JP6526020B2 - 金属箔を使用した太陽電池の金属化 - Google Patents
金属箔を使用した太陽電池の金属化 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims description 289
- 239000002184 metal Substances 0.000 title claims description 289
- 239000011888 foil Substances 0.000 title claims description 151
- 238000001465 metallisation Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims description 80
- 125000006850 spacer group Chemical group 0.000 claims description 61
- 238000000059 patterning Methods 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 238000003466 welding Methods 0.000 claims description 18
- 238000000608 laser ablation Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Description
[項目1]
太陽電池の製造方法であって、
太陽電池構造体の表面に誘電体スペーサを形成する工程と、
上記誘電体スペーサ、N型ドープ領域、及びP型ドープ領域上に、上記N型ドープ領域を上記P型ドープ領域と電気的に接続する金属層を形成する工程と、
上記金属層に金属箔を配置する工程と、
上記金属層に上記金属箔を配置した後に上記金属箔をパターニングする工程と
を含み、上記金属箔をパターニングする工程は、上記誘電体スペーサ上に存在する上記金属箔及び上記金属層の複数の部分を除去する工程を含む、方法。
[項目2]
上記金属箔をパターニングする工程は、上記金属箔にレーザ光を向けて上記金属箔を切除する工程を含む、項目1に記載の方法。
[項目3]
上記レーザ光はまた、上記金属層の下に存在する上記誘電体スペーサの少なくとも一部分をも切除する、項目2に記載の方法。
[項目4]
上記金属箔を上記金属層に溶接する工程を更に含む、項目1に記載の方法。
[項目5]
上記金属箔にレーザ光を向けることにより、上記金属箔を上記金属層に溶接する工程を更に含む、項目1に記載の方法。
[項目6]
上記金属層は、ブランケット堆積によって上記誘電体スペーサに形成される、項目1に記載の方法。
[項目7]
上記金属箔は、P型金属フィンガー及びN型金属フィンガーにパターニングされ、上記P型金属フィンガーは、上記N型金属フィンガーから物理的及び電気的に分離される、項目1に記載の方法。
[項目8]
上記金属箔は、上記太陽電池構造体の上記金属層上に、及び別の太陽電池構造体の別の金属層上に配置される、項目1に記載の方法。
[項目9]
上記金属箔をパターニングする工程は、上記太陽電池構造体及び上記別の太陽電池構造体の金属フィンガー間の電気的接続を残す工程を含む、項目8に記載の方法。
[項目10]
太陽電池構造体であって、
N型ドープ領域及びP型ドープ領域と、
上記N型ドープ領域及び上記P型ドープ領域の上にある誘電体スペーサと、
上記誘電体スペーサ及び上記N型ドープ領域の上にあり、上記N型ドープ領域と電気的に接続される第1の金属層と、
上記誘電体スペーサ及び上記P型ドープ領域の上にあり、上記P型ドープ領域と電気的に接続される第2の金属層と、
上記第1の金属層と電気的に結合する第1の金属箔フィンガーと、
上記第2の金属層と電気的に結合する第2の金属箔フィンガーと、を含む、太陽電池構造体。
[項目11]
上記太陽電池は、全バックコンタクト型太陽電池を含む、項目10に記載の太陽電池構造体。
[項目12]
上記第1及び第2の金属箔フィンガーがアルミニウムを含む、項目10に記載の太陽電池構造体。
[項目13]
上記第1の金属箔フィンガーを上記第1の金属層に、及び第2の金属箔フィンガーを上記第2の金属層に取り付ける溶接接合点を更に含む、項目10に記載の太陽電池構造体。
[項目14]
太陽電池の製造方法であって、
太陽電池構造体の表面に誘電体スペーサを形成する工程と、
上記誘電体スペーサによって露出される、上記太陽電池構造体の上記表面の複数の部分上に金属層を堆積する工程と、
上記金属層に金属箔を取り付ける工程と、
上記金属層に上記金属箔を取り付けた後に、上記金属箔をパターニングする工程とを含む、方法。
[項目15]
上記金属箔を上記金属層に取り付けた後であるが上記金属箔をパターニングする前に、上記金属箔を上記金属層に溶接する工程を更に含む、項目14に記載の方法。
[項目16]
上記金属箔を上記金属層に取り付ける工程は、上記金属層上にアルミニウム箔のシートを配置する工程を含む、項目14に記載の方法。
[項目17]
上記金属箔をパターニングする工程は、上記金属箔にレーザ光を向けて上記金属箔及び上記金属層を切除する工程を含む、項目14に記載の方法。
[項目18]
上記金属層を上記誘電体スペーサ上に堆積することは、上記誘電体スペーサ上に金属のブランケット層を堆積することを含む、項目14に記載の方法。
[項目19]
上記誘電体スペーサを上記太陽電池構造体の上記表面に形成する工程は、上記誘電体スペーサを上記太陽電池構造体の上記表面に印刷する工程を含む、項目14に記載の方法。
[項目20]
上記金属箔を上記金属層に取り付けた後であるが上記金属箔をパターニングする前に、上記金属箔をレーザ光に向けて上記金属箔を上記金属層に溶接する工程を更に含む、項目14に記載の方法。
Claims (20)
- 太陽電池の製造方法であって、
太陽電池構造体の表面に誘電体スペーサを形成する工程と、
前記誘電体スペーサによって露出される、前記太陽電池構造体の前記表面の部分に金属層を堆積する工程と、
前記金属層に金属箔を取り付ける工程と、
前記金属層に前記金属箔を取り付けた後に前記金属箔をパターニングする工程と
を含む、方法。 - 前記金属箔を前記金属層に取り付けた後であるが前記金属箔をパターニングする前に、前記金属箔を前記金属層に溶接する工程を更に含む、請求項1に記載の方法。
- 前記金属箔を前記金属層に取り付ける工程は、前記金属層上にアルミニウム箔のシートを配置する工程を含む、請求項1または2に記載の方法。
- 前記金属箔をパターニングする工程は、前記金属箔にレーザ光を向けて前記金属箔及び前記金属層を切除する工程を含む、請求項1から3の何れか1つに記載の方法。
- 前記金属層を前記誘電体スペーサ上に堆積することは、前記誘電体スペーサ上に金属のブランケット層を堆積することを含む、請求項1から4の何れか1つに記載の方法。
- 前記誘電体スペーサを前記太陽電池構造体の前記表面に形成する工程は、前記誘電体スペーサを前記太陽電池構造体の前記表面に印刷する工程を含む、請求項1から5の何れか1つに記載の方法。
- 前記金属箔を前記金属層に取り付けた後であるが前記金属箔をパターニングする前に、前記金属箔にレーザ光を向けて前記金属箔を前記金属層に溶接する工程を更に含む、請求項1に記載の方法。
- 太陽電池の製造方法であって、
太陽電池構造体の隣接するP型及びN型ドープ領域の表面の上に誘電体スペーサを形成する工程と、
前記誘電体スペーサの上に金属層を形成する工程と、
金属箔を前記金属層に取り付ける工程と、
前記金属箔を前記金属層に取り付けた後の第1のレーザープロセスにおいて、前記金属箔をパターニングする工程と
を含む、方法。 - 前記金属箔を前記金属層に取り付けた後であるが前記金属箔をパターニングする前に、前記金属箔を前記金属層に溶接する工程を更に含む、請求項8に記載の方法。
- 前記金属箔を前記金属層に取り付ける工程は、前記金属層上にアルミニウム箔のシートを配置する工程を含む、請求項8または9に記載の方法。
- 前記金属層を前記誘電体スペーサの上に形成する工程は、前記誘電体スペーサ上に金属のブランケット層を堆積することを含む、請求項8から10の何れか1つに記載の方法。
- 前記誘電体スペーサは、前記太陽電池構造体の前記隣接するP型及びN型ドープ領域の前記表面の上に印刷される、請求項8から11の何れか1つに記載の方法。
- 前記金属箔を前記金属層に取り付けた後であるが前記金属箔をパターニングする前に、第2のレーザープロセスにおいて、前記金属箔を前記金属層に溶接する工程を更に含む、請求項8から12の何れか1つに記載の方法。
- 前記第1のレーザープロセス及び前記第2のレーザープロセスは、インサイチュで行われる、請求項13に記載の方法。
- 同一の前記第1のレーザープロセスにおいて、前記金属層及び前記金属箔をパターニングする工程を更に含む、請求項8から14の何れか1つに記載の方法。
- 太陽電池の製造方法であって、
太陽電池構造体の表面の上に誘電体スペーサを形成する工程と、
前記誘電体スペーサの上に金属層を形成する工程と、
金属箔を前記金属層に取り付ける工程と、
前記金属箔を前記金属層に取り付けた後のレーザーアブレーションプロセスにおいて、前記金属箔をパターニングする工程と、
レーザ溶接プロセスにおいて、前記金属箔を前記金属層に溶接する工程と
を含む、方法。 - 前記レーザーアブレーションプロセス及び前記レーザ溶接プロセスは、インサイチュで行われる、請求項16に記載の方法。
- 前記レーザーアブレーションプロセスは、前記金属層及び前記金属箔の両方をパターニングする、請求項16または17に記載の方法。
- 前記金属箔を前記金属層に取り付ける工程は、前記金属層上にアルミニウム箔のシートを配置する工程を含む、請求項16から18の何れか1つに記載の方法。
- 前記太陽電池構造体の前記表面の上に前記誘電体スペーサを形成する工程は、前記太陽電池構造体の前記表面の上に前記誘電体スペーサを印刷する工程を含む、請求項16から19のいずれか1つに記載の方法。
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PCT/US2014/056794 WO2015047952A1 (en) | 2013-09-27 | 2014-09-22 | Metallization of solar cells using metal foils |
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Also Published As
Publication number | Publication date |
---|---|
MY175353A (en) | 2020-06-22 |
US20180097129A1 (en) | 2018-04-05 |
JP2016536808A (ja) | 2016-11-24 |
CN105474412A (zh) | 2016-04-06 |
BR112016006585B1 (pt) | 2021-08-03 |
US10930804B2 (en) | 2021-02-23 |
US20160343888A1 (en) | 2016-11-24 |
TW201521220A (zh) | 2015-06-01 |
US9865753B2 (en) | 2018-01-09 |
CN105474412B (zh) | 2018-01-02 |
KR20160061368A (ko) | 2016-05-31 |
CN108039380B (zh) | 2020-07-10 |
EP3050122B1 (en) | 2020-06-17 |
WO2015047952A1 (en) | 2015-04-02 |
EP3050122A4 (en) | 2016-09-21 |
EP3050122A1 (en) | 2016-08-03 |
SA516370630B1 (ar) | 2019-04-11 |
AU2014327036B2 (en) | 2018-07-05 |
US9437756B2 (en) | 2016-09-06 |
CN108039380A (zh) | 2018-05-15 |
SG11201601079QA (en) | 2016-03-30 |
US20150090329A1 (en) | 2015-04-02 |
AU2014327036A1 (en) | 2015-12-17 |
TWI633677B (zh) | 2018-08-21 |
MX2016003561A (es) | 2016-06-02 |
KR102313263B1 (ko) | 2021-10-14 |
MX356833B (es) | 2018-06-15 |
CL2016000712A1 (es) | 2016-12-16 |
BR112016006585A2 (pt) | 2017-08-01 |
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