YU41520B - Vertical mosfet with a screening electrode - Google Patents
Vertical mosfet with a screening electrodeInfo
- Publication number
- YU41520B YU41520B YU424/81A YU42481A YU41520B YU 41520 B YU41520 B YU 41520B YU 424/81 A YU424/81 A YU 424/81A YU 42481 A YU42481 A YU 42481A YU 41520 B YU41520 B YU 41520B
- Authority
- YU
- Yugoslavia
- Prior art keywords
- vertical mosfet
- screening electrode
- screening
- electrode
- mosfet
- Prior art date
Links
- 238000012216 screening Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12371580A | 1980-02-22 | 1980-02-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
YU42481A YU42481A (en) | 1983-06-30 |
YU41520B true YU41520B (en) | 1987-08-31 |
Family
ID=22410424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
YU424/81A YU41520B (en) | 1980-02-22 | 1981-02-19 | Vertical mosfet with a screening electrode |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS56131961A (en) |
DE (1) | DE3105693A1 (en) |
FR (1) | FR2476914B1 (en) |
GB (1) | GB2070331B (en) |
IT (1) | IT1135091B (en) |
PL (1) | PL136606B1 (en) |
SE (1) | SE456291B (en) |
YU (1) | YU41520B (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57141964A (en) * | 1981-02-26 | 1982-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type field effect transistor |
DE3210353A1 (en) * | 1982-03-20 | 1983-09-22 | Robert Bosch Gmbh, 7000 Stuttgart | MONOLITHICALLY INTEGRATED DARLINGTON CIRCUIT |
EP0205639A1 (en) * | 1985-06-25 | 1986-12-30 | Eaton Corporation | Bidirectional power fet with substrate referenced shield |
US4577208A (en) * | 1982-09-23 | 1986-03-18 | Eaton Corporation | Bidirectional power FET with integral avalanche protection |
EP0207178A1 (en) * | 1985-06-25 | 1987-01-07 | Eaton Corporation | Bidirectional power fet with field shaping |
DE3465225D1 (en) * | 1983-02-17 | 1987-09-10 | Nissan Motor | A vertical-type mosfet and method of fabricating the same |
EP0205640A1 (en) * | 1985-06-25 | 1986-12-30 | Eaton Corporation | Lateral bidirectional shielded notch fet |
SG165138A1 (en) * | 2000-07-12 | 2010-10-28 | Inst Of Microelectronics | A semiconductor device |
CN100508211C (en) * | 2003-01-21 | 2009-07-01 | 西北大学 | Fast switching power insulated gate semiconductor device |
US7276747B2 (en) * | 2005-04-25 | 2007-10-02 | Semiconductor Components Industries, L.L.C. | Semiconductor device having screening electrode and method |
CN102569385B (en) * | 2010-12-17 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | VDMOS (vertical double-diffused metal oxide semiconductor) structure provided with shielding grid and preparation method thereof |
CN102569386B (en) * | 2010-12-17 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | VDMOS (vertical double-diffused metal oxide semiconductor) device with shield grid and preparation method of VDMOS device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1132810A (en) * | 1966-03-30 | 1968-11-06 | Matsushita Electronics Corp | Field-effect transistor having insulated gates |
GB1316555A (en) * | 1969-08-12 | 1973-05-09 | ||
US3845495A (en) * | 1971-09-23 | 1974-10-29 | Signetics Corp | High voltage, high frequency double diffused metal oxide semiconductor device |
GB1423449A (en) * | 1973-07-27 | 1976-02-04 | Standard Telephones Cables Ltd | Semiconductor device |
JPS52106688A (en) * | 1976-03-05 | 1977-09-07 | Nec Corp | Field-effect transistor |
-
1981
- 1981-01-13 SE SE8100148A patent/SE456291B/en not_active IP Right Cessation
- 1981-01-20 IT IT19216/81A patent/IT1135091B/en active
- 1981-02-12 GB GB8104365A patent/GB2070331B/en not_active Expired
- 1981-02-17 DE DE19813105693 patent/DE3105693A1/en active Granted
- 1981-02-18 JP JP2362181A patent/JPS56131961A/en active Granted
- 1981-02-19 YU YU424/81A patent/YU41520B/en unknown
- 1981-02-20 FR FR8103443A patent/FR2476914B1/en not_active Expired
- 1981-02-20 PL PL1981229786A patent/PL136606B1/en unknown
Also Published As
Publication number | Publication date |
---|---|
YU42481A (en) | 1983-06-30 |
IT8119216A0 (en) | 1981-01-20 |
IT1135091B (en) | 1986-08-20 |
GB2070331A (en) | 1981-09-03 |
JPS56131961A (en) | 1981-10-15 |
SE8100148L (en) | 1981-08-23 |
SE456291B (en) | 1988-09-19 |
PL136606B1 (en) | 1986-03-31 |
DE3105693C2 (en) | 1992-12-10 |
GB2070331B (en) | 1984-05-23 |
JPH0213830B2 (en) | 1990-04-05 |
FR2476914B1 (en) | 1985-10-18 |
PL229786A1 (en) | 1981-09-18 |
DE3105693A1 (en) | 1981-11-26 |
FR2476914A1 (en) | 1981-08-28 |
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