IT983793B - Dispositivo semiconduttore e me todo per la fabbricazione dello stesso - Google Patents

Dispositivo semiconduttore e me todo per la fabbricazione dello stesso

Info

Publication number
IT983793B
IT983793B IT22894/73A IT2289473A IT983793B IT 983793 B IT983793 B IT 983793B IT 22894/73 A IT22894/73 A IT 22894/73A IT 2289473 A IT2289473 A IT 2289473A IT 983793 B IT983793 B IT 983793B
Authority
IT
Italy
Prior art keywords
todo
manufacturing
same
semiconducting device
semiconducting
Prior art date
Application number
IT22894/73A
Other languages
English (en)
Italian (it)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT983793B publication Critical patent/IT983793B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0142—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/61—
    • H10W10/0121—
    • H10W10/0126—
    • H10W10/13—
IT22894/73A 1972-04-14 1973-04-11 Dispositivo semiconduttore e me todo per la fabbricazione dello stesso IT983793B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7205000A NL7205000A (show.php) 1972-04-14 1972-04-14

Publications (1)

Publication Number Publication Date
IT983793B true IT983793B (it) 1974-11-11

Family

ID=19815843

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22894/73A IT983793B (it) 1972-04-14 1973-04-11 Dispositivo semiconduttore e me todo per la fabbricazione dello stesso

Country Status (9)

Country Link
JP (1) JPS5241104B2 (show.php)
AU (1) AU473855B2 (show.php)
CH (1) CH555089A (show.php)
DE (1) DE2318179C2 (show.php)
FR (1) FR2328283A1 (show.php)
GB (1) GB1420676A (show.php)
IT (1) IT983793B (show.php)
NL (1) NL7205000A (show.php)
SE (1) SE380389B (show.php)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3955269A (en) * 1975-06-19 1976-05-11 International Business Machines Corporation Fabricating high performance integrated bipolar and complementary field effect transistors
JPS524183A (en) * 1975-06-28 1977-01-13 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of semiconductor devices
NL7510903A (nl) * 1975-09-17 1977-03-21 Philips Nv Werkwijze voor het vervaardigen van een halfgelei- derinrichting, en inrichting vervaardigd volgens de werkwijze.
JPS5244578A (en) * 1975-10-06 1977-04-07 Mitsubishi Electric Corp Complementary type insulated gate field effect semiconductor device
JPS5248476A (en) * 1975-10-16 1977-04-18 Oki Electric Ind Co Ltd Process for production of complementary type field effect transistor i ntegrated circuit
DE3133468A1 (de) * 1981-08-25 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen in siliziumgate-technologie
JPS5956758A (ja) * 1983-08-31 1984-04-02 Hitachi Ltd 電界効果半導体装置の製法
JPS59130457A (ja) * 1984-01-04 1984-07-27 Oki Electric Ind Co Ltd 相補形電界効果半導体集積回路装置
JPH0681932U (ja) * 1993-05-06 1994-11-25 株式会社丸辰 篭

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440503A (en) * 1967-05-31 1969-04-22 Westinghouse Electric Corp Integrated complementary mos-type transistor structure and method of making same
NL160988C (nl) * 1971-06-08 1979-12-17 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting.

Also Published As

Publication number Publication date
FR2328283B1 (show.php) 1978-03-24
GB1420676A (en) 1976-01-07
AU473855B2 (en) 1976-07-08
SE380389B (sv) 1975-11-03
CH555089A (de) 1974-10-15
JPS4919779A (show.php) 1974-02-21
NL7205000A (show.php) 1973-10-16
DE2318179C2 (de) 1983-09-01
AU5426973A (en) 1974-10-10
FR2328283A1 (fr) 1977-05-13
DE2318179A1 (de) 1973-10-18
JPS5241104B2 (show.php) 1977-10-17

Similar Documents

Publication Publication Date Title
IT955675B (it) Dispositivo semiconduttore e metodo per la fabbricazione dello stesso
IT1025054B (it) Dispositivo semiconduttore stabilizzato e metodo di fabbricazione dello stesso
BE798699A (fr) Oreiller
AR201550A1 (es) Muneca y similares
IT980547B (it) Transistore ripolare e procedimento per la sua fabbricazione
IT1001443B (it) Confezione e procedimento per la fabbricazione della stessa
TR17446A (tr) 1-aminourasiler,bunlarin imaline dair usuller ve bunlarin herbisid olarak kullanilmalari
FI55755B (fi) Foerfarande foer framstaellning av en koagulerad mjoelkprodukt med ultrafiltrering
NO149734C (no) Fremgangsmaate for fremstilling av urea
TR17513A (tr) Fenilindol tuerevleri,bunlarin imali usulue,ve kullanilmalari
IT983793B (it) Dispositivo semiconduttore e me todo per la fabbricazione dello stesso
BR7406962D0 (pt) Rotor e dispositivo incluindo o mesmo
TR17380A (tr) Ueruen ve usul
SE7711953L (sv) N-(1-substituerade-3-pyrrolidinyl)-bensamider och tiobensamider
BR7208633D0 (pt) Valvula de escapamento refrigerada e seus metodos de fabricacao
IT1009603B (it) Dispositivo semiconduttore e metodo di fabbricazione dello stesso
IT995885B (it) Componente a semiconduttore e meto do per la fabbricazione dello stesso
IT978097B (it) Dispositivo semiconduttore e me todo per la fabbricazione dello stesso
FI55969B (fi) Daeckskoppling foer fjaerrstyrning av en fartygsdrivanlaeggning
IT978317B (it) Monoazopigmenti e procedimento per la loro preparazione
IT991003B (it) Dispositivo getter e metodo di utilizzazione dello stesso
BE801668A (fr) Amino-imidazo-isoquinoleines et amino-pyrazolo-isoquinoleines
BR7302648D0 (pt) Aparelho gravador e reprodutor
SE7607356L (sv) N-(dietylaminoetyl)-2-metoxi-4-amino-5-klorbensamid
IT987125B (it) Azocoloranti basici procedimento per la loro preparazione e loro impiego