SG10201400611VA - Method For Polishing A Semiconductor Material Wafer - Google Patents
Method For Polishing A Semiconductor Material WaferInfo
- Publication number
- SG10201400611VA SG10201400611VA SG10201400611VA SG10201400611VA SG10201400611VA SG 10201400611V A SG10201400611V A SG 10201400611VA SG 10201400611V A SG10201400611V A SG 10201400611VA SG 10201400611V A SG10201400611V A SG 10201400611VA SG 10201400611V A SG10201400611V A SG 10201400611VA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- semiconductor material
- material wafer
- wafer
- semiconductor
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201310204839 DE102013204839A1 (de) | 2013-03-19 | 2013-03-19 | Verfahren zum Polieren einer Scheibe aus Halbleitermaterial |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201400611VA true SG10201400611VA (en) | 2014-10-30 |
Family
ID=51484645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201400611VA SG10201400611VA (en) | 2013-03-19 | 2014-03-13 | Method For Polishing A Semiconductor Material Wafer |
Country Status (7)
Country | Link |
---|---|
US (1) | US9193026B2 (ja) |
JP (1) | JP5853041B2 (ja) |
KR (1) | KR101600171B1 (ja) |
CN (1) | CN104064455B (ja) |
DE (1) | DE102013204839A1 (ja) |
SG (1) | SG10201400611VA (ja) |
TW (1) | TWI566287B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016092247A (ja) * | 2014-11-06 | 2016-05-23 | 株式会社ディスコ | SiC基板の研磨方法 |
JP6635003B2 (ja) * | 2016-11-02 | 2020-01-22 | 株式会社Sumco | 半導体ウェーハの両面研磨方法 |
DE102016222063A1 (de) * | 2016-11-10 | 2018-05-17 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
JP6327329B1 (ja) * | 2016-12-20 | 2018-05-23 | 株式会社Sumco | シリコンウェーハの研磨方法およびシリコンウェーハの製造方法 |
JP6635088B2 (ja) * | 2017-04-24 | 2020-01-22 | 信越半導体株式会社 | シリコンウエーハの研磨方法 |
JP6747376B2 (ja) * | 2017-05-15 | 2020-08-26 | 信越半導体株式会社 | シリコンウエーハの研磨方法 |
CN109290853B (zh) * | 2017-07-24 | 2021-06-04 | 蓝思科技(长沙)有限公司 | 一种超薄蓝宝石片的制备方法 |
WO2019043895A1 (ja) * | 2017-08-31 | 2019-03-07 | 株式会社Sumco | シリコンウェーハの両面研磨方法 |
JP6844530B2 (ja) * | 2017-12-28 | 2021-03-17 | 株式会社Sumco | ワークの両面研磨装置および両面研磨方法 |
DE102018202059A1 (de) * | 2018-02-09 | 2019-08-14 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
CN109605207A (zh) * | 2018-12-27 | 2019-04-12 | 西安奕斯伟硅片技术有限公司 | 晶圆处理方法和装置 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3691694A (en) | 1970-11-02 | 1972-09-19 | Ibm | Wafer polishing machine |
US3923567A (en) | 1974-08-09 | 1975-12-02 | Silicon Materials Inc | Method of reclaiming a semiconductor wafer |
US3997368A (en) | 1975-06-24 | 1976-12-14 | Bell Telephone Laboratories, Incorporated | Elimination of stacking faults in silicon devices: a gettering process |
US5139571A (en) | 1991-04-24 | 1992-08-18 | Motorola, Inc. | Non-contaminating wafer polishing slurry |
JP2798345B2 (ja) | 1993-06-11 | 1998-09-17 | 信越半導体株式会社 | ウェーハのノッチ部研磨装置 |
TW308561B (ja) * | 1995-08-24 | 1997-06-21 | Mutsubishi Gum Kk | |
WO1999009588A1 (en) * | 1997-08-21 | 1999-02-25 | Memc Electronic Materials, Inc. | Method of processing semiconductor wafers |
DE19756614A1 (de) | 1997-12-18 | 1999-07-01 | Wacker Siltronic Halbleitermat | Verfahren zur Montage und Demontage einer Halbleiterscheibe, und Stoffmischung, die zur Durchführung des Verfahrens geeignet ist |
JP2000158315A (ja) | 1998-11-27 | 2000-06-13 | Speedfam-Ipec Co Ltd | 端面研磨装置におけるノッチ研磨装置のノッチ研磨方法 |
WO2000047369A1 (en) | 1999-02-12 | 2000-08-17 | Memc Electronic Materials, Inc. | Method of polishing semiconductor wafers |
DE19956250C1 (de) | 1999-11-23 | 2001-05-17 | Wacker Siltronic Halbleitermat | Kostengünstiges Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben |
JP2001332517A (ja) | 2000-05-22 | 2001-11-30 | Okamoto Machine Tool Works Ltd | 基板の化学機械研磨方法 |
JP2002124490A (ja) * | 2000-08-03 | 2002-04-26 | Sumitomo Metal Ind Ltd | 半導体ウェーハの製造方法 |
US6306016B1 (en) | 2000-08-03 | 2001-10-23 | Tsk America, Inc. | Wafer notch polishing machine and method of polishing an orientation notch in a wafer |
DE10054166C2 (de) | 2000-11-02 | 2002-08-08 | Wacker Siltronic Halbleitermat | Vorrichtung zum Polieren von Halbleiterscheiben |
DE10058305A1 (de) | 2000-11-24 | 2002-06-06 | Wacker Siltronic Halbleitermat | Verfahren zur Oberflächenpolitur von Siliciumscheiben |
JP2002329687A (ja) | 2001-05-02 | 2002-11-15 | Speedfam Co Ltd | デバイスウエハの外周研磨装置及び研磨方法 |
JP4352229B2 (ja) * | 2003-11-20 | 2009-10-28 | 信越半導体株式会社 | 半導体ウェーハの両面研磨方法 |
DE102004040429B4 (de) | 2004-08-20 | 2009-12-17 | Peter Wolters Gmbh | Doppelseiten-Poliermaschine |
JP2006100799A (ja) | 2004-09-06 | 2006-04-13 | Sumco Corp | シリコンウェーハの製造方法 |
US7559825B2 (en) * | 2006-12-21 | 2009-07-14 | Memc Electronic Materials, Inc. | Method of polishing a semiconductor wafer |
DE102007026292A1 (de) | 2007-06-06 | 2008-12-11 | Siltronic Ag | Verfahren zur einseitigen Politur nicht strukturierter Halbleiterscheiben |
DE102007035266B4 (de) | 2007-07-27 | 2010-03-25 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Silicium oder einer Legierung aus Silicium und Germanium |
DE102007056122A1 (de) * | 2007-11-15 | 2009-05-28 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante |
JP2009302409A (ja) * | 2008-06-16 | 2009-12-24 | Sumco Corp | 半導体ウェーハの製造方法 |
JP2010017811A (ja) * | 2008-07-11 | 2010-01-28 | Sumco Corp | 半導体ウェーハの製造方法 |
DE102009030292B4 (de) * | 2009-06-24 | 2011-12-01 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
DE102009030294B4 (de) | 2009-06-24 | 2013-04-25 | Siltronic Ag | Verfahren zur Politur der Kante einer Halbleiterscheibe |
DE102009038941B4 (de) | 2009-08-26 | 2013-03-21 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
JP2011091143A (ja) | 2009-10-21 | 2011-05-06 | Sumco Corp | シリコンエピタキシャルウェーハの製造方法 |
CN101791779A (zh) * | 2009-12-03 | 2010-08-04 | 北京有色金属研究总院 | 半导体硅片制造工艺 |
DE102010013520B4 (de) | 2010-03-31 | 2013-02-07 | Siltronic Ag | Verfahren zur beidseitigen Politur einer Halbleiterscheibe |
DE102010014874A1 (de) * | 2010-04-14 | 2011-10-20 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102010024040A1 (de) * | 2010-06-16 | 2011-12-22 | Siltronic Ag | Verfahren zur Politur einer Halbleiterscheibe |
DE112011102297B4 (de) | 2010-07-08 | 2020-10-08 | Sumco Corporation | Verfahren zum Polieren von Siliziumwafern |
CN102528597B (zh) * | 2010-12-08 | 2015-06-24 | 有研新材料股份有限公司 | 一种大直径硅片制造工艺 |
JP5479390B2 (ja) | 2011-03-07 | 2014-04-23 | 信越半導体株式会社 | シリコンウェーハの製造方法 |
JP5494552B2 (ja) | 2011-04-15 | 2014-05-14 | 信越半導体株式会社 | 両頭研削方法及び両頭研削装置 |
-
2013
- 2013-03-19 DE DE201310204839 patent/DE102013204839A1/de not_active Ceased
-
2014
- 2014-03-13 SG SG10201400611VA patent/SG10201400611VA/en unknown
- 2014-03-14 TW TW103109411A patent/TWI566287B/zh not_active IP Right Cessation
- 2014-03-14 US US14/210,570 patent/US9193026B2/en not_active Expired - Fee Related
- 2014-03-17 CN CN201410098303.1A patent/CN104064455B/zh not_active Expired - Fee Related
- 2014-03-18 KR KR1020140031692A patent/KR101600171B1/ko active IP Right Grant
- 2014-03-18 JP JP2014054822A patent/JP5853041B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN104064455A (zh) | 2014-09-24 |
US9193026B2 (en) | 2015-11-24 |
JP5853041B2 (ja) | 2016-02-09 |
DE102013204839A1 (de) | 2014-09-25 |
KR20140114791A (ko) | 2014-09-29 |
KR101600171B1 (ko) | 2016-03-04 |
JP2014180753A (ja) | 2014-09-29 |
TWI566287B (zh) | 2017-01-11 |
US20140287656A1 (en) | 2014-09-25 |
CN104064455B (zh) | 2018-02-06 |
TW201438087A (zh) | 2014-10-01 |
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