HK1158823A1 - Semiconductor die singulation method - Google Patents

Semiconductor die singulation method

Info

Publication number
HK1158823A1
HK1158823A1 HK11113159.7A HK11113159A HK1158823A1 HK 1158823 A1 HK1158823 A1 HK 1158823A1 HK 11113159 A HK11113159 A HK 11113159A HK 1158823 A1 HK1158823 A1 HK 1158823A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor die
die singulation
singulation method
semiconductor
singulation
Prior art date
Application number
HK11113159.7A
Other languages
Chinese (zh)
Inventor
．格裡瓦納
．塞登
Original Assignee
半導體元件工業有限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/689,098 external-priority patent/US7989319B2/en
Application filed by 半導體元件工業有限責任公司 filed Critical 半導體元件工業有限責任公司
Publication of HK1158823A1 publication Critical patent/HK1158823A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
HK11113159.7A 2010-01-18 2011-12-06 Semiconductor die singulation method HK1158823A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/689,098 US7989319B2 (en) 2007-08-07 2010-01-18 Semiconductor die singulation method

Publications (1)

Publication Number Publication Date
HK1158823A1 true HK1158823A1 (en) 2012-07-20

Family

ID=44268067

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11113159.7A HK1158823A1 (en) 2010-01-18 2011-12-06 Semiconductor die singulation method

Country Status (4)

Country Link
KR (4) KR101751709B1 (en)
CN (1) CN102130047B (en)
HK (1) HK1158823A1 (en)
TW (2) TWI512897B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8664089B1 (en) * 2012-08-20 2014-03-04 Semiconductor Components Industries, Llc Semiconductor die singulation method
US9136173B2 (en) * 2012-11-07 2015-09-15 Semiconductor Components Industries, Llc Singulation method for semiconductor die having a layer of material along one major surface
US9214423B2 (en) * 2013-03-15 2015-12-15 Semiconductor Components Industries, Llc Method of forming a HEMT semiconductor device and structure therefor
TWI671813B (en) * 2013-11-13 2019-09-11 東芝股份有限公司 Semiconductor wafer manufacturing method
JP6441025B2 (en) 2013-11-13 2018-12-19 株式会社東芝 Manufacturing method of semiconductor chip
US20150255349A1 (en) * 2014-03-07 2015-09-10 JAMES Matthew HOLDEN Approaches for cleaning a wafer during hybrid laser scribing and plasma etching wafer dicing processes
JP6738591B2 (en) * 2015-03-13 2020-08-12 古河電気工業株式会社 Semiconductor wafer processing method, semiconductor chip, and surface protection tape
JP6637831B2 (en) * 2016-04-28 2020-01-29 株式会社ディスコ Device manufacturing method and grinding device
US11322464B2 (en) * 2019-10-01 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Film structure for bond pad

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5300461A (en) * 1993-01-25 1994-04-05 Intel Corporation Process for fabricating sealed semiconductor chip using silicon nitride passivation film
US5851928A (en) * 1995-11-27 1998-12-22 Motorola, Inc. Method of etching a semiconductor substrate
US7553700B2 (en) * 2004-05-11 2009-06-30 Gem Services, Inc. Chemical-enhanced package singulation process
DE102005039479B3 (en) * 2005-08-18 2007-03-29 Infineon Technologies Ag Semiconductor device with thinned semiconductor chip and method for producing the thinned semiconductor device
JP2007294612A (en) * 2006-04-24 2007-11-08 Oki Data Corp Semiconductor device, manufacturing method thereof, semiconductor manufacturing apparatus, led head, and image forming apparatus
US7482251B1 (en) * 2006-08-10 2009-01-27 Impinj, Inc. Etch before grind for semiconductor die singulation
TWI330868B (en) * 2007-04-13 2010-09-21 Siliconware Precision Industries Co Ltd Semiconductor device and manufacturing method thereof
US7585750B2 (en) * 2007-05-04 2009-09-08 Stats Chippac, Ltd. Semiconductor package having through-hole via on saw streets formed with partial saw
US7989319B2 (en) 2007-08-07 2011-08-02 Semiconductor Components Industries, Llc Semiconductor die singulation method
US7781310B2 (en) * 2007-08-07 2010-08-24 Semiconductor Components Industries, Llc Semiconductor die singulation method

Also Published As

Publication number Publication date
KR20190032319A (en) 2019-03-27
KR20170075702A (en) 2017-07-03
KR20200011519A (en) 2020-02-03
TW201603194A (en) 2016-01-16
CN102130047B (en) 2014-12-17
KR101751709B1 (en) 2017-06-28
CN102130047A (en) 2011-07-20
KR20110084828A (en) 2011-07-26
TWI601242B (en) 2017-10-01
TW201126648A (en) 2011-08-01
TWI512897B (en) 2015-12-11

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20211123