SE9302185L - Elektriskt kopplingssubstrat med såväl trådanslutnings- som lödkontakter samt förfarande för tillverkning av detsamma - Google Patents
Elektriskt kopplingssubstrat med såväl trådanslutnings- som lödkontakter samt förfarande för tillverkning av detsammaInfo
- Publication number
- SE9302185L SE9302185L SE9302185A SE9302185A SE9302185L SE 9302185 L SE9302185 L SE 9302185L SE 9302185 A SE9302185 A SE 9302185A SE 9302185 A SE9302185 A SE 9302185A SE 9302185 L SE9302185 L SE 9302185L
- Authority
- SE
- Sweden
- Prior art keywords
- solder
- substrate
- pads
- mask
- gold
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 title abstract 9
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/018—Unsoldering; Removal of melted solder or other residues
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/08—Soldering by means of dipping in molten solder
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/08—Soldering by means of dipping in molten solder
- B23K1/085—Wave soldering
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2924/12—Passive devices, e.g. 2 terminal devices
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- H01L2924/12042—LASER
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
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- H05K2201/0154—Polyimide
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0305—Solder used for other purposes than connections between PCB or components, e.g. for filling vias or for programmable patterns
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0388—Other aspects of conductors
- H05K2201/0391—Using different types of conductors
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0361—Stripping a part of an upper metal layer to expose a lower metal layer, e.g. by etching or using a laser
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/044—Solder dip coating, i.e. coating printed conductors, e.g. pads by dipping in molten solder or by wave soldering
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/049—Wire bonding
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0585—Second resist used as mask for selective stripping of first resist
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0041—Etching of the substrate by chemical or physical means by plasma etching
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
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- H05K3/28—Applying non-metallic protective coatings
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/906,637 US5311404A (en) | 1992-06-30 | 1992-06-30 | Electrical interconnection substrate with both wire bond and solder contacts |
Publications (2)
Publication Number | Publication Date |
---|---|
SE9302185D0 SE9302185D0 (sv) | 1993-06-23 |
SE9302185L true SE9302185L (sv) | 1993-12-31 |
Family
ID=25422750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9302185A SE9302185L (sv) | 1992-06-30 | 1993-06-23 | Elektriskt kopplingssubstrat med såväl trådanslutnings- som lödkontakter samt förfarande för tillverkning av detsamma |
Country Status (4)
Country | Link |
---|---|
US (2) | US5311404A (sv) |
JP (1) | JPH0689919A (sv) |
GB (1) | GB2268108B (sv) |
SE (1) | SE9302185L (sv) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5416278A (en) * | 1993-03-01 | 1995-05-16 | Motorola, Inc. | Feedthrough via connection |
US5523920A (en) * | 1994-01-03 | 1996-06-04 | Motorola, Inc. | Printed circuit board comprising elevated bond pads |
JP3531971B2 (ja) * | 1994-05-16 | 2004-05-31 | フィガロ技研株式会社 | ガスまたは湿度を検出するセンサとその製造方法 |
US5796714A (en) * | 1994-09-28 | 1998-08-18 | Matsushita Electric Industrial Co., Ltd. | Optical module having a vertical-cavity surface-emitting laser |
JP3138159B2 (ja) * | 1994-11-22 | 2001-02-26 | シャープ株式会社 | 半導体装置、半導体装置実装体、及び半導体装置の交換方法 |
JP3279940B2 (ja) * | 1996-11-27 | 2002-04-30 | シャープ株式会社 | 電子回路装置の製造方法、半田残渣均一化治具、金属ロウペースト転写用治具及び電子回路装置の製造装置 |
US5907769A (en) * | 1996-12-30 | 1999-05-25 | Micron Technology, Inc. | Leads under chip in conventional IC package |
TW322613B (en) * | 1997-03-10 | 1997-12-11 | guang-long Lin | Continuous method of implementing solder bump on semiconductor wafer electrode |
US6041269A (en) * | 1997-08-11 | 2000-03-21 | Advanced Micro Devices, Inc. | Integrated circuit package verification |
US6164523A (en) * | 1998-07-01 | 2000-12-26 | Semiconductor Components Industries, Llc | Electronic component and method of manufacture |
US6965165B2 (en) * | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
US6303423B1 (en) * | 1998-12-21 | 2001-10-16 | Megic Corporation | Method for forming high performance system-on-chip using post passivation process |
US6403457B2 (en) * | 1999-08-25 | 2002-06-11 | Micron Technology, Inc. | Selectively coating bond pads |
US6740969B1 (en) * | 1999-08-25 | 2004-05-25 | Renesas Technology Corp. | Electronic device |
JP3973340B2 (ja) * | 1999-10-05 | 2007-09-12 | Necエレクトロニクス株式会社 | 半導体装置、配線基板、及び、それらの製造方法 |
DE10018025A1 (de) | 2000-04-04 | 2001-10-18 | Atotech Deutschland Gmbh | Verfahren zum Erzeugen von lötfähigen Oberflächen und funktionellen Oberflächen auf Schaltungsträgern |
ATE371265T1 (de) * | 2000-04-20 | 2007-09-15 | Elwyn Paul Michael Wakefield | Verfahren zur herstellung elektrischer/mechanischer verbindungen |
US6736942B2 (en) * | 2000-05-02 | 2004-05-18 | Johns Hopkins University | Freestanding reactive multilayer foils |
US6321976B1 (en) * | 2000-05-22 | 2001-11-27 | Siliconware Precision Industries Co., Ltd. | Method of wire bonding for small clearance |
US6378759B1 (en) * | 2000-07-18 | 2002-04-30 | Chartered Semiconductor Manufacturing Ltd. | Method of application of conductive cap-layer in flip-chip, COB, and micro metal bonding |
US6415973B1 (en) * | 2000-07-18 | 2002-07-09 | Chartered Semiconductor Manufacturing Ltd. | Method of application of copper solution in flip-chip, COB, and micrometal bonding |
US6627998B1 (en) * | 2000-07-27 | 2003-09-30 | International Business Machines Corporation | Wafer scale thin film package |
US6518161B1 (en) * | 2001-03-07 | 2003-02-11 | Lsi Logic Corporation | Method for manufacturing a dual chip in package with a flip chip die mounted on a wire bonded die |
US6643075B2 (en) * | 2001-06-11 | 2003-11-04 | Axsun Technologies, Inc. | Reentrant-walled optical system template and process for optical system fabrication using same |
US6395625B1 (en) * | 2001-10-12 | 2002-05-28 | S & S Technology Corporation | Method for manufacturing solder mask of printed circuit board |
EP1318707A1 (en) * | 2001-10-16 | 2003-06-11 | Ultratera Corporation | Method for manufacturing solder mask of printed circuit board |
US6708871B2 (en) * | 2002-01-08 | 2004-03-23 | International Business Machines Corporation | Method for forming solder connections on a circuitized substrate |
US6784544B1 (en) * | 2002-06-25 | 2004-08-31 | Micron Technology, Inc. | Semiconductor component having conductors with wire bondable metalization layers |
US7071421B2 (en) | 2003-08-29 | 2006-07-04 | Micron Technology, Inc. | Stacked microfeature devices and associated methods |
US6978214B2 (en) | 2003-11-25 | 2005-12-20 | International Business Machines Corporation | Validation of electrical performance of an electronic package prior to fabrication |
JP4351129B2 (ja) * | 2004-09-01 | 2009-10-28 | 日東電工株式会社 | 配線回路基板 |
US8384189B2 (en) * | 2005-03-29 | 2013-02-26 | Megica Corporation | High performance system-on-chip using post passivation process |
US7531426B2 (en) * | 2005-08-19 | 2009-05-12 | Honeywell International Inc. | Approach to high temperature wafer processing |
JP2007059485A (ja) * | 2005-08-22 | 2007-03-08 | Rohm Co Ltd | 半導体装置、基板及び半導体装置の製造方法 |
US8319343B2 (en) * | 2005-09-21 | 2012-11-27 | Agere Systems Llc | Routing under bond pad for the replacement of an interconnect layer |
US20070114674A1 (en) * | 2005-11-22 | 2007-05-24 | Brown Matthew R | Hybrid solder pad |
US7521287B2 (en) * | 2006-11-20 | 2009-04-21 | International Business Machines Corporation | Wire and solder bond forming methods |
US7601628B2 (en) * | 2006-11-20 | 2009-10-13 | International Business Machines Corporation | Wire and solder bond forming methods |
US7732346B2 (en) * | 2007-02-27 | 2010-06-08 | United Mircoelectronics Corp. | Wet cleaning process and method for fabricating semiconductor device using the same |
TW200847882A (en) * | 2007-05-25 | 2008-12-01 | Princo Corp | A surface finish structure of multi-layer substrate and manufacturing method thereof. |
CN102683219A (zh) * | 2007-06-12 | 2012-09-19 | 巨擘科技股份有限公司 | 多层基板表面处理层结构及其制造方法 |
US7952834B2 (en) * | 2008-02-22 | 2011-05-31 | Seagate Technology Llc | Flex circuit assembly with thermal energy dissipation |
CN101810063B (zh) * | 2008-09-30 | 2012-10-10 | 揖斐电株式会社 | 多层印刷线路板以及多层印刷线路板的制造方法 |
US8592691B2 (en) * | 2009-02-27 | 2013-11-26 | Ibiden Co., Ltd. | Printed wiring board |
EP2302676A1 (en) * | 2009-09-29 | 2011-03-30 | ABB Technology AG | High power semiconductor device |
US8669777B2 (en) | 2010-10-27 | 2014-03-11 | Seagate Technology Llc | Assessing connection joint coverage between a device and a printed circuit board |
US8772058B2 (en) * | 2012-02-02 | 2014-07-08 | Harris Corporation | Method for making a redistributed wafer using transferrable redistribution layers |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3525066A (en) * | 1968-01-12 | 1970-08-18 | Ibm | Electrical contact pins and method of making same |
JPS5933894A (ja) * | 1982-08-19 | 1984-02-23 | 電気化学工業株式会社 | 混成集積用回路基板の製造法 |
US5182420A (en) * | 1989-04-25 | 1993-01-26 | Cray Research, Inc. | Method of fabricating metallized chip carriers from wafer-shaped substrates |
US5002818A (en) * | 1989-09-05 | 1991-03-26 | Hughes Aircraft Company | Reworkable epoxy die-attach adhesive |
US5254493A (en) * | 1990-10-30 | 1993-10-19 | Microelectronics And Computer Technology Corporation | Method of fabricating integrated resistors in high density substrates |
US5118385A (en) * | 1991-05-28 | 1992-06-02 | Microelectronics And Computer Technology Corporation | Multilayer electrical interconnect fabrication with few process steps |
-
1992
- 1992-06-30 US US07/906,637 patent/US5311404A/en not_active Expired - Fee Related
-
1993
- 1993-06-22 GB GB9312878A patent/GB2268108B/en not_active Expired - Fee Related
- 1993-06-23 SE SE9302185A patent/SE9302185L/sv not_active Application Discontinuation
- 1993-06-30 JP JP5162754A patent/JPH0689919A/ja active Pending
-
1994
- 1994-10-13 US US08/324,271 patent/US5445311A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5445311A (en) | 1995-08-29 |
GB2268108A (en) | 1994-01-05 |
US5311404A (en) | 1994-05-10 |
GB2268108B (en) | 1996-03-27 |
SE9302185D0 (sv) | 1993-06-23 |
JPH0689919A (ja) | 1994-03-29 |
GB9312878D0 (en) | 1993-08-04 |
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