GB1107899A - Semiconductor controllable rectifier devices - Google Patents

Semiconductor controllable rectifier devices

Info

Publication number
GB1107899A
GB1107899A GB1657666A GB1657666A GB1107899A GB 1107899 A GB1107899 A GB 1107899A GB 1657666 A GB1657666 A GB 1657666A GB 1657666 A GB1657666 A GB 1657666A GB 1107899 A GB1107899 A GB 1107899A
Authority
GB
United Kingdom
Prior art keywords
region
type
semi
gate electrode
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1657666A
Inventor
Clifford Victor Miles
John Mansell Garrett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB1657666A priority Critical patent/GB1107899A/en
Priority to NL6704873A priority patent/NL6704873A/xx
Priority to DE19671639020 priority patent/DE1639020A1/en
Priority to AT354167A priority patent/AT274144B/en
Priority to SE05208/67A priority patent/SE325961B/xx
Publication of GB1107899A publication Critical patent/GB1107899A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,107,899. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. 17 March, 1967 [15 April, 1966], No. 16576/66. Heading H1K. In a semi-conductor controlled rectifier the periphery of the device is chamfered to provide an acute angle in a region 2 of the device between the forward blocking junction 6 and the device edge. The region 2, which carries the gate electrode 7, is of higher resistivity than the two adjacent regions 3, 4 of opposite conductivity type. In the silicon device shown P-type regions 3, 4 are diffused into an N-type wafer 1, the second N-type region 10 being formed by alloying of Au/Sb to the wafer. The cathode 8 is of tungsten. The Au/Sb gate electrode 7 is applied to region 2 through an aperture in the outer region 1, to which an Al/Si anode 9 is bonded.
GB1657666A 1966-04-15 1966-04-15 Semiconductor controllable rectifier devices Expired GB1107899A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB1657666A GB1107899A (en) 1966-04-15 1966-04-15 Semiconductor controllable rectifier devices
NL6704873A NL6704873A (en) 1966-04-15 1967-04-06
DE19671639020 DE1639020A1 (en) 1966-04-15 1967-04-07 Controllable semiconductor rectifier device
AT354167A AT274144B (en) 1966-04-15 1967-04-14 Controllable semiconductor rectifier device
SE05208/67A SE325961B (en) 1966-04-15 1967-04-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1657666A GB1107899A (en) 1966-04-15 1966-04-15 Semiconductor controllable rectifier devices

Publications (1)

Publication Number Publication Date
GB1107899A true GB1107899A (en) 1968-03-27

Family

ID=10079803

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1657666A Expired GB1107899A (en) 1966-04-15 1966-04-15 Semiconductor controllable rectifier devices

Country Status (5)

Country Link
AT (1) AT274144B (en)
DE (1) DE1639020A1 (en)
GB (1) GB1107899A (en)
NL (1) NL6704873A (en)
SE (1) SE325961B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device

Also Published As

Publication number Publication date
AT274144B (en) 1969-09-10
NL6704873A (en) 1967-10-16
DE1639020A1 (en) 1970-05-27
SE325961B (en) 1970-07-13

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