SE7608314L - SEMICONDUCTOR ORGAN WITH AN ACTIVE AREA OF AMORFT SILICONE - Google Patents
SEMICONDUCTOR ORGAN WITH AN ACTIVE AREA OF AMORFT SILICONEInfo
- Publication number
- SE7608314L SE7608314L SE7608314A SE7608314A SE7608314L SE 7608314 L SE7608314 L SE 7608314L SE 7608314 A SE7608314 A SE 7608314A SE 7608314 A SE7608314 A SE 7608314A SE 7608314 L SE7608314 L SE 7608314L
- Authority
- SE
- Sweden
- Prior art keywords
- amorft
- silicone
- active area
- amorphous silicon
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 210000000056 organ Anatomy 0.000 title 1
- 229920001296 polysiloxane Polymers 0.000 title 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 238000004347 surface barrier Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Abstract
A SEMICONDUCTOR DEVICE HAVING AN AMORPHOUS SILICON ACTIVE REGION A semiconductor device including a body of amorphous silicon fabricated by a glow discharge in silane and a metallic region on a surface of the body of amorphous silicon providing a surface barrier junction at the interface of the region and the body which is capable of generating a space charge region in the body of amorphous silicon.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59958875A | 1975-07-28 | 1975-07-28 | |
US65926876A | 1976-02-19 | 1976-02-19 | |
KR7601783A KR810001312B1 (en) | 1975-07-28 | 1976-07-22 | Semiconductor device having a body of amorphous silicon |
KR1019800002296A KR810001314B1 (en) | 1975-07-28 | 1980-06-11 | Semiconductor device having a body of amorphous silicon |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7608314L true SE7608314L (en) | 1977-01-29 |
SE407870B SE407870B (en) | 1979-04-23 |
Family
ID=27482789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7608314A SE407870B (en) | 1975-07-28 | 1976-07-21 | SEMICONDUCTOR ORGANIZATION INCLUDING AN ACTIVE AREA OF AMORPHETIC SILICONE AND METHODS FOR ITS MANUFACTURING |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS5216990A (en) |
AU (1) | AU503228B2 (en) |
CA (1) | CA1091361A (en) |
DE (1) | DE2632987C3 (en) |
FR (1) | FR2304180A1 (en) |
GB (1) | GB1545897A (en) |
HK (1) | HK49683A (en) |
IT (1) | IT1062510B (en) |
NL (1) | NL185884C (en) |
SE (1) | SE407870B (en) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4196438A (en) | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
EG13199A (en) * | 1977-03-28 | 1981-06-30 | Rca Corp | A photo volataic device having increased absorption efficiency |
DE2715471A1 (en) * | 1977-04-06 | 1978-10-19 | Siemens Ag | Solar cell with semiconductor layer - vacuum deposited on a reflecting substrate |
FR2394173A1 (en) * | 1977-06-06 | 1979-01-05 | Thomson Csf | METHOD OF MANUFACTURING ELECTRONIC DEVICES WHICH INCLUDE A THIN LAYER OF AMORPHIC SILICON AND AN ELECTRONIC DEVICE OBTAINED BY SUCH A PROCESS |
US4117506A (en) * | 1977-07-28 | 1978-09-26 | Rca Corporation | Amorphous silicon photovoltaic device having an insulating layer |
DE2746967C2 (en) * | 1977-10-19 | 1981-09-24 | Siemens AG, 1000 Berlin und 8000 München | Electrophotographic recording drum |
AU530905B2 (en) * | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
JPS54109762A (en) * | 1978-02-16 | 1979-08-28 | Sony Corp | Semiconductor device |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
DE2954732C2 (en) * | 1978-04-20 | 1996-06-27 | Canon Kk | Signal processing unit with photoelectric conversion |
DE2915859C2 (en) | 1978-04-20 | 1995-06-29 | Canon Kk | Photoelectric converter device |
US4167015A (en) * | 1978-04-24 | 1979-09-04 | Rca Corporation | Cermet layer for amorphous silicon solar cells |
US4162505A (en) * | 1978-04-24 | 1979-07-24 | Rca Corporation | Inverted amorphous silicon solar cell utilizing cermet layers |
US4163677A (en) * | 1978-04-28 | 1979-08-07 | Rca Corporation | Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier |
JPS54145537A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Preparation of electrophotographic image forming material |
JPS54150995A (en) * | 1978-05-19 | 1979-11-27 | Hitachi Ltd | Photo detector |
JPS54109390A (en) * | 1978-05-22 | 1979-08-27 | Yamazaki Shunpei | Photovoltaic force generating semiconductor and method of fabricating same |
JPS54160568A (en) * | 1978-06-09 | 1979-12-19 | Anelva Corp | Thin film forming equipment for discharge chemical reaction |
JPS5511330A (en) * | 1978-07-08 | 1980-01-26 | Shunpei Yamazaki | Semiconductor device having continuous junction |
US4166919A (en) * | 1978-09-25 | 1979-09-04 | Rca Corporation | Amorphous silicon solar cell allowing infrared transmission |
JPS5821827B2 (en) * | 1979-02-09 | 1983-05-04 | 三洋電機株式会社 | photovoltaic device |
JPS5511397A (en) * | 1979-06-05 | 1980-01-26 | Shunpei Yamazaki | Semiconductor device with continuous connection and its production method |
JPS5650035A (en) * | 1979-09-28 | 1981-05-07 | Sony Corp | Target of image pick-up tube |
JPS56132653A (en) * | 1980-03-21 | 1981-10-17 | Seiko Epson Corp | Electronic desk top calculator with amorphous solar cell |
JPS56133883A (en) * | 1980-03-24 | 1981-10-20 | Seisan Gijutsu Shinko Kyokai | Photoelectric transducer |
JPS56138962A (en) * | 1980-03-31 | 1981-10-29 | Canon Inc | Photoelectric converter |
US4400409A (en) | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
JPS5721876A (en) * | 1980-07-14 | 1982-02-04 | Canon Inc | Photosensor |
JPS5756036A (en) * | 1980-09-20 | 1982-04-03 | Mitsubishi Electric Corp | Plasma chemical vapor phase reactor |
JPS57108782A (en) * | 1980-12-26 | 1982-07-06 | Seiko Epson Corp | Detecting element of radiant rays |
JPS57134218A (en) * | 1981-02-13 | 1982-08-19 | Riken Corp | Manufacture of coupling main body |
JPS5787275A (en) * | 1981-09-12 | 1982-05-31 | Canon Inc | Information processor |
JPS5898915A (en) * | 1981-12-09 | 1983-06-13 | Konishiroku Photo Ind Co Ltd | Amorphous silicon semiconductor substrate |
JPS57184257A (en) * | 1982-04-26 | 1982-11-12 | Shunpei Yamazaki | Photoelectric converter |
JPS59197127A (en) * | 1984-03-16 | 1984-11-08 | Shunpei Yamazaki | Manufacture of semiconductor device |
JPS6197863U (en) * | 1985-12-05 | 1986-06-23 | ||
JPH05121339A (en) * | 1992-03-26 | 1993-05-18 | Semiconductor Energy Lab Co Ltd | Apparatus for forming coating film |
JPH0653137A (en) * | 1992-07-31 | 1994-02-25 | Canon Inc | Formation of amorphous silicon hydride film |
JPH0794431A (en) * | 1993-04-23 | 1995-04-07 | Canon Inc | Substrate for amorphous semiconductor, amorphous semiconductor substrate having the same, and manufacture of amorphous semiconductor substrate |
JPH06326024A (en) * | 1993-05-10 | 1994-11-25 | Canon Inc | Manufacture of semiconductor substrate, and method of depositing amorphous film |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3462311A (en) * | 1966-05-20 | 1969-08-19 | Globe Union Inc | Semiconductor device having improved resistance to radiation damage |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
-
1976
- 1976-07-05 IT IT25040/76A patent/IT1062510B/en active
- 1976-07-05 AU AU15558/76A patent/AU503228B2/en not_active Expired
- 1976-07-06 GB GB28052/76A patent/GB1545897A/en not_active Expired
- 1976-07-08 NL NL7607571A patent/NL185884C/en not_active IP Right Cessation
- 1976-07-08 CA CA256,565A patent/CA1091361A/en not_active Expired
- 1976-07-21 SE SE7608314A patent/SE407870B/en not_active IP Right Cessation
- 1976-07-22 DE DE2632987A patent/DE2632987C3/en not_active Expired - Lifetime
- 1976-07-26 FR FR7622688A patent/FR2304180A1/en active Granted
- 1976-07-27 JP JP51090124A patent/JPS5216990A/en active Granted
-
1983
- 1983-11-03 HK HK496/83A patent/HK49683A/en unknown
Also Published As
Publication number | Publication date |
---|---|
NL7607571A (en) | 1977-02-01 |
FR2304180A1 (en) | 1976-10-08 |
SE407870B (en) | 1979-04-23 |
HK49683A (en) | 1983-11-11 |
AU1555876A (en) | 1978-01-12 |
IT1062510B (en) | 1984-10-20 |
JPS5216990A (en) | 1977-02-08 |
GB1545897A (en) | 1979-05-16 |
FR2304180B1 (en) | 1982-07-30 |
AU503228B2 (en) | 1979-08-30 |
DE2632987C3 (en) | 1993-12-02 |
CA1091361A (en) | 1980-12-09 |
NL185884C (en) | 1996-01-23 |
JPS5337718B2 (en) | 1978-10-11 |
DE2632987C2 (en) | 1987-02-12 |
NL185884B (en) | 1990-03-01 |
DE2632987A1 (en) | 1977-02-10 |
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