KR960012581B1 - Bipolar junction transistor & method of manufacturing the same - Google Patents

Bipolar junction transistor & method of manufacturing the same Download PDF

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Publication number
KR960012581B1
KR960012581B1 KR88006400A KR880006400A KR960012581B1 KR 960012581 B1 KR960012581 B1 KR 960012581B1 KR 88006400 A KR88006400 A KR 88006400A KR 880006400 A KR880006400 A KR 880006400A KR 960012581 B1 KR960012581 B1 KR 960012581B1
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KR
South Korea
Prior art keywords
forming
bipolar junction
junction transistor
manufacturing
same
Prior art date
Application number
KR88006400A
Other languages
Korean (ko)
Other versions
KR890017814A (en
Inventor
Young-Kwon Chon
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Priority to KR88006400A priority Critical patent/KR960012581B1/en
Publication of KR890017814A publication Critical patent/KR890017814A/en
Application granted granted Critical
Publication of KR960012581B1 publication Critical patent/KR960012581B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

The method of manufacturing radio frequency bipolar junction transistor comprises the steps of : forming a first oxide insulating layer(2) on a semiconductor substrate(1) by CVD(Chemical Vapor Deposition); forming a buried layer(3) by ion-injection; forming a second oxide insulating layer(5) on the first oxide insulating layer(2) and forming a base/collector oxide wall(7) on a first epitaxial layer(4) by CVD; forming a second epitaxial layer(8), and forming a base, an emitter and a collector by ion-injection.
KR88006400A 1988-05-31 1988-05-31 Bipolar junction transistor & method of manufacturing the same KR960012581B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR88006400A KR960012581B1 (en) 1988-05-31 1988-05-31 Bipolar junction transistor & method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR88006400A KR960012581B1 (en) 1988-05-31 1988-05-31 Bipolar junction transistor & method of manufacturing the same

Publications (2)

Publication Number Publication Date
KR890017814A KR890017814A (en) 1989-12-18
KR960012581B1 true KR960012581B1 (en) 1996-09-23

Family

ID=19274779

Family Applications (1)

Application Number Title Priority Date Filing Date
KR88006400A KR960012581B1 (en) 1988-05-31 1988-05-31 Bipolar junction transistor & method of manufacturing the same

Country Status (1)

Country Link
KR (1) KR960012581B1 (en)

Also Published As

Publication number Publication date
KR890017814A (en) 1989-12-18

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