SE9702598D0 - Bipolär effekttransistor och framställningsförfarande - Google Patents
Bipolär effekttransistor och framställningsförfarandeInfo
- Publication number
- SE9702598D0 SE9702598D0 SE9702598A SE9702598A SE9702598D0 SE 9702598 D0 SE9702598 D0 SE 9702598D0 SE 9702598 A SE9702598 A SE 9702598A SE 9702598 A SE9702598 A SE 9702598A SE 9702598 D0 SE9702598 D0 SE 9702598D0
- Authority
- SE
- Sweden
- Prior art keywords
- power transistor
- electrically connected
- base
- emitter
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
- H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9702598A SE509780C2 (sv) | 1997-07-04 | 1997-07-04 | Bipolär effekttransistor och framställningsförfarande |
TW086117556A TW420849B (en) | 1997-07-04 | 1997-11-24 | Bipolar power transistor and manufacturing method |
PCT/SE1998/000975 WO1999001900A1 (en) | 1997-07-04 | 1998-05-25 | Bipolar power transistor and manufacturing method |
EP98924718A EP1027733A1 (en) | 1997-07-04 | 1998-05-25 | Bipolar power transistor and manufacturing method |
CN98806912A CN1261984A (zh) | 1997-07-04 | 1998-05-25 | 双极功率晶体管及其制造方法 |
AU76820/98A AU7682098A (en) | 1997-07-04 | 1998-05-25 | Bipolar power transistor and manufacturing method |
JP50699899A JP2002508889A (ja) | 1997-07-04 | 1998-05-25 | バイポーラ・パワー・トランジスタおよび製造方法 |
CA002294806A CA2294806A1 (en) | 1997-07-04 | 1998-05-25 | Bipolar power transistor and manufacturing method |
KR19997012152A KR20010014103A (ko) | 1997-07-04 | 1998-05-25 | 바이폴라 전력 트랜지스터 및 그 제조 방법 |
US09/109,058 US6077753A (en) | 1997-07-04 | 1998-07-02 | Method for manufacturing vertical bipolar transistor having a field shield between an interconnecting layer and the field oxide |
US09/524,782 US6239475B1 (en) | 1997-07-04 | 2000-03-13 | Vertical bipolar transistor having a field shield between the metallic interconnecting layer and the insulation oxide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9702598A SE509780C2 (sv) | 1997-07-04 | 1997-07-04 | Bipolär effekttransistor och framställningsförfarande |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9702598D0 true SE9702598D0 (sv) | 1997-07-04 |
SE9702598L SE9702598L (sv) | 1999-01-05 |
SE509780C2 SE509780C2 (sv) | 1999-03-08 |
Family
ID=20407650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9702598A SE509780C2 (sv) | 1997-07-04 | 1997-07-04 | Bipolär effekttransistor och framställningsförfarande |
Country Status (10)
Country | Link |
---|---|
US (2) | US6077753A (sv) |
EP (1) | EP1027733A1 (sv) |
JP (1) | JP2002508889A (sv) |
KR (1) | KR20010014103A (sv) |
CN (1) | CN1261984A (sv) |
AU (1) | AU7682098A (sv) |
CA (1) | CA2294806A1 (sv) |
SE (1) | SE509780C2 (sv) |
TW (1) | TW420849B (sv) |
WO (1) | WO1999001900A1 (sv) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0215185D0 (en) | 2002-07-01 | 2002-08-07 | Genovision As | Binding a target substance |
JP4626935B2 (ja) * | 2002-10-01 | 2011-02-09 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US6841795B2 (en) * | 2002-10-25 | 2005-01-11 | The University Of Connecticut | Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation |
US6974969B2 (en) | 2003-01-13 | 2005-12-13 | The University Of Connecticut | P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer |
US7109589B2 (en) * | 2004-08-26 | 2006-09-19 | Agere Systems Inc. | Integrated circuit with substantially perpendicular wire bonds |
US8429577B2 (en) * | 2008-06-26 | 2013-04-23 | Qualcomm Incorporated | Predictive modeling of interconnect modules for advanced on-chip interconnect technology |
US8483997B2 (en) | 2008-06-26 | 2013-07-09 | Qualcomm Incorporated | Predictive modeling of contact and via modules for advanced on-chip interconnect technology |
CN102403223B (zh) * | 2011-10-25 | 2013-04-17 | 丹东安顺微电子有限公司 | 改善贮存时间Ts一致性的功率晶体管制造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3302076A (en) * | 1963-06-06 | 1967-01-31 | Motorola Inc | Semiconductor device with passivated junction |
JPS51123562A (en) * | 1975-04-21 | 1976-10-28 | Sony Corp | Production method of semiconductor device |
US4573064A (en) * | 1981-11-02 | 1986-02-25 | Texas Instruments Incorporated | GaAs/GaAlAs Heterojunction bipolar integrated circuit devices |
JPS59188970A (ja) * | 1983-04-12 | 1984-10-26 | Nec Corp | 半導体装置 |
JP2518886B2 (ja) * | 1988-02-25 | 1996-07-31 | 富士通株式会社 | バイポ―ラ型半導体装置の製造方法 |
US5204735A (en) * | 1988-04-21 | 1993-04-20 | Kabushiki Kaisha Toshiba | High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same |
JP2607616B2 (ja) * | 1988-04-25 | 1997-05-07 | 富士通株式会社 | 半導体装置の製造方法 |
US4864379A (en) * | 1988-05-20 | 1989-09-05 | General Electric Company | Bipolar transistor with field shields |
JP2504547B2 (ja) * | 1988-12-13 | 1996-06-05 | 日産自動車株式会社 | バイポ―ラ形薄膜半導体装置 |
US5034337A (en) * | 1989-02-10 | 1991-07-23 | Texas Instruments Incorporated | Method of making an integrated circuit that combines multi-epitaxial power transistors with logic/analog devices |
US4918026A (en) * | 1989-03-17 | 1990-04-17 | Delco Electronics Corporation | Process for forming vertical bipolar transistors and high voltage CMOS in a single integrated circuit chip |
JP2808882B2 (ja) * | 1990-05-07 | 1998-10-08 | 富士電機株式会社 | 絶縁ゲート型バイポーラトランジスタ |
JP2650519B2 (ja) * | 1991-07-25 | 1997-09-03 | 株式会社日立製作所 | 横型絶縁ゲートトランジスタ |
JPH05343413A (ja) * | 1992-06-11 | 1993-12-24 | Fujitsu Ltd | バイポーラトランジスタとその製造方法 |
EP0590804B1 (en) * | 1992-09-03 | 1997-02-05 | STMicroelectronics, Inc. | Vertically isolated monolithic bipolar high-power transistor with top collector |
DE69431609T2 (de) * | 1993-04-08 | 2003-06-26 | Koninkl Philips Electronics Nv | Verfahren zur Herstellung einer Halbleiteranordnung mit einem Bipolartransistor |
US5373183A (en) * | 1993-04-28 | 1994-12-13 | Harris Corporation | Integrated circuit with improved reverse bias breakdown |
US5488252A (en) * | 1994-08-16 | 1996-01-30 | Telefonaktiebolaget L M Erricsson | Layout for radio frequency power transistors |
US5606195A (en) * | 1995-12-26 | 1997-02-25 | Hughes Electronics | High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes |
-
1997
- 1997-07-04 SE SE9702598A patent/SE509780C2/sv not_active IP Right Cessation
- 1997-11-24 TW TW086117556A patent/TW420849B/zh not_active IP Right Cessation
-
1998
- 1998-05-25 CN CN98806912A patent/CN1261984A/zh active Pending
- 1998-05-25 KR KR19997012152A patent/KR20010014103A/ko active IP Right Grant
- 1998-05-25 JP JP50699899A patent/JP2002508889A/ja active Pending
- 1998-05-25 CA CA002294806A patent/CA2294806A1/en not_active Abandoned
- 1998-05-25 AU AU76820/98A patent/AU7682098A/en not_active Abandoned
- 1998-05-25 EP EP98924718A patent/EP1027733A1/en not_active Withdrawn
- 1998-05-25 WO PCT/SE1998/000975 patent/WO1999001900A1/en not_active Application Discontinuation
- 1998-07-02 US US09/109,058 patent/US6077753A/en not_active Expired - Lifetime
-
2000
- 2000-03-13 US US09/524,782 patent/US6239475B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6077753A (en) | 2000-06-20 |
WO1999001900A1 (en) | 1999-01-14 |
CA2294806A1 (en) | 1999-01-14 |
EP1027733A1 (en) | 2000-08-16 |
KR20010014103A (ko) | 2001-02-26 |
TW420849B (en) | 2001-02-01 |
JP2002508889A (ja) | 2002-03-19 |
US6239475B1 (en) | 2001-05-29 |
SE509780C2 (sv) | 1999-03-08 |
SE9702598L (sv) | 1999-01-05 |
AU7682098A (en) | 1999-01-25 |
CN1261984A (zh) | 2000-08-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |