JPS56131961A - Mos fet device - Google Patents

Mos fet device

Info

Publication number
JPS56131961A
JPS56131961A JP2362181A JP2362181A JPS56131961A JP S56131961 A JPS56131961 A JP S56131961A JP 2362181 A JP2362181 A JP 2362181A JP 2362181 A JP2362181 A JP 2362181A JP S56131961 A JPS56131961 A JP S56131961A
Authority
JP
Japan
Prior art keywords
fet device
mos fet
mos
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2362181A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0213830B2 (enrdf_load_stackoverflow
Inventor
Marukorumu Gutsudoman Arubin
Ubarudo Maachineri Raamon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS56131961A publication Critical patent/JPS56131961A/ja
Publication of JPH0213830B2 publication Critical patent/JPH0213830B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2362181A 1980-02-22 1981-02-18 Mos fet device Granted JPS56131961A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12371580A 1980-02-22 1980-02-22

Publications (2)

Publication Number Publication Date
JPS56131961A true JPS56131961A (en) 1981-10-15
JPH0213830B2 JPH0213830B2 (enrdf_load_stackoverflow) 1990-04-05

Family

ID=22410424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2362181A Granted JPS56131961A (en) 1980-02-22 1981-02-18 Mos fet device

Country Status (8)

Country Link
JP (1) JPS56131961A (enrdf_load_stackoverflow)
DE (1) DE3105693A1 (enrdf_load_stackoverflow)
FR (1) FR2476914B1 (enrdf_load_stackoverflow)
GB (1) GB2070331B (enrdf_load_stackoverflow)
IT (1) IT1135091B (enrdf_load_stackoverflow)
PL (1) PL136606B1 (enrdf_load_stackoverflow)
SE (1) SE456291B (enrdf_load_stackoverflow)
YU (1) YU41520B (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141964A (en) * 1981-02-26 1982-09-02 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
CN102569385A (zh) * 2010-12-17 2012-07-11 上海华虹Nec电子有限公司 具有屏蔽栅的vdmos结构及其制备方法
CN102569386A (zh) * 2010-12-17 2012-07-11 上海华虹Nec电子有限公司 具有屏蔽栅的vdmos器件及其制备方法
JP2013179344A (ja) * 2003-01-21 2013-09-09 Northwest Univ 高速スイッチング絶縁ゲート型パワー半導体デバイス

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3210353A1 (de) * 1982-03-20 1983-09-22 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte darlingtonschaltung
EP0205639A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Bidirectional power fet with substrate referenced shield
EP0207178A1 (en) * 1985-06-25 1987-01-07 Eaton Corporation Bidirectional power fet with field shaping
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
EP0119400B1 (en) * 1983-02-17 1987-08-05 Nissan Motor Co., Ltd. A vertical-type mosfet and method of fabricating the same
EP0205640A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Lateral bidirectional shielded notch fet
SG165138A1 (en) * 2000-07-12 2010-10-28 Inst Of Microelectronics A semiconductor device
US7276747B2 (en) * 2005-04-25 2007-10-02 Semiconductor Components Industries, L.L.C. Semiconductor device having screening electrode and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1132810A (en) * 1966-03-30 1968-11-06 Matsushita Electronics Corp Field-effect transistor having insulated gates
GB1316555A (enrdf_load_stackoverflow) * 1969-08-12 1973-05-09
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
GB1423449A (en) * 1973-07-27 1976-02-04 Standard Telephones Cables Ltd Semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141964A (en) * 1981-02-26 1982-09-02 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
JP2013179344A (ja) * 2003-01-21 2013-09-09 Northwest Univ 高速スイッチング絶縁ゲート型パワー半導体デバイス
CN102569385A (zh) * 2010-12-17 2012-07-11 上海华虹Nec电子有限公司 具有屏蔽栅的vdmos结构及其制备方法
CN102569386A (zh) * 2010-12-17 2012-07-11 上海华虹Nec电子有限公司 具有屏蔽栅的vdmos器件及其制备方法

Also Published As

Publication number Publication date
YU41520B (en) 1987-08-31
IT8119216A0 (it) 1981-01-20
SE456291B (sv) 1988-09-19
GB2070331A (en) 1981-09-03
DE3105693A1 (de) 1981-11-26
SE8100148L (sv) 1981-08-23
DE3105693C2 (enrdf_load_stackoverflow) 1992-12-10
YU42481A (en) 1983-06-30
GB2070331B (en) 1984-05-23
PL136606B1 (en) 1986-03-31
JPH0213830B2 (enrdf_load_stackoverflow) 1990-04-05
FR2476914B1 (fr) 1985-10-18
FR2476914A1 (fr) 1981-08-28
IT1135091B (it) 1986-08-20
PL229786A1 (enrdf_load_stackoverflow) 1981-09-18

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