JPS5248476A - Process for production of complementary type field effect transistor i ntegrated circuit - Google Patents

Process for production of complementary type field effect transistor i ntegrated circuit

Info

Publication number
JPS5248476A
JPS5248476A JP12379675A JP12379675A JPS5248476A JP S5248476 A JPS5248476 A JP S5248476A JP 12379675 A JP12379675 A JP 12379675A JP 12379675 A JP12379675 A JP 12379675A JP S5248476 A JPS5248476 A JP S5248476A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
type field
complementary type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12379675A
Other languages
Japanese (ja)
Inventor
Ikuo Anada
Yoichi Sato
Kazumasa Ono
Hisakazu Mukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12379675A priority Critical patent/JPS5248476A/en
Publication of JPS5248476A publication Critical patent/JPS5248476A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate

Abstract

PURPOSE:To provent disconnection of wirings owing to film serration and obtain a C-MOS.IC having large threshold voltage and reduced source-drain junction capacity, by burying a thick SiO2 layer among MOS transistors.
JP12379675A 1975-10-16 1975-10-16 Process for production of complementary type field effect transistor i ntegrated circuit Pending JPS5248476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12379675A JPS5248476A (en) 1975-10-16 1975-10-16 Process for production of complementary type field effect transistor i ntegrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12379675A JPS5248476A (en) 1975-10-16 1975-10-16 Process for production of complementary type field effect transistor i ntegrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59000002A Division JPS59130457A (en) 1984-01-04 1984-01-04 Complementary type field effect semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5248476A true JPS5248476A (en) 1977-04-18

Family

ID=14869509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12379675A Pending JPS5248476A (en) 1975-10-16 1975-10-16 Process for production of complementary type field effect transistor i ntegrated circuit

Country Status (1)

Country Link
JP (1) JPS5248476A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919779A (en) * 1972-04-14 1974-02-21
JPS4991580A (en) * 1972-12-29 1974-09-02

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919779A (en) * 1972-04-14 1974-02-21
JPS4991580A (en) * 1972-12-29 1974-09-02

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