SE7612070L - Schotty-barrier-halvledare - Google Patents

Schotty-barrier-halvledare

Info

Publication number
SE7612070L
SE7612070L SE7612070A SE7612070A SE7612070L SE 7612070 L SE7612070 L SE 7612070L SE 7612070 A SE7612070 A SE 7612070A SE 7612070 A SE7612070 A SE 7612070A SE 7612070 L SE7612070 L SE 7612070L
Authority
SE
Sweden
Prior art keywords
barrier metal
hole
flange
edge
semiconductor substrate
Prior art date
Application number
SE7612070A
Other languages
English (en)
Other versions
SE423761B (sv
Inventor
A Nara
H Kondo
T Fujiwara
H Ikegawa
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of SE7612070L publication Critical patent/SE7612070L/sv
Publication of SE423761B publication Critical patent/SE423761B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
SE7612070A 1975-10-29 1976-10-29 Schottky- barrierhalvledaranordning och forfarande for dess framstellning SE423761B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50130269A JPS5254369A (en) 1975-10-29 1975-10-29 Schottky barrier semiconductor device

Publications (2)

Publication Number Publication Date
SE7612070L true SE7612070L (sv) 1977-04-30
SE423761B SE423761B (sv) 1982-05-24

Family

ID=15030243

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7612070A SE423761B (sv) 1975-10-29 1976-10-29 Schottky- barrierhalvledaranordning och forfarande for dess framstellning

Country Status (4)

Country Link
US (1) US4223327A (sv)
JP (1) JPS5254369A (sv)
DE (1) DE2649738C2 (sv)
SE (1) SE423761B (sv)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1601059A (en) * 1978-05-31 1981-10-21 Secr Defence Fet devices and their fabrication
NL8202009A (nl) * 1982-05-14 1983-12-01 Philips Nv Werkwijze voor de vervaardiging van fijn-gestructureerde metaalpatronen op metaal- of halfgeleider oppervlak.
US4638551A (en) * 1982-09-24 1987-01-27 General Instrument Corporation Schottky barrier device and method of manufacture
US4742377A (en) * 1985-02-21 1988-05-03 General Instrument Corporation Schottky barrier device with doped composite guard ring
US6303969B1 (en) * 1998-05-01 2001-10-16 Allen Tan Schottky diode with dielectric trench
JP3180776B2 (ja) * 1998-09-22 2001-06-25 日本電気株式会社 電界効果型トランジスタ
GB0129450D0 (en) * 2001-12-08 2002-01-30 Koninkl Philips Electronics Nv Trenched semiconductor devices and their manufacture
US20060076639A1 (en) * 2004-10-13 2006-04-13 Lypen William J Schottky diodes and methods of making the same
US8907408B2 (en) 2012-03-26 2014-12-09 Infineon Technologies Austria Ag Stress-reduced field-effect semiconductor device and method for forming therefor
KR20200045471A (ko) 2017-08-31 2020-05-04 소니 주식회사 통신 장치 및 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1031837A (en) * 1963-08-01 1966-06-02 Standard Telephones Cables Ltd Improvements in or relating to metal plating
US3349297A (en) * 1964-06-23 1967-10-24 Bell Telephone Labor Inc Surface barrier semiconductor translating device
JPS4733176B1 (sv) * 1967-01-11 1972-08-23
GB1207093A (en) * 1968-04-05 1970-09-30 Matsushita Electronics Corp Improvements in or relating to schottky barrier semiconductor devices
BE736650A (sv) * 1968-08-01 1969-12-31
GB1265018A (sv) * 1968-08-27 1972-03-01
NL6816449A (sv) * 1968-11-19 1970-05-21
US3764865A (en) * 1970-03-17 1973-10-09 Rca Corp Semiconductor devices having closely spaced contacts
CA903928A (en) * 1971-03-11 1972-06-27 A. Hoare Raymond Pit form barrier diode
JPS493229A (sv) * 1972-04-22 1974-01-12
FR2329172A5 (fr) * 1973-07-03 1977-05-20 Thomson Csf Procede de fabrication d'une diode schottky et diode fabriquee selon un tel procede
US3999281A (en) * 1976-01-16 1976-12-28 The United States Of America As Represented By The Secretary Of The Air Force Method for fabricating a gridded Schottky barrier field effect transistor

Also Published As

Publication number Publication date
SE423761B (sv) 1982-05-24
US4223327A (en) 1980-09-16
DE2649738C2 (de) 1983-08-25
JPS5254369A (en) 1977-05-02
DE2649738A1 (de) 1977-05-12

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