IT978097B - Dispositivo semiconduttore e me todo per la fabbricazione dello stesso - Google Patents

Dispositivo semiconduttore e me todo per la fabbricazione dello stesso

Info

Publication number
IT978097B
IT978097B IT19137/73A IT1913773A IT978097B IT 978097 B IT978097 B IT 978097B IT 19137/73 A IT19137/73 A IT 19137/73A IT 1913773 A IT1913773 A IT 1913773A IT 978097 B IT978097 B IT 978097B
Authority
IT
Italy
Prior art keywords
todo
manufacturing
same
semiconducting device
semiconducting
Prior art date
Application number
IT19137/73A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT978097B publication Critical patent/IT978097B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3222—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3224—Materials thereof being Group IIB-VIA semiconductors
    • H10P14/3231—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3422—Antimonides
IT19137/73A 1972-01-10 1973-01-10 Dispositivo semiconduttore e me todo per la fabbricazione dello stesso IT978097B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21637672A 1972-01-10 1972-01-10

Publications (1)

Publication Number Publication Date
IT978097B true IT978097B (it) 1974-09-20

Family

ID=22806816

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19137/73A IT978097B (it) 1972-01-10 1973-01-10 Dispositivo semiconduttore e me todo per la fabbricazione dello stesso

Country Status (10)

Country Link
JP (1) JPS5228634B2 (it)
AU (1) AU466927B2 (it)
BE (1) BE793800A (it)
CA (1) CA973976A (it)
DE (1) DE2300921A1 (it)
FR (1) FR2167831B1 (it)
GB (1) GB1417484A (it)
IT (1) IT978097B (it)
NL (1) NL7300350A (it)
SE (1) SE387473B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5264272A (en) * 1975-11-22 1977-05-27 Fujitsu Ltd Semiconductor crystal
CA1256590A (en) * 1985-03-15 1989-06-27 Yuichi Matsui Compound semiconductor device with layers having different lattice constants
GB2215514A (en) * 1988-03-04 1989-09-20 Plessey Co Plc Terminating dislocations in semiconductor epitaxial layers
JP2588280B2 (ja) * 1989-07-10 1997-03-05 シャープ株式会社 化合物半導体発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3493811A (en) * 1966-06-22 1970-02-03 Hewlett Packard Co Epitaxial semiconductor material on dissimilar substrate and method for producing the same

Also Published As

Publication number Publication date
GB1417484A (en) 1975-12-10
BE793800A (fr) 1973-05-02
AU5094273A (en) 1974-07-11
AU466927B2 (en) 1975-11-13
CA973976A (en) 1975-09-02
DE2300921A1 (de) 1973-07-19
NL7300350A (it) 1973-07-12
FR2167831A1 (it) 1973-08-24
SE387473B (sv) 1976-09-06
FR2167831B1 (it) 1977-12-30
JPS504977A (it) 1975-01-20
JPS5228634B2 (it) 1977-07-27

Similar Documents

Publication Publication Date Title
IT955675B (it) Dispositivo semiconduttore e metodo per la fabbricazione dello stesso
IT1025054B (it) Dispositivo semiconduttore stabilizzato e metodo di fabbricazione dello stesso
BE798699A (fr) Oreiller
AR201550A1 (es) Muneca y similares
IT980547B (it) Transistore ripolare e procedimento per la sua fabbricazione
IT1001443B (it) Confezione e procedimento per la fabbricazione della stessa
TR17446A (tr) 1-aminourasiler,bunlarin imaline dair usuller ve bunlarin herbisid olarak kullanilmalari
FI55755B (fi) Foerfarande foer framstaellning av en koagulerad mjoelkprodukt med ultrafiltrering
NO149734C (no) Fremgangsmaate for fremstilling av urea
TR17513A (tr) Fenilindol tuerevleri,bunlarin imali usulue,ve kullanilmalari
IT983793B (it) Dispositivo semiconduttore e me todo per la fabbricazione dello stesso
BR7406962D0 (pt) Rotor e dispositivo incluindo o mesmo
TR17380A (tr) Ueruen ve usul
SE7711953L (sv) N-(1-substituerade-3-pyrrolidinyl)-bensamider och tiobensamider
BR7208633D0 (pt) Valvula de escapamento refrigerada e seus metodos de fabricacao
IT1009603B (it) Dispositivo semiconduttore e metodo di fabbricazione dello stesso
IT995885B (it) Componente a semiconduttore e meto do per la fabbricazione dello stesso
IT978097B (it) Dispositivo semiconduttore e me todo per la fabbricazione dello stesso
FI55969C (fi) Daeckskoppling foer fjaerrstyrning av en fartygsdrivanlaeggning
IT978317B (it) Monoazopigmenti e procedimento per la loro preparazione
IT991003B (it) Dispositivo getter e metodo di utilizzazione dello stesso
BE801668A (fr) Amino-imidazo-isoquinoleines et amino-pyrazolo-isoquinoleines
BR7302648D0 (pt) Aparelho gravador e reprodutor
SE7607356L (sv) N-(dietylaminoetyl)-2-metoxi-4-amino-5-klorbensamid
IT987125B (it) Azocoloranti basici procedimento per la loro preparazione e loro impiego