JP2011228621A - 固体撮像素子及び撮像装置 - Google Patents
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- 238000003860 storage Methods 0.000 claims description 8
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- 229910052738 indium Inorganic materials 0.000 description 1
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- H01L27/144—Devices controlled by radiation
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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Abstract
【解決手段】光電変換素子Pを含む有効画素1aと、光電変換素子Pの暗時出力を取得するためのOB画素2aとを有する固体撮像素子100であって、光電変換素子Pは、半導体基板10上方に設けられた一対の電極14,16と、電極14,16の間に設けられた光電変換層15とを含んで構成され、有効画素1aは、半導体基板10に形成され、光電変換素子Pで発生した電荷に応じた信号を読み出す信号読み出し回路11を含み、OB画素2aは、信号読み出し回路11と同じ構成の信号読み出し回路11’を含む。信号読み出し回路11と信号読み出し回路11’はそれぞれ遮光されており、信号読み出し回路11の入力ノードは、光電変換素子Pの画素電極14と電気的に接続され、信号読み出し回路11’の入力ノードは、キャパシタ19に接続されている。
【選択図】図2
Description
図6は、図1に示した固体撮像素子の第一の変形例を示す図であり、図3に対応する図である。図6に示した固体撮像素子は、OB画素領域2にある画素電極21をOB画素2a毎に区画せずに、全てのOB画素に渡って一体的に形成した点以外は、図3に示した構成と同じである。
図7は、図1に示した固体撮像素子における信号読み出し回路11の変形例を示す図である。
2 OB画素領域
1a 有効画素
2a OB画素
10 半導体基板
11,11’ 信号読み出し回路
13 遮光層
14 画素電極
15 光電変換層
16 対向電極
19 キャパシタ
20 絶縁層
21 ダミーの画素電極
P 光電変換素子
P’ ダミーの光電変換素子
Claims (13)
- 光電変換素子を含む有効画素と、前記有効画素が形成される領域の外側に設けられ、前記光電変換素子の暗時出力を取得するためのOB画素とを有する固体撮像素子であって、
前記光電変換素子は、半導体基板上方に設けられた一対の電極と、前記一対の電極の間に設けられた受光層とを含んで構成され、
前記受光層は全ての前記有効画素で共通化されており、
前記有効画素は、前記半導体基板に形成され、前記光電変換素子で発生した電荷に応じた信号を読み出す、MOSトランジスタを含んで構成された第一の信号読み出し回路を含み、
前記OB画素は、前記第一の信号読み出し回路と同じ構成の前記半導体基板に形成された第二の信号読み出し回路、及び、前記第一の信号読み出し回路の入力ノードに接続されたキャパシタを含み、
前記キャパシタは、前記光電変換素子よりも前記半導体基板側に設けられ、
前記第一の信号読み出し回路と前記第二の信号読み出し回路と前記キャパシタは、前記光電変換素子よりも前記半導体基板側に形成された遮光層で遮光されており、
前記第一の信号読み出し回路の入力ノードは、前記光電変換素子の前記一対の電極の一方と電気的に接続されており、
前記第二の信号読み出し回路の入力ノードは、前記キャパシタに接続されており、
前記キャパシタの容量値は、前記第一の信号読み出し回路の入力ノードにおける静電容量値と、前記第二の信号読み出し回路の入力ノードにおける静電容量値とが略同等になるような値になっている固体撮像素子。 - 請求項1記載の固体撮像素子であって、
前記受光層が、有機材料を含む光電変換層を有する固体撮像素子。 - 請求項2記載の固体撮像素子であって、
前記受光層が、有機材料を含む電荷ブロッキング層を有する固体撮像素子。 - 請求項1〜3のいずれか1項記載の固体撮像素子であって、
前記キャパシタが、前記半導体基板上方に形成されている固体撮像素子。 - 請求項1〜4のいずれか1項記載の固体撮像素子であって、
前記キャパシタの電極が、金属又はポリシリコンにより構成される固体撮像素子。 - 請求項1〜5のいずれか1項記載の固体撮像素子であって、
前記OB画素が、前記半導体基板上方に設けられた、前記第二の信号読み出し回路と電気的に非接続のダミーの光電変換素子を有し、
前記ダミーの光電変換素子が、少なくとも、前記光電変換素子の前記一対の電極の他方と同じ層に形成された電極と前記受光層とを含む固体撮像素子。 - 請求項6記載の固体撮像素子であって、
前記ダミーの光電変換素子の前記他方の電極と同じ層に形成された電極の上方には遮光膜が形成されていない固体撮像素子。 - 請求項6又は7記載の固体撮像素子であって、
前記ダミーの光電変換素子の前記受光層で発生する電荷を排出する電荷排出部を備える固体撮像素子。 - 請求項8記載の固体撮像素子であって、
前記ダミーの光電変換素子が、前記他方の電極と同じ層に形成された前記電極、前記受光層、及び前記一方の電極と同じ層に形成されたダミー電極を含み、
前記遮光層には電源端子が接続され、
前記ダミー電極は前記遮光層に電気的に接続され、
前記電荷排出部は、前記ダミー電極と前記遮光層と前記電源端子によって構成されている固体撮像素子。 - 請求項9記載の固体撮像素子であって、
前記OB画素が複数あり、
前記ダミー電極が、全ての前記OB画素に渡って一体的に形成されている固体撮像素子。 - 請求項1〜10のいずれか1項記載の固体撮像素子であって、
前記第一の信号読み出し回路が、前記一方の電極で捕集された電荷を蓄積する前記半導体基板内に形成された電荷蓄積部と、前記電荷蓄積部に蓄積した電荷が転送されるフローティングディフュージョンと、前記フローティングディフュージョンの電位に応じた信号を出力するトランジスタ回路とを含む固体撮像素子。 - 請求項1〜10のいずれか1項記載の固体撮像素子であって、
前記第一の信号読み出し回路が、前記一方の電極に接続されたフローティングディフュージョンと、フローティングディフュージョンの電位に応じた信号を出力するトランジスタ回路とを含む固体撮像素子。 - 請求項1〜12のいずれか1項記載の固体撮像素子を備える撮像装置。
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JP2010244819A JP4779054B1 (ja) | 2010-03-31 | 2010-10-29 | 固体撮像素子及び撮像装置 |
KR1020127025680A KR101588699B1 (ko) | 2010-03-31 | 2011-03-29 | 고체 촬상 소자 및 촬상 장치 |
US13/637,435 US8816265B2 (en) | 2010-03-31 | 2011-03-29 | Solid-state image pickup device and image pickup apparatus |
PCT/JP2011/057900 WO2011125677A1 (ja) | 2010-03-31 | 2011-03-29 | 固体撮像素子及び撮像装置 |
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- 2011-03-29 US US13/637,435 patent/US8816265B2/en active Active
- 2011-03-29 WO PCT/JP2011/057900 patent/WO2011125677A1/ja active Application Filing
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Also Published As
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KR101588699B1 (ko) | 2016-01-27 |
US20130015328A1 (en) | 2013-01-17 |
KR20130012952A (ko) | 2013-02-05 |
JP4779054B1 (ja) | 2011-09-21 |
US8816265B2 (en) | 2014-08-26 |
WO2011125677A1 (ja) | 2011-10-13 |
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