SE429313B - Metod for att skiva ett emne av ett hart enkristallmaterial - Google Patents
Metod for att skiva ett emne av ett hart enkristallmaterialInfo
- Publication number
- SE429313B SE429313B SE7805925A SE7805925A SE429313B SE 429313 B SE429313 B SE 429313B SE 7805925 A SE7805925 A SE 7805925A SE 7805925 A SE7805925 A SE 7805925A SE 429313 B SE429313 B SE 429313B
- Authority
- SE
- Sweden
- Prior art keywords
- blank
- disc
- saw blade
- single crystal
- hard
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/028—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/003—Multipurpose machines; Equipment therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mining & Mineral Resources (AREA)
- Inorganic Chemistry (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/803,082 US4084354A (en) | 1977-06-03 | 1977-06-03 | Process for slicing boules of single crystal material |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7805925L SE7805925L (sv) | 1978-12-04 |
SE429313B true SE429313B (sv) | 1983-08-29 |
Family
ID=25185528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7805925A SE429313B (sv) | 1977-06-03 | 1978-05-24 | Metod for att skiva ett emne av ett hart enkristallmaterial |
Country Status (12)
Country | Link |
---|---|
US (1) | US4084354A (es) |
JP (1) | JPS542585A (es) |
AU (1) | AU516065B2 (es) |
BR (1) | BR7803511A (es) |
CA (1) | CA1084172A (es) |
CH (1) | CH633744A5 (es) |
DE (1) | DE2819420C2 (es) |
FR (1) | FR2392793A1 (es) |
GB (1) | GB1555299A (es) |
IT (1) | IT1111182B (es) |
NL (1) | NL7804265A (es) |
SE (1) | SE429313B (es) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4344260A (en) * | 1979-07-13 | 1982-08-17 | Nagano Electronics Industrial Co., Ltd. | Method for precision shaping of wafer materials |
JPS56105638A (en) * | 1980-01-26 | 1981-08-22 | Sumitomo Electric Ind Ltd | Manufacture of circular gallium arsenide wafer |
DE3036829A1 (de) * | 1980-09-30 | 1982-05-13 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum aufnehmen von kristallscheiben |
JPS6213305A (ja) * | 1985-07-12 | 1987-01-22 | 株式会社日立製作所 | ワ−ク回転式切断法およびその装置 |
JPS6296400A (ja) * | 1985-10-23 | 1987-05-02 | Mitsubishi Metal Corp | ウエハの製造方法 |
DE3716943A1 (de) * | 1987-05-20 | 1988-12-08 | Hans J Scheel | Verfahren und vorrichtung zum trennen von insbesondere stabfoermigem material |
DE3884903T2 (de) * | 1987-10-29 | 1994-02-10 | Tokyo Seimitsu Co Ltd | Vorrichtung und Verfahren zum Abschneiden einer Halbleiterscheibe. |
US5111622A (en) * | 1989-05-18 | 1992-05-12 | Silicon Technology Corporation | Slicing and grinding system for a wafer slicing machine |
US5095664A (en) * | 1990-01-30 | 1992-03-17 | Massachusetts Institute Of Technology | Optical surface polishing method |
JP3060445B2 (ja) * | 1992-07-16 | 2000-07-10 | 株式会社東京精密 | 半導体ウエハのスライシング方法及びその装置 |
JP2903916B2 (ja) * | 1992-11-30 | 1999-06-14 | 信越半導体株式会社 | 半導体インゴット加工方法 |
TW230262B (es) * | 1992-12-24 | 1994-09-11 | American Telephone & Telegraph | |
JP2789983B2 (ja) * | 1993-01-28 | 1998-08-27 | 信越半導体株式会社 | 加工誤差補正装置 |
CH690845A5 (de) * | 1994-05-19 | 2001-02-15 | Tokyo Seimitsu Co Ltd | Verfahren zum Positionieren eines Werkstücks und Vorrichtung hierfür. |
CZ283541B6 (cs) * | 1996-03-06 | 1998-04-15 | Trimex Tesla, S.R.O. | Způsob řezání ingotů z tvrdých materiálů na desky a pila k provádění tohoto způsobu |
JP3213563B2 (ja) * | 1997-03-11 | 2001-10-02 | 株式会社スーパーシリコン研究所 | ノッチレスウェーハの製造方法 |
US7007855B1 (en) * | 2000-03-17 | 2006-03-07 | International Business Machines Corporation | Wafer identification mark |
DE10019601B4 (de) | 2000-04-20 | 2006-09-14 | Wacker Chemie Ag | Verfahren zur Herstellung eines polykristallinen Siliciumstabes |
JP3649393B2 (ja) * | 2000-09-28 | 2005-05-18 | シャープ株式会社 | シリコンウエハの加工方法、シリコンウエハおよびシリコンブロック |
US7637801B2 (en) * | 2000-09-28 | 2009-12-29 | Sharp Kabushiki Kaisha | Method of making solar cell |
DE10103592B4 (de) * | 2001-01-26 | 2006-07-13 | Ernst Spielvogel | Säge zum Zerteilen von Materialien in dünne Scheiben, insbesondere zum Zerteilen von Wafern aus Silizium |
JP4489777B2 (ja) * | 2003-06-10 | 2010-06-23 | ケーエルエー−テンコール コーポレイション | マルチチャネルデータのグラフィック表現を用いて基板の表面において生じる欠陥を分類するための方法及びシステム |
WO2010138764A2 (en) * | 2009-05-29 | 2010-12-02 | Applied Materials, Inc. | Substrate side marking and identification |
CN108523329A (zh) * | 2018-02-07 | 2018-09-14 | 上海黛恩妠珠宝有限公司 | 一种碳硅石圆钻 |
CN111775354B (zh) * | 2020-06-19 | 2021-10-01 | 山东省科学院新材料研究所 | 一种钽铌酸钾单晶基片元件的加工制作方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL213347A (es) * | 1955-12-30 | |||
DE1145989B (de) * | 1959-10-29 | 1963-03-21 | Intermetall | Vorrichtung zum Saegen von kleinen stabfoermigen Objekten, insbesondere Halbleiter-Einkristallen |
US3039235A (en) * | 1961-01-31 | 1962-06-19 | Hamco Mach & Elect Co | Cutting apparatus |
DE1427716A1 (de) * | 1964-01-20 | 1969-01-16 | Halbleiterwerk Frankfurt Oder | Verfahren und Vorrichtung zum Abtrennen duenner Kristallscheiben aus Halbleitermaterial von Einkristallstaeben |
DE1752443A1 (de) * | 1968-05-27 | 1971-05-27 | Helmut Willems | Innenlochsaege |
US3626644A (en) * | 1969-07-17 | 1971-12-14 | John A Cupler | Method of making solid diamond drills |
US3662733A (en) * | 1969-10-12 | 1972-05-16 | Yoji Hattori | Annular cutting apparatus with work removal means |
JPS5243189A (en) * | 1975-10-03 | 1977-04-04 | Hitachi Ltd | Method for cutting crystal |
-
1977
- 1977-06-03 US US05/803,082 patent/US4084354A/en not_active Expired - Lifetime
-
1978
- 1978-03-31 CA CA300,171A patent/CA1084172A/en not_active Expired
- 1978-04-06 AU AU34831/78A patent/AU516065B2/en not_active Expired
- 1978-04-18 CH CH411078A patent/CH633744A5/de not_active IP Right Cessation
- 1978-04-21 NL NL7804265A patent/NL7804265A/xx not_active Application Discontinuation
- 1978-04-26 GB GB16574/78A patent/GB1555299A/en not_active Expired
- 1978-04-27 FR FR7813285A patent/FR2392793A1/fr active Granted
- 1978-05-03 DE DE2819420A patent/DE2819420C2/de not_active Expired
- 1978-05-24 SE SE7805925A patent/SE429313B/sv not_active IP Right Cessation
- 1978-05-26 IT IT23831/78A patent/IT1111182B/it active
- 1978-06-01 JP JP6500078A patent/JPS542585A/ja active Granted
- 1978-06-01 BR BR7803511A patent/BR7803511A/pt unknown
Also Published As
Publication number | Publication date |
---|---|
IT1111182B (it) | 1986-01-13 |
US4084354A (en) | 1978-04-18 |
JPS542585A (en) | 1979-01-10 |
FR2392793B1 (es) | 1982-05-14 |
BR7803511A (pt) | 1979-04-24 |
DE2819420A1 (de) | 1978-12-14 |
IT7823831A0 (it) | 1978-05-26 |
SE7805925L (sv) | 1978-12-04 |
DE2819420C2 (de) | 1987-05-14 |
CA1084172A (en) | 1980-08-19 |
CH633744A5 (de) | 1982-12-31 |
NL7804265A (nl) | 1978-12-05 |
AU3483178A (en) | 1979-10-11 |
AU516065B2 (en) | 1981-05-14 |
GB1555299A (en) | 1979-11-07 |
JPS6159889B2 (es) | 1986-12-18 |
FR2392793A1 (fr) | 1978-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE429313B (sv) | Metod for att skiva ett emne av ett hart enkristallmaterial | |
US5718615A (en) | Semiconductor wafer dicing method | |
TWI327100B (en) | Verfahren zur herstellung einer halbleiterscheibe mit einer profilierten kante | |
TWI263556B (en) | Backside polishing method of semiconductor wafer | |
US4967461A (en) | Method for manufacturing and handling thin wafers | |
JP2012222310A (ja) | ウェーハの加工方法 | |
JP2004148487A (ja) | 研磨方法及び該研磨方法に用いる研磨装置 | |
JP2017216274A (ja) | ウェーハの加工方法 | |
JPS63306864A (ja) | ロッド伏またはブロック伏工作物から円板を分離するための切断工具を研削する方法および分離法 | |
US6969302B1 (en) | Semiconductor wafer grinding method | |
US10335875B2 (en) | Methods and devices for dicing components from a sheet of copper alloy | |
CN109285771A (zh) | 晶片的加工方法 | |
CN211805276U (zh) | 磨削装置 | |
JP6284440B2 (ja) | 切削装置及びエッジトリミング方法 | |
JP2008023690A (ja) | ウェーハ面取り砥石のツルーイング方法及びウェーハ面取り装置 | |
JP2002075923A (ja) | シリコン単結晶インゴットの加工方法 | |
JP2021122073A (ja) | ウェーハ及びウェーハの薄化方法並びにウェーハの薄化装置 | |
JPH0423432A (ja) | 内周刃スライサーによる単結晶インゴットの切断方法及び装置 | |
JP2012019126A (ja) | ウエーハの加工方法 | |
JPH06188308A (ja) | ダイシングブレード | |
JP2009126006A (ja) | ワークの切削加工方法 | |
JP5860216B2 (ja) | ウエーハの面取り部除去方法 | |
JP2009124036A (ja) | ダイシング方法 | |
JP2010162661A (ja) | 面取り加工方法及び面取り加工装置 | |
JP2005251909A (ja) | ドレッシング方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |
Ref document number: 7805925-0 Effective date: 19900518 Format of ref document f/p: F |