YU41520B - Vertical mosfet with a screening electrode - Google Patents

Vertical mosfet with a screening electrode

Info

Publication number
YU41520B
YU41520B YU424/81A YU42481A YU41520B YU 41520 B YU41520 B YU 41520B YU 424/81 A YU424/81 A YU 424/81A YU 42481 A YU42481 A YU 42481A YU 41520 B YU41520 B YU 41520B
Authority
YU
Yugoslavia
Prior art keywords
vertical mosfet
screening electrode
screening
electrode
mosfet
Prior art date
Application number
YU424/81A
Other versions
YU42481A (en
Inventor
A M Goodman
R V Martinelli
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of YU42481A publication Critical patent/YU42481A/en
Publication of YU41520B publication Critical patent/YU41520B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
YU424/81A 1980-02-22 1981-02-19 Vertical mosfet with a screening electrode YU41520B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12371580A 1980-02-22 1980-02-22

Publications (2)

Publication Number Publication Date
YU42481A YU42481A (en) 1983-06-30
YU41520B true YU41520B (en) 1987-08-31

Family

ID=22410424

Family Applications (1)

Application Number Title Priority Date Filing Date
YU424/81A YU41520B (en) 1980-02-22 1981-02-19 Vertical mosfet with a screening electrode

Country Status (8)

Country Link
JP (1) JPS56131961A (en)
DE (1) DE3105693A1 (en)
FR (1) FR2476914B1 (en)
GB (1) GB2070331B (en)
IT (1) IT1135091B (en)
PL (1) PL136606B1 (en)
SE (1) SE456291B (en)
YU (1) YU41520B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141964A (en) * 1981-02-26 1982-09-02 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
DE3210353A1 (en) * 1982-03-20 1983-09-22 Robert Bosch Gmbh, 7000 Stuttgart MONOLITHICALLY INTEGRATED DARLINGTON CIRCUIT
EP0205639A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Bidirectional power fet with substrate referenced shield
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
EP0207178A1 (en) * 1985-06-25 1987-01-07 Eaton Corporation Bidirectional power fet with field shaping
DE3465225D1 (en) * 1983-02-17 1987-09-10 Nissan Motor A vertical-type mosfet and method of fabricating the same
EP0205640A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Lateral bidirectional shielded notch fet
SG165138A1 (en) * 2000-07-12 2010-10-28 Inst Of Microelectronics A semiconductor device
CN100508211C (en) * 2003-01-21 2009-07-01 西北大学 Fast switching power insulated gate semiconductor device
US7276747B2 (en) * 2005-04-25 2007-10-02 Semiconductor Components Industries, L.L.C. Semiconductor device having screening electrode and method
CN102569385B (en) * 2010-12-17 2015-04-08 上海华虹宏力半导体制造有限公司 VDMOS (vertical double-diffused metal oxide semiconductor) structure provided with shielding grid and preparation method thereof
CN102569386B (en) * 2010-12-17 2015-02-04 上海华虹宏力半导体制造有限公司 VDMOS (vertical double-diffused metal oxide semiconductor) device with shield grid and preparation method of VDMOS device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1132810A (en) * 1966-03-30 1968-11-06 Matsushita Electronics Corp Field-effect transistor having insulated gates
GB1316555A (en) * 1969-08-12 1973-05-09
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
GB1423449A (en) * 1973-07-27 1976-02-04 Standard Telephones Cables Ltd Semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor

Also Published As

Publication number Publication date
YU42481A (en) 1983-06-30
IT8119216A0 (en) 1981-01-20
IT1135091B (en) 1986-08-20
GB2070331A (en) 1981-09-03
JPS56131961A (en) 1981-10-15
SE8100148L (en) 1981-08-23
SE456291B (en) 1988-09-19
PL136606B1 (en) 1986-03-31
DE3105693C2 (en) 1992-12-10
GB2070331B (en) 1984-05-23
JPH0213830B2 (en) 1990-04-05
FR2476914B1 (en) 1985-10-18
PL229786A1 (en) 1981-09-18
DE3105693A1 (en) 1981-11-26
FR2476914A1 (en) 1981-08-28

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