SA516370630B1 - معدنة الخلايا الشمسية باستخدام الرقائق المعدنية - Google Patents
معدنة الخلايا الشمسية باستخدام الرقائق المعدنية Download PDFInfo
- Publication number
- SA516370630B1 SA516370630B1 SA516370630A SA516370630A SA516370630B1 SA 516370630 B1 SA516370630 B1 SA 516370630B1 SA 516370630 A SA516370630 A SA 516370630A SA 516370630 A SA516370630 A SA 516370630A SA 516370630 B1 SA516370630 B1 SA 516370630B1
- Authority
- SA
- Saudi Arabia
- Prior art keywords
- metal
- metal foil
- metal layer
- foil
- solar cell
- Prior art date
Links
- 239000002184 metal Substances 0.000 title claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 45
- 239000011888 foil Substances 0.000 title claims abstract description 25
- 238000001465 metallisation Methods 0.000 title description 3
- 125000006850 spacer group Chemical group 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims 3
- 241001492658 Cyanea koolauensis Species 0.000 claims 2
- 101100074717 Caenorhabditis elegans lge-1 gene Proteins 0.000 claims 1
- 206010011878 Deafness Diseases 0.000 claims 1
- 241000196324 Embryophyta Species 0.000 claims 1
- 101000958771 Homo sapiens N-acylethanolamine-hydrolyzing acid amidase Proteins 0.000 claims 1
- 101000654386 Homo sapiens Sodium channel protein type 9 subunit alpha Proteins 0.000 claims 1
- 101000713585 Homo sapiens Tubulin beta-4A chain Proteins 0.000 claims 1
- 102100038360 N-acylethanolamine-hydrolyzing acid amidase Human genes 0.000 claims 1
- 235000014548 Rubus moluccanus Nutrition 0.000 claims 1
- 244000191761 Sida cordifolia Species 0.000 claims 1
- 102100031367 Sodium channel protein type 9 subunit alpha Human genes 0.000 claims 1
- 241000399119 Spio Species 0.000 claims 1
- 102100036788 Tubulin beta-4A chain Human genes 0.000 claims 1
- 101000959121 Xenopus laevis Peptidyl-alpha-hydroxyglycine alpha-amidating lyase A Proteins 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 238000004021 metal welding Methods 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- 238000000608 laser ablation Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Laminated Bodies (AREA)
Abstract
يتعلق الاختراع الحالي بهيكل خلية شمسية solar cell structure (100) يشمل مناطق مشوبة من النوع الإيجابي والنوع السلبي. يتم تشكيل فاصل العازل الكهربائي dielectric spacer (103) على سطح هيكل الخلية الشمسية (100)، كما يتم تكوين طبقة معدنية metal layer (104) على فاصل العازل الكهربائي (103) وعلى سطح هيكل الخلية الشمسية (100) المعرض بالفاصل العازل الكهربائي (103). وتوضع الرقيقة المعدنية metal foil (105) على الطبقة المعدنية (104)، ويستخدم شعاع الليزر laser beam للحام الرقيقة المعدنية (105) بالطبقة المعدنية (104). يُستخدم شعاع الليزر أيضًا لعمل هيكل للرقيقة المعدنية (105). يقوم شعاع الليزر بتذويب ablates أجزاء من الرقيقة المعدنية (105) والطبقة المعدنية (104) التي تعلو الفاصل العازل الكهربائي (103). البتر الليزري للرقيقة المعدنية (105) يقطع الرقيقة المعدنية (105) إلى أصابع معدنية metal fingers من النوع الإيجابي والنوع السلبي (109 & 108). شكل 7.
Description
— \ — معدنة WIAD الشمسية باستخدام الرقائق المعدنية Metallization of solar cells using metal foils الوصف الكامل خلفية الاختراع ترتبط نماذج الموضوع المعني والموصوفة هنا بالخلايا الشمسية solar cells بشكل ale وعلى dag الخصوص 3 فإن نماذج الموضوع تتعلق بعمليات وهياكل تصنيع الخلية الشمسية .solar cell الخلايا الشمسية هي وسيلة معروفة جيدًا لتحويل الإشعاع الشمسي solar radiation إلى طاقة © كهربائية electrical energy تحتوي الخلية الشمسية على جانب أمامى يواجه الشمس خلال
العمليات الطبيعية لجمع الإشعاع الشمسي وجانب خلفي ي مقابل الجانب الأمامي. ارتطام الإشعاع الشمسي بالخلية الشمسية يولد شحنات كهريائية يمكن جمعها لتشغيل دائرة كهربائية خارجية» مثل الشحن. يمكن أن تتلقى الدائرة الكهربائية الخارجية التيار الكهربائي من الخلية الشمسية بطريقة الأصابع المعدنية المتصلة بمناطق مشوبة بالخلية الشمسية.
photovoltaic بتصنيع خلايا فولطائية ضوئية ٠0١٠٠0٠050877 تتعلق البراءة الأمريكية رقم ٠ .cells الفولطائية الضوئية WAN عام بمجالات dag 700701074678 تتعلق البراءة الأمريكية رقم طرقء dias ويشكل أكثر microelectronics والإلكترونيات الدقيقة |) 5 هيكليات»؛ وأجهزة متعلقة بالموصلات الكهربائية عالية الأداء والتعزيز الميكانيكى للخلايا الشمسية
١ الفولطائية الضوئية photovoltaic solar cells التماسية الخلفية. الوصف العام للاختراع يتعلق أحد نماذج الاختراع Jad) بطريقة لتصنيع خلية شمسية (solar cell تتضمن الطريقة: تشكيل فاصل عازل كهريائي dielectric spacer على سطح هيكل خلية شمسية solar cell structure ؛ تشكيل طبقة معدنية metal layer على فاصل العازل الكهربائي» منطقة مشوية
Claims (2)
- — \ — عناصر الحماية -١ طريقة لتصنيع خلية شمسية solar cell ؛ تتضمن الطريقة: تشكيل فاصل عازل dielectric spacer : خلية شمسية؛ 0 42 معدنية metal layer 0 كهربائي هيكل خلية شمسية؛ تشكيل طبقة معدنية tal layer فاصل العازل الكهربائي » منطقة مشوية من النوع السلبي ومنطقة مشوية من النوع J لإيجابي ٠ حيث تصل الطبقة المعدنية كهريائيًا metal layer electrically المنطقة المشوبة من النوع السلبي بالمنطقة © المشوية من النوع الإيجابي؛ وضع رقيقة معدنية metal foil على الطبقة المعدنية؛ dag وضع das المعدنية المعدنية metal foil بقة المعدنية؛ تتم قولبة الرقبقة المعدنية؛ حيث تخ الرقيقة المعدنية المعدنية tal foil الطبقة المعدنية؛ تتم قولبة الرقيقة المعدنية؛ حيث تشمل قولبة الرقيقة المعدنية إزالة أجزاء من الرقيقة المعدنية والطبقة المعدنية التي تعلو فاصل العازل الكهربائي. ٠ | ؟- الطريقة وفقاً لعنصر الحماية »١ حيث تشمل قولبة الرقيقة المعدنية Metal foil توجيه شعاع الليزر laser beam على الرقيقة المعدنية لبتر الرقيقة المعدنية . ؟- الطريقة Gig لعتصر الحماية Gua oF أيضًا ستأصل شعاء الليزر laser beam الأقل dR) و3 K يت أيضاً ب ع الليرر جزءًا من فاصل العازل الكهريائي تحت الطبقة المعدنية metal layer . Vo ¢— الطريقة وفقاً لعنصر الحماية o) تشمل أيضًا: لحام الرشقة المعدنية metal foil بالطبقة 4 وذ = ِِ م )2 ِ بالطب المعدنية .metal layer —o الطريقة وفقاً لعنصر الحماية ١؛ تشمل أيضًا: لحام الرقيقة المعدنية Metal foil بتوجيه شعاع ٠ الليزر laser beam على الرقيقة المعدنية . 1— الطريقة وفقاً لعنصر الحماية ١ حيث تتشكل الطبقة المعدنية metal layer على فاصل العازل الكهريائي بالترسيب deposition الشامل. م— ¢ \ — -١ الطريقة وفقاً لعنصر الحماية »١ حيث تتقولب الرقيقة المعدنية metal foil في الأصبع المعدني metal finger من النوع الإيجابي والأصبع المعدني metal finger من النوع السلبي؛ والأصبع المعدني من النوع الإيجابي ينفصل Gale وكهربائيًا من الأصبع المعدني من النوع السلبى. 2—A الطريقة وفقاً لعنصر الحماية ١ حيث يتم وضع الرقيقة المعدنية metal foil على الطبقة المعدنية metal layer لهيكل الخلية الشمسية solar cell structure والطبقة المعدنية metal layer الأخرى لهيكل حلية شمسية أخرى.٠ 4- الطريقة وفقاً لعنصر الحماية oA حيث تشمل قولبة الرقيقة المعدنية metal foil ترك اتصال كهربائي بين الأصابع المعدنية لهيكل الخلية الشمسية وهيكل الخلية الشمسية AY)Tivo_ \ اج ا 8 0 8 3 1 ا ا ل Ce i a 3 EE = k waren, نا cans alien يحت اسل دل اتات مال ماه الات حت لاست عت لاحتسا ان 3 ب ااا ههه َه أ ع ع > ةب ينب ا سل ١ شكا Sod Cor yey Ya Y 1 (IS Yat 1 1 1 ¢ * 5 x, ا 5 3 y 3 3 2 3 ; K + > i ta i © } - H oF i x oo [4 الما ا ا AU ااي ل الا SPIO ووم له Ue SONI: ON نبا كل الا ا ] ¥ كا1. i الب ur! FO Lo LE Ko يا NE, Pa wo ا al ا 3 3 S 1 : 0 3 8 > x 0 0 i 0 HN 0 0 8: 5 3 3 he LE بيت = 8 الا 1 1 E EC A ce 3 a ¥ = 4 Ea H = : 1 ا 0 3 3 1 8 I : ا ل or Ce ey 1 +4 + كا ا ؟ عصرح 7 PRN PRY + . ; Yad Fe Pry eX EEN Pet To 3 { o os 3 Y 3 بذ , pS a St we Meni i المسسسة wow الج 7 f j 0 HI i " 3 ta 0 3 = الل اا eo لقال التي أيه ا مي En ots a Sea ome enn و اعت هم مك م دا مر Fron ددا كا + شك + Led خخ ا Bet rR 8 H ; i 1 iN 3 1 0 AY § UR مر CRT جم سبيت SONNY roy, حي ESTE geen, SONU : we Sees الام صم جامد Boonton سد TE oe 1 0000 #8 8 = 8 ا ا 1 E <1 x A PR i Ea = 2 ف TTT Cet.AENEAN | الا EC AE SEER SRR.SRE RA ا ا ل 1 ا : ااا احم i Ly 0 Fah evoرص إْ | Il J 1 Il i | Id aay Sey Ya ححا 3 يك > 1 1 1 1 ! 1 BE م 9 7 7 TT PAE su TPO للد )سبيت pos) 2p ony i Tad ات WANES.SONAR J TIN... SOAS ORL.SONS I سس SNR J SOE. lh مد سسأ ص % on PRN + شكل Evo i he يز : ل ل if : | 1 00 \ . J 1 1 Ij Hy ode Lak Che الم wn Ea ye Toa Mak 0 : ) ES . vs I كم 1 ¢ Sie Ny “an i.E ا in 0 Sse, : al i ا ا 8 لل ل , ا د 1 ed : | | : ها gag wre fuk ih SEE it IA oe lo I ] 0-0 fy نال wo iV ow REE SERRE شي اموا اتا دا ما الات FINS TENN I SOS RIE Of SENS.IU 3 0 3 v x 3 ب تا الها وا“ 0 0 $ Yow F £ 4 & i j ا i 5 E 9 ْ: i سس أ 7 rm 1 vow Vat oe 3 EO i A نكا“ Ny Evoار B تَّ ب اج حا H i H 3 3 N 3 N 8 د N : 8 ل د 8 : k ¥ f 8 8 د 1 3 3 3 N 3 N HN N 8 N 3 AAAS تت يات AAA AAA AAA AAA AAA AAA AAA AAA LAA LEELA AA AAA EEE AAR rea & 5 IT “rt PI egy A A حت جرد مج و ERY. gang gia: Elf arin : oo ١ rr ١ pe تان SE oo - ١ |e © وح | !جد تجح aay | 8 ae EH RN iy EE 1 NERY 8 1 ٠ N FEE 33 EEE t NE ERE 14 IS hE kl ا 85 NE 3 HS LIE Th FI {1 HE i i id il NEES HE EEE § iE 33 ١ bs N FE 3 NE hE rv BN FE 1 ٍْ 8 :ا H 3 13 ur يحل H 0 0 5 8 :ل q4 NE 8 {3 by Hy hE 1 3 8 1: “© 3 EEN 5 3 H hy 38 EB hy ¥ aon 3 | ؟ EEE 38 1% EE 8 3% iE 3 N N KEE] IR 3 i Hy REY rv N 8 3 1:5 “© HEE WEE NEHER EINER ؟ أ :3 3 IEE NH OEE 143 NE ؟ | :3 ٠ 5 HERE 5015 ؟: Pond NH N 3 3 85 : N 8: : R 3 ؟: a3 I 8 5 EI N 1 3 ؟ ؟ | ؟:4 8 + : 85 N FE bE م ؛ | :3 8 8 #؟ N 13 HEI ER 8 ؟ | 13 8 8 yy OnE N 3% Ir PERE dy FE HN EERE c 33 0b 5 8 8 EEN ٠ hd 3 8 8 5 ER Ny :8 ؟: NS H N : i NER ERE 8 hE IF 8: Hy N EE 3 8 ؟ iE N i} [3 188 8 HEE 8 8 !ا 33 ih 3 IE 1 8 NEN © ؟ 1 “ 010] ؟ل k hE 8: NY H * 8 N Pv | N NH H NI ENE EI N ER a8 5 3 :8“ 8 0 33 3 0k 1 NE N 5 N aN aon ؟:؟ 4 ١! + ؟ RN H 3 H © :0 1 FEE N Ny 3 8 ay i ox :| ؟:؟ N 3 NEE 3 : ؟؟ ؟ Ny NH N 3 3 NEE ay |: * 8-0 ؟ Ef hE 3 5 k ax an 8 ؟ oF hE 3 3 AE 8 EI 338 NH tH] N 3 H ; NE 08 ؟ NNN ٠ 3 > 3 Ss 5 1 8 a aon °F 8 Ny Ny 3 8: aN oR 33 IN by iq 3 [3 k ay FI 8 )0 8 ؟ H FH 3 O33 i HEE 4 8 ؟ ؟ N 8 N id ER 3 38 ؟؟ ؟ i POY OBL OEE 3 | E 8 4 + ؟ ٠ ا NE i HH N FE i H §F i Hd 3 i 2: N HEH Fredy RR EI الم 8 N 3 م N لمعن Roe م N SES FOS 3 iyوا : «عشكيل فال Leah 8 Bl JF gS RE بين اطق 1 Tad دا ا ل dad 3 عن لبود انثا وقيع pte RE ea 3 1 حي RRR ذا عدا SR PEE eC م LI] ARR head pe g شدي BF الفماضل المازل SEL aS J 8 الصا : ال ِ اد ا حا ل : yg fad : حن ايع 3 FE ورج سي : : ا 0 ong 0 = نر ال x.RRC INS ni AE I it op تمه الرقرقة المسدنية نع البق لنمدتية 1 i i i i اتح i اللطقة Sond : Poe oe نحي بتار لاقب d a RR #1 : : En § ج اس اا ا 1 ا ري St لل اواج : اليه alee diet SBE RV البق ايع SERN va Biel Sain dy oa dy 3 نبا ع البتر SR لا اصرق ين .لزيا g . مجع ل انج الج سحلت ادا 3 oval + اتا »ا Tas مي © اللعدنية والطبقة المعلانية الى Lol ger العازل الكهريالي say Ya BGS Sr Evo-١7١- Nae دك nT 8 8 88 0 x 0 = 0 = a ل 4 الا 3 مس 4 ل x aE po EES 1 Bra اماد man Nm الجا نحي لح جا aa ا وبال بالا لوجيف يليا لك و بوب ME ا AER A Aaa م ا ا akan aaa? waned 1 1 Yaw LE Py ASA of a } SE LEY اي ٍ Nad LI م دك . SEK oad 1 0 الا Yad 1 حي 0 5 1 نح ER 3 ‘ : 5 ; bY iS 1 : i k ب" i 1: 8 i 4 | 1 و سبيت 1 0 Soy ال ا دحت اع سي RAL Je Lr eA es op vc Bg fe Ne انسش HR EE od SRE 3.
- 2 WR Lge 1 A اا oni HT SSE: SCR RAE SN, ECTS SEE SANE SERS SFE SCE ST NOES (NEES OCR THIER HIG spit NC NED (REE Si 7 Yaw ) LITE ve شا = eyoجد جلا جب ايا ايا لني + الك 1 نت { tad Yad { det bY X ht hN 3 0" 0 ,1 ا ص SS SU JN | 1 i 8 i 9 ا لالت ااال تي جيب ROR JO NI DE i i H 8 5 H of 3 = 2 OF ¥ on : 3 جح : bd ااا ااا ااا سات ناا أ كم 0 شكا ++ od 24 2 ] - ]| || || ] LEY 0 + 0 8 . : oo Kah 8# 8 ا LXE BES LEE rE 0 1 i AR الوك LO : لابحلا i 1 8 H ‘ : 8 i | )i 1 8 8 ny 4 NE NA Ted EN I SE 1 \ ow أله [ol ad ب !] ألاالس أ م D2 ا 2 = i 5 3 جاده دجبع #الد عدت د تجو لو مقع و عا اريم معدم اه eves ري هين يدتبي يرج ينوج جم أي من ا ادا جد عا جا جه مج J i 0 2 0 : J # 3 0 ص y i & 0 og 0 1 i ¥ م & 2 ا i 0 0 i ود ل ا جل ا CEN مكل ممدة سريان هذه البراءة عشرون سنة من تاريخ إيداع الطلب وذلك بشرط تسديد المقابل المالي السنوي للبراءة وعدم بطلانها أو سقوطها لمخالفتها لأي من أحكام نظام براءات الاختراع والتصميمات التخطيطية للدارات المتكاملة والأصناف النباتية والنماذج الصناعية أو لائحته التنفيذية صادرة عن مدينة الملك عبدالعزيز للعلوم والتقنية ؛ مكتب البراءات السعودي ص ب TAT الرياض 57؟؟١١ ¢ المملكة العربية السعودية بريد الكتروني: patents @kacst.edu.sa
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/040,047 US9437756B2 (en) | 2013-09-27 | 2013-09-27 | Metallization of solar cells using metal foils |
PCT/US2014/056794 WO2015047952A1 (en) | 2013-09-27 | 2014-09-22 | Metallization of solar cells using metal foils |
Publications (1)
Publication Number | Publication Date |
---|---|
SA516370630B1 true SA516370630B1 (ar) | 2019-04-11 |
Family
ID=52738910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SA516370630A SA516370630B1 (ar) | 2013-09-27 | 2016-02-27 | معدنة الخلايا الشمسية باستخدام الرقائق المعدنية |
Country Status (14)
Country | Link |
---|---|
US (3) | US9437756B2 (ar) |
EP (1) | EP3050122B1 (ar) |
JP (1) | JP6526020B2 (ar) |
KR (1) | KR102313263B1 (ar) |
CN (2) | CN105474412B (ar) |
AU (1) | AU2014327036B2 (ar) |
BR (1) | BR112016006585B1 (ar) |
CL (1) | CL2016000712A1 (ar) |
MX (1) | MX356833B (ar) |
MY (1) | MY175353A (ar) |
SA (1) | SA516370630B1 (ar) |
SG (1) | SG11201601079QA (ar) |
TW (1) | TWI633677B (ar) |
WO (1) | WO2015047952A1 (ar) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101620431B1 (ko) * | 2014-01-29 | 2016-05-12 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
US9911874B2 (en) * | 2014-05-30 | 2018-03-06 | Sunpower Corporation | Alignment free solar cell metallization |
CN106687617B (zh) * | 2014-07-15 | 2020-04-07 | 奈特考尔技术公司 | 激光转印ibc太阳能电池 |
US9461192B2 (en) | 2014-12-16 | 2016-10-04 | Sunpower Corporation | Thick damage buffer for foil-based metallization of solar cells |
US9620661B2 (en) | 2014-12-19 | 2017-04-11 | Sunpower Corporation | Laser beam shaping for foil-based metallization of solar cells |
US9997651B2 (en) | 2015-02-19 | 2018-06-12 | Sunpower Corporation | Damage buffer for solar cell metallization |
US20160380120A1 (en) | 2015-06-26 | 2016-12-29 | Akira Terao | Metallization and stringing for back-contact solar cells |
US9722103B2 (en) * | 2015-06-26 | 2017-08-01 | Sunpower Corporation | Thermal compression bonding approaches for foil-based metallization of solar cells |
US9634178B1 (en) * | 2015-12-16 | 2017-04-25 | Sunpower Corporation | Method of using laser welding to ohmic contact of metallic thermal and diffusion barrier layer for foil-based metallization of solar cells |
US9831377B2 (en) | 2016-02-29 | 2017-11-28 | Sunpower Corporation | Die-cutting approaches for foil-based metallization of solar cells |
US11424373B2 (en) | 2016-04-01 | 2022-08-23 | Sunpower Corporation | Thermocompression bonding approaches for foil-based metallization of non-metal surfaces of solar cells |
DE102016107802A1 (de) | 2016-04-27 | 2017-11-02 | Universität Stuttgart | Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium |
US20180006172A1 (en) * | 2016-07-01 | 2018-01-04 | Sunpower Corporation | Metallization structures for solar cells |
US9871150B1 (en) * | 2016-07-01 | 2018-01-16 | Sunpower Corporation | Protective region for metallization of solar cells |
US9882071B2 (en) * | 2016-07-01 | 2018-01-30 | Sunpower Corporation | Laser techniques for foil-based metallization of solar cells |
USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
US10115855B2 (en) * | 2016-09-30 | 2018-10-30 | Sunpower Corporation | Conductive foil based metallization of solar cells |
US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
USD877964S1 (en) | 2017-08-09 | 2020-03-10 | Flex Ltd. | Lighting module |
USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
WO2019195806A2 (en) | 2018-04-06 | 2019-10-10 | Sunpower Corporation | Local patterning and metallization of semiconductor structures using a laser beam |
WO2019195793A1 (en) * | 2018-04-06 | 2019-10-10 | Sunpower Corporation | Laser assisted metallization process for solar cell stringing |
CN112424956A (zh) * | 2018-04-06 | 2021-02-26 | 太阳能公司 | 使用激光束对半导体基板进行局部金属化 |
US11276785B2 (en) | 2018-04-06 | 2022-03-15 | Sunpower Corporation | Laser assisted metallization process for solar cell fabrication |
US11646387B2 (en) * | 2018-04-06 | 2023-05-09 | Maxeon Solar Pte. Ltd. | Laser assisted metallization process for solar cell circuit formation |
CN108873172A (zh) * | 2018-06-29 | 2018-11-23 | 中国科学院上海光学精密机械研究所 | 一种片上电可调高品质薄膜微光学器件的制备方法 |
EP3588584A1 (en) | 2018-06-29 | 2020-01-01 | Total SA | Solar cells and metallization process and device |
WO2020205983A1 (en) * | 2019-04-01 | 2020-10-08 | Stinger Advanced Manufacturing Corporation | Systems and methods for non-continuous deposition of a component |
US11527611B2 (en) | 2020-11-09 | 2022-12-13 | The Aerospace Corporation | Method of forming nanowire connects on (photovoltiac) PV cells |
Family Cites Families (110)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4058418A (en) | 1974-04-01 | 1977-11-15 | Solarex Corporation | Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth |
US3993533A (en) | 1975-04-09 | 1976-11-23 | Carnegie-Mellon University | Method for making semiconductors for solar cells |
US4318938A (en) | 1979-05-29 | 1982-03-09 | The University Of Delaware | Method for the continuous manufacture of thin film solar cells |
DE3036260A1 (de) | 1980-09-26 | 1982-04-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung von elektrischen kontakten an einer silizium-solarzelle |
US4400577A (en) | 1981-07-16 | 1983-08-23 | Spear Reginald G | Thin solar cells |
US4433200A (en) | 1981-10-02 | 1984-02-21 | Atlantic Richfield Company | Roll formed pan solar module |
US4482780A (en) | 1982-11-30 | 1984-11-13 | The United States Of America As Represented By The United States Department Of Energy | Solar cells with low cost substrates and process of making same |
US4461922A (en) | 1983-02-14 | 1984-07-24 | Atlantic Richfield Company | Solar cell module |
US4511600A (en) | 1984-02-10 | 1985-04-16 | Solarex Corporation | Solar cell metal spray process |
US4957601A (en) | 1984-09-04 | 1990-09-18 | Texas Instruments Incorporated | Method of forming an array of apertures in an aluminum foil |
US4691076A (en) | 1984-09-04 | 1987-09-01 | Texas Instruments Incorporated | Solar array with aluminum foil matrix |
US4917752A (en) | 1984-09-04 | 1990-04-17 | Texas Instruments Incorporated | Method of forming contacts on semiconductor members |
US4581103A (en) | 1984-09-04 | 1986-04-08 | Texas Instruments Incorporated | Method of etching semiconductor material |
US4582588A (en) | 1984-09-04 | 1986-04-15 | Texas Instruments Incorporated | Method of anodizing and sealing aluminum |
US4697041A (en) | 1985-02-15 | 1987-09-29 | Teijin Limited | Integrated solar cells |
US4617421A (en) | 1985-04-01 | 1986-10-14 | Sovonics Solar Systems | Photovoltaic cell having increased active area and method for producing same |
US4695674A (en) | 1985-08-30 | 1987-09-22 | The Standard Oil Company | Preformed, thin-film front contact current collector grid for photovoltaic cells |
DE3725269A1 (de) | 1987-07-30 | 1989-02-09 | Messerschmitt Boelkow Blohm | Verfahren zum einkapseln von mikroelektronischen halbleiter- und schichtschaltungen |
US5010040A (en) | 1988-12-30 | 1991-04-23 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US5091319A (en) | 1989-07-31 | 1992-02-25 | Hotchkiss Gregory B | Method of affixing silicon spheres to a foil matrix |
US5011567A (en) | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US5032233A (en) | 1990-09-05 | 1991-07-16 | Micron Technology, Inc. | Method for improving step coverage of a metallization layer on an integrated circuit by use of a high melting point metal as an anti-reflective coating during laser planarization |
US5093279A (en) | 1991-02-01 | 1992-03-03 | International Business Machines Corporation | Laser ablation damascene process |
AU651486B2 (en) | 1991-08-30 | 1994-07-21 | Canon Kabushiki Kaisha | Photoelectric conversion element and fabrication method thereof |
US5472772A (en) | 1994-04-18 | 1995-12-05 | General Electric Company | Method for welding stacker laminations and article therefrom |
US6141497A (en) | 1995-06-09 | 2000-10-31 | Marotta Scientific Controls, Inc. | Multilayer micro-gas rheostat with electrical-heater control of gas flow |
US6387803B2 (en) | 1997-01-29 | 2002-05-14 | Ultratech Stepper, Inc. | Method for forming a silicide region on a silicon body |
WO1998037740A1 (en) | 1997-02-21 | 1998-08-27 | Koninklijke Philips Electronics N.V. | A method of selectively metallizing a substrate using a hot foil embossing technique |
US5951786A (en) | 1997-12-19 | 1999-09-14 | Sandia Corporation | Laminated photovoltaic modules using back-contact solar cells |
JPH11243224A (ja) | 1997-12-26 | 1999-09-07 | Canon Inc | 光起電力素子モジュール及びその製造方法並びに非接触処理方法 |
EP1051885A1 (en) | 1998-02-06 | 2000-11-15 | FLEXcon Company, Inc. | Thin film transferable electric components |
US6159832A (en) | 1998-03-18 | 2000-12-12 | Mayer; Frederick J. | Precision laser metallization |
US6175075B1 (en) | 1998-04-21 | 2001-01-16 | Canon Kabushiki Kaisha | Solar cell module excelling in reliability |
DE60034840T3 (de) | 1999-03-23 | 2011-02-24 | Kaneka Corp., Osaka-shi | Photovoltaisches Modul |
JP2001007362A (ja) | 1999-06-17 | 2001-01-12 | Canon Inc | 半導体基材および太陽電池の製造方法 |
US6825550B2 (en) | 1999-09-02 | 2004-11-30 | Micron Technology, Inc. | Board-on-chip packages with conductive foil on the chip surface |
AU2001282581A1 (en) | 2000-09-01 | 2002-03-13 | Showa Denko K K | Apparatus for producing capacitor element member |
AU2002238953B2 (en) | 2001-03-19 | 2007-03-29 | Shin-Etsu Chemical Co., Ltd | Solar cell and its manufacturing method |
WO2003032957A2 (en) | 2001-06-28 | 2003-04-24 | Microchips, Inc. | Methods for hermetically sealing microchip reservoir devices |
JP3809353B2 (ja) | 2001-08-02 | 2006-08-16 | キヤノン株式会社 | Id付き加工物の製造方法 |
US7106939B2 (en) | 2001-09-19 | 2006-09-12 | 3M Innovative Properties Company | Optical and optoelectronic articles |
US6635307B2 (en) | 2001-12-12 | 2003-10-21 | Nanotek Instruments, Inc. | Manufacturing method for thin-film solar cells |
US20060166023A1 (en) | 2002-09-06 | 2006-07-27 | Dai Nippon Printing Co., Ltd. | Backside protective sheet for solar battery module and solar battery module using the same |
JP2004103959A (ja) | 2002-09-11 | 2004-04-02 | Matsushita Electric Ind Co Ltd | 太陽電池およびその製造方法 |
DE10245928B4 (de) | 2002-09-30 | 2006-03-23 | Infineon Technologies Ag | Verfahren zur strukturierten, selektiven Matallisierung einer Oberfläche eines Substrats |
US8222072B2 (en) * | 2002-12-20 | 2012-07-17 | The Trustees Of Princeton University | Methods of fabricating devices by low pressure cold welding |
US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
EP1634673A4 (en) | 2003-04-25 | 2009-04-08 | Nitto Denko Corp | METHOD FOR PRODUCING A LASER-TREATED PRODUCT AND AN ADHESIVE SHEET FOR A LASER TREATMENT USED FOR THIS PRODUCT |
US7494896B2 (en) | 2003-06-12 | 2009-02-24 | International Business Machines Corporation | Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer |
DE10349749B3 (de) | 2003-10-23 | 2005-05-25 | Infineon Technologies Ag | Anti-Fuse-Verbindung für integrierte Schaltungen sowie Verfahren zur Herstellung von Anti-Fuse-Verbindungen |
JP4059842B2 (ja) * | 2003-12-05 | 2008-03-12 | シャープ株式会社 | 太陽電池セルおよび太陽電池モジュール |
KR100610462B1 (ko) | 2004-02-20 | 2006-08-08 | 엔이씨 도낀 가부시끼가이샤 | 고체 전해 커패시터, 전송선로장치, 그 제조방법 및 그것을이용하는 복합 전자부품 |
KR100594277B1 (ko) * | 2004-05-25 | 2006-06-30 | 삼성전자주식회사 | 포토 다이오드 및 그 제조방법 |
JP2006040938A (ja) | 2004-07-22 | 2006-02-09 | Nec Tokin Corp | 固体電解コンデンサ、それを用いた積層コンデンサおよびその製造方法 |
US20080223429A1 (en) | 2004-08-09 | 2008-09-18 | The Australian National University | Solar Cell (Sliver) Sub-Module Formation |
DE102004050269A1 (de) * | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
US7358151B2 (en) | 2004-12-21 | 2008-04-15 | Sony Corporation | Microelectromechanical system microphone fabrication including signal processing circuitry on common substrate |
US7554055B2 (en) | 2005-05-03 | 2009-06-30 | Hitachi Global Storage Technologies Netherlands B.V. | Method for making ohmic contact to silicon structures with low thermal loads |
JP2006324555A (ja) | 2005-05-20 | 2006-11-30 | Nec Tokin Corp | 積層型コンデンサ及びその製造方法 |
DE102005041099A1 (de) | 2005-08-30 | 2007-03-29 | Osram Opto Semiconductors Gmbh | LED-Chip mit Glasbeschichtung und planarer Aufbau- und Verbindungstechnik |
US20070295399A1 (en) * | 2005-12-16 | 2007-12-27 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
JP4842118B2 (ja) | 2006-01-24 | 2011-12-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7795600B2 (en) | 2006-03-24 | 2010-09-14 | Goldeneye, Inc. | Wavelength conversion chip for use with light emitting diodes and method for making same |
DE102006040352B3 (de) | 2006-08-29 | 2007-10-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Aufbringen von elektrischen Kontakten auf halbleitende Substrate, halbleitendes Substrat und Verwendung des Verfahrens |
DE102006044936B4 (de) | 2006-09-22 | 2008-08-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Metallisierung von Solarzellen und dessen Verwendung |
US20080128019A1 (en) | 2006-12-01 | 2008-06-05 | Applied Materials, Inc. | Method of metallizing a solar cell substrate |
WO2008069456A1 (en) | 2006-12-05 | 2008-06-12 | Electronics And Telecommunications Research Institute | Planar lightwave circuit(plc) device, wavelength tunable light source comprising the same device and wavelength division multiplexing-passive optical network(wdm-pon) using the same light source |
EP2100336A4 (en) | 2006-12-22 | 2013-04-10 | Applied Materials Inc | INTERCONNECTION TECHNOLOGIES FOR REAR CONTACT SOLAR CELLS AND MODULES |
US7755292B1 (en) | 2007-01-22 | 2010-07-13 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Ultraminiature broadband light source and method of manufacturing same |
US8066840B2 (en) * | 2007-01-22 | 2011-11-29 | Solopower, Inc. | Finger pattern formation for thin film solar cells |
US7804022B2 (en) | 2007-03-16 | 2010-09-28 | Sunpower Corporation | Solar cell contact fingers and solder pad arrangement for enhanced efficiency |
CN101689580B (zh) | 2007-03-16 | 2012-09-05 | Bp北美公司 | 太阳能电池 |
US8471141B2 (en) * | 2007-05-07 | 2013-06-25 | Nanosolar, Inc | Structures for low cost, reliable solar roofing |
US8866150B2 (en) | 2007-05-31 | 2014-10-21 | Cree, Inc. | Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts |
TWI450401B (zh) | 2007-08-28 | 2014-08-21 | Mosel Vitelic Inc | 太陽能電池及其製造方法 |
JP5252472B2 (ja) | 2007-09-28 | 2013-07-31 | シャープ株式会社 | 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール |
US20120125256A1 (en) | 2007-10-06 | 2012-05-24 | Solexel, Inc. | Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template |
JP2009130116A (ja) | 2007-11-22 | 2009-06-11 | Sharp Corp | 素子間配線部材、光電変換素子およびこれらを用いた光電変換素子接続体ならびに光電変換モジュール |
EP2239788A4 (en) * | 2008-01-30 | 2017-07-12 | Kyocera Corporation | Solar battery element and solar battery element manufacturing method |
JP4870100B2 (ja) | 2008-01-30 | 2012-02-08 | 日清紡ホールディングス株式会社 | テープ状体の配設装置 |
US8481845B2 (en) | 2008-02-05 | 2013-07-09 | Gtat Corporation | Method to form a photovoltaic cell comprising a thin lamina |
DE102008013446A1 (de) * | 2008-02-15 | 2009-08-27 | Ersol Solar Energy Ag | Verfahren zur Herstellung monokristalliner n-Silizium-Solarzellen sowie Solarzelle, hergestellt nach einem derartigen Verfahren |
US20110192445A1 (en) | 2008-03-13 | 2011-08-11 | Florian Solzbacher | High precision, high speed solar cell arrangement to a concentrator lens array and methods of making the same |
US8309388B2 (en) | 2008-04-25 | 2012-11-13 | Texas Instruments Incorporated | MEMS package having formed metal lid |
DE102008021167B3 (de) | 2008-04-28 | 2010-01-21 | Siemens Aktiengesellschaft | Verfahren zur Erzeugung einer hermetisch dichten, elektrischen Durchführung mittels exothermer Nanofolie und damit hergestellte Vorrichtung |
US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
JP2010028017A (ja) | 2008-07-24 | 2010-02-04 | Fuji Electric Device Technology Co Ltd | 薄型インダクタおよびその製造方法と、この薄型インダクタを用いた超小型電力変換装置 |
DE102008062591A1 (de) | 2008-08-08 | 2010-03-04 | Deutsche Cell Gmbh | Halbleiter-Bauelement |
US7951637B2 (en) * | 2008-08-27 | 2011-05-31 | Applied Materials, Inc. | Back contact solar cells using printed dielectric barrier |
WO2010025269A1 (en) | 2008-08-27 | 2010-03-04 | Applied Materials, Inc. | Back contact solar cell modules |
KR101639786B1 (ko) | 2009-01-14 | 2016-07-15 | 코닌클리케 필립스 엔.브이. | 기판 상에 적어도 하나의 전기 전도성 막을 퇴적하는 방법 |
US8207443B2 (en) | 2009-01-27 | 2012-06-26 | Applied Materials, Inc. | Point contacts for polysilicon emitter solar cell |
EP2412030A2 (en) | 2009-03-26 | 2012-02-01 | BP Corporation North America Inc. | Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions |
US8021919B2 (en) | 2009-03-31 | 2011-09-20 | Infineon Technologies Ag | Method of manufacturing a semiconductor device |
JP2011054831A (ja) | 2009-09-03 | 2011-03-17 | Sharp Corp | バックコンタクト型太陽電池セル、太陽電池ストリングおよび太陽電池モジュール |
KR20110047861A (ko) * | 2009-10-30 | 2011-05-09 | 삼성전자주식회사 | 태양 전지 및 이의 제조 방법 |
FR2957479B1 (fr) | 2010-03-12 | 2012-04-27 | Commissariat Energie Atomique | Procede de traitement d'un contact metallique realise sur un substrat |
MY158500A (en) | 2010-08-05 | 2016-10-14 | Solexel Inc | Backplane reinforcement and interconnects for solar cells |
KR101172195B1 (ko) | 2010-09-16 | 2012-08-07 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
US8975510B2 (en) | 2011-03-25 | 2015-03-10 | Cellink Corporation | Foil-based interconnect for rear-contact solar cells |
US20130137244A1 (en) | 2011-05-26 | 2013-05-30 | Solexel, Inc. | Method and apparatus for reconditioning a carrier wafer for reuse |
DE102011104159A1 (de) | 2011-06-14 | 2012-12-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zum elektrischen verbinden mehrerer solarzellen und photovoltaikmodul |
US20130228221A1 (en) | 2011-08-05 | 2013-09-05 | Solexel, Inc. | Manufacturing methods and structures for large-area thin-film solar cells and other semiconductor devices |
US8563364B2 (en) | 2011-09-29 | 2013-10-22 | Infineon Technologies Ag | Method for producing a power semiconductor arrangement |
US20130160825A1 (en) | 2011-12-22 | 2013-06-27 | E I Du Pont De Nemours And Company | Back contact photovoltaic module with glass back-sheet |
WO2013106225A1 (en) | 2012-01-12 | 2013-07-18 | Applied Materials, Inc. | Methods of manufacturing solar cell devices |
US8513045B1 (en) * | 2012-01-31 | 2013-08-20 | Sunpower Corporation | Laser system with multiple laser pulses for fabrication of solar cells |
CN104170095B (zh) * | 2012-03-14 | 2016-10-19 | Imec非营利协会 | 用于制造具有镀敷触点的光伏电池的方法 |
US8859322B2 (en) | 2012-03-19 | 2014-10-14 | Rec Solar Pte. Ltd. | Cell and module processing of semiconductor wafers for back-contacted solar photovoltaic module |
US9040409B2 (en) | 2013-03-15 | 2015-05-26 | Applied Materials, Inc. | Methods of forming solar cells and solar cell modules |
-
2013
- 2013-09-27 US US14/040,047 patent/US9437756B2/en active Active
-
2014
- 2014-09-22 EP EP14847743.3A patent/EP3050122B1/en active Active
- 2014-09-22 CN CN201480046849.0A patent/CN105474412B/zh active Active
- 2014-09-22 BR BR112016006585-9A patent/BR112016006585B1/pt active IP Right Grant
- 2014-09-22 MY MYPI2016000345A patent/MY175353A/en unknown
- 2014-09-22 MX MX2016003561A patent/MX356833B/es active IP Right Grant
- 2014-09-22 JP JP2016545766A patent/JP6526020B2/ja active Active
- 2014-09-22 WO PCT/US2014/056794 patent/WO2015047952A1/en active Application Filing
- 2014-09-22 SG SG11201601079QA patent/SG11201601079QA/en unknown
- 2014-09-22 AU AU2014327036A patent/AU2014327036B2/en active Active
- 2014-09-22 CN CN201711214605.0A patent/CN108039380B/zh active Active
- 2014-09-22 KR KR1020167010446A patent/KR102313263B1/ko active IP Right Grant
- 2014-09-23 TW TW103132752A patent/TWI633677B/zh active
-
2016
- 2016-02-27 SA SA516370630A patent/SA516370630B1/ar unknown
- 2016-03-24 CL CL2016000712A patent/CL2016000712A1/es unknown
- 2016-08-05 US US15/230,163 patent/US9865753B2/en active Active
-
2017
- 2017-12-05 US US15/832,447 patent/US10930804B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
MX2016003561A (es) | 2016-06-02 |
WO2015047952A1 (en) | 2015-04-02 |
CN105474412A (zh) | 2016-04-06 |
EP3050122B1 (en) | 2020-06-17 |
AU2014327036B2 (en) | 2018-07-05 |
EP3050122A4 (en) | 2016-09-21 |
CL2016000712A1 (es) | 2016-12-16 |
TWI633677B (zh) | 2018-08-21 |
MX356833B (es) | 2018-06-15 |
US9865753B2 (en) | 2018-01-09 |
KR102313263B1 (ko) | 2021-10-14 |
BR112016006585A2 (pt) | 2017-08-01 |
CN108039380B (zh) | 2020-07-10 |
US10930804B2 (en) | 2021-02-23 |
EP3050122A1 (en) | 2016-08-03 |
US20150090329A1 (en) | 2015-04-02 |
US20180097129A1 (en) | 2018-04-05 |
TW201521220A (zh) | 2015-06-01 |
CN105474412B (zh) | 2018-01-02 |
SG11201601079QA (en) | 2016-03-30 |
BR112016006585B1 (pt) | 2021-08-03 |
AU2014327036A1 (en) | 2015-12-17 |
US20160343888A1 (en) | 2016-11-24 |
MY175353A (en) | 2020-06-22 |
CN108039380A (zh) | 2018-05-15 |
JP6526020B2 (ja) | 2019-06-05 |
US9437756B2 (en) | 2016-09-06 |
KR20160061368A (ko) | 2016-05-31 |
JP2016536808A (ja) | 2016-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SA516370630B1 (ar) | معدنة الخلايا الشمسية باستخدام الرقائق المعدنية | |
JP5740372B2 (ja) | 半導体メモリカード | |
CN104157805B (zh) | 车辆用蓄电装置 | |
WO2012148100A3 (ko) | 신규한 구조의 버스 바 및 이를 포함하는 전지모듈 | |
WO2008033113A3 (en) | Electrocatalysts having gold monolayers on platinum nanoparticle cores, and uses thereof | |
CO6251348A2 (es) | Conector de montaje que incluye una pieza de enchufe particularmente cables predeterminados | |
ES2759328T3 (es) | Célula solar | |
WO2010132448A3 (en) | Isolated metallic flexible back sheet for solar module encapsulation | |
WO2010138334A3 (en) | Enhanced efficiency solar cells and method of manufacture | |
EP2631953A3 (en) | Solar cell module | |
US9194839B2 (en) | Analytical cell | |
JP2016529724A (ja) | モノリシックに相互接続された薄膜ソーラーセルの製造のための、基板上の薄膜のレーザーによる構造化の方法、及び薄膜ソーラーモジュールの製造方法 | |
SA516370819B1 (ar) | الأجزاء المعدنية التي تغير شكلها ميكانيكًا | |
US9997654B2 (en) | Solar cell receiver | |
US20170133981A1 (en) | Photovoltaic Junction Box and Diode | |
CN107078248B (zh) | 具有改进的安全性的电池 | |
WO2012104198A3 (de) | Photovoltaische solarzelle sowie verfahren zu deren herstellung | |
WO2011059611A3 (en) | Memory arrays and associated methods of manufacturing | |
US20070207639A1 (en) | Electric connection box | |
US9954484B2 (en) | Solar battery module | |
WO2012117775A1 (ja) | 太陽電池モジュール、および太陽電池モジュールの製造方法 | |
US20150294835A1 (en) | Analytical cell | |
WO2011045013A3 (de) | Vorrichtung zur konzentrierung und umwandlung von solarenergie | |
CN107819092A (zh) | 一种电池托盘 | |
Kunrugsa | Two-dimensional simulation of GaAsSb/GaAs quantum dot solar cells |