BR102015015323A2 - dispositivo de conversão fotoelétrica e sistema de formação de imagem - Google Patents

dispositivo de conversão fotoelétrica e sistema de formação de imagem Download PDF

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Publication number
BR102015015323A2
BR102015015323A2 BR102015015323A BR102015015323A BR102015015323A2 BR 102015015323 A2 BR102015015323 A2 BR 102015015323A2 BR 102015015323 A BR102015015323 A BR 102015015323A BR 102015015323 A BR102015015323 A BR 102015015323A BR 102015015323 A2 BR102015015323 A2 BR 102015015323A2
Authority
BR
Brazil
Prior art keywords
photoelectric conversion
voltage
electrode
signal
reset
Prior art date
Application number
BR102015015323A
Other languages
English (en)
Portuguese (pt)
Inventor
Hidekazu Takahashi
Kazuaki Tashiro
Noriyuki Kaifu
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of BR102015015323A2 publication Critical patent/BR102015015323A2/pt

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
BR102015015323A 2014-07-11 2015-06-24 dispositivo de conversão fotoelétrica e sistema de formação de imagem BR102015015323A2 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014143672A JP6395482B2 (ja) 2014-07-11 2014-07-11 光電変換装置、および、撮像システム

Publications (1)

Publication Number Publication Date
BR102015015323A2 true BR102015015323A2 (pt) 2016-05-31

Family

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Family Applications (1)

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BR102015015323A BR102015015323A2 (pt) 2014-07-11 2015-06-24 dispositivo de conversão fotoelétrica e sistema de formação de imagem

Country Status (6)

Country Link
US (2) US9571768B2 (cg-RX-API-DMAC7.html)
EP (1) EP2966857B1 (cg-RX-API-DMAC7.html)
JP (1) JP6395482B2 (cg-RX-API-DMAC7.html)
CN (1) CN105261624B (cg-RX-API-DMAC7.html)
BR (1) BR102015015323A2 (cg-RX-API-DMAC7.html)
RU (1) RU2611209C2 (cg-RX-API-DMAC7.html)

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CN111968998B (zh) 2014-12-26 2024-12-13 松下知识产权经营株式会社 摄像装置
EP3386189B1 (en) * 2015-12-03 2021-03-24 Panasonic Intellectual Property Management Co., Ltd. Image-capture device
JP6702711B2 (ja) * 2015-12-17 2020-06-03 キヤノン株式会社 光電変換装置、および、撮像システム
JP7000020B2 (ja) * 2016-11-30 2022-01-19 キヤノン株式会社 光電変換装置、撮像システム
JP2018093297A (ja) * 2016-11-30 2018-06-14 キヤノン株式会社 光電変換装置、撮像システム
JP6808463B2 (ja) * 2016-11-30 2021-01-06 キヤノン株式会社 光電変換装置および光電変換システム
CN106657831B (zh) * 2016-11-30 2019-08-20 上海集成电路研发中心有限公司 像素结构、传感器及信号采集方法
WO2018146146A1 (en) * 2017-02-08 2018-08-16 Trinamix Gmbh Detector for an optical detection of at least one object
CN106937062B (zh) * 2017-03-07 2019-08-20 上海集成电路研发中心有限公司 图像传感器及图像传感器的像素信号采集方法
CN108807434B (zh) 2017-04-26 2023-12-05 松下知识产权经营株式会社 摄像装置及照相机系统
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JP2021057885A (ja) 2019-09-26 2021-04-08 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
WO2023100632A1 (ja) * 2021-12-01 2023-06-08 パナソニックＩｐマネジメント株式会社 撮像素子の制御方法およびカメラシステム
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JP6425448B2 (ja) 2014-07-31 2018-11-21 キヤノン株式会社 光電変換装置、および、撮像システム

Also Published As

Publication number Publication date
US20170111601A1 (en) 2017-04-20
CN105261624B (zh) 2018-05-29
US20160014364A1 (en) 2016-01-14
EP2966857B1 (en) 2018-04-25
RU2611209C2 (ru) 2017-02-21
JP6395482B2 (ja) 2018-09-26
CN105261624A (zh) 2016-01-20
RU2015127490A (ru) 2017-01-13
US9826181B2 (en) 2017-11-21
US9571768B2 (en) 2017-02-14
EP2966857A1 (en) 2016-01-13
JP2016021611A (ja) 2016-02-04

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Legal Events

Date Code Title Description
B03A Publication of a patent application or of a certificate of addition of invention [chapter 3.1 patent gazette]
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B11B Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements