JPS5414677A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5414677A
JPS5414677A JP7987377A JP7987377A JPS5414677A JP S5414677 A JPS5414677 A JP S5414677A JP 7987377 A JP7987377 A JP 7987377A JP 7987377 A JP7987377 A JP 7987377A JP S5414677 A JPS5414677 A JP S5414677A
Authority
JP
Japan
Prior art keywords
junction
semiconductor device
reliability
preventing
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7987377A
Other languages
Japanese (ja)
Inventor
Manabu Matsuzawa
Takeshi Uryu
Yoshio Nonaka
Kohei Yamada
Koichiro Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7987377A priority Critical patent/JPS5414677A/en
Publication of JPS5414677A publication Critical patent/JPS5414677A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the reliability with the dielectric strength made high, by preventing an inversion layer from being generated at the low-impurity density side of a PN junction by providing a channel stopper near the moat groove of the edge of the PN junction or mesa part.
JP7987377A 1977-07-06 1977-07-06 Semiconductor device Pending JPS5414677A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7987377A JPS5414677A (en) 1977-07-06 1977-07-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7987377A JPS5414677A (en) 1977-07-06 1977-07-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5414677A true JPS5414677A (en) 1979-02-03

Family

ID=13702330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7987377A Pending JPS5414677A (en) 1977-07-06 1977-07-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5414677A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130159A (en) * 1979-03-30 1980-10-08 Hitachi Ltd High withstand voltage semiconductor device and fabricating method of the same
JPS56126968A (en) * 1980-03-10 1981-10-05 Mitsubishi Electric Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130159A (en) * 1979-03-30 1980-10-08 Hitachi Ltd High withstand voltage semiconductor device and fabricating method of the same
JPS56126968A (en) * 1980-03-10 1981-10-05 Mitsubishi Electric Corp Semiconductor device
JPS6146066B2 (en) * 1980-03-10 1986-10-11 Mitsubishi Electric Corp

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