SE7703219L - Sjelvskyddande halvledaranordning - Google Patents

Sjelvskyddande halvledaranordning

Info

Publication number
SE7703219L
SE7703219L SE7703219A SE7703219A SE7703219L SE 7703219 L SE7703219 L SE 7703219L SE 7703219 A SE7703219 A SE 7703219A SE 7703219 A SE7703219 A SE 7703219A SE 7703219 L SE7703219 L SE 7703219L
Authority
SE
Sweden
Prior art keywords
region
self
semiconductor device
multiplication factor
protecting semiconductor
Prior art date
Application number
SE7703219A
Other languages
English (en)
Swedish (sv)
Other versions
SE427884B (sv
Inventor
V A K Temple
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7703219L publication Critical patent/SE7703219L/
Publication of SE427884B publication Critical patent/SE427884B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
SE7703219A 1976-03-22 1977-03-21 Sjelvskyddande tyristoranordning och forfarande for dess framstellning SE427884B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/669,403 US4087834A (en) 1976-03-22 1976-03-22 Self-protecting semiconductor device

Publications (2)

Publication Number Publication Date
SE7703219L true SE7703219L (sv) 1977-09-23
SE427884B SE427884B (sv) 1983-05-09

Family

ID=24686213

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7703219A SE427884B (sv) 1976-03-22 1977-03-21 Sjelvskyddande tyristoranordning och forfarande for dess framstellning

Country Status (6)

Country Link
US (1) US4087834A ( )
JP (1) JPS52126181A ( )
DE (1) DE2712114C2 ( )
FR (1) FR2356279A1 ( )
GB (1) GB1579938A ( )
SE (1) SE427884B ( )

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4812892A (en) * 1978-03-30 1989-03-14 Siemens Aktiengesellschaft Light controllable thyristors
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
US4261000A (en) * 1980-05-23 1981-04-07 General Electric Company High voltage semiconductor device having an improved dv/dt capability
IE54111B1 (en) * 1982-03-11 1989-06-21 Westinghouse Electric Corp Laser treatment of thyristor to provide overvoltage self-protection
JPS594075A (ja) * 1982-06-30 1984-01-10 Toshiba Corp サイリスタ
US4555845A (en) * 1982-10-13 1985-12-03 Westinghouse Electric Corp. Temperature stable self-protected thyristor and method of producing
DE3240564A1 (de) * 1982-11-03 1984-05-03 Licentia Patent-Verwaltungs-Gmbh Steuerbares halbleiterschaltelement
IE840248L (en) * 1983-02-18 1984-08-18 Westinghouse Electric Corp Light activated power transistor
US4514898A (en) * 1983-02-18 1985-05-07 Westinghouse Electric Corp. Method of making a self protected thyristor
US4516315A (en) * 1983-05-09 1985-05-14 Westinghouse Electric Corp. Method of making a self-protected thyristor
EP0129702B1 (en) * 1983-05-26 1987-08-05 General Electric Company Voltage breakover protected thyristor having field-containing layer in avalanche voltage breakover zone
CA1272811A (en) * 1985-04-24 1990-08-14 Hitachi, Ltd. Semiconductor device of overvoltage self-protection type
EP0320738A3 (de) * 1987-12-17 1991-02-06 Siemens Aktiengesellschaft Überkopfzündfester Thyristor
DE102014009046A1 (de) 2014-06-18 2015-12-24 Voswinkel Entwicklungs- Und Verwaltungs-Gmbh & Co. Kg Kupplungsteil für eine Schnellkupplung für Hochdruckhydraulikleitungen
DE102014009063B4 (de) 2014-06-18 2020-04-09 U.M. Gewerbeimmobilien Gmbh & Co. Kg Kupplungsteil für eine Schnellkupplung für Hochdruckhydraulikleitungen
DE102014009044B4 (de) 2014-06-18 2020-04-09 U.M. Gewerbeimmobilien Gmbh & Co. Kg Kupplungsteil für eine Schnellkupplung für Hochdruckhydraulikleitungen

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1112301A (en) * 1964-07-27 1968-05-01 Gen Electric Controlled rectifier with improved turn-on and turn-off characteristics
DE1564255A1 (de) * 1966-04-09 1969-09-25 Licentia Gmbh Halbleiterbauelement
GB1107899A (en) * 1966-04-15 1968-03-27 Westinghouse Brake & Signal Semiconductor controllable rectifier devices
US3440501A (en) * 1967-02-02 1969-04-22 Gen Electric Double-triggering semiconductor controlled rectifier
DE1614576A1 (de) * 1967-08-05 1970-10-29 Siemens Ag Photothyristor und Verfahren zu seiner Herstellung
US3486088A (en) * 1968-05-22 1969-12-23 Nat Electronics Inc Regenerative gate thyristor construction
US3622845A (en) * 1969-05-01 1971-11-23 Gen Electric Scr with amplified emitter gate
BE758745A (fr) * 1969-11-10 1971-05-10 Westinghouse Electric Corp Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs
JPS508315B1 ( ) * 1970-02-20 1975-04-03
USRE27440E (en) 1970-10-27 1972-07-18 Semiconductor rectifier with improved turn-on and turn-off characteristics
DE2141627C3 (de) * 1971-08-19 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US3922774A (en) * 1972-05-01 1975-12-02 Communications Satellite Corp Tantalum pentoxide anti-reflective coating
US3872493A (en) * 1972-08-25 1975-03-18 Westinghouse Electric Corp Selective irradiation of junctioned semiconductor devices
US3893153A (en) * 1974-01-10 1975-07-01 Westinghouse Electric Corp Light activated thyristor with high di/dt capability
CH567803A5 ( ) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
DE2407696C3 (de) * 1974-02-18 1979-02-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor

Also Published As

Publication number Publication date
SE427884B (sv) 1983-05-09
GB1579938A (en) 1980-11-26
FR2356279A1 (fr) 1978-01-20
DE2712114C2 (de) 1985-05-15
FR2356279B1 ( ) 1983-07-01
JPS52126181A (en) 1977-10-22
JPS5643665B2 ( ) 1981-10-14
US4087834A (en) 1978-05-02
DE2712114A1 (de) 1977-10-06

Similar Documents

Publication Publication Date Title
SE7703219L (sv) Sjelvskyddande halvledaranordning
Hefner et al. A performance trade-off for the insulated gate bipolar transistor: Buffer layer versus base lifetime reduction
SE7906288L (sv) Felteffekttransistor med isolerad styrelektrod
JPS5598872A (en) Semiconductor device
SE7704360L (sv) Sjelvskyddad halvledaranordning
IE820142L (en) Semiconductor device having a safety device
SE8203432L (sv) Tvapoligt overstromsskydd
JPS5380982A (en) Thyristor
GB983266A (en) Semiconductor switching devices
JPS5348487A (en) Semiconductor device
UST964009I4 (en) High voltage semiconductor structure
GB1102836A (en) Multi-junction semi-conductor elements
GB1327298A (en) Insulated gate-field-effect transistor with variable gain
JPS53141585A (en) Manufacture of insulating gate field effect type semiconductor device
SU285707A1 ( )
JPS5418683A (en) Manufacture of semiconductor device
JPS5382277A (en) Schottky gate field effect transistor
JPS5577177A (en) Mos type semiconductor device
JPS5567160A (en) Semiconductor memory storage
JPS5353983A (en) Semiconductor non-volatile memory device
JPS5734360A (en) Semiconductor device
FR2335055A1 (fr) Dispositif semi-conducteur integre comportant une diode de protection contre les surtensions, et procede de fabrication d'un tel dispositif
JPS52133761A (en) Integrated circuit
JPS5394776A (en) Nonvolatile semiconductor memory device
JPS5414677A (en) Semiconductor device

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 7703219-1

Effective date: 19911009

Format of ref document f/p: F