BE758745A - Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs - Google Patents

Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs

Info

Publication number
BE758745A
BE758745A BE758745DA BE758745A BE 758745 A BE758745 A BE 758745A BE 758745D A BE758745D A BE 758745DA BE 758745 A BE758745 A BE 758745A
Authority
BE
Belgium
Prior art keywords
relating
semiconductor devices
semiconductor
devices
Prior art date
Application number
Other languages
English (en)
Inventor
W J Bilo
J W Motto
N Ernick
Thorndike Chang Teh New
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE758745A publication Critical patent/BE758745A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
BE758745D 1969-11-10 Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs BE758745A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87535469A 1969-11-10 1969-11-10

Publications (1)

Publication Number Publication Date
BE758745A true BE758745A (fr) 1971-05-10

Family

ID=25365657

Family Applications (1)

Application Number Title Priority Date Filing Date
BE758745D BE758745A (fr) 1969-11-10 Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs

Country Status (3)

Country Link
US (1) US3590346A (fr)
BE (1) BE758745A (fr)
GB (1) GB1330490A (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3800190A (en) * 1970-11-02 1974-03-26 Bbc Brown Boveri & Cie Cooling system for power semiconductor devices
DE2146178C3 (de) * 1971-09-15 1979-09-27 Brown, Boveri & Cie Ag, 6800 Mannheim Thyristor mit Steuerstromverstärkung
US4086612A (en) * 1973-06-12 1978-04-25 Siemens Aktiengesellschaft Thyristor
DE2356906A1 (de) * 1973-11-14 1975-05-22 Siemens Ag Thyristor
FR2254880B1 (fr) * 1973-12-12 1978-11-10 Alsthom Cgee
JPS5721335Y2 (fr) * 1974-02-22 1982-05-08
FR2270676B1 (fr) * 1974-02-22 1976-12-03 Thomson Csf
JPS50117377A (fr) * 1974-02-28 1975-09-13
JPS5927108B2 (ja) * 1975-02-07 1984-07-03 株式会社日立製作所 半導体制御整流装置
US4238761A (en) * 1975-05-27 1980-12-09 Westinghouse Electric Corp. Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode
US4217504A (en) * 1975-08-04 1980-08-12 Licentia-Patent Verwaltungs Gmbh Semiconductor switch with thyristors
DE2534703C3 (de) * 1975-08-04 1980-03-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
DE2607678A1 (de) * 1976-02-25 1977-09-01 Siemens Ag Anordnung zum herabsetzen der freiwerdezeit eines thyristors
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
US4012761A (en) * 1976-04-19 1977-03-15 General Electric Company Self-protected semiconductor device
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
US4891683A (en) * 1977-05-02 1990-01-02 Advanced Micro Devices, Inc. Integrated SCR current sourcing sinking device
JPS5443686A (en) * 1977-09-14 1979-04-06 Hitachi Ltd Thyristor
DE2801722A1 (de) * 1978-01-16 1979-07-19 Siemens Ag Schaltungsanordnung zum herabsetzen der freiwerdezeit eines thyristors
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
JPS6019147B2 (ja) * 1979-01-24 1985-05-14 株式会社日立製作所 ゲ−ト・タ−ン・オフ・サイリスタ
DE3112940A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb
DE3374740D1 (en) * 1982-11-15 1988-01-07 Toshiba Kk Radiation-controllable thyristor
US4604638A (en) * 1983-05-17 1986-08-05 Kabushiki Kaisha Toshiba Five layer semiconductor device with separate insulated turn-on and turn-off gates
AR240631A1 (es) * 1986-06-06 1990-06-30 Siemens Ag Disposicion de circuito para proteger circuitos electronicos de interfase de circuitos de conexion de abonado de una red telefonica tiempo-multiplex digital
DE19947036C1 (de) * 1999-09-30 2001-05-17 Siemens Ag Thyristoranordnung mit Freiwerdeschutz

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL297821A (fr) * 1962-10-08
US3331000A (en) * 1963-10-18 1967-07-11 Gen Electric Gate turn off semiconductor switch having a composite gate region with different impurity concentrations
US3699406A (en) * 1963-12-26 1972-10-17 Gen Electric Semiconductor gate-controlled pnpn switch
US3427512A (en) * 1965-11-26 1969-02-11 Gen Electric Semiconductor low voltage switch
US3527963A (en) * 1967-01-31 1970-09-08 Nippon Electric Co Ac current switching circuit including bidirectional and unidirectional thyristors

Also Published As

Publication number Publication date
US3590346A (en) 1971-06-29
GB1330490A (en) 1973-09-19

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Legal Events

Date Code Title Description
RE20 Patent expired

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19901110