IE840248L - Light activated power transistor - Google Patents

Light activated power transistor

Info

Publication number
IE840248L
IE840248L IE24884A IE24884A IE840248L IE 840248 L IE840248 L IE 840248L IE 24884 A IE24884 A IE 24884A IE 24884 A IE24884 A IE 24884A IE 840248 L IE840248 L IE 840248L
Authority
IE
Ireland
Prior art keywords
well
light activated
power transistor
activated power
depth
Prior art date
Application number
IE24884A
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IE840248L publication Critical patent/IE840248L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)

Abstract

A light activated thyristor is self protected against an overvoltage by a well 134 formed in a first base region 114, said well being spaced apart from an adjacent emitter region 112. The depth of the well and its shape are chosen so that the forward blocking junction 122 under the well approaches the reverse blocking junction 124 and the depth WN of a second base layer 116 is less than the width of the depletion-layer at the desired breakdown voltage. <IMAGE> [GB2135515A]
IE24884A 1983-02-18 1984-02-02 Light activated power transistor IE840248L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46800483A 1983-02-18 1983-02-18

Publications (1)

Publication Number Publication Date
IE840248L true IE840248L (en) 1984-08-18

Family

ID=23858035

Family Applications (1)

Application Number Title Priority Date Filing Date
IE24884A IE840248L (en) 1983-02-18 1984-02-02 Light activated power transistor

Country Status (8)

Country Link
JP (1) JPS59158560A (en)
BE (1) BE898947A (en)
BR (1) BR8400676A (en)
DE (1) DE3405548A1 (en)
FR (1) FR2541512A1 (en)
GB (1) GB2135515A (en)
IE (1) IE840248L (en)
IN (1) IN159387B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01136369A (en) * 1987-11-21 1989-05-29 Toshiba Corp Manufacture of semiconductor device having overvoltage protective function
JP3155797B2 (en) * 1991-12-26 2001-04-16 株式会社日立製作所 Overvoltage self-protection semiconductor device and semiconductor circuit using the same
DE102013004561B4 (en) * 2013-03-15 2017-05-04 Infineon Technologies Ag A DEVICE FOR RECOGNIZING A POWDER EFFECT AND A METHOD FOR RECOGNIZING A POWDER IMPACT

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508315B1 (en) * 1970-02-20 1975-04-03
DE2238564C3 (en) * 1972-08-04 1981-02-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
US4012761A (en) * 1976-04-19 1977-03-15 General Electric Company Self-protected semiconductor device
CH594989A5 (en) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
DE2747945A1 (en) * 1976-11-01 1978-05-18 Electric Power Res Inst Thyristor with protection against breakdown failure - has two PN functions with central areas parts closer to each other than outer area

Also Published As

Publication number Publication date
GB8402719D0 (en) 1984-03-07
GB2135515A (en) 1984-08-30
BR8400676A (en) 1984-09-25
FR2541512A1 (en) 1984-08-24
JPS59158560A (en) 1984-09-08
BE898947A (en) 1984-08-17
DE3405548A1 (en) 1984-08-23
IN159387B (en) 1987-05-09

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