GB1214151A - Improvements in and relating to semiconductor devices - Google Patents

Improvements in and relating to semiconductor devices

Info

Publication number
GB1214151A
GB1214151A GB571767A GB571767A GB1214151A GB 1214151 A GB1214151 A GB 1214151A GB 571767 A GB571767 A GB 571767A GB 571767 A GB571767 A GB 571767A GB 1214151 A GB1214151 A GB 1214151A
Authority
GB
United Kingdom
Prior art keywords
region
depression
wafer
junction
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB571767A
Inventor
John Charles Pritchard
Stephen Cannan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB571767A priority Critical patent/GB1214151A/en
Priority to NL6801503A priority patent/NL6801503A/xx
Priority to DE19681639352 priority patent/DE1639352A1/en
Priority to ES350146A priority patent/ES350146A1/en
Priority to CH166168A priority patent/CH474860A/en
Priority to BE710354D priority patent/BE710354A/xx
Priority to FR1554230D priority patent/FR1554230A/fr
Priority to AT112068A priority patent/AT280352B/en
Publication of GB1214151A publication Critical patent/GB1214151A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,214,151. Semi-conductor devices. ASSOCIATED SEMICONDUCTOR MFGS. Ltd. 5 Feb., 1968 [7 Feb., 1967], No. 5717/67. Heading H1K. A semi-conductor device comprises a semiconductor wafer with at least first, second and third regions 31, 32, 33 of successively opposite conductivity type, the first region 31, which may be annular, underlying a depression 39 in one face of the wafer and the PN junction 36 between the second and third regions having a stepped formation under the first region with its periphery extending to a bevelled surface 45 of the body. The peripheral surface of the wafer is bevelled and the angle between this junction 36 and the surface is between 170 and 180 degrees. Electrodes are connected to the regions. In the embodiment shown in Fig. 3 where the device is a thyristor a further conductivity region 34 exists in the wafer opposite the depression 39, and a further bevel exists at the peripheral surface at an angle of between 15 and 60 degrees with the PN junction 37. The emitter electrode 51 may overlap the second zone 32 in selected areas to provide shorted emitter characteristics. In a further embodiment, Fig. 1, not shown, the depression (9) is annular with the first zone (1) surrounding the depression. In a thyristor of this type the control electrode (23) is connected in the centre of the annulus to the second region. In the manufacture of the silicon device the second region 32 is formed in a composite manner by firstly diffusing gallium to give a relatively deep P region, the depression 39 then being formed by etching or ultrasonic drilling, and secondly diffusing boron to form a narrow width portion of the region particularly under the depression. Electrodes are provided by electroless plating of nickel and gold, and the wafer is soldered, after plating, to a molybdenum disc 56 with an interposed gold-germanium preformed solder disc.
GB571767A 1967-02-07 1967-02-07 Improvements in and relating to semiconductor devices Expired GB1214151A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GB571767A GB1214151A (en) 1967-02-07 1967-02-07 Improvements in and relating to semiconductor devices
NL6801503A NL6801503A (en) 1967-02-07 1968-02-01
DE19681639352 DE1639352A1 (en) 1967-02-07 1968-02-02 Semiconductor device
ES350146A ES350146A1 (en) 1967-02-07 1968-02-05 Improvements in and relating to semiconductor devices
CH166168A CH474860A (en) 1967-02-07 1968-02-05 Semiconductor device and method for making the same
BE710354D BE710354A (en) 1967-02-07 1968-02-05
FR1554230D FR1554230A (en) 1967-02-07 1968-02-06
AT112068A AT280352B (en) 1967-02-07 1968-02-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB571767A GB1214151A (en) 1967-02-07 1967-02-07 Improvements in and relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB1214151A true GB1214151A (en) 1970-12-02

Family

ID=9801315

Family Applications (1)

Application Number Title Priority Date Filing Date
GB571767A Expired GB1214151A (en) 1967-02-07 1967-02-07 Improvements in and relating to semiconductor devices

Country Status (8)

Country Link
AT (1) AT280352B (en)
BE (1) BE710354A (en)
CH (1) CH474860A (en)
DE (1) DE1639352A1 (en)
ES (1) ES350146A1 (en)
FR (1) FR1554230A (en)
GB (1) GB1214151A (en)
NL (1) NL6801503A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2201836A (en) * 1987-02-13 1988-09-07 Marconi Electronic Devices Power semiconductor device
CN113178385A (en) * 2021-03-31 2021-07-27 青岛惠科微电子有限公司 Chip manufacturing method and device and chip

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (en) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH HIGH BLOCKING VOLTAGE AND METHOD FOR THE PRODUCTION THEREOF
DE3030564A1 (en) * 1980-08-13 1982-03-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Semiconductor device for high inverse voltages - with outer layer of pn junction enclosed by peripheral zone

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2201836A (en) * 1987-02-13 1988-09-07 Marconi Electronic Devices Power semiconductor device
GB2201836B (en) * 1987-02-13 1990-05-09 Marconi Electronic Devices Power semiconductor device
CN113178385A (en) * 2021-03-31 2021-07-27 青岛惠科微电子有限公司 Chip manufacturing method and device and chip
CN113178385B (en) * 2021-03-31 2022-12-23 青岛惠科微电子有限公司 Chip manufacturing method and device and chip

Also Published As

Publication number Publication date
BE710354A (en) 1968-08-05
FR1554230A (en) 1969-01-17
ES350146A1 (en) 1969-04-16
DE1639352A1 (en) 1971-02-04
AT280352B (en) 1970-04-10
NL6801503A (en) 1968-08-02
CH474860A (en) 1969-06-30

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees