HK1158825A1 - Semiconductor die singulation method - Google Patents
Semiconductor die singulation methodInfo
- Publication number
- HK1158825A1 HK1158825A1 HK11113167.7A HK11113167A HK1158825A1 HK 1158825 A1 HK1158825 A1 HK 1158825A1 HK 11113167 A HK11113167 A HK 11113167A HK 1158825 A1 HK1158825 A1 HK 1158825A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- semiconductor die
- die singulation
- singulation method
- semiconductor
- singulation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element
- H01L21/784—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/689,110 US8012857B2 (en) | 2007-08-07 | 2010-01-18 | Semiconductor die singulation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1158825A1 true HK1158825A1 (en) | 2012-07-20 |
Family
ID=44268068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK11113167.7A HK1158825A1 (en) | 2010-01-18 | 2011-12-06 | Semiconductor die singulation method |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101731805B1 (en) |
| CN (1) | CN102130048B (en) |
| HK (1) | HK1158825A1 (en) |
| TW (1) | TWI505343B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103378128A (en) * | 2012-04-17 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Passivation layer structure, and forming method and etching method thereof |
| EP2908335B1 (en) * | 2014-02-14 | 2020-04-15 | ams AG | Dicing method |
| US10312207B2 (en) | 2017-07-14 | 2019-06-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Passivation scheme for pad openings and trenches |
| FR3131799A1 (en) * | 2022-01-10 | 2023-07-14 | Stmicroelectronics (Crolles 2) Sas | METHOD FOR MANUFACTURING INTEGRATED CIRCUITS FROM A SEMICONDUCTOR SUBSTRATE BOARD |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS648088A (en) * | 1987-06-30 | 1989-01-12 | Kanzaki Paper Mfg Co Ltd | Production of thermal recording material |
| JP3427751B2 (en) * | 1998-10-20 | 2003-07-22 | 株式会社デンソー | Thin processing method of semiconductor chip and etching apparatus for thin processing |
| US6162702A (en) * | 1999-06-17 | 2000-12-19 | Intersil Corporation | Self-supported ultra thin silicon wafer process |
| DE10256985B4 (en) * | 2001-12-12 | 2013-01-10 | Denso Corporation | Method for producing a power semiconductor component |
| JP2006041005A (en) * | 2004-07-23 | 2006-02-09 | Matsushita Electric Ind Co Ltd | Method and equipment for determining arrangement of semiconductor element forming region, program for determining arrangement of the semiconductor element forming region, and method for manufacturing semiconductor element |
| US7335576B2 (en) * | 2004-10-08 | 2008-02-26 | Irvine Sensors Corp. | Method for precision integrated circuit die singulation using differential etch rates |
| JP4275095B2 (en) * | 2005-04-14 | 2009-06-10 | パナソニック株式会社 | Manufacturing method of semiconductor chip |
-
2010
- 2010-11-24 TW TW099140645A patent/TWI505343B/en active
- 2010-11-25 CN CN201010560127.0A patent/CN102130048B/en not_active Expired - Fee Related
-
2011
- 2011-01-13 KR KR1020110003408A patent/KR101731805B1/en active IP Right Grant
- 2011-12-06 HK HK11113167.7A patent/HK1158825A1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN102130048B (en) | 2015-02-11 |
| KR101731805B1 (en) | 2017-05-02 |
| TWI505343B (en) | 2015-10-21 |
| CN102130048A (en) | 2011-07-20 |
| KR20110084829A (en) | 2011-07-26 |
| TW201130027A (en) | 2011-09-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20211123 |