en) | 2000-12-22 | 2003-02-25 | Axcelis Technologies, Inc. | Process for removal of photoresist after post ion implantation |
CN1238770C (zh) * | 2001-05-21 | 2006-01-25 | 东进瑟弥侃株式会社 | 抗蚀剂剥离剂组合物 |
JP2002357908A (ja) | 2001-05-31 | 2002-12-13 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト用剥離液 |
KR20040032855A (ko) * | 2001-07-13 | 2004-04-17 | 이케이씨 테크놀로지, 인코포레이티드 | 술폭시드 피롤리드(인)온 알칸올아민 박리 및 세정 조성물 |
US6551973B1 (en) * | 2001-10-09 | 2003-04-22 | General Chemical Corporation | Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue |
US20030148624A1 (en) | 2002-01-31 | 2003-08-07 | Kazuto Ikemoto | Method for removing resists |
JP2003228179A (ja) * | 2002-01-31 | 2003-08-15 | Mitsubishi Gas Chem Co Inc | 銅配線基板向けアミン含有レジスト剥離液および剥離方法 |
JP4045408B2 (ja) * | 2002-01-31 | 2008-02-13 | 三菱瓦斯化学株式会社 | 銅配線基板向け洗浄液およびこれを使用したレジスト剥離方法 |
US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
JP2004117889A (ja) | 2002-09-26 | 2004-04-15 | Jsr Corp | フォトレジスト用剥離液組成物 |
US20050089489A1 (en) * | 2003-10-22 | 2005-04-28 | Carter Melvin K. | Composition for exfoliation agent effective in removing resist residues |
WO2006113222A2 (en) * | 2005-04-15 | 2006-10-26 | Advanced Technology Materials, Inc. | Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems |
WO2006113621A2 (en) * | 2005-04-15 | 2006-10-26 | Advanced Technology Materials, Inc. | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
JP4678673B2 (ja) * | 2005-05-12 | 2011-04-27 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
JP2009516360A (ja) * | 2005-10-13 | 2009-04-16 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 金属適合フォトレジスト及び/又は犠牲反射防止コーティング除去組成物 |
US8263539B2 (en) * | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
KR20100076999A (ko) | 2007-10-31 | 2010-07-06 | 이케이씨 테크놀로지, 인코포레이티드 | 포토레지스트 박리를 위한 화합물 |
WO2010127941A1 (en) * | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
-
2010
- 2010-07-26 MY MYPI2012000352A patent/MY185453A/en unknown
- 2010-07-26 WO PCT/EP2010/060762 patent/WO2011012559A2/en active Application Filing
- 2010-07-26 US US13/387,787 patent/US9484218B2/en active Active
- 2010-07-26 EP EP10736715.3A patent/EP2460177B1/en active Active
- 2010-07-26 JP JP2012522125A patent/JP6165442B2/ja not_active Expired - Fee Related
- 2010-07-26 KR KR1020127005545A patent/KR101746879B1/ko active IP Right Grant
- 2010-07-26 CN CN201080033645.5A patent/CN102473638B/zh active Active
- 2010-07-26 SG SG10201404328QA patent/SG10201404328QA/en unknown
- 2010-07-26 SG SG2012005443A patent/SG177755A1/en unknown
- 2010-07-29 TW TW099125180A patent/TWI594088B/zh active
-
2012
- 2012-01-24 IL IL217708A patent/IL217708A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR101746879B1 (ko) | 2017-06-14 |
CN102473638B (zh) | 2015-02-18 |
IL217708A0 (en) | 2012-03-29 |
JP2013500503A (ja) | 2013-01-07 |
IL217708A (en) | 2017-07-31 |
KR20120041777A (ko) | 2012-05-02 |
EP2460177A2 (en) | 2012-06-06 |
EP2460177B1 (en) | 2016-03-23 |
TW201128327A (en) | 2011-08-16 |
WO2011012559A3 (en) | 2011-03-24 |
CN102473638A (zh) | 2012-05-23 |
RU2012107135A (ru) | 2013-09-10 |
JP6165442B2 (ja) | 2017-07-19 |
SG177755A1 (en) | 2012-03-29 |
US20120129747A1 (en) | 2012-05-24 |
US9484218B2 (en) | 2016-11-01 |
MY185453A (en) | 2021-05-19 |
WO2011012559A2 (en) | 2011-02-03 |
TWI594088B (zh) | 2017-08-01 |
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