RU2435237C1 - Система и способ снижения энергопотребления динамического озу посредством использования указателей действительных данных - Google Patents

Система и способ снижения энергопотребления динамического озу посредством использования указателей действительных данных Download PDF

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RU2435237C1
RU2435237C1 RU2010107059/08A RU2010107059A RU2435237C1 RU 2435237 C1 RU2435237 C1 RU 2435237C1 RU 2010107059/08 A RU2010107059/08 A RU 2010107059/08A RU 2010107059 A RU2010107059 A RU 2010107059A RU 2435237 C1 RU2435237 C1 RU 2435237C1
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Russia
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memory
independently updated
update
pointer
dram
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RU2010107059/08A
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English (en)
Russian (ru)
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RU2010107059A (ru
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Джералд Пол МИЧАЛАК (US)
Джералд Пол МИЧАЛАК
Барри Джо УОЛФОРД (US)
Барри Джо УОЛФОРД
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Квэлкомм Инкорпорейтед
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40622—Partial refresh of memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4065—Low level details of refresh operations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Power Sources (AREA)
  • Memory System (AREA)
RU2010107059/08A 2007-07-26 2008-07-25 Система и способ снижения энергопотребления динамического озу посредством использования указателей действительных данных RU2435237C1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/828,569 2007-07-26
US11/828,569 US7590021B2 (en) 2007-07-26 2007-07-26 System and method to reduce dynamic RAM power consumption via the use of valid data indicators

Publications (2)

Publication Number Publication Date
RU2010107059A RU2010107059A (ru) 2011-09-10
RU2435237C1 true RU2435237C1 (ru) 2011-11-27

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RU2010107059/08A RU2435237C1 (ru) 2007-07-26 2008-07-25 Система и способ снижения энергопотребления динамического озу посредством использования указателей действительных данных

Country Status (12)

Country Link
US (1) US7590021B2 (enExample)
EP (1) EP2020659B1 (enExample)
JP (2) JP2010534897A (enExample)
KR (1) KR101107798B1 (enExample)
CN (1) CN101765887A (enExample)
AT (1) ATE528763T1 (enExample)
BR (1) BRPI0814590A8 (enExample)
CA (1) CA2693811C (enExample)
ES (1) ES2375230T3 (enExample)
MX (1) MX2010000954A (enExample)
RU (1) RU2435237C1 (enExample)
WO (1) WO2009015324A1 (enExample)

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KR102481494B1 (ko) 2011-12-22 2022-12-26 아이씨유 메디칼 인코퍼레이티드 의료용 유체 전달 시스템, 유체 전달 방법, 전자 의료용 유체 전달 시스템, 및 전자 의료용 유체 전달 시스템 이용 방법
EP2620838B1 (en) 2012-01-26 2015-04-22 ST-Ericsson SA Automatic partial array self-refresh
US20160155491A1 (en) * 2014-11-27 2016-06-02 Advanced Micro Devices, Inc. Memory persistence management control
KR102373544B1 (ko) 2015-11-06 2022-03-11 삼성전자주식회사 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법
EP4534065A3 (en) 2015-12-04 2025-06-04 ICU Medical, Inc. Systems methods and components for transferring medical fluids
US9972375B2 (en) * 2016-04-15 2018-05-15 Via Alliance Semiconductor Co., Ltd. Sanitize-aware DRAM controller
USD851745S1 (en) 2016-07-19 2019-06-18 Icu Medical, Inc. Medical fluid transfer system
JP6765941B2 (ja) * 2016-11-22 2020-10-07 理想科学工業株式会社 半導体メモリ管理装置
US10437499B2 (en) * 2017-12-22 2019-10-08 Nanya Technology Corporation Hybrid memory system and method of operating the same
US10762946B2 (en) 2018-12-31 2020-09-01 Micron Technology, Inc. Memory with partial array refresh
US10811076B1 (en) 2019-06-29 2020-10-20 Intel Corporation Battery life based on inhibited memory refreshes
US11721384B2 (en) * 2020-04-17 2023-08-08 Advanced Micro Devices, Inc. Hardware-assisted dynamic random access memory (DRAM) row merging
KR20240059151A (ko) 2022-10-27 2024-05-07 삼성전자주식회사 메모리 장치, 그것을 포함하는 메모리 시스템 및 그것의 동작 방법

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Publication number Publication date
EP2020659A1 (en) 2009-02-04
JP2014197446A (ja) 2014-10-16
KR101107798B1 (ko) 2012-01-25
US20090027989A1 (en) 2009-01-29
JP2010534897A (ja) 2010-11-11
ES2375230T3 (es) 2012-02-27
US7590021B2 (en) 2009-09-15
KR20100047286A (ko) 2010-05-07
BRPI0814590A2 (pt) 2015-01-20
CA2693811A1 (en) 2009-01-29
EP2020659B1 (en) 2011-10-12
MX2010000954A (es) 2010-03-10
ATE528763T1 (de) 2011-10-15
CA2693811C (en) 2013-11-12
RU2010107059A (ru) 2011-09-10
BRPI0814590A8 (pt) 2019-01-02
WO2009015324A1 (en) 2009-01-29
CN101765887A (zh) 2010-06-30

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Effective date: 20180726