DD118336A1 - Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinie - Google Patents
Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinieInfo
- Publication number
- DD118336A1 DD118336A1 DD18543675A DD18543675A DD118336A1 DD 118336 A1 DD118336 A1 DD 118336A1 DD 18543675 A DD18543675 A DD 18543675A DD 18543675 A DD18543675 A DD 18543675A DD 118336 A1 DD118336 A1 DD 118336A1
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- semiconductor
- transmission line
- improved transmission
- arrangement
- diode
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 230000005540 biological transmission Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
- H01L29/885—Esaki diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DD18543675A DD118336A1 (de) | 1975-04-15 | 1975-04-15 | Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinie |
DE19762603935 DE2603935A1 (de) | 1975-04-15 | 1976-02-03 | Halbleiteranordnung, insbesondere halbleiterdiode mit verbesserter durchlasskennlinie |
IT4883576A IT1058060B (it) | 1975-04-15 | 1976-04-01 | Perfezionamento nei dispositivi a semiconduttori |
CS226276A CS201113B1 (en) | 1975-04-15 | 1976-04-06 | Semiconductor device particularly the semiconductor diode with ammeliorated permeability characteristics |
FR7610880A FR2308207A1 (fr) | 1975-04-15 | 1976-04-13 | Element semiconducteur, en particulier diode semiconductrice a caracteristique de conduction amelioree |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DD18543675A DD118336A1 (de) | 1975-04-15 | 1975-04-15 | Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinie |
Publications (1)
Publication Number | Publication Date |
---|---|
DD118336A1 true DD118336A1 (de) | 1976-02-20 |
Family
ID=5499938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DD18543675A DD118336A1 (de) | 1975-04-15 | 1975-04-15 | Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinie |
Country Status (5)
Country | Link |
---|---|
CS (1) | CS201113B1 (de) |
DD (1) | DD118336A1 (de) |
DE (1) | DE2603935A1 (de) |
FR (1) | FR2308207A1 (de) |
IT (1) | IT1058060B (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2719457A1 (de) * | 1977-04-30 | 1978-11-02 | California Linear Circuits Inc | Halbleiter-uebergang |
-
1975
- 1975-04-15 DD DD18543675A patent/DD118336A1/de unknown
-
1976
- 1976-02-03 DE DE19762603935 patent/DE2603935A1/de not_active Ceased
- 1976-04-01 IT IT4883576A patent/IT1058060B/it active
- 1976-04-06 CS CS226276A patent/CS201113B1/cs unknown
- 1976-04-13 FR FR7610880A patent/FR2308207A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
CS201113B1 (en) | 1980-10-31 |
FR2308207B3 (de) | 1979-01-05 |
FR2308207A1 (fr) | 1976-11-12 |
DE2603935A1 (de) | 1976-10-28 |
IT1058060B (it) | 1982-04-10 |
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