MX356833B - Metalizacion de celdas solares con hojas metalicas. - Google Patents

Metalizacion de celdas solares con hojas metalicas.

Info

Publication number
MX356833B
MX356833B MX2016003561A MX2016003561A MX356833B MX 356833 B MX356833 B MX 356833B MX 2016003561 A MX2016003561 A MX 2016003561A MX 2016003561 A MX2016003561 A MX 2016003561A MX 356833 B MX356833 B MX 356833B
Authority
MX
Mexico
Prior art keywords
metal foil
metal
dielectric spacer
type
metallization
Prior art date
Application number
MX2016003561A
Other languages
English (en)
Other versions
MX2016003561A (es
Inventor
Pass Thomas
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of MX2016003561A publication Critical patent/MX2016003561A/es
Publication of MX356833B publication Critical patent/MX356833B/es

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02366Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

Una estructura de la celda solar incluye regiones dopadas tipo P y tipo N. Se forma un separador dieléctrico sobre una superficie de la estructura de la celda solar (201). Se forma una capa metálica sobre el separador dieléctrico y sobre la superficie de la estructura de la celda solar que se expone mediante el separador dieléctrico (202). Se coloca una hoja metálica sobre la capa metálica (203). Se usa un haz láser para soldar la hoja metálica a la capa metálica (204). Se usa, además, un haz láser para modelar la hoja metálica (204). El haz láser corta las porciones de la hoja metálica y la capa metálica que están sobre el separador dieléctrico. La ablación láser de la hoja metálica corta la hoja metálica en rejillas metálicas separadas tipo P y tipo N.
MX2016003561A 2013-09-27 2014-09-22 Metalizacion de celdas solares con hojas metalicas. MX356833B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/040,047 US9437756B2 (en) 2013-09-27 2013-09-27 Metallization of solar cells using metal foils
PCT/US2014/056794 WO2015047952A1 (en) 2013-09-27 2014-09-22 Metallization of solar cells using metal foils

Publications (2)

Publication Number Publication Date
MX2016003561A MX2016003561A (es) 2016-06-02
MX356833B true MX356833B (es) 2018-06-15

Family

ID=52738910

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2016003561A MX356833B (es) 2013-09-27 2014-09-22 Metalizacion de celdas solares con hojas metalicas.

Country Status (14)

Country Link
US (3) US9437756B2 (es)
EP (1) EP3050122B1 (es)
JP (1) JP6526020B2 (es)
KR (1) KR102313263B1 (es)
CN (2) CN108039380B (es)
AU (1) AU2014327036B2 (es)
BR (1) BR112016006585B1 (es)
CL (1) CL2016000712A1 (es)
MX (1) MX356833B (es)
MY (1) MY175353A (es)
SA (1) SA516370630B1 (es)
SG (1) SG11201601079QA (es)
TW (1) TWI633677B (es)
WO (1) WO2015047952A1 (es)

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CN108039380B (zh) 2020-07-10
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US9865753B2 (en) 2018-01-09
CN105474412B (zh) 2018-01-02
MY175353A (en) 2020-06-22
US20150090329A1 (en) 2015-04-02
BR112016006585B1 (pt) 2021-08-03
TW201521220A (zh) 2015-06-01
US20180097129A1 (en) 2018-04-05
SA516370630B1 (ar) 2019-04-11
BR112016006585A2 (pt) 2017-08-01
EP3050122A1 (en) 2016-08-03
JP6526020B2 (ja) 2019-06-05
CN108039380A (zh) 2018-05-15
AU2014327036B2 (en) 2018-07-05
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AU2014327036A1 (en) 2015-12-17
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US10930804B2 (en) 2021-02-23
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EP3050122A4 (en) 2016-09-21
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US20160343888A1 (en) 2016-11-24
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SG11201601079QA (en) 2016-03-30
MX2016003561A (es) 2016-06-02

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