SE380389B - Halvledaranordning med en halvledarkropp uppvisande atminstone en felteffekttransistor med isolerad styrelektrod och sett for dess tillverkning - Google Patents

Halvledaranordning med en halvledarkropp uppvisande atminstone en felteffekttransistor med isolerad styrelektrod och sett for dess tillverkning

Info

Publication number
SE380389B
SE380389B SE7305126A SE7305126A SE380389B SE 380389 B SE380389 B SE 380389B SE 7305126 A SE7305126 A SE 7305126A SE 7305126 A SE7305126 A SE 7305126A SE 380389 B SE380389 B SE 380389B
Authority
SE
Sweden
Prior art keywords
atminstone
semiconduct
kit
manufacturing
semiconductor device
Prior art date
Application number
SE7305126A
Other languages
English (en)
Swedish (sv)
Inventor
B M M Brandt
J Shappir
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE380389B publication Critical patent/SE380389B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0142—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/61—
    • H10W10/0121—
    • H10W10/0126—
    • H10W10/13—
SE7305126A 1972-04-14 1973-04-11 Halvledaranordning med en halvledarkropp uppvisande atminstone en felteffekttransistor med isolerad styrelektrod och sett for dess tillverkning SE380389B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7205000A NL7205000A (show.php) 1972-04-14 1972-04-14

Publications (1)

Publication Number Publication Date
SE380389B true SE380389B (sv) 1975-11-03

Family

ID=19815843

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7305126A SE380389B (sv) 1972-04-14 1973-04-11 Halvledaranordning med en halvledarkropp uppvisande atminstone en felteffekttransistor med isolerad styrelektrod och sett for dess tillverkning

Country Status (9)

Country Link
JP (1) JPS5241104B2 (show.php)
AU (1) AU473855B2 (show.php)
CH (1) CH555089A (show.php)
DE (1) DE2318179C2 (show.php)
FR (1) FR2328283A1 (show.php)
GB (1) GB1420676A (show.php)
IT (1) IT983793B (show.php)
NL (1) NL7205000A (show.php)
SE (1) SE380389B (show.php)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3955269A (en) * 1975-06-19 1976-05-11 International Business Machines Corporation Fabricating high performance integrated bipolar and complementary field effect transistors
JPS524183A (en) * 1975-06-28 1977-01-13 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of semiconductor devices
NL7510903A (nl) * 1975-09-17 1977-03-21 Philips Nv Werkwijze voor het vervaardigen van een halfgelei- derinrichting, en inrichting vervaardigd volgens de werkwijze.
JPS5244578A (en) * 1975-10-06 1977-04-07 Mitsubishi Electric Corp Complementary type insulated gate field effect semiconductor device
JPS5248476A (en) * 1975-10-16 1977-04-18 Oki Electric Ind Co Ltd Process for production of complementary type field effect transistor i ntegrated circuit
DE3133468A1 (de) * 1981-08-25 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen in siliziumgate-technologie
JPS5956758A (ja) * 1983-08-31 1984-04-02 Hitachi Ltd 電界効果半導体装置の製法
JPS59130457A (ja) * 1984-01-04 1984-07-27 Oki Electric Ind Co Ltd 相補形電界効果半導体集積回路装置
JPH0681932U (ja) * 1993-05-06 1994-11-25 株式会社丸辰 篭

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440503A (en) * 1967-05-31 1969-04-22 Westinghouse Electric Corp Integrated complementary mos-type transistor structure and method of making same
NL160988C (nl) * 1971-06-08 1979-12-17 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting.

Also Published As

Publication number Publication date
FR2328283B1 (show.php) 1978-03-24
GB1420676A (en) 1976-01-07
AU473855B2 (en) 1976-07-08
CH555089A (de) 1974-10-15
IT983793B (it) 1974-11-11
JPS4919779A (show.php) 1974-02-21
NL7205000A (show.php) 1973-10-16
DE2318179C2 (de) 1983-09-01
AU5426973A (en) 1974-10-10
FR2328283A1 (fr) 1977-05-13
DE2318179A1 (de) 1973-10-18
JPS5241104B2 (show.php) 1977-10-17

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