ES350146A1 - Improvements in and relating to semiconductor devices - Google Patents
Improvements in and relating to semiconductor devicesInfo
- Publication number
- ES350146A1 ES350146A1 ES350146A ES350146A ES350146A1 ES 350146 A1 ES350146 A1 ES 350146A1 ES 350146 A ES350146 A ES 350146A ES 350146 A ES350146 A ES 350146A ES 350146 A1 ES350146 A1 ES 350146A1
- Authority
- ES
- Spain
- Prior art keywords
- region
- depression
- wafer
- junction
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 238000005553 drilling Methods 0.000 abstract 1
- 238000007772 electroless plating Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A semi-conductor device comprises a semiconductor wafer with at least first, second and third regions 31, 32, 33 of successively opposite conductivity type, the first region 31, which may be annular, underlying a depression 39 in one face of the wafer and the PN junction 36 between the second and third regions having a stepped formation under the first region with its periphery extending to a bevelled surface 45 of the body. The peripheral surface of the wafer is bevelled and the angle between this junction 36 and the surface is between 170 and 180 degrees. Electrodes are connected to the regions. In the embodiment shown in Fig. 3 where the device is a thyristor a further conductivity region 34 exists in the wafer opposite the depression 39, and a further bevel exists at the peripheral surface at an angle of between 15 and 60 degrees with the PN junction 37. The emitter electrode 51 may overlap the second zone 32 in selected areas to provide shorted emitter characteristics. In a further embodiment, Fig. 1, not shown, the depression (9) is annular with the first zone (1) surrounding the depression. In a thyristor of this type the control electrode (23) is connected in the centre of the annulus to the second region. In the manufacture of the silicon device the second region 32 is formed in a composite manner by firstly diffusing gallium to give a relatively deep P region, the depression 39 then being formed by etching or ultrasonic drilling, and secondly diffusing boron to form a narrow width portion of the region particularly under the depression. Electrodes are provided by electroless plating of nickel and gold, and the wafer is soldered, after plating, to a molybdenum disc 56 with an interposed gold-germanium preformed solder disc.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB571767A GB1214151A (en) | 1967-02-07 | 1967-02-07 | Improvements in and relating to semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES350146A1 true ES350146A1 (en) | 1969-04-16 |
Family
ID=9801315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES350146A Expired ES350146A1 (en) | 1967-02-07 | 1968-02-05 | Improvements in and relating to semiconductor devices |
Country Status (8)
| Country | Link |
|---|---|
| AT (1) | AT280352B (en) |
| BE (1) | BE710354A (en) |
| CH (1) | CH474860A (en) |
| DE (1) | DE1639352A1 (en) |
| ES (1) | ES350146A1 (en) |
| FR (1) | FR1554230A (en) |
| GB (1) | GB1214151A (en) |
| NL (1) | NL6801503A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3017313A1 (en) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | THYRISTOR WITH HIGH BLOCKING VOLTAGE AND METHOD FOR THE PRODUCTION THEREOF |
| DE3030564A1 (en) * | 1980-08-13 | 1982-03-11 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Semiconductor device for high inverse voltages - with outer layer of pn junction enclosed by peripheral zone |
| GB8703405D0 (en) * | 1987-02-13 | 1987-03-18 | Marconi Electronic Devices | Power semi-conductor device |
| CN113178385B (en) * | 2021-03-31 | 2022-12-23 | 青岛惠科微电子有限公司 | Chip manufacturing method and device and chip |
-
1967
- 1967-02-07 GB GB571767A patent/GB1214151A/en not_active Expired
-
1968
- 1968-02-01 NL NL6801503A patent/NL6801503A/xx unknown
- 1968-02-02 DE DE19681639352 patent/DE1639352A1/en active Pending
- 1968-02-05 ES ES350146A patent/ES350146A1/en not_active Expired
- 1968-02-05 CH CH166168A patent/CH474860A/en not_active IP Right Cessation
- 1968-02-05 BE BE710354D patent/BE710354A/xx unknown
- 1968-02-06 FR FR1554230D patent/FR1554230A/fr not_active Expired
- 1968-02-06 AT AT112068A patent/AT280352B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| AT280352B (en) | 1970-04-10 |
| FR1554230A (en) | 1969-01-17 |
| DE1639352A1 (en) | 1971-02-04 |
| CH474860A (en) | 1969-06-30 |
| NL6801503A (en) | 1968-08-02 |
| BE710354A (en) | 1968-08-05 |
| GB1214151A (en) | 1970-12-02 |
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