IT1135091B - Transistore mosfet verticale,dotato di un elettrodo di schermatura - Google Patents
Transistore mosfet verticale,dotato di un elettrodo di schermaturaInfo
- Publication number
- IT1135091B IT1135091B IT19216/81A IT1921681A IT1135091B IT 1135091 B IT1135091 B IT 1135091B IT 19216/81 A IT19216/81 A IT 19216/81A IT 1921681 A IT1921681 A IT 1921681A IT 1135091 B IT1135091 B IT 1135091B
- Authority
- IT
- Italy
- Prior art keywords
- shielding electrode
- mosfet transistor
- vertical mosfet
- vertical
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12371580A | 1980-02-22 | 1980-02-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8119216A0 IT8119216A0 (it) | 1981-01-20 |
IT1135091B true IT1135091B (it) | 1986-08-20 |
Family
ID=22410424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT19216/81A IT1135091B (it) | 1980-02-22 | 1981-01-20 | Transistore mosfet verticale,dotato di un elettrodo di schermatura |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS56131961A (enrdf_load_stackoverflow) |
DE (1) | DE3105693A1 (enrdf_load_stackoverflow) |
FR (1) | FR2476914B1 (enrdf_load_stackoverflow) |
GB (1) | GB2070331B (enrdf_load_stackoverflow) |
IT (1) | IT1135091B (enrdf_load_stackoverflow) |
PL (1) | PL136606B1 (enrdf_load_stackoverflow) |
SE (1) | SE456291B (enrdf_load_stackoverflow) |
YU (1) | YU41520B (enrdf_load_stackoverflow) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57141964A (en) * | 1981-02-26 | 1982-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type field effect transistor |
DE3210353A1 (de) * | 1982-03-20 | 1983-09-22 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierte darlingtonschaltung |
EP0205639A1 (en) * | 1985-06-25 | 1986-12-30 | Eaton Corporation | Bidirectional power fet with substrate referenced shield |
EP0207178A1 (en) * | 1985-06-25 | 1987-01-07 | Eaton Corporation | Bidirectional power fet with field shaping |
US4577208A (en) * | 1982-09-23 | 1986-03-18 | Eaton Corporation | Bidirectional power FET with integral avalanche protection |
EP0119400B1 (en) * | 1983-02-17 | 1987-08-05 | Nissan Motor Co., Ltd. | A vertical-type mosfet and method of fabricating the same |
EP0205640A1 (en) * | 1985-06-25 | 1986-12-30 | Eaton Corporation | Lateral bidirectional shielded notch fet |
SG165138A1 (en) * | 2000-07-12 | 2010-10-28 | Inst Of Microelectronics | A semiconductor device |
US20060118832A1 (en) * | 2003-01-21 | 2006-06-08 | North-West University | Fast switching power insulated gate semiconductor device |
US7276747B2 (en) * | 2005-04-25 | 2007-10-02 | Semiconductor Components Industries, L.L.C. | Semiconductor device having screening electrode and method |
CN102569386B (zh) * | 2010-12-17 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | 具有屏蔽栅的vdmos器件及其制备方法 |
CN102569385B (zh) * | 2010-12-17 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | 具有屏蔽栅的vdmos结构及其制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1132810A (en) * | 1966-03-30 | 1968-11-06 | Matsushita Electronics Corp | Field-effect transistor having insulated gates |
GB1316555A (enrdf_load_stackoverflow) * | 1969-08-12 | 1973-05-09 | ||
US3845495A (en) * | 1971-09-23 | 1974-10-29 | Signetics Corp | High voltage, high frequency double diffused metal oxide semiconductor device |
GB1423449A (en) * | 1973-07-27 | 1976-02-04 | Standard Telephones Cables Ltd | Semiconductor device |
JPS52106688A (en) * | 1976-03-05 | 1977-09-07 | Nec Corp | Field-effect transistor |
-
1981
- 1981-01-13 SE SE8100148A patent/SE456291B/sv not_active IP Right Cessation
- 1981-01-20 IT IT19216/81A patent/IT1135091B/it active
- 1981-02-12 GB GB8104365A patent/GB2070331B/en not_active Expired
- 1981-02-17 DE DE19813105693 patent/DE3105693A1/de active Granted
- 1981-02-18 JP JP2362181A patent/JPS56131961A/ja active Granted
- 1981-02-19 YU YU424/81A patent/YU41520B/xx unknown
- 1981-02-20 PL PL1981229786A patent/PL136606B1/pl unknown
- 1981-02-20 FR FR8103443A patent/FR2476914B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
YU41520B (en) | 1987-08-31 |
SE8100148L (sv) | 1981-08-23 |
DE3105693A1 (de) | 1981-11-26 |
DE3105693C2 (enrdf_load_stackoverflow) | 1992-12-10 |
IT8119216A0 (it) | 1981-01-20 |
JPH0213830B2 (enrdf_load_stackoverflow) | 1990-04-05 |
FR2476914A1 (fr) | 1981-08-28 |
PL229786A1 (enrdf_load_stackoverflow) | 1981-09-18 |
FR2476914B1 (fr) | 1985-10-18 |
YU42481A (en) | 1983-06-30 |
JPS56131961A (en) | 1981-10-15 |
GB2070331A (en) | 1981-09-03 |
PL136606B1 (en) | 1986-03-31 |
GB2070331B (en) | 1984-05-23 |
SE456291B (sv) | 1988-09-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19960129 |