CN108039380B - 使用金属箔将太阳能电池金属化 - Google Patents
使用金属箔将太阳能电池金属化 Download PDFInfo
- Publication number
- CN108039380B CN108039380B CN201711214605.0A CN201711214605A CN108039380B CN 108039380 B CN108039380 B CN 108039380B CN 201711214605 A CN201711214605 A CN 201711214605A CN 108039380 B CN108039380 B CN 108039380B
- Authority
- CN
- China
- Prior art keywords
- solar cell
- cell structure
- type doped
- metal layer
- doped region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 220
- 239000002184 metal Substances 0.000 title claims abstract description 220
- 239000011888 foil Substances 0.000 title claims abstract description 105
- 238000001465 metallisation Methods 0.000 title description 5
- 125000006850 spacer group Chemical group 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 238000000608 laser ablation Methods 0.000 abstract description 15
- 238000003466 welding Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 30
- 238000000059 patterning Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
公开了一种太阳能电池结构,所述太阳能电池结构包括P型掺杂区和N型掺杂区。在所述太阳能电池结构的表面上形成电介质垫片(201)。在所述电介质垫片上以及所述太阳能电池结构的被所述电介质垫片暴露的表面上形成金属层(202)。将金属箔放置在所述金属层上(203)。使用激光束将所述金属箔焊接到所述金属层(204)。还使用激光束来图案化所述金属箔(204)。所述激光束烧蚀所述金属箔和所述金属层在所述电介质垫片上方的部分。所述金属箔的所述激光烧蚀将所述金属箔切割成单独的P型金属指和N型金属指。
Description
技术领域
本文所述主题的实施例整体涉及太阳能电池。更具体地讲,所述主题的实施例涉及太阳能电池制造工艺和结构。
背景技术
太阳能电池是为人们所熟知的用于将太阳辐射转换成电能的装置。太阳能电池具有正面和与正面相背对的背面,所述正面在正常操作期间面向太阳以收集太阳辐射。照射在太阳能电池上的太阳辐射产生可用于为外部电路(诸如负载)供电的电荷。外部电路可以通过连接到太阳能电池掺杂区的金属指来从太阳能电池接收电流。
发明内容
在一个实施例中,在太阳能电池结构的表面上形成电介质垫片。在电介质垫片上和太阳能电池结构的被电介质垫片暴露的表面上形成金属层。将金属箔放置在金属层上。使用激光束将金属箔焊接到金属层。还使用激光束来图案化金属箔。激光束烧蚀金属箔和金属层在电介质垫片上方的部分。金属箔的激光烧蚀将金属箔切割成单独的P型金属指和N型金属指。
本领域的技术人员在阅读包括附图和权利要求书的本公开全文之后,本公开的这些和其他特征对于他们而言将是显而易见的。
附图说明
当结合以下附图考虑时,通过参见具体实施方式和权利要求书可以更完全地理解所述主题,其中在所有附图中,类似的附图标记是指类似的元件。附图未按比例绘制。
图1至图7为剖视图,它们示意性地示出根据本公开实施例的制造太阳能电池的方法。
图8是根据本公开实施例的未图案化的金属箔的平面图。
图9是根据本公开实施例的图8的金属箔在图案化之后的平面图。
图10是根据本发明实施例的制造太阳能电池的方法的流程图。
图11和图12为剖视图,它们示意性地示出根据本公开实施例的金属箔模块级图案化。
图13和图14为剖视图,它们示意性地示出根据本公开实施例的金属箔与图案化金属层的一起使用。
具体实施方式
以下具体实施方式本质上只是例证性的,并非意图限制所述主题的实施例或此类实施例的应用和用途。如本文所用,词语“示例性”意指“作为例子、实例或举例说明”。本文描述为示例性的任何实施未必理解为相比其它实施优选的或有利的。此外,并不意图受前述技术领域、背景技术、发明内容或以下具体实施方式中提出的任何明示或暗示的理论的约束。
本说明书包括对“一个实施例”或“实施例”的提及。短语“在一个实施例中”或“在实施例中”的出现不一定是指同一实施例。特定的特征、结构或特性可以任何与本公开一致的合适方式加以组合。
在本发明中,提供了许多具体细节,诸如结构和方法的例子,以提供对实施例的全面理解。然而,本领域的技术人员将会认识到,这些实施例可在没有所述具体细节中的一者或多者的情况下实施。在其他情况下,未示出或描述为人们所熟知的细节,以避免实施例的方面模糊不清。
图1至图7为剖视图,它们示意性地示出根据本公开实施例的制造太阳能电池的方法。所制造的太阳能电池是完全背接触式太阳能电池,即N型掺杂区和P型掺杂区以及连接到N型掺杂区和P型掺杂区的金属指都在太阳能电池的背面上。
首先参见图1,其中示出了根据本公开实施例的太阳能电池结构100。在图1的例子中,太阳能电池结构100包括多个交替的N型掺杂区和P型掺杂区,这些掺杂区可以形成在太阳能电池基板101内或者太阳能电池基板101外部。例如,可以通过使N型掺杂剂和P型掺杂剂分别扩散进入太阳能电池基板101来形成N型掺杂区和P型掺杂区。在另一个例子中,N型掺杂区和P型掺杂区在形成在太阳能电池基板101上的单独材料层(诸如多晶硅)中形成。在该例子中,N型掺杂物和P型掺杂物被扩散到多晶硅(其可以有沟槽或可以没有沟槽)中以形成在多晶硅而不是太阳电池基板101中的N型掺杂区和P型掺杂区。例如,太阳能电池基板101可包括单晶硅片。
在图1的例子中,标记“N”和“P”示意性地表示N型掺杂区和P型掺杂区或到N型掺杂区和P型掺杂区的电连接。更具体地讲,标记“N”示意性地表示暴露的N型掺杂区或者N型掺杂区的暴露的金属连接。类似地,标记“P”示意性地表示暴露的P型掺杂区或者P型掺杂区的暴露的金属连接。太阳能电池结构100可因此表示所制造太阳能电池在到N型掺杂区和P型掺杂区的接触孔已经形成之后,但在将金属触指形成到N型掺杂区和P型掺杂区的金属化过程之前的结构。
在图1的例子中,N型掺杂区和P型掺杂区在太阳能电池结构100的背面上。太阳能电池结构100的背面与正面相背对,其正面在正常工作期间面向太阳以收集太阳辐射。
接着参考图2,多个电介质垫片103形成在太阳能电池结构100的表面上。在图2的例子中,电介质垫片103形成在太阳能电池结构100表面上的区域上,所述区域位于相邻的P型掺杂区和N型掺杂区之间界面上方。如可以理解的,电介质垫片103也可以形成在其他区域上,具体取决于太阳能电池结构100的细节。
在一个实施例中,通过丝网印刷将电介质垫片103印刷在太阳能电池结构100上。也可以使用其他电介质形成工艺形成电介质垫片103,包括通过旋涂和沉积(例如,化学气相沉积),然后通过图案化(例如,掩膜和蚀刻)。电介质垫片103可包含具有光学吸收剂、可锻电介质等的电介质材料。作为具体例子,电介质垫片103可包含丝网印刷在太阳能电池结构100上达1至10微米厚度的聚酰亚胺(例如,具有二氧化钛过滤器)。一般来讲,电介质垫片103可被构造成具有将阻挡(例如,通过吸收或反射)在金属箔105图案化过程中采用的激光束(参见图5)的厚度和组成,并且与被用来形成上覆金属层的工艺相容(例如,图3,金属层104)。
在图2的例子中,每个电介质垫片103形成在太阳能电池结构100的N型掺杂区和P型掺杂区上方。如在下文将更显而易见的,在随后的金属化工艺中,当金属箔在太阳能电池结构100上时,使用激光来使金属箔图案化。电介质垫片103有利地阻挡激光束,所述激光束可在金属箔105图案化期间透入到太阳能电池结构100。
如图3所示,金属层104形成在太阳能电池结构100上。金属层104为随后形成的金属指提供到N型掺杂区和P型掺杂区的电连接。在一个实施例中,金属层104包括在电介质垫片103上方适形的连续毯覆金属涂层。例如,金属层104可包含通过溅射、沉积或一些其他工艺在电介质垫片103、N型掺杂区、P型掺杂区上形成100埃至5微米(例如,0.3微米至1微米)厚度的铝。一般来讲,金属层104包含可结合到金属箔105的材料。例如,金属层104可以包含铝以促进焊接到铝金属箔105。在图3中,金属层104仍然使N型掺杂区电连接到P型掺杂区。金属层104随后被图案化以在金属箔105图案化期间使N型掺杂区与P型掺杂区分离。
接着参考图4,金属箔105大致位于太阳能电池结构100的上方。金属箔105之所以是“金属箔”,是因为它包括预制金属薄片。图8是金属箔105在制造工艺的该阶段的平面图。如图8所示,金属箔105未被图案化。如在下文将更显而易见的,在金属箔105已被贴合到金属层104之后,金属箔105随后被图案化以形成太阳能电池的金属指。
继续图5,金属箔105被放置在太阳电池结构100上。不同于沉积或涂覆在太阳能电池结构100上的金属,金属箔105是预制片材。在一个实施例中,金属箔105包括铝片。金属箔105被放置在太阳能电池结构100上,因为它没有形成在太阳能电池结构100上。在一个实施例中,金属箔105通过贴合到金属层104被放置在太阳能电池结构100上。贴合工艺可以包括将金属箔105压到金属层104,使得金属箔105与金属层104紧密接触。贴合工艺可能会导致金属箔105在金属层104的特征结构(例如,凸耳)上方适形。可使用真空将金属箔105压贴到金属层104,以在焊接期间获得它们之间小于10微米的间隙。还可以使用压板在焊接期间将金属箔105压贴到金属层104;之后移除压板以便进行激光烧蚀。
图6示出了在金属箔105电结合到金属层104之后的太阳能电池结构100。在图6的例子中,在将金属箔105压贴到金属层104时,通过将激光束指向金属箔105来使金属箔105焊接到金属层104。激光焊接工艺产生使金属箔105电结合到金属层104的焊缝106。因为金属箔105在制造工艺的该阶段未被图案化,所以金属箔105仍然电连接太阳能电池结构100的N型掺杂区和P型掺杂区。
继续图7,金属箔105被图案化以形成金属指108和109。在一个实施例中,通过烧蚀金属箔105和金属层104在电介质垫片103上方的部分,来使金属箔105图案化。可以使用激光束来烧蚀金属箔105和金属层104。激光烧蚀工艺可将金属箔105切割(见107)成至少两个单独的块,其中一块是电连接到N型掺杂区的金属指108,另一块是电连接到P型掺杂区的金属指109。激光烧蚀工艺切断了N型掺杂区和P型掺杂区通过金属层104和金属箔105的电连接。金属箔105与金属层104因此在同一步骤中被图案化,有利地降低了制造成本。
图9是根据本公开实施例的图7的图案化金属箔105的平面图。图9示出切口107使金属指108与金属指109在物理上分离。在图9的例子中,金属箔105被图案化以形成相互交叉的金属指108和109。也可以采用其他金属指设计,具体取决于太阳能电池。
转到图7,激光烧蚀工艺使用将金属箔105和金属层104从头到尾切割的激光束。根据激光烧蚀工艺的加工窗口,激光束也可以切割电介质垫片103的一些部分而不是将其切穿。电介质垫片103有利地阻挡原本可能到达并损坏太阳能电池结构100的激光束。电介质垫片103也有利地保护太阳能电池结构100免受机械损坏,诸如在金属箔105贴合到金属层104期间。电介质垫片103可留在完成的太阳能电池中,所以它们的使用不一定涉及在图案化金属箔105之后附加的去除步骤。
根据上述内容,本领域的普通技术人员将会知道,本公开的实施例提供了迄今未实现的其他优点。比起涉及沉积或电镀金属指的金属化工艺,使用金属箔来形成金属指的成本效益相对较高。电介质垫片103允许激光焊接工艺和激光烧蚀工艺在原位执行,即,在相同加工工位上逐项执行。电介质垫片103也能够使用激光束来在金属箔105在太阳能电池结构100上时图案化金属箔105。如可以理解的,比起以微米级精度放置和对齐独立的金属指条,金属箔片材的放置和对齐要容易得多。不同于蚀刻和其它基于化学的图案化工艺,使用激光来图案化金属箔105使得在所制造的太阳能电池上形成的残余物的量最小化。
但应进一步注意的是,在图9的例子中,金属层104与金属箔105被同时图案化。这有利地消除了在激光焊接和烧蚀之前将金属层104图案化以分离P型掺杂区和N型掺杂区的无关步骤。
图10示出根据本公开实施例的制造太阳能电池的方法的流程图。图10的方法可以在具有N型掺杂区和P型掺杂区的太阳能电池结构上执行。图10的方法可在太阳能电池制造期间以单元级执行,或者在太阳能电池与其他太阳能电池连接或一起封装时以模块级执行。注意,在各种实施例中,图10的方法可包括比图示更多或更少的框。
在图10的方法中,多个电介质垫片形成在太阳能电池结构的表面上(步骤201)。每个电介质垫片可形成在太阳能电池结构的N型掺杂区和P型掺杂区上方。例如,可通过丝网印刷、旋涂或通过沉积与图案化来形成电介质垫片。其后,金属层形成在电介质垫片上和太阳能电池结构的暴露在电介质垫片之间的表面上(步骤202)。在一个实施例中,金属层是通过毯覆式沉积形成的连续适形层。金属箔被贴合到金属层(步骤203)。在一个实施例中,使用激光束将金属箔焊接到金属层(步骤204)。应当注意,也可采用基于非激光的焊接技术来将金属箔焊接到金属层。激光束还可以用于烧蚀金属箔和金属层在电介质垫片上方的部分(步骤205)。激光烧蚀工艺将金属箔图案化成独立的金属指,并且将金属层图案化以分离P型掺杂区和N型掺杂区。
金属箔105的图案化可在所制造的太阳能电池与其他太阳能电池一起封装时以模块级执行。在该例子中,金属箔105可被贴合到多个太阳能电池结构100的金属层104。这在图11中示意性地示出,其中金属箔105A被贴合到两个或更多个太阳能电池结构100的金属层104。金属箔105A与上述金属箔105相同,不同的是金属箔105A跨越不止一个太阳能电池结构100。如图12所示,可在金属箔105A在太阳能电池结构100上时通过激光烧蚀将其图案化。如上所述,激光烧蚀工艺可将金属箔105A图案化成金属指108和109。可在图案化金属箔105A之后将其切割以在物理上分离太阳能电池结构100。在图案化之后,还可将金属箔105A的一些部分保留在适当的位置,以将相邻的太阳能电池结构100串接起来。
在一个实施例中,金属箔105A的激光烧蚀保留了相邻太阳能电池结构100的相反类型金属指之间的连接。这在图12的例子中示意性地示出,其中金属箔105被图案化,使一个太阳能电池结构100的P型金属指109保持连接到相邻太阳能电池结构100的N型金属指108,从而使太阳能电池结构100串联地电连接。这有利地节省了模块级制造步骤,因为金属箔105A的图案化可与太阳能电池结构100的串接相结合。
如所说明的,金属层104可形成为电连接P型掺杂区和N型掺杂区的金属毯覆层,并且随后在金属箔105图案化期间被图案化以使P型掺杂区和N型掺杂区分离。在其他实施例中,根据制造工艺的细节,金属层104可在激光焊接和烧蚀之前被图案化。这在图13中示意性地示出,其中金属层104形成在P型掺杂区和N型掺杂区上,而没有电连接它们。例如,可通过毯覆式沉积在电介质垫片103、N型掺杂区以及P型掺杂区上方沉积金属层104,然后将该层图案化(例如,通过掩膜和蚀刻)来使N型掺杂区与P型掺杂区分离,如图13所示。然后可将金属箔105放置在图案化的金属层104和电介质垫片103上,然后激光焊接到金属层104,再通过激光烧蚀将该金属箔图案化,如上所述。图14示意性地示出在该实施例中激光烧蚀工艺之后的N型金属指108和P型金属指109。该激光烧蚀工艺将金属箔105切穿,但在电介质垫片103处停止。
公开了用于制造太阳能电池的方法和结构。虽然已提供具体实施例,但应理解,这些实施例是为了进行示意性的说明而非限制目的。许多另外的实施例对于阅读本公开的本领域的技术人员而言将是显而易见的。
本公开的范围包括本文所公开的任何特征或特征组合(明示或暗示),或其任何概述,不管它是否缓解本文所解决的任何或全部问题。因此,可以在本申请(或对其要求优先权的申请)的审查过程期间对任何此类特征组合提出新的权利要求。具体地讲,参考所附权利要求书,来自从属权利要求的特征可与独立权利要求的那些特征相结合,以及来自相应的独立权利要求的特征可以按任何适当的方式组合,而并非只是以所附权利要求中所枚举的特定的组合。
Claims (23)
1.一种太阳能电池结构,包括:
形成在太阳能电池基板上的多晶硅层;
置于所述多晶硅层内的N型掺杂区和P型掺杂区;
电介质垫片,所述电介质垫片在所述N型掺杂区和所述P型掺杂区上方,其中所述电介质垫片包括激光切割部分;
第一金属层,所述第一金属层在所述N型掺杂区上方,其中所述第一金属层电连接到所述N型掺杂区;
第二金属层,所述第二金属层在所述P型掺杂区上方,其中所述第二金属层电连接到所述P型掺杂区;
第一金属箔指,所述第一金属箔指电结合到所述第一金属层;以及
第二金属箔指,所述第二金属箔指电结合到所述第二金属层。
2.根据权利要求1所述的太阳能电池结构,其中所述太阳能电池包括完全背接触式太阳能电池。
3.根据权利要求1所述的太阳能电池结构,其中所述第一金属箔指和所述第二金属箔指包含铝。
4.根据权利要求1所述的太阳能电池结构,还包括:
焊缝,所述焊缝将所述第一金属箔指附接到所述第一金属层并将所述第二金属箔指附接到所述第二金属层。
5.根据权利要求1所述的太阳能电池结构,其中所述金属层包含铝。
6.根据权利要求1所述的太阳能电池结构,其中所述金属层的厚度在0.3微米至1微米的范围内。
7.一种太阳能电池结构,包括:
形成在太阳能电池基板上的多晶硅层;
置于所述多晶硅层内的N型掺杂区和P型掺杂区;
电介质垫片,所述电介质垫片在所述N型掺杂区和所述P型掺杂区上方,其中所述电介质垫片包括激光切割部分;
第一金属层,所述第一金属层在所述电介质垫片的部分和所述N型掺杂区上方,其中所述第一金属层电连接到所述N型掺杂区;
第二金属层,所述第二金属层在所述电介质垫片的部分和所述P型掺杂区上方,其中所述第二金属层电连接到所述P型掺杂区;
第一金属箔指,所述第一金属箔指电结合到所述第一金属层;以及
第二金属箔指,所述第二金属箔指电结合到所述第二金属层。
8.根据权利要求7所述的太阳能电池结构,其中所述太阳能电池包括完全背接触式太阳能电池。
9.根据权利要求7所述的太阳能电池结构,其中所述第一金属箔指和所述第二金属箔指包含铝。
10.根据权利要求7所述的太阳能电池结构,还包括:
焊缝,所述焊缝将所述第一金属箔指附接到所述第一金属层并将所述第二金属箔指附接到所述第二金属层。
11.根据权利要求7所述的太阳能电池结构,其中所述金属层包含铝。
12.根据权利要求7所述的太阳能电池结构,其中所述金属层的厚度在0.3微米至1微米的范围内。
13.根据权利要求7所述的太阳能电池结构,其中所述N型掺杂区和所述P型掺杂区在太阳能电池基板内或在太阳能电池基板外。
14.根据权利要求7所述的太阳能电池结构,其中所述N型掺杂区和所述P型掺杂区在置于太阳能电池基板上的多晶硅层内。
15.一种太阳能电池结构组,包括:
第一太阳能电池结构,其包括:
形成在太阳能电池基板上的多晶硅层;
置于所述多晶硅层内的N型掺杂区和P型掺杂区;
电介质垫片,所述电介质垫片在所述第一太阳能电池结构的所述N型掺杂区和所述P型掺杂区上方,其中所述电介质垫片包括激光切割部分;
金属层,所述金属层在所述第一太阳能电池结构的所述P型掺杂区上方,其中所述第一太阳能电池结构的所述金属层电连接到所述P型掺杂区;第二太阳能电池结构,其包括:
形成在太阳能电池基板上的多晶硅层;
置于所述多晶硅层内的N型掺杂区和P型掺杂区;
电介质垫片,所述电介质垫片在所述第二太阳能电池结构的所述N型掺杂区和所述P型掺杂区上方,其中所述电介质垫片包括激光切割部分;
金属层,所述金属层在所述第二太阳能电池结构的所述N型掺杂区上方,其中所述第二太阳能电池结构的所述金属层电连接到所述N型掺杂区;以及
金属箔,所述金属箔电结合到所述第一太阳能电池结构的所述P型掺杂区上方的所述金属层并且所述金属箔电结合到所述第二太阳能电池结构的所述N型掺杂区上方的所述金属层。
16.根据权利要求15所述的太阳能电池结构组,其中所述第一太阳能电池结构的所述N型掺杂区和所述P型掺杂区在所述第一太阳能电池结构的第一太阳能电池基板中或在所述第一太阳能电池结构的第一太阳能电池基板外,所述第二太阳能电池结构的所述N型掺杂区和所述P型掺杂区在所述第二太阳能电池结构的第二太阳能电池基板中或在所述第二太阳能电池结构的第二太阳能电池基板外。
17.根据权利要求15所述的太阳能电池结构组,其中所述金属箔包含铝。
18.根据权利要求15所述的太阳能电池结构组,其中,所述金属箔包括:
第一金属箔指,所述第一金属箔指电结合到所述第一太阳能电池结构的所述金属层;以及
第二金属箔指,所述第二金属箔指电结合到所述第二太阳能电池结构的所述金属层。
19.根据权利要求18所述的太阳能电池结构组,还包括:
将所述第一金属箔指附接到所述第一太阳能电池结构的所述金属层以及将所述第二金属箔指附接到所述第二太阳能电池结构的所述金属层的焊缝。
20.根据权利要求15所述的太阳能电池结构组,其中所述第一太阳能电池结构和所述第二太阳能电池结构是完全背接触式太阳能电池结构。
21.根据权利要求15所述的太阳能电池结构组,其中所述金属层包含铝。
22.根据权利要求15所述的太阳能电池结构组,其中所述金属层的厚度在0.3微米至1微米的范围内。
23.根据权利要求15所述的太阳能电池结构组,其中所述第一太阳能电池结构的所述N型掺杂区和所述P型掺杂区置于所述第一太阳能电池结构的第一太阳能电池基板上的多晶硅层内,所述第二太阳能电池结构的所述N型掺杂区和所述P型掺杂区置于所述第二太阳能电池结构的第二太阳能电池基板上的多晶硅层内。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/040,047 | 2013-09-27 | ||
US14/040,047 US9437756B2 (en) | 2013-09-27 | 2013-09-27 | Metallization of solar cells using metal foils |
CN201480046849.0A CN105474412B (zh) | 2013-09-27 | 2014-09-22 | 使用金属箔将太阳能电池金属化 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480046849.0A Division CN105474412B (zh) | 2013-09-27 | 2014-09-22 | 使用金属箔将太阳能电池金属化 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108039380A CN108039380A (zh) | 2018-05-15 |
CN108039380B true CN108039380B (zh) | 2020-07-10 |
Family
ID=52738910
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480046849.0A Active CN105474412B (zh) | 2013-09-27 | 2014-09-22 | 使用金属箔将太阳能电池金属化 |
CN201711214605.0A Active CN108039380B (zh) | 2013-09-27 | 2014-09-22 | 使用金属箔将太阳能电池金属化 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480046849.0A Active CN105474412B (zh) | 2013-09-27 | 2014-09-22 | 使用金属箔将太阳能电池金属化 |
Country Status (14)
Country | Link |
---|---|
US (3) | US9437756B2 (zh) |
EP (1) | EP3050122B1 (zh) |
JP (1) | JP6526020B2 (zh) |
KR (1) | KR102313263B1 (zh) |
CN (2) | CN105474412B (zh) |
AU (1) | AU2014327036B2 (zh) |
BR (1) | BR112016006585B1 (zh) |
CL (1) | CL2016000712A1 (zh) |
MX (1) | MX356833B (zh) |
MY (1) | MY175353A (zh) |
SA (1) | SA516370630B1 (zh) |
SG (1) | SG11201601079QA (zh) |
TW (1) | TWI633677B (zh) |
WO (1) | WO2015047952A1 (zh) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101620431B1 (ko) * | 2014-01-29 | 2016-05-12 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
US9911874B2 (en) * | 2014-05-30 | 2018-03-06 | Sunpower Corporation | Alignment free solar cell metallization |
CN106687617B (zh) * | 2014-07-15 | 2020-04-07 | 奈特考尔技术公司 | 激光转印ibc太阳能电池 |
US9461192B2 (en) | 2014-12-16 | 2016-10-04 | Sunpower Corporation | Thick damage buffer for foil-based metallization of solar cells |
US9620661B2 (en) | 2014-12-19 | 2017-04-11 | Sunpower Corporation | Laser beam shaping for foil-based metallization of solar cells |
US9997651B2 (en) | 2015-02-19 | 2018-06-12 | Sunpower Corporation | Damage buffer for solar cell metallization |
US20160380120A1 (en) | 2015-06-26 | 2016-12-29 | Akira Terao | Metallization and stringing for back-contact solar cells |
US9722103B2 (en) * | 2015-06-26 | 2017-08-01 | Sunpower Corporation | Thermal compression bonding approaches for foil-based metallization of solar cells |
US9634178B1 (en) * | 2015-12-16 | 2017-04-25 | Sunpower Corporation | Method of using laser welding to ohmic contact of metallic thermal and diffusion barrier layer for foil-based metallization of solar cells |
US9831377B2 (en) | 2016-02-29 | 2017-11-28 | Sunpower Corporation | Die-cutting approaches for foil-based metallization of solar cells |
US11424373B2 (en) | 2016-04-01 | 2022-08-23 | Sunpower Corporation | Thermocompression bonding approaches for foil-based metallization of non-metal surfaces of solar cells |
DE102016107802A1 (de) | 2016-04-27 | 2017-11-02 | Universität Stuttgart | Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium |
US20180006172A1 (en) * | 2016-07-01 | 2018-01-04 | Sunpower Corporation | Metallization structures for solar cells |
US9871150B1 (en) * | 2016-07-01 | 2018-01-16 | Sunpower Corporation | Protective region for metallization of solar cells |
US9882071B2 (en) * | 2016-07-01 | 2018-01-30 | Sunpower Corporation | Laser techniques for foil-based metallization of solar cells |
USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
US10115855B2 (en) * | 2016-09-30 | 2018-10-30 | Sunpower Corporation | Conductive foil based metallization of solar cells |
US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
USD877964S1 (en) | 2017-08-09 | 2020-03-10 | Flex Ltd. | Lighting module |
USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
WO2019195806A2 (en) | 2018-04-06 | 2019-10-10 | Sunpower Corporation | Local patterning and metallization of semiconductor structures using a laser beam |
WO2019195793A1 (en) * | 2018-04-06 | 2019-10-10 | Sunpower Corporation | Laser assisted metallization process for solar cell stringing |
CN112424956A (zh) * | 2018-04-06 | 2021-02-26 | 太阳能公司 | 使用激光束对半导体基板进行局部金属化 |
US11276785B2 (en) | 2018-04-06 | 2022-03-15 | Sunpower Corporation | Laser assisted metallization process for solar cell fabrication |
US11646387B2 (en) * | 2018-04-06 | 2023-05-09 | Maxeon Solar Pte. Ltd. | Laser assisted metallization process for solar cell circuit formation |
CN108873172A (zh) * | 2018-06-29 | 2018-11-23 | 中国科学院上海光学精密机械研究所 | 一种片上电可调高品质薄膜微光学器件的制备方法 |
EP3588584A1 (en) | 2018-06-29 | 2020-01-01 | Total SA | Solar cells and metallization process and device |
WO2020205983A1 (en) * | 2019-04-01 | 2020-10-08 | Stinger Advanced Manufacturing Corporation | Systems and methods for non-continuous deposition of a component |
US11527611B2 (en) | 2020-11-09 | 2022-12-13 | The Aerospace Corporation | Method of forming nanowire connects on (photovoltiac) PV cells |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102132423A (zh) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | 背接触式太阳能电池模块 |
CN102132422A (zh) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | 利用印刷介电阻障的背接触太阳能电池 |
Family Cites Families (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4058418A (en) | 1974-04-01 | 1977-11-15 | Solarex Corporation | Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth |
US3993533A (en) | 1975-04-09 | 1976-11-23 | Carnegie-Mellon University | Method for making semiconductors for solar cells |
US4318938A (en) | 1979-05-29 | 1982-03-09 | The University Of Delaware | Method for the continuous manufacture of thin film solar cells |
DE3036260A1 (de) | 1980-09-26 | 1982-04-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung von elektrischen kontakten an einer silizium-solarzelle |
US4400577A (en) | 1981-07-16 | 1983-08-23 | Spear Reginald G | Thin solar cells |
US4433200A (en) | 1981-10-02 | 1984-02-21 | Atlantic Richfield Company | Roll formed pan solar module |
US4482780A (en) | 1982-11-30 | 1984-11-13 | The United States Of America As Represented By The United States Department Of Energy | Solar cells with low cost substrates and process of making same |
US4461922A (en) | 1983-02-14 | 1984-07-24 | Atlantic Richfield Company | Solar cell module |
US4511600A (en) | 1984-02-10 | 1985-04-16 | Solarex Corporation | Solar cell metal spray process |
US4957601A (en) | 1984-09-04 | 1990-09-18 | Texas Instruments Incorporated | Method of forming an array of apertures in an aluminum foil |
US4691076A (en) | 1984-09-04 | 1987-09-01 | Texas Instruments Incorporated | Solar array with aluminum foil matrix |
US4917752A (en) | 1984-09-04 | 1990-04-17 | Texas Instruments Incorporated | Method of forming contacts on semiconductor members |
US4581103A (en) | 1984-09-04 | 1986-04-08 | Texas Instruments Incorporated | Method of etching semiconductor material |
US4582588A (en) | 1984-09-04 | 1986-04-15 | Texas Instruments Incorporated | Method of anodizing and sealing aluminum |
US4697041A (en) | 1985-02-15 | 1987-09-29 | Teijin Limited | Integrated solar cells |
US4617421A (en) | 1985-04-01 | 1986-10-14 | Sovonics Solar Systems | Photovoltaic cell having increased active area and method for producing same |
US4695674A (en) | 1985-08-30 | 1987-09-22 | The Standard Oil Company | Preformed, thin-film front contact current collector grid for photovoltaic cells |
DE3725269A1 (de) | 1987-07-30 | 1989-02-09 | Messerschmitt Boelkow Blohm | Verfahren zum einkapseln von mikroelektronischen halbleiter- und schichtschaltungen |
US5010040A (en) | 1988-12-30 | 1991-04-23 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US5091319A (en) | 1989-07-31 | 1992-02-25 | Hotchkiss Gregory B | Method of affixing silicon spheres to a foil matrix |
US5011567A (en) | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US5032233A (en) | 1990-09-05 | 1991-07-16 | Micron Technology, Inc. | Method for improving step coverage of a metallization layer on an integrated circuit by use of a high melting point metal as an anti-reflective coating during laser planarization |
US5093279A (en) | 1991-02-01 | 1992-03-03 | International Business Machines Corporation | Laser ablation damascene process |
AU651486B2 (en) | 1991-08-30 | 1994-07-21 | Canon Kabushiki Kaisha | Photoelectric conversion element and fabrication method thereof |
US5472772A (en) | 1994-04-18 | 1995-12-05 | General Electric Company | Method for welding stacker laminations and article therefrom |
US6141497A (en) | 1995-06-09 | 2000-10-31 | Marotta Scientific Controls, Inc. | Multilayer micro-gas rheostat with electrical-heater control of gas flow |
US6387803B2 (en) | 1997-01-29 | 2002-05-14 | Ultratech Stepper, Inc. | Method for forming a silicide region on a silicon body |
WO1998037740A1 (en) | 1997-02-21 | 1998-08-27 | Koninklijke Philips Electronics N.V. | A method of selectively metallizing a substrate using a hot foil embossing technique |
US5951786A (en) | 1997-12-19 | 1999-09-14 | Sandia Corporation | Laminated photovoltaic modules using back-contact solar cells |
JPH11243224A (ja) | 1997-12-26 | 1999-09-07 | Canon Inc | 光起電力素子モジュール及びその製造方法並びに非接触処理方法 |
EP1051885A1 (en) | 1998-02-06 | 2000-11-15 | FLEXcon Company, Inc. | Thin film transferable electric components |
US6159832A (en) | 1998-03-18 | 2000-12-12 | Mayer; Frederick J. | Precision laser metallization |
US6175075B1 (en) | 1998-04-21 | 2001-01-16 | Canon Kabushiki Kaisha | Solar cell module excelling in reliability |
DE60034840T3 (de) | 1999-03-23 | 2011-02-24 | Kaneka Corp., Osaka-shi | Photovoltaisches Modul |
JP2001007362A (ja) | 1999-06-17 | 2001-01-12 | Canon Inc | 半導体基材および太陽電池の製造方法 |
US6825550B2 (en) | 1999-09-02 | 2004-11-30 | Micron Technology, Inc. | Board-on-chip packages with conductive foil on the chip surface |
AU2001282581A1 (en) | 2000-09-01 | 2002-03-13 | Showa Denko K K | Apparatus for producing capacitor element member |
AU2002238953B2 (en) | 2001-03-19 | 2007-03-29 | Shin-Etsu Chemical Co., Ltd | Solar cell and its manufacturing method |
WO2003032957A2 (en) | 2001-06-28 | 2003-04-24 | Microchips, Inc. | Methods for hermetically sealing microchip reservoir devices |
JP3809353B2 (ja) | 2001-08-02 | 2006-08-16 | キヤノン株式会社 | Id付き加工物の製造方法 |
US7106939B2 (en) | 2001-09-19 | 2006-09-12 | 3M Innovative Properties Company | Optical and optoelectronic articles |
US6635307B2 (en) | 2001-12-12 | 2003-10-21 | Nanotek Instruments, Inc. | Manufacturing method for thin-film solar cells |
US20060166023A1 (en) | 2002-09-06 | 2006-07-27 | Dai Nippon Printing Co., Ltd. | Backside protective sheet for solar battery module and solar battery module using the same |
JP2004103959A (ja) | 2002-09-11 | 2004-04-02 | Matsushita Electric Ind Co Ltd | 太陽電池およびその製造方法 |
DE10245928B4 (de) | 2002-09-30 | 2006-03-23 | Infineon Technologies Ag | Verfahren zur strukturierten, selektiven Matallisierung einer Oberfläche eines Substrats |
US8222072B2 (en) * | 2002-12-20 | 2012-07-17 | The Trustees Of Princeton University | Methods of fabricating devices by low pressure cold welding |
US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
EP1634673A4 (en) | 2003-04-25 | 2009-04-08 | Nitto Denko Corp | METHOD FOR PRODUCING A LASER-TREATED PRODUCT AND AN ADHESIVE SHEET FOR A LASER TREATMENT USED FOR THIS PRODUCT |
US7494896B2 (en) | 2003-06-12 | 2009-02-24 | International Business Machines Corporation | Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer |
DE10349749B3 (de) | 2003-10-23 | 2005-05-25 | Infineon Technologies Ag | Anti-Fuse-Verbindung für integrierte Schaltungen sowie Verfahren zur Herstellung von Anti-Fuse-Verbindungen |
JP4059842B2 (ja) * | 2003-12-05 | 2008-03-12 | シャープ株式会社 | 太陽電池セルおよび太陽電池モジュール |
KR100610462B1 (ko) | 2004-02-20 | 2006-08-08 | 엔이씨 도낀 가부시끼가이샤 | 고체 전해 커패시터, 전송선로장치, 그 제조방법 및 그것을이용하는 복합 전자부품 |
KR100594277B1 (ko) * | 2004-05-25 | 2006-06-30 | 삼성전자주식회사 | 포토 다이오드 및 그 제조방법 |
JP2006040938A (ja) | 2004-07-22 | 2006-02-09 | Nec Tokin Corp | 固体電解コンデンサ、それを用いた積層コンデンサおよびその製造方法 |
US20080223429A1 (en) | 2004-08-09 | 2008-09-18 | The Australian National University | Solar Cell (Sliver) Sub-Module Formation |
DE102004050269A1 (de) * | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
US7358151B2 (en) | 2004-12-21 | 2008-04-15 | Sony Corporation | Microelectromechanical system microphone fabrication including signal processing circuitry on common substrate |
US7554055B2 (en) | 2005-05-03 | 2009-06-30 | Hitachi Global Storage Technologies Netherlands B.V. | Method for making ohmic contact to silicon structures with low thermal loads |
JP2006324555A (ja) | 2005-05-20 | 2006-11-30 | Nec Tokin Corp | 積層型コンデンサ及びその製造方法 |
DE102005041099A1 (de) | 2005-08-30 | 2007-03-29 | Osram Opto Semiconductors Gmbh | LED-Chip mit Glasbeschichtung und planarer Aufbau- und Verbindungstechnik |
US20070295399A1 (en) * | 2005-12-16 | 2007-12-27 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
JP4842118B2 (ja) | 2006-01-24 | 2011-12-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7795600B2 (en) | 2006-03-24 | 2010-09-14 | Goldeneye, Inc. | Wavelength conversion chip for use with light emitting diodes and method for making same |
DE102006040352B3 (de) | 2006-08-29 | 2007-10-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Aufbringen von elektrischen Kontakten auf halbleitende Substrate, halbleitendes Substrat und Verwendung des Verfahrens |
DE102006044936B4 (de) | 2006-09-22 | 2008-08-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Metallisierung von Solarzellen und dessen Verwendung |
US20080128019A1 (en) | 2006-12-01 | 2008-06-05 | Applied Materials, Inc. | Method of metallizing a solar cell substrate |
WO2008069456A1 (en) | 2006-12-05 | 2008-06-12 | Electronics And Telecommunications Research Institute | Planar lightwave circuit(plc) device, wavelength tunable light source comprising the same device and wavelength division multiplexing-passive optical network(wdm-pon) using the same light source |
EP2100336A4 (en) | 2006-12-22 | 2013-04-10 | Applied Materials Inc | INTERCONNECTION TECHNOLOGIES FOR REAR CONTACT SOLAR CELLS AND MODULES |
US7755292B1 (en) | 2007-01-22 | 2010-07-13 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Ultraminiature broadband light source and method of manufacturing same |
US8066840B2 (en) * | 2007-01-22 | 2011-11-29 | Solopower, Inc. | Finger pattern formation for thin film solar cells |
US7804022B2 (en) | 2007-03-16 | 2010-09-28 | Sunpower Corporation | Solar cell contact fingers and solder pad arrangement for enhanced efficiency |
CN101689580B (zh) | 2007-03-16 | 2012-09-05 | Bp北美公司 | 太阳能电池 |
US8471141B2 (en) * | 2007-05-07 | 2013-06-25 | Nanosolar, Inc | Structures for low cost, reliable solar roofing |
US8866150B2 (en) | 2007-05-31 | 2014-10-21 | Cree, Inc. | Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts |
TWI450401B (zh) | 2007-08-28 | 2014-08-21 | Mosel Vitelic Inc | 太陽能電池及其製造方法 |
JP5252472B2 (ja) | 2007-09-28 | 2013-07-31 | シャープ株式会社 | 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール |
US20120125256A1 (en) | 2007-10-06 | 2012-05-24 | Solexel, Inc. | Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template |
JP2009130116A (ja) | 2007-11-22 | 2009-06-11 | Sharp Corp | 素子間配線部材、光電変換素子およびこれらを用いた光電変換素子接続体ならびに光電変換モジュール |
EP2239788A4 (en) * | 2008-01-30 | 2017-07-12 | Kyocera Corporation | Solar battery element and solar battery element manufacturing method |
JP4870100B2 (ja) | 2008-01-30 | 2012-02-08 | 日清紡ホールディングス株式会社 | テープ状体の配設装置 |
US8481845B2 (en) | 2008-02-05 | 2013-07-09 | Gtat Corporation | Method to form a photovoltaic cell comprising a thin lamina |
DE102008013446A1 (de) * | 2008-02-15 | 2009-08-27 | Ersol Solar Energy Ag | Verfahren zur Herstellung monokristalliner n-Silizium-Solarzellen sowie Solarzelle, hergestellt nach einem derartigen Verfahren |
US20110192445A1 (en) | 2008-03-13 | 2011-08-11 | Florian Solzbacher | High precision, high speed solar cell arrangement to a concentrator lens array and methods of making the same |
US8309388B2 (en) | 2008-04-25 | 2012-11-13 | Texas Instruments Incorporated | MEMS package having formed metal lid |
DE102008021167B3 (de) | 2008-04-28 | 2010-01-21 | Siemens Aktiengesellschaft | Verfahren zur Erzeugung einer hermetisch dichten, elektrischen Durchführung mittels exothermer Nanofolie und damit hergestellte Vorrichtung |
US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
JP2010028017A (ja) | 2008-07-24 | 2010-02-04 | Fuji Electric Device Technology Co Ltd | 薄型インダクタおよびその製造方法と、この薄型インダクタを用いた超小型電力変換装置 |
DE102008062591A1 (de) | 2008-08-08 | 2010-03-04 | Deutsche Cell Gmbh | Halbleiter-Bauelement |
KR101639786B1 (ko) | 2009-01-14 | 2016-07-15 | 코닌클리케 필립스 엔.브이. | 기판 상에 적어도 하나의 전기 전도성 막을 퇴적하는 방법 |
US8207443B2 (en) | 2009-01-27 | 2012-06-26 | Applied Materials, Inc. | Point contacts for polysilicon emitter solar cell |
EP2412030A2 (en) | 2009-03-26 | 2012-02-01 | BP Corporation North America Inc. | Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions |
US8021919B2 (en) | 2009-03-31 | 2011-09-20 | Infineon Technologies Ag | Method of manufacturing a semiconductor device |
JP2011054831A (ja) | 2009-09-03 | 2011-03-17 | Sharp Corp | バックコンタクト型太陽電池セル、太陽電池ストリングおよび太陽電池モジュール |
KR20110047861A (ko) * | 2009-10-30 | 2011-05-09 | 삼성전자주식회사 | 태양 전지 및 이의 제조 방법 |
FR2957479B1 (fr) | 2010-03-12 | 2012-04-27 | Commissariat Energie Atomique | Procede de traitement d'un contact metallique realise sur un substrat |
MY158500A (en) | 2010-08-05 | 2016-10-14 | Solexel Inc | Backplane reinforcement and interconnects for solar cells |
KR101172195B1 (ko) | 2010-09-16 | 2012-08-07 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
US8975510B2 (en) | 2011-03-25 | 2015-03-10 | Cellink Corporation | Foil-based interconnect for rear-contact solar cells |
US20130137244A1 (en) | 2011-05-26 | 2013-05-30 | Solexel, Inc. | Method and apparatus for reconditioning a carrier wafer for reuse |
DE102011104159A1 (de) | 2011-06-14 | 2012-12-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zum elektrischen verbinden mehrerer solarzellen und photovoltaikmodul |
US20130228221A1 (en) | 2011-08-05 | 2013-09-05 | Solexel, Inc. | Manufacturing methods and structures for large-area thin-film solar cells and other semiconductor devices |
US8563364B2 (en) | 2011-09-29 | 2013-10-22 | Infineon Technologies Ag | Method for producing a power semiconductor arrangement |
US20130160825A1 (en) | 2011-12-22 | 2013-06-27 | E I Du Pont De Nemours And Company | Back contact photovoltaic module with glass back-sheet |
WO2013106225A1 (en) | 2012-01-12 | 2013-07-18 | Applied Materials, Inc. | Methods of manufacturing solar cell devices |
US8513045B1 (en) * | 2012-01-31 | 2013-08-20 | Sunpower Corporation | Laser system with multiple laser pulses for fabrication of solar cells |
CN104170095B (zh) * | 2012-03-14 | 2016-10-19 | Imec非营利协会 | 用于制造具有镀敷触点的光伏电池的方法 |
US8859322B2 (en) | 2012-03-19 | 2014-10-14 | Rec Solar Pte. Ltd. | Cell and module processing of semiconductor wafers for back-contacted solar photovoltaic module |
US9040409B2 (en) | 2013-03-15 | 2015-05-26 | Applied Materials, Inc. | Methods of forming solar cells and solar cell modules |
-
2013
- 2013-09-27 US US14/040,047 patent/US9437756B2/en active Active
-
2014
- 2014-09-22 EP EP14847743.3A patent/EP3050122B1/en active Active
- 2014-09-22 CN CN201480046849.0A patent/CN105474412B/zh active Active
- 2014-09-22 BR BR112016006585-9A patent/BR112016006585B1/pt active IP Right Grant
- 2014-09-22 MY MYPI2016000345A patent/MY175353A/en unknown
- 2014-09-22 MX MX2016003561A patent/MX356833B/es active IP Right Grant
- 2014-09-22 JP JP2016545766A patent/JP6526020B2/ja active Active
- 2014-09-22 WO PCT/US2014/056794 patent/WO2015047952A1/en active Application Filing
- 2014-09-22 SG SG11201601079QA patent/SG11201601079QA/en unknown
- 2014-09-22 AU AU2014327036A patent/AU2014327036B2/en active Active
- 2014-09-22 CN CN201711214605.0A patent/CN108039380B/zh active Active
- 2014-09-22 KR KR1020167010446A patent/KR102313263B1/ko active IP Right Grant
- 2014-09-23 TW TW103132752A patent/TWI633677B/zh active
-
2016
- 2016-02-27 SA SA516370630A patent/SA516370630B1/ar unknown
- 2016-03-24 CL CL2016000712A patent/CL2016000712A1/es unknown
- 2016-08-05 US US15/230,163 patent/US9865753B2/en active Active
-
2017
- 2017-12-05 US US15/832,447 patent/US10930804B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102132423A (zh) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | 背接触式太阳能电池模块 |
CN102132422A (zh) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | 利用印刷介电阻障的背接触太阳能电池 |
Also Published As
Publication number | Publication date |
---|---|
MX2016003561A (es) | 2016-06-02 |
WO2015047952A1 (en) | 2015-04-02 |
CN105474412A (zh) | 2016-04-06 |
EP3050122B1 (en) | 2020-06-17 |
AU2014327036B2 (en) | 2018-07-05 |
EP3050122A4 (en) | 2016-09-21 |
CL2016000712A1 (es) | 2016-12-16 |
TWI633677B (zh) | 2018-08-21 |
MX356833B (es) | 2018-06-15 |
US9865753B2 (en) | 2018-01-09 |
KR102313263B1 (ko) | 2021-10-14 |
BR112016006585A2 (pt) | 2017-08-01 |
US10930804B2 (en) | 2021-02-23 |
EP3050122A1 (en) | 2016-08-03 |
US20150090329A1 (en) | 2015-04-02 |
US20180097129A1 (en) | 2018-04-05 |
SA516370630B1 (ar) | 2019-04-11 |
TW201521220A (zh) | 2015-06-01 |
CN105474412B (zh) | 2018-01-02 |
SG11201601079QA (en) | 2016-03-30 |
BR112016006585B1 (pt) | 2021-08-03 |
AU2014327036A1 (en) | 2015-12-17 |
US20160343888A1 (en) | 2016-11-24 |
MY175353A (en) | 2020-06-22 |
CN108039380A (zh) | 2018-05-15 |
JP6526020B2 (ja) | 2019-06-05 |
US9437756B2 (en) | 2016-09-06 |
KR20160061368A (ko) | 2016-05-31 |
JP2016536808A (ja) | 2016-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108039380B (zh) | 使用金属箔将太阳能电池金属化 | |
US11784264B2 (en) | Single-step metal bond and contact formation for solar cells | |
KR102407562B1 (ko) | 광기전 전지 및 라미네이트 금속화 | |
JP5025184B2 (ja) | 太陽電池素子及びこれを用いた太陽電池モジュール、並びに、これらの製造方法 | |
KR20140027188A (ko) | 박형 실리콘 태양 전지용 활성 후면판 | |
CN112136218A (zh) | 用于太阳能电池电路形成的激光辅助金属化工艺 | |
CN107466427B (zh) | 用于太阳能电池金属化的损伤缓冲结构 | |
US9171989B2 (en) | Metal bond and contact formation for solar cells | |
US20190312163A1 (en) | Laser assisted metallization process for solar cell stringing | |
CN112349794B (zh) | 太阳能电池的金属结合部和触点的单步形成 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220901 Address after: Singapore, Singapore City Patentee after: Maikesheng solar energy Co.,Ltd. Address before: California, USA Patentee before: SUNPOWER Corp. |