SE456291B - Vertikal mosfet-anordning innefattande en over kollektoromradet belegen skermelektrod for minimering av miller- kapacitansen och stromfortrengningen - Google Patents
Vertikal mosfet-anordning innefattande en over kollektoromradet belegen skermelektrod for minimering av miller- kapacitansen och stromfortrengningenInfo
- Publication number
- SE456291B SE456291B SE8100148A SE8100148A SE456291B SE 456291 B SE456291 B SE 456291B SE 8100148 A SE8100148 A SE 8100148A SE 8100148 A SE8100148 A SE 8100148A SE 456291 B SE456291 B SE 456291B
- Authority
- SE
- Sweden
- Prior art keywords
- collector
- electrode
- emitter
- area
- collector area
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 7
- 210000000746 body region Anatomy 0.000 claims description 5
- 238000010276 construction Methods 0.000 description 4
- 238000001894 space-charge-limited current method Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12371580A | 1980-02-22 | 1980-02-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE8100148L SE8100148L (sv) | 1981-08-23 |
| SE456291B true SE456291B (sv) | 1988-09-19 |
Family
ID=22410424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8100148A SE456291B (sv) | 1980-02-22 | 1981-01-13 | Vertikal mosfet-anordning innefattande en over kollektoromradet belegen skermelektrod for minimering av miller- kapacitansen och stromfortrengningen |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS56131961A (enrdf_load_stackoverflow) |
| DE (1) | DE3105693A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2476914B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2070331B (enrdf_load_stackoverflow) |
| IT (1) | IT1135091B (enrdf_load_stackoverflow) |
| PL (1) | PL136606B1 (enrdf_load_stackoverflow) |
| SE (1) | SE456291B (enrdf_load_stackoverflow) |
| YU (1) | YU41520B (enrdf_load_stackoverflow) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57141964A (en) * | 1981-02-26 | 1982-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type field effect transistor |
| DE3210353A1 (de) * | 1982-03-20 | 1983-09-22 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierte darlingtonschaltung |
| EP0205639A1 (en) * | 1985-06-25 | 1986-12-30 | Eaton Corporation | Bidirectional power fet with substrate referenced shield |
| EP0207178A1 (en) * | 1985-06-25 | 1987-01-07 | Eaton Corporation | Bidirectional power fet with field shaping |
| US4577208A (en) * | 1982-09-23 | 1986-03-18 | Eaton Corporation | Bidirectional power FET with integral avalanche protection |
| EP0119400B1 (en) * | 1983-02-17 | 1987-08-05 | Nissan Motor Co., Ltd. | A vertical-type mosfet and method of fabricating the same |
| EP0205640A1 (en) * | 1985-06-25 | 1986-12-30 | Eaton Corporation | Lateral bidirectional shielded notch fet |
| SG165138A1 (en) * | 2000-07-12 | 2010-10-28 | Inst Of Microelectronics | A semiconductor device |
| WO2004066395A2 (en) * | 2003-01-21 | 2004-08-05 | North-West University | Fast switching power insulated gate semiconductor device |
| US7276747B2 (en) * | 2005-04-25 | 2007-10-02 | Semiconductor Components Industries, L.L.C. | Semiconductor device having screening electrode and method |
| CN102569385B (zh) * | 2010-12-17 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | 具有屏蔽栅的vdmos结构及其制备方法 |
| CN102569386B (zh) * | 2010-12-17 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | 具有屏蔽栅的vdmos器件及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1132810A (en) * | 1966-03-30 | 1968-11-06 | Matsushita Electronics Corp | Field-effect transistor having insulated gates |
| GB1316555A (enrdf_load_stackoverflow) * | 1969-08-12 | 1973-05-09 | ||
| US3845495A (en) * | 1971-09-23 | 1974-10-29 | Signetics Corp | High voltage, high frequency double diffused metal oxide semiconductor device |
| GB1423449A (en) * | 1973-07-27 | 1976-02-04 | Standard Telephones Cables Ltd | Semiconductor device |
| JPS52106688A (en) * | 1976-03-05 | 1977-09-07 | Nec Corp | Field-effect transistor |
-
1981
- 1981-01-13 SE SE8100148A patent/SE456291B/sv not_active IP Right Cessation
- 1981-01-20 IT IT19216/81A patent/IT1135091B/it active
- 1981-02-12 GB GB8104365A patent/GB2070331B/en not_active Expired
- 1981-02-17 DE DE19813105693 patent/DE3105693A1/de active Granted
- 1981-02-18 JP JP2362181A patent/JPS56131961A/ja active Granted
- 1981-02-19 YU YU424/81A patent/YU41520B/xx unknown
- 1981-02-20 PL PL1981229786A patent/PL136606B1/pl unknown
- 1981-02-20 FR FR8103443A patent/FR2476914B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56131961A (en) | 1981-10-15 |
| YU41520B (en) | 1987-08-31 |
| IT8119216A0 (it) | 1981-01-20 |
| GB2070331A (en) | 1981-09-03 |
| DE3105693A1 (de) | 1981-11-26 |
| SE8100148L (sv) | 1981-08-23 |
| DE3105693C2 (enrdf_load_stackoverflow) | 1992-12-10 |
| YU42481A (en) | 1983-06-30 |
| GB2070331B (en) | 1984-05-23 |
| PL136606B1 (en) | 1986-03-31 |
| JPH0213830B2 (enrdf_load_stackoverflow) | 1990-04-05 |
| FR2476914B1 (fr) | 1985-10-18 |
| FR2476914A1 (fr) | 1981-08-28 |
| IT1135091B (it) | 1986-08-20 |
| PL229786A1 (enrdf_load_stackoverflow) | 1981-09-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10192978B2 (en) | Semiconductor apparatus | |
| US9437728B2 (en) | Semiconductor device | |
| US4455565A (en) | Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode | |
| US7592668B2 (en) | Charge balance techniques for power devices | |
| SE461490B (sv) | Mos-transistor utbildad paa ett isolerande underlag | |
| JP2004297086A (ja) | 高スイッチングスピードのための横方向パワーｍｏｓｆｅｔ | |
| KR100276414B1 (ko) | 절연 게이트형 반도체 장치 | |
| SE456291B (sv) | Vertikal mosfet-anordning innefattande en over kollektoromradet belegen skermelektrod for minimering av miller- kapacitansen och stromfortrengningen | |
| SE462309B (sv) | Halvledaranordning för höga spänningsgar och en halvledaranordning med ett fältplattesteg som minskar krökningen av ekvipotentiallinjen av elektriskt fält I halvledarkroppen | |
| JPH04146674A (ja) | 半導体装置及びその製造方法 | |
| SE457303B (sv) | Halvledaranordning samt foerfarande foer framstaellning av densamma | |
| US10957773B1 (en) | Semiconductor device | |
| CN116072697A (zh) | 一种半导体器件及集成电路 | |
| US20170179266A1 (en) | Semiconductor device and manufacturing method for semiconductor device | |
| JPS63266882A (ja) | 縦型絶縁ゲ−ト電界効果トランジスタ | |
| JPH09275212A (ja) | 電圧駆動型半導体装置 | |
| US20180350974A1 (en) | Semiconductor device | |
| US11043554B2 (en) | Semiconductor device | |
| JP3749191B2 (ja) | 高耐圧半導体装置 | |
| KR20140034054A (ko) | 반도체 장치 및 그것을 이용한 반도체 집적 회로 장치 | |
| US10256331B2 (en) | Insulated gate turn-off device having low capacitance and low saturation current | |
| JP6678615B2 (ja) | 半導体装置 | |
| US11600692B2 (en) | Semiconductor device | |
| JP2011108800A (ja) | 横型ｉｇｂｔ及び横型ｉｇｂｔの製造方法 | |
| JP5312889B2 (ja) | 半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAL | Patent in force |
Ref document number: 8100148-9 Format of ref document f/p: F |
|
| NUG | Patent has lapsed |
Ref document number: 8100148-9 Format of ref document f/p: F |