RU2611209C2 - Устройство фотоэлектрического преобразования и система формирования изображений - Google Patents

Устройство фотоэлектрического преобразования и система формирования изображений Download PDF

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RU2611209C2
RU2611209C2 RU2015127490A RU2015127490A RU2611209C2 RU 2611209 C2 RU2611209 C2 RU 2611209C2 RU 2015127490 A RU2015127490 A RU 2015127490A RU 2015127490 A RU2015127490 A RU 2015127490A RU 2611209 C2 RU2611209 C2 RU 2611209C2
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Prior art keywords
photoelectric conversion
voltage
electrode
reset
signal
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RU2015127490A
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English (en)
Russian (ru)
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RU2015127490A (ru
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Казуаки ТАСИРО
Нориюки КАИФУ
Хидеказу ТАКАХАСИ
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Кэнон Кабусики Кайся
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
RU2015127490A 2014-07-11 2015-07-08 Устройство фотоэлектрического преобразования и система формирования изображений RU2611209C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-143672 2014-07-11
JP2014143672A JP6395482B2 (ja) 2014-07-11 2014-07-11 光電変換装置、および、撮像システム

Publications (2)

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RU2015127490A RU2015127490A (ru) 2017-01-13
RU2611209C2 true RU2611209C2 (ru) 2017-02-21

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US (2) US9571768B2 (cg-RX-API-DMAC7.html)
EP (1) EP2966857B1 (cg-RX-API-DMAC7.html)
JP (1) JP6395482B2 (cg-RX-API-DMAC7.html)
CN (1) CN105261624B (cg-RX-API-DMAC7.html)
BR (1) BR102015015323A2 (cg-RX-API-DMAC7.html)
RU (1) RU2611209C2 (cg-RX-API-DMAC7.html)

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JP6425448B2 (ja) * 2014-07-31 2018-11-21 キヤノン株式会社 光電変換装置、および、撮像システム
CN111968998B (zh) 2014-12-26 2024-12-13 松下知识产权经营株式会社 摄像装置
EP3386189B1 (en) * 2015-12-03 2021-03-24 Panasonic Intellectual Property Management Co., Ltd. Image-capture device
JP6702711B2 (ja) * 2015-12-17 2020-06-03 キヤノン株式会社 光電変換装置、および、撮像システム
JP7000020B2 (ja) * 2016-11-30 2022-01-19 キヤノン株式会社 光電変換装置、撮像システム
JP2018093297A (ja) * 2016-11-30 2018-06-14 キヤノン株式会社 光電変換装置、撮像システム
JP6808463B2 (ja) * 2016-11-30 2021-01-06 キヤノン株式会社 光電変換装置および光電変換システム
CN106657831B (zh) * 2016-11-30 2019-08-20 上海集成电路研发中心有限公司 像素结构、传感器及信号采集方法
WO2018146146A1 (en) * 2017-02-08 2018-08-16 Trinamix Gmbh Detector for an optical detection of at least one object
CN106937062B (zh) * 2017-03-07 2019-08-20 上海集成电路研发中心有限公司 图像传感器及图像传感器的像素信号采集方法
CN108807434B (zh) 2017-04-26 2023-12-05 松下知识产权经营株式会社 摄像装置及照相机系统
JP6474014B1 (ja) 2017-07-05 2019-02-27 パナソニックＩｐマネジメント株式会社 撮像装置
CN109920808B (zh) * 2017-12-13 2024-05-14 松下知识产权经营株式会社 摄像装置
WO2020008801A1 (ja) 2018-07-03 2020-01-09 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び固体撮像装置
TWI840383B (zh) 2018-07-26 2024-05-01 日商索尼半導體解決方案公司 固體攝像裝置
KR102551483B1 (ko) 2018-08-14 2023-07-04 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP2021057885A (ja) 2019-09-26 2021-04-08 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
WO2023100632A1 (ja) * 2021-12-01 2023-06-08 パナソニックＩｐマネジメント株式会社 撮像素子の制御方法およびカメラシステム
US11849237B1 (en) * 2022-07-26 2023-12-19 Pixart Imaging Inc. Pixel circuit adopting optically sensitive material with suppressed dark current

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Publication number Priority date Publication date Assignee Title
EP1267411A2 (en) * 2001-06-07 2002-12-18 Canon Kabushiki Kaisha Radiographic image pickup apparatus and method of driving the apparatus
RU2426195C1 (ru) * 2007-10-03 2011-08-10 Кэнон Кабусики Кайся Устройство фотоэлектрического преобразования и система формирования изображения
US20100187501A1 (en) * 2009-01-29 2010-07-29 Atsushi Toda Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus
JP2011228621A (ja) * 2010-03-31 2011-11-10 Fujifilm Corp 固体撮像素子及び撮像装置
WO2012004923A1 (ja) * 2010-07-09 2012-01-12 パナソニック株式会社 固体撮像装置および固体撮像装置の駆動方法
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Publication number Publication date
US20170111601A1 (en) 2017-04-20
CN105261624B (zh) 2018-05-29
US20160014364A1 (en) 2016-01-14
EP2966857B1 (en) 2018-04-25
JP6395482B2 (ja) 2018-09-26
CN105261624A (zh) 2016-01-20
RU2015127490A (ru) 2017-01-13
US9826181B2 (en) 2017-11-21
BR102015015323A2 (pt) 2016-05-31
US9571768B2 (en) 2017-02-14
EP2966857A1 (en) 2016-01-13
JP2016021611A (ja) 2016-02-04

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