DD118336A1 - SEMICONDUCTOR ARRANGEMENT, PARTICULARLY SEMICONDUCTOR DIODE WITH IMPROVED TRANSMISSION LINE - Google Patents

SEMICONDUCTOR ARRANGEMENT, PARTICULARLY SEMICONDUCTOR DIODE WITH IMPROVED TRANSMISSION LINE

Info

Publication number
DD118336A1
DD118336A1 DD18543675A DD18543675A DD118336A1 DD 118336 A1 DD118336 A1 DD 118336A1 DD 18543675 A DD18543675 A DD 18543675A DD 18543675 A DD18543675 A DD 18543675A DD 118336 A1 DD118336 A1 DD 118336A1
Authority
DD
German Democratic Republic
Prior art keywords
semiconductor
transmission line
improved transmission
arrangement
diode
Prior art date
Application number
DD18543675A
Other languages
German (de)
Inventor
Gert Beister
Michael Haubold
Gerfried Heise
Klaus Rogge
Original Assignee
Gert Beister
Michael Haubold
Gerfried Heise
Klaus Rogge
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gert Beister, Michael Haubold, Gerfried Heise, Klaus Rogge filed Critical Gert Beister
Priority to DD18543675A priority Critical patent/DD118336A1/en
Priority to DE19762603935 priority patent/DE2603935A1/en
Publication of DD118336A1 publication Critical patent/DD118336A1/en
Priority to IT4883576A priority patent/IT1058060B/en
Priority to CS226276A priority patent/CS201113B1/en
Priority to FR7610880A priority patent/FR2308207A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H01L29/885—Esaki diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DD18543675A 1975-04-15 1975-04-15 SEMICONDUCTOR ARRANGEMENT, PARTICULARLY SEMICONDUCTOR DIODE WITH IMPROVED TRANSMISSION LINE DD118336A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DD18543675A DD118336A1 (en) 1975-04-15 1975-04-15 SEMICONDUCTOR ARRANGEMENT, PARTICULARLY SEMICONDUCTOR DIODE WITH IMPROVED TRANSMISSION LINE
DE19762603935 DE2603935A1 (en) 1975-04-15 1976-02-03 SEMI-CONDUCTOR ARRANGEMENT, IN PARTICULAR SEMICONDUCTOR DIODE WITH IMPROVED TRANSMISSION CHARACTERISTIC
IT4883576A IT1058060B (en) 1975-04-15 1976-04-01 IMPROVEMENT IN SEMICONDUCTOR DEVICES
CS226276A CS201113B1 (en) 1975-04-15 1976-04-06 Semiconductor device particularly the semiconductor diode with ammeliorated permeability characteristics
FR7610880A FR2308207A1 (en) 1975-04-15 1976-04-13 Semiconductor diode for rectifier or radiation source - has forward bias volts reduced by having NPN or PNP structure of given doping

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD18543675A DD118336A1 (en) 1975-04-15 1975-04-15 SEMICONDUCTOR ARRANGEMENT, PARTICULARLY SEMICONDUCTOR DIODE WITH IMPROVED TRANSMISSION LINE

Publications (1)

Publication Number Publication Date
DD118336A1 true DD118336A1 (en) 1976-02-20

Family

ID=5499938

Family Applications (1)

Application Number Title Priority Date Filing Date
DD18543675A DD118336A1 (en) 1975-04-15 1975-04-15 SEMICONDUCTOR ARRANGEMENT, PARTICULARLY SEMICONDUCTOR DIODE WITH IMPROVED TRANSMISSION LINE

Country Status (5)

Country Link
CS (1) CS201113B1 (en)
DD (1) DD118336A1 (en)
DE (1) DE2603935A1 (en)
FR (1) FR2308207A1 (en)
IT (1) IT1058060B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2719457A1 (en) * 1977-04-30 1978-11-02 California Linear Circuits Inc Ion:implanted pn junction - has thin recombination layer of dopant concentration intermediate that of two junction regions

Also Published As

Publication number Publication date
FR2308207A1 (en) 1976-11-12
IT1058060B (en) 1982-04-10
FR2308207B3 (en) 1979-01-05
CS201113B1 (en) 1980-10-31
DE2603935A1 (en) 1976-10-28

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