IT8119216A0 - VERTICAL MOSFET TRANSISTOR, EQUIPPED WITH A SHIELDING ELECTRODE. - Google Patents
VERTICAL MOSFET TRANSISTOR, EQUIPPED WITH A SHIELDING ELECTRODE.Info
- Publication number
- IT8119216A0 IT8119216A0 IT8119216A IT1921681A IT8119216A0 IT 8119216 A0 IT8119216 A0 IT 8119216A0 IT 8119216 A IT8119216 A IT 8119216A IT 1921681 A IT1921681 A IT 1921681A IT 8119216 A0 IT8119216 A0 IT 8119216A0
- Authority
- IT
- Italy
- Prior art keywords
- shielding electrode
- mosfet transistor
- vertical mosfet
- vertical
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12371580A | 1980-02-22 | 1980-02-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8119216A0 true IT8119216A0 (en) | 1981-01-20 |
IT1135091B IT1135091B (en) | 1986-08-20 |
Family
ID=22410424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT19216/81A IT1135091B (en) | 1980-02-22 | 1981-01-20 | VERTICAL MOSFET TRANSISTOR, EQUIPPED WITH A SHIELDING ELECTRODE |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS56131961A (en) |
DE (1) | DE3105693A1 (en) |
FR (1) | FR2476914B1 (en) |
GB (1) | GB2070331B (en) |
IT (1) | IT1135091B (en) |
PL (1) | PL136606B1 (en) |
SE (1) | SE456291B (en) |
YU (1) | YU41520B (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57141964A (en) * | 1981-02-26 | 1982-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type field effect transistor |
DE3210353A1 (en) * | 1982-03-20 | 1983-09-22 | Robert Bosch Gmbh, 7000 Stuttgart | MONOLITHICALLY INTEGRATED DARLINGTON CIRCUIT |
EP0205639A1 (en) * | 1985-06-25 | 1986-12-30 | Eaton Corporation | Bidirectional power fet with substrate referenced shield |
US4577208A (en) * | 1982-09-23 | 1986-03-18 | Eaton Corporation | Bidirectional power FET with integral avalanche protection |
EP0207178A1 (en) * | 1985-06-25 | 1987-01-07 | Eaton Corporation | Bidirectional power fet with field shaping |
DE3465225D1 (en) * | 1983-02-17 | 1987-09-10 | Nissan Motor | A vertical-type mosfet and method of fabricating the same |
EP0205640A1 (en) * | 1985-06-25 | 1986-12-30 | Eaton Corporation | Lateral bidirectional shielded notch fet |
SG165138A1 (en) * | 2000-07-12 | 2010-10-28 | Inst Of Microelectronics | A semiconductor device |
JP5362955B2 (en) * | 2003-01-21 | 2013-12-11 | ノース−ウエスト ユニヴァーシティ | High-speed switching insulated gate power semiconductor device |
US7276747B2 (en) * | 2005-04-25 | 2007-10-02 | Semiconductor Components Industries, L.L.C. | Semiconductor device having screening electrode and method |
CN102569386B (en) * | 2010-12-17 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | VDMOS (vertical double-diffused metal oxide semiconductor) device with shield grid and preparation method of VDMOS device |
CN102569385B (en) * | 2010-12-17 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | VDMOS (vertical double-diffused metal oxide semiconductor) structure provided with shielding grid and preparation method thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1132810A (en) * | 1966-03-30 | 1968-11-06 | Matsushita Electronics Corp | Field-effect transistor having insulated gates |
GB1316555A (en) * | 1969-08-12 | 1973-05-09 | ||
US3845495A (en) * | 1971-09-23 | 1974-10-29 | Signetics Corp | High voltage, high frequency double diffused metal oxide semiconductor device |
GB1423449A (en) * | 1973-07-27 | 1976-02-04 | Standard Telephones Cables Ltd | Semiconductor device |
JPS52106688A (en) * | 1976-03-05 | 1977-09-07 | Nec Corp | Field-effect transistor |
-
1981
- 1981-01-13 SE SE8100148A patent/SE456291B/en not_active IP Right Cessation
- 1981-01-20 IT IT19216/81A patent/IT1135091B/en active
- 1981-02-12 GB GB8104365A patent/GB2070331B/en not_active Expired
- 1981-02-17 DE DE19813105693 patent/DE3105693A1/en active Granted
- 1981-02-18 JP JP2362181A patent/JPS56131961A/en active Granted
- 1981-02-19 YU YU424/81A patent/YU41520B/en unknown
- 1981-02-20 FR FR8103443A patent/FR2476914B1/en not_active Expired
- 1981-02-20 PL PL1981229786A patent/PL136606B1/en unknown
Also Published As
Publication number | Publication date |
---|---|
JPH0213830B2 (en) | 1990-04-05 |
FR2476914A1 (en) | 1981-08-28 |
SE456291B (en) | 1988-09-19 |
YU41520B (en) | 1987-08-31 |
PL229786A1 (en) | 1981-09-18 |
SE8100148L (en) | 1981-08-23 |
GB2070331B (en) | 1984-05-23 |
FR2476914B1 (en) | 1985-10-18 |
PL136606B1 (en) | 1986-03-31 |
YU42481A (en) | 1983-06-30 |
DE3105693C2 (en) | 1992-12-10 |
DE3105693A1 (en) | 1981-11-26 |
GB2070331A (en) | 1981-09-03 |
IT1135091B (en) | 1986-08-20 |
JPS56131961A (en) | 1981-10-15 |
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Legal Events
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TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19960129 |