AT280352B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
AT280352B
AT280352B AT112068A AT112068A AT280352B AT 280352 B AT280352 B AT 280352B AT 112068 A AT112068 A AT 112068A AT 112068 A AT112068 A AT 112068A AT 280352 B AT280352 B AT 280352B
Authority
AT
Austria
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
AT112068A
Other languages
German (de)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT280352B publication Critical patent/AT280352B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
AT112068A 1967-02-07 1968-02-06 Semiconductor device AT280352B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB571767A GB1214151A (en) 1967-02-07 1967-02-07 Improvements in and relating to semiconductor devices

Publications (1)

Publication Number Publication Date
AT280352B true AT280352B (en) 1970-04-10

Family

ID=9801315

Family Applications (1)

Application Number Title Priority Date Filing Date
AT112068A AT280352B (en) 1967-02-07 1968-02-06 Semiconductor device

Country Status (8)

Country Link
AT (1) AT280352B (en)
BE (1) BE710354A (en)
CH (1) CH474860A (en)
DE (1) DE1639352A1 (en)
ES (1) ES350146A1 (en)
FR (1) FR1554230A (en)
GB (1) GB1214151A (en)
NL (1) NL6801503A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (en) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH HIGH BLOCKING VOLTAGE AND METHOD FOR THE PRODUCTION THEREOF
DE3030564A1 (en) * 1980-08-13 1982-03-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Semiconductor device for high inverse voltages - with outer layer of pn junction enclosed by peripheral zone
GB8703405D0 (en) * 1987-02-13 1987-03-18 Marconi Electronic Devices Power semi-conductor device
CN113178385B (en) * 2021-03-31 2022-12-23 青岛惠科微电子有限公司 Chip manufacturing method and device and chip

Also Published As

Publication number Publication date
ES350146A1 (en) 1969-04-16
FR1554230A (en) 1969-01-17
CH474860A (en) 1969-06-30
NL6801503A (en) 1968-08-02
GB1214151A (en) 1970-12-02
DE1639352A1 (en) 1971-02-04
BE710354A (en) 1968-08-05

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee