SE9703129D0 - Bipolär effekttransistor och framställningsförfarande - Google Patents

Bipolär effekttransistor och framställningsförfarande

Info

Publication number
SE9703129D0
SE9703129D0 SE9703129A SE9703129A SE9703129D0 SE 9703129 D0 SE9703129 D0 SE 9703129D0 SE 9703129 A SE9703129 A SE 9703129A SE 9703129 A SE9703129 A SE 9703129A SE 9703129 D0 SE9703129 D0 SE 9703129D0
Authority
SE
Sweden
Prior art keywords
collector layer
power transistor
degree
bipolar power
manufacturing
Prior art date
Application number
SE9703129A
Other languages
English (en)
Other versions
SE9703129L (sv
SE511891C2 (sv
Inventor
Ted Johansson
Bengt Torkel Arnborg
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9703129A priority Critical patent/SE511891C2/sv
Publication of SE9703129D0 publication Critical patent/SE9703129D0/sv
Priority to TW086116819A priority patent/TW358987B/zh
Priority to JP2000509119A priority patent/JP2001515278A/ja
Priority to DE69838794T priority patent/DE69838794T2/de
Priority to CA002300127A priority patent/CA2300127A1/en
Priority to KR1020007002079A priority patent/KR20010023436A/ko
Priority to CNB988086875A priority patent/CN100358154C/zh
Priority to EP98939842A priority patent/EP1021835B1/en
Priority to AU88214/98A priority patent/AU8821498A/en
Priority to PCT/SE1998/001479 priority patent/WO1999012211A1/en
Priority to US09/141,537 priority patent/US6198156B1/en
Publication of SE9703129L publication Critical patent/SE9703129L/sv
Publication of SE511891C2 publication Critical patent/SE511891C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
SE9703129A 1997-08-29 1997-08-29 Bipolär effekttransistor och framställningsförfarande SE511891C2 (sv)

Priority Applications (11)

Application Number Priority Date Filing Date Title
SE9703129A SE511891C2 (sv) 1997-08-29 1997-08-29 Bipolär effekttransistor och framställningsförfarande
TW086116819A TW358987B (en) 1997-08-29 1997-11-11 Bipolar power transistors and manufacturing method
PCT/SE1998/001479 WO1999012211A1 (en) 1997-08-29 1998-08-18 Bipolar power transistors and manufacturing method
CA002300127A CA2300127A1 (en) 1997-08-29 1998-08-18 Bipolar power transistors and manufacturing method
DE69838794T DE69838794T2 (de) 1997-08-29 1998-08-18 Verfahren zur herstellung eines leistungsbipolartransistors
JP2000509119A JP2001515278A (ja) 1997-08-29 1998-08-18 バイポーラ電力用トランジスタとその製造法
KR1020007002079A KR20010023436A (ko) 1997-08-29 1998-08-18 바이폴라 전력 트랜지스터 및 제조방법
CNB988086875A CN100358154C (zh) 1997-08-29 1998-08-18 双极型功率晶体管及其制造方法
EP98939842A EP1021835B1 (en) 1997-08-29 1998-08-18 Method of manufacturing a bipolar power transistor
AU88214/98A AU8821498A (en) 1997-08-29 1998-08-18 Bipolar power transistors and manufacturing method
US09/141,537 US6198156B1 (en) 1997-08-29 1998-08-28 Bipolar power transistors and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9703129A SE511891C2 (sv) 1997-08-29 1997-08-29 Bipolär effekttransistor och framställningsförfarande

Publications (3)

Publication Number Publication Date
SE9703129D0 true SE9703129D0 (sv) 1997-08-29
SE9703129L SE9703129L (sv) 1999-03-01
SE511891C2 SE511891C2 (sv) 1999-12-13

Family

ID=20408089

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9703129A SE511891C2 (sv) 1997-08-29 1997-08-29 Bipolär effekttransistor och framställningsförfarande

Country Status (11)

Country Link
US (1) US6198156B1 (sv)
EP (1) EP1021835B1 (sv)
JP (1) JP2001515278A (sv)
KR (1) KR20010023436A (sv)
CN (1) CN100358154C (sv)
AU (1) AU8821498A (sv)
CA (1) CA2300127A1 (sv)
DE (1) DE69838794T2 (sv)
SE (1) SE511891C2 (sv)
TW (1) TW358987B (sv)
WO (1) WO1999012211A1 (sv)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001255693A1 (en) 2000-04-27 2001-11-12 En Jun Zhu Improved structure for a semiconductor device
SE0103036D0 (sv) * 2001-05-04 2001-09-13 Ericsson Telefon Ab L M Semiconductor process and integrated circuit
DE10160509A1 (de) * 2001-11-30 2003-06-12 Ihp Gmbh Halbleitervorrichtung und Verfahren zu ihrer Herstellung
CN102403223B (zh) * 2011-10-25 2013-04-17 丹东安顺微电子有限公司 改善贮存时间Ts一致性的功率晶体管制造方法
CN103606554A (zh) * 2013-11-13 2014-02-26 江苏博普电子科技有限责任公司 一种提高了BVceo的双极型晶体管及其生产工艺

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237200A (en) * 1989-07-28 1993-08-17 Hitachi, Ltd. Semiconductor bipolar transistor with concentric regions
US5071778A (en) * 1990-06-26 1991-12-10 National Semiconductor Corporation Self-aligned collector implant for bipolar transistors
GB2255226B (en) * 1991-04-23 1995-03-01 Intel Corp Bicmos process for counter doped collector
US5270223A (en) * 1991-06-28 1993-12-14 Texas Instruments Incorporated Multiple layer wide bandgap collector structure for bipolar transistors
CA2124843A1 (en) * 1992-02-25 1993-09-02 James A. Matthews Bipolar junction transistor exhibiting suppressed kirk effect
DE69528203T2 (de) * 1994-02-02 2003-07-31 Rohm Co Ltd Transistor
US5488252A (en) * 1994-08-16 1996-01-30 Telefonaktiebolaget L M Erricsson Layout for radio frequency power transistors
JP2748898B2 (ja) * 1995-08-31 1998-05-13 日本電気株式会社 半導体装置およびその製造方法
JP3366919B2 (ja) * 1997-06-27 2003-01-14 エヌイーシー化合物デバイス株式会社 半導体装置

Also Published As

Publication number Publication date
WO1999012211A1 (en) 1999-03-11
EP1021835A1 (en) 2000-07-26
SE9703129L (sv) 1999-03-01
DE69838794D1 (de) 2008-01-10
EP1021835B1 (en) 2007-11-28
CN100358154C (zh) 2007-12-26
KR20010023436A (ko) 2001-03-26
CN1269054A (zh) 2000-10-04
SE511891C2 (sv) 1999-12-13
TW358987B (en) 1999-05-21
CA2300127A1 (en) 1999-03-11
AU8821498A (en) 1999-03-22
DE69838794T2 (de) 2008-11-20
JP2001515278A (ja) 2001-09-18
US6198156B1 (en) 2001-03-06

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